JP2019518981A - ポリスルホンアミド再分布組成物及びその使用方法 - Google Patents

ポリスルホンアミド再分布組成物及びその使用方法 Download PDF

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Publication number
JP2019518981A
JP2019518981A JP2018554768A JP2018554768A JP2019518981A JP 2019518981 A JP2019518981 A JP 2019518981A JP 2018554768 A JP2018554768 A JP 2018554768A JP 2018554768 A JP2018554768 A JP 2018554768A JP 2019518981 A JP2019518981 A JP 2019518981A
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group
substituted
composition
silicon
oxide
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Japanese (ja)
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JP2019518981A5 (enExample
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クイ，シンゾウ
ナオ，ホンダ
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Cui quingzhou
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Cui quingzhou
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Publication of JP2019518981A publication Critical patent/JP2019518981A/ja
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
    • C08L81/10—Polysulfonamides; Polysulfonimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G75/00—Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen, or carbon in the main chain of the macromolecule
    • C08G75/30—Polysulfonamides; Polysulfonimides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0025—Crosslinking or vulcanising agents; including accelerators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/164—Coating processes; Apparatus therefor using electric, electrostatic or magnetic means; powder coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0231—Manufacturing methods of the redistribution layers
    • H01L2224/02311—Additive methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2018554768A 2016-05-12 2017-05-10 ポリスルホンアミド再分布組成物及びその使用方法 Pending JP2019518981A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662335115P 2016-05-12 2016-05-12
US62/335,115 2016-05-12
PCT/US2017/031918 WO2017196953A1 (en) 2016-05-12 2017-05-10 Polysulfonamide redistribution compositions and methods of their use

Publications (2)

Publication Number Publication Date
JP2019518981A true JP2019518981A (ja) 2019-07-04
JP2019518981A5 JP2019518981A5 (enExample) 2020-06-18

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JP2018554768A Pending JP2019518981A (ja) 2016-05-12 2017-05-10 ポリスルホンアミド再分布組成物及びその使用方法

Country Status (7)

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US (1) US10509316B2 (enExample)
JP (1) JP2019518981A (enExample)
KR (1) KR102328686B1 (enExample)
CN (1) CN109312158B (enExample)
DE (1) DE112017002428T5 (enExample)
SG (1) SG11201810202UA (enExample)
WO (1) WO2017196953A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10782612B2 (en) * 2015-10-08 2020-09-22 Nippon Kayaku Kabushiki Kaisha Polysulfone amide compound, and resin composition containing same
CN115581120A (zh) * 2020-05-19 2023-01-06 崔国英 聚磺酰胺聚合物、含有聚磺酰胺聚合物的负型光敏性组合物及其应用
CN115551923A (zh) * 2020-05-19 2022-12-30 崔国英 聚磺酰胺聚合物、含有聚磺酰胺聚合物的正型光敏性组合物及其应用
US20220137509A1 (en) * 2020-10-31 2022-05-05 Rohm And Haas Electronic Materials Llc Photoresist compositions and pattern formation methods
CN112920408B (zh) * 2021-02-26 2022-08-02 广东工业大学 一种聚磺酰胺聚合物及其制备方法

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GB1335095A (en) * 1971-01-14 1973-10-24 Kodak Ltd Polycondensation copolymers
JPH023051A (ja) * 1988-01-21 1990-01-08 Eastman Kodak Co 集積回路チップ接合用ビームリードの形成用積層物
JPH0990638A (ja) * 1995-03-07 1997-04-04 At & T Corp エネルギー感受性レジスト材料およびエネルギー感受性レジスト材料を使用したデバイスの製造方法
JP2003241375A (ja) * 2002-02-18 2003-08-27 Toray Ind Inc 感光性耐熱性樹脂前駆体組成物
JP2005106910A (ja) * 2003-09-29 2005-04-21 Fuji Photo Film Co Ltd 平版印刷版原版
JP2007525696A (ja) * 2003-09-16 2007-09-06 インターナショナル・ビジネス・マシーンズ・コーポレーション フルオロスルホンアミド含有ポリマーを有するネガ型レジスト組成物およびパターン形成方法
JP2014137424A (ja) * 2013-01-15 2014-07-28 Sumitomo Bakelite Co Ltd 化学増幅型のネガ型フォトレジスト用樹脂組成物、硬化物および電子装置
WO2017022465A1 (ja) * 2015-07-31 2017-02-09 富士フイルム株式会社 平版印刷版原版及び製版方法
WO2017056595A1 (ja) * 2015-09-28 2017-04-06 富士フイルム株式会社 ネガ型感光性樹脂組成物、ネガ型平版印刷版原版、及び、平版印刷版の作製方法
WO2017061561A1 (ja) * 2015-10-08 2017-04-13 日本化薬株式会社 新規ポリスルホンアミド化合物、及び該化合物を含有する樹脂組成物

