JP2019511702A - ３次元検知を備える集積フラックスゲートデバイス - Google Patents

３次元検知を備える集積フラックスゲートデバイス Download PDF

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Publication number
JP2019511702A
JP2019511702A JP2018541125A JP2018541125A JP2019511702A JP 2019511702 A JP2019511702 A JP 2019511702A JP 2018541125 A JP2018541125 A JP 2018541125A JP 2018541125 A JP2018541125 A JP 2018541125A JP 2019511702 A JP2019511702 A JP 2019511702A
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Prior art keywords
magnetic core
integrated
fluxgate
die
package substrate
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Japanese (ja)
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JP2019511702A5 (https=
Inventor
モハン アヌラーグ
モハン アヌラーグ
デヴィッド フレンチ ウィリアム
デヴィッド フレンチ ウィリアム
ウドムパニャヴィット ウボル
ウドムパニャヴィット ウボル
Original Assignee
日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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Application filed by 日本テキサス・インスツルメンツ合同会社, テキサス インスツルメンツ インコーポレイテッド, テキサス インスツルメンツ インコーポレイテッド filed Critical 日本テキサス・インスツルメンツ合同会社
Publication of JP2019511702A publication Critical patent/JP2019511702A/ja
Publication of JP2019511702A5 publication Critical patent/JP2019511702A5/ja
Priority to JP2022041833A priority Critical patent/JP7311943B2/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/04—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/0206—Three-component magnetometers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
JP2018541125A 2016-02-05 2017-02-06 ３次元検知を備える集積フラックスゲートデバイス Pending JP2019511702A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022041833A JP7311943B2 (ja) 2016-02-05 2022-03-16 ３次元検知を備える集積フラックスゲートデバイス

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/016,507 2016-02-05
US15/016,507 US10914796B2 (en) 2016-02-05 2016-02-05 Integrated fluxgate device with three-dimensional sensing
PCT/US2017/016750 WO2017136851A1 (en) 2016-02-05 2017-02-06 Integrated fluxgate device with three-dimensional sensing

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022041833A Division JP7311943B2 (ja) 2016-02-05 2022-03-16 ３次元検知を備える集積フラックスゲートデバイス

Publications (2)

Publication Number Publication Date
JP2019511702A true JP2019511702A (ja) 2019-04-25
JP2019511702A5 JP2019511702A5 (https=) 2020-03-05

Family

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JP2018541125A Pending JP2019511702A (ja) 2016-02-05 2017-02-06 ３次元検知を備える集積フラックスゲートデバイス
JP2022041833A Active JP7311943B2 (ja) 2016-02-05 2022-03-16 ３次元検知を備える集積フラックスゲートデバイス

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JP2022041833A Active JP7311943B2 (ja) 2016-02-05 2022-03-16 ３次元検知を備える集積フラックスゲートデバイス

Country Status (5)

Country Link
US (1) US10914796B2 (https=)
EP (1) EP3411911B1 (https=)
JP (2) JP2019511702A (https=)
CN (1) CN108604633A (https=)
WO (1) WO2017136851A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
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US20240203851A1 (en) * 2022-12-14 2024-06-20 Western Digital Technologies, Inc. Semiconductor Device Package with Coupled Substrates
US20250109973A1 (en) * 2023-09-29 2025-04-03 Texas Instruments Incorporated Magnetic position sensor and calibration thereof

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JPH08264857A (ja) * 1995-01-26 1996-10-11 Matsushita Electric Works Ltd 集積化アイソレータ
JP2004271481A (ja) * 2003-03-12 2004-09-30 Citizen Watch Co Ltd ３軸磁気センサー
JP2009535616A (ja) * 2006-04-28 2009-10-01 マイクロゲート インコーポレイテッド 薄膜型３軸フラックスゲート及びその製造方法
WO2012043738A1 (ja) * 2010-09-30 2012-04-05 株式会社フジクラ 半導体集積回路、磁気検出装置、電子方位計、及び電流計
JP2015053465A (ja) * 2013-08-05 2015-03-19 ローム株式会社 半導体装置
JP2015181155A (ja) * 2014-03-06 2015-10-15 ローム株式会社 半導体装置および半導体装置の製造方法

