JP2019207923A5 - - Google Patents
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- Publication number
- JP2019207923A5 JP2019207923A5 JP2018101949A JP2018101949A JP2019207923A5 JP 2019207923 A5 JP2019207923 A5 JP 2019207923A5 JP 2018101949 A JP2018101949 A JP 2018101949A JP 2018101949 A JP2018101949 A JP 2018101949A JP 2019207923 A5 JP2019207923 A5 JP 2019207923A5
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- silicon wafer
- oxidizing power
- subjected
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 claims 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 230000001590 oxidative effect Effects 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- 239000007788 liquid Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 238000005406 washing Methods 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 claims 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018101949A JP6729632B2 (ja) | 2018-05-29 | 2018-05-29 | シリコンウェーハの洗浄方法 |
| KR1020207030653A KR20210015762A (ko) | 2018-05-29 | 2019-03-27 | 실리콘 웨이퍼의 세정방법 |
| PCT/JP2019/013054 WO2019230164A1 (ja) | 2018-05-29 | 2019-03-27 | シリコンウェーハの洗浄方法 |
| CN201980036009.9A CN112204712A (zh) | 2018-05-29 | 2019-03-27 | 硅晶圆的清洗方法 |
| TW108111633A TWI795547B (zh) | 2018-05-29 | 2019-04-02 | 矽晶圓的洗淨方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018101949A JP6729632B2 (ja) | 2018-05-29 | 2018-05-29 | シリコンウェーハの洗浄方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019207923A JP2019207923A (ja) | 2019-12-05 |
| JP2019207923A5 true JP2019207923A5 (enExample) | 2020-01-23 |
| JP6729632B2 JP6729632B2 (ja) | 2020-07-22 |
Family
ID=68698054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018101949A Active JP6729632B2 (ja) | 2018-05-29 | 2018-05-29 | シリコンウェーハの洗浄方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6729632B2 (enExample) |
| KR (1) | KR20210015762A (enExample) |
| CN (1) | CN112204712A (enExample) |
| TW (1) | TWI795547B (enExample) |
| WO (1) | WO2019230164A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI865651B (zh) | 2019-11-18 | 2024-12-11 | 日商索尼半導體解決方案公司 | 固體攝像裝置及電子機器 |
| JP7480738B2 (ja) | 2021-04-13 | 2024-05-10 | 信越半導体株式会社 | シリコンウェーハの洗浄方法及び自然酸化膜付きシリコンウェーハの製造方法 |
| JP2023048696A (ja) * | 2021-09-28 | 2023-04-07 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2832171B2 (ja) | 1995-04-28 | 1998-12-02 | 信越半導体株式会社 | 半導体基板の洗浄装置および洗浄方法 |
| JP3489329B2 (ja) | 1996-03-19 | 2004-01-19 | 信越半導体株式会社 | シリコンウエーハ表面の処理方法 |
| US6436723B1 (en) * | 1998-10-16 | 2002-08-20 | Kabushiki Kaisha Toshiba | Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device |
| JP3538114B2 (ja) * | 1999-09-30 | 2004-06-14 | 野村マイクロ・サイエンス株式会社 | 表面付着汚染物質の除去方法及び除去装置 |
| JP2002329691A (ja) | 2001-04-27 | 2002-11-15 | Shin Etsu Handotai Co Ltd | シリコンウェーハの洗浄方法 |
| JP4292872B2 (ja) * | 2003-05-29 | 2009-07-08 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
| JP2006208314A (ja) | 2005-01-31 | 2006-08-10 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハの結晶欠陥の評価方法 |
| JP4933071B2 (ja) * | 2005-09-08 | 2012-05-16 | コバレントマテリアル株式会社 | シリコンウエハの洗浄方法 |
| KR100841994B1 (ko) * | 2006-12-20 | 2008-06-27 | 주식회사 실트론 | 실리콘 웨이퍼의 산화막 제조 방법 |
| KR100931196B1 (ko) * | 2007-10-10 | 2009-12-10 | 주식회사 실트론 | 실리콘 웨이퍼 세정 방법 |
| KR20110036990A (ko) * | 2009-10-05 | 2011-04-13 | 주식회사 엘지실트론 | 균일 산화막 형성 방법 및 세정 방법 |
| JP2013251461A (ja) * | 2012-06-01 | 2013-12-12 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの洗浄方法 |
| JP2015041753A (ja) * | 2013-08-23 | 2015-03-02 | 株式会社東芝 | ウェハの洗浄方法 |
-
2018
- 2018-05-29 JP JP2018101949A patent/JP6729632B2/ja active Active
-
2019
- 2019-03-27 WO PCT/JP2019/013054 patent/WO2019230164A1/ja not_active Ceased
- 2019-03-27 KR KR1020207030653A patent/KR20210015762A/ko not_active Ceased
- 2019-03-27 CN CN201980036009.9A patent/CN112204712A/zh active Pending
- 2019-04-02 TW TW108111633A patent/TWI795547B/zh active
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