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US4968586A (en) * 1988-12-23 1990-11-06 Eastman Kodak Company Photoresist compositions containing cobalt (III) compound and redox transfer ligand
JP2000331713A (ja) * 1999-05-21 2000-11-30 Hitachi Chem Co Ltd 高分子固体電解質の製造法、高分子固体電解質及びこれを用いた電気化学的デバイス
JP5035960B2 (ja) * 2004-12-02 2012-09-26 学校法人日本大学 ポリスルホンアミド誘導体とその使用
JP5061703B2 (ja) * 2007-04-25 2012-10-31 東レ株式会社 感光性樹脂組成物
JP6016918B2 (ja) * 2012-06-28 2016-10-26 富士フイルム株式会社 感光性樹脂組成物、硬化物の製造方法、樹脂パターン製造方法、硬化膜、液晶表示装置、有機ｅｌ表示装置、並びに、タッチパネル表示装置
US9223214B2 (en) * 2012-11-19 2015-12-29 The Texas A&M University System Self-assembled structures, method of manufacture thereof and articles comprising the same
JP2017185462A (ja) * 2016-04-07 2017-10-12 富士フイルム株式会社 ガス分離膜、ガス分離モジュール、ガス分離装置、及びガス分離方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1335095A (en) * 1971-01-14 1973-10-24 Kodak Ltd Polycondensation copolymers
JPH023051A (ja) * 1988-01-21 1990-01-08 Eastman Kodak Co 集積回路チップ接合用ビームリードの形成用積層物
JPH0990638A (ja) * 1995-03-07 1997-04-04 At & T Corp エネルギー感受性レジスト材料およびエネルギー感受性レジスト材料を使用したデバイスの製造方法
JP2003241375A (ja) * 2002-02-18 2003-08-27 Toray Ind Inc 感光性耐熱性樹脂前駆体組成物
JP2007525696A (ja) * 2003-09-16 2007-09-06 インターナショナル・ビジネス・マシーンズ・コーポレーション フルオロスルホンアミド含有ポリマーを有するネガ型レジスト組成物およびパターン形成方法
JP2005106910A (ja) * 2003-09-29 2005-04-21 Fuji Photo Film Co Ltd 平版印刷版原版
JP2014137424A (ja) * 2013-01-15 2014-07-28 Sumitomo Bakelite Co Ltd 化学増幅型のネガ型フォトレジスト用樹脂組成物、硬化物および電子装置
WO2017022465A1 (ja) * 2015-07-31 2017-02-09 富士フイルム株式会社 平版印刷版原版及び製版方法
WO2017056595A1 (ja) * 2015-09-28 2017-04-06 富士フイルム株式会社 ネガ型感光性樹脂組成物、ネガ型平版印刷版原版、及び、平版印刷版の作製方法
WO2017061561A1 (ja) * 2015-10-08 2017-04-13 日本化薬株式会社 新規ポリスルホンアミド化合物、及び該化合物を含有する樹脂組成物

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Publication number Publication date
WO2017196953A8 (en) 2018-12-13
WO2017196953A1 (en) 2017-11-16
CN109312158A (zh) 2019-02-05
US20170329222A1 (en) 2017-11-16
KR20190008877A (ko) 2019-01-25
CN109312158B (zh) 2022-02-11
US10509316B2 (en) 2019-12-17
SG11201810202UA (en) 2018-12-28
KR102328686B1 (ko) 2021-11-19
DE112017002428T5 (de) 2019-01-31

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