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WO2003081271A1 (en) 2002-03-27 2003-10-02 Matsushita Electric Industrial Co., Ltd. Magnetic sensing element, magnetic sensor, and its manufacturing method
KR100544475B1 (ko) 2003-01-25 2006-01-24 삼성전자주식회사 반도체기판에 집적된 자계검출소자 및 그 제조방법
FR2860594B1 (fr) * 2003-10-06 2005-12-23 Commissariat Energie Atomique Magnetometre a circuit magnetique ouvert et son procede de realisation.
JP2005114489A (ja) 2003-10-06 2005-04-28 Citizen Electronics Co Ltd 磁気方位検出装置
KR100609803B1 (ko) 2004-10-30 2006-08-09 주식회사 마이크로게이트 박막형 3축 플럭스게이트 및 그 제조방법
JP4804764B2 (ja) 2005-02-01 2011-11-02 シチズン電子株式会社 磁界を３次元で検出する小型磁気センサー素子
US7535221B2 (en) * 2006-03-17 2009-05-19 Citizen Holdings Co., Ltd. Magnetic sensor element and electronic directional measuring device
CN101410723B (zh) * 2006-03-31 2011-09-14 西铁城电子股份有限公司 磁传感器元件和使用该元件的磁传感器
WO2008016198A1 (en) 2006-08-03 2008-02-07 Microgate, Inc. 3 axis thin film fluxgate
EP2116858B1 (en) 2007-02-14 2013-01-02 Alps Electric Co., Ltd. Sensor chip, detecting device, and method for manufacturing detecting device
US7875913B2 (en) 2008-05-30 2011-01-25 Omnivision Technologies, Inc. Transistor with contact over gate active area
TWI438460B (zh) * 2009-05-21 2014-05-21 Fujikura Ltd 磁通閘感測器及使用該感測器之電子羅盤
KR20100132611A (ko) 2009-06-10 2010-12-20 (주)파트론 하우징 구조물에 수용된 전자 나침반
US8686722B2 (en) * 2011-08-26 2014-04-01 National Semiconductor Corporation Semiconductor fluxgate magnetometer
DE102012205268A1 (de) * 2012-03-30 2013-10-02 Robert Bosch Gmbh Verfahren zum Herstellen von zumindest einer Kontaktierungsfläche eines Bauelementes und Sensor zum Aufnehmen einer Richtungskomponente einer gerichteten Messgröße
WO2013154440A1 (en) 2012-04-12 2013-10-17 John Vedamuthu Kennedy A magnetometer
US9176203B2 (en) 2013-02-05 2015-11-03 Texas Instruments Incorporated Apparatus and method for in situ current measurement in a conductor
US9261571B2 (en) 2013-08-15 2016-02-16 Texas Instruments Incorporated Fluxgate magnetic sensor readout apparatus
US9383418B2 (en) * 2014-05-23 2016-07-05 Texas Instruments Incorporated Integrated dual axis fluxgate sensor using double deposition of magnetic material

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264857A (ja) * 1995-01-26 1996-10-11 Matsushita Electric Works Ltd 集積化アイソレータ
JP2004271481A (ja) * 2003-03-12 2004-09-30 Citizen Watch Co Ltd ３軸磁気センサー
JP2009535616A (ja) * 2006-04-28 2009-10-01 マイクロゲート インコーポレイテッド 薄膜型３軸フラックスゲート及びその製造方法
WO2012043738A1 (ja) * 2010-09-30 2012-04-05 株式会社フジクラ 半導体集積回路、磁気検出装置、電子方位計、及び電流計
JP2015053465A (ja) * 2013-08-05 2015-03-19 ローム株式会社 半導体装置
JP2015181155A (ja) * 2014-03-06 2015-10-15 ローム株式会社 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
EP3411911A1 (en) 2018-12-12
EP3411911B1 (en) 2022-12-21
JP2022095669A (ja) 2022-06-28
US10914796B2 (en) 2021-02-09
EP3411911A4 (en) 2019-03-27
JP7311943B2 (ja) 2023-07-20
WO2017136851A1 (en) 2017-08-10
US20170229639A1 (en) 2017-08-10
CN108604633A (zh) 2018-09-28

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