CN112204712A - 硅晶圆的清洗方法 - Google Patents

硅晶圆的清洗方法 Download PDF

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Publication number
CN112204712A
CN112204712A CN201980036009.9A CN201980036009A CN112204712A CN 112204712 A CN112204712 A CN 112204712A CN 201980036009 A CN201980036009 A CN 201980036009A CN 112204712 A CN112204712 A CN 112204712A
Authority
CN
China
Prior art keywords
cleaning
silicon wafer
oxide film
chemical oxide
evaluation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980036009.9A
Other languages
English (en)
Chinese (zh)
Inventor
阿部达夫
五十岚健作
大关正彬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of CN112204712A publication Critical patent/CN112204712A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201980036009.9A 2018-05-29 2019-03-27 硅晶圆的清洗方法 Pending CN112204712A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018101949A JP6729632B2 (ja) 2018-05-29 2018-05-29 シリコンウェーハの洗浄方法
JP2018-101949 2018-05-29
PCT/JP2019/013054 WO2019230164A1 (ja) 2018-05-29 2019-03-27 シリコンウェーハの洗浄方法

Publications (1)

Publication Number Publication Date
CN112204712A true CN112204712A (zh) 2021-01-08

Family

ID=68698054

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980036009.9A Pending CN112204712A (zh) 2018-05-29 2019-03-27 硅晶圆的清洗方法

Country Status (5)

Country Link
JP (1) JP6729632B2 (enExample)
KR (1) KR20210015762A (enExample)
CN (1) CN112204712A (enExample)
TW (1) TWI795547B (enExample)
WO (1) WO2019230164A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI865651B (zh) 2019-11-18 2024-12-11 日商索尼半導體解決方案公司 固體攝像裝置及電子機器
JP7480738B2 (ja) 2021-04-13 2024-05-10 信越半導体株式会社 シリコンウェーハの洗浄方法及び自然酸化膜付きシリコンウェーハの製造方法
JP2023048696A (ja) * 2021-09-28 2023-04-07 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001340817A (ja) * 1999-09-30 2001-12-11 Pyuarekkusu:Kk 表面付着汚染物質の除去方法及び除去装置
JP2004356416A (ja) * 2003-05-29 2004-12-16 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハの製造方法
JP2007073806A (ja) * 2005-09-08 2007-03-22 Toshiba Ceramics Co Ltd シリコンウエハの洗浄方法
KR20080057374A (ko) * 2006-12-20 2008-06-25 주식회사 실트론 실리콘 웨이퍼의 산화막 제조 방법
US20090095321A1 (en) * 2007-10-10 2009-04-16 Siltron Inc. Method for cleaning silicon wafer
KR20110036990A (ko) * 2009-10-05 2011-04-13 주식회사 엘지실트론 균일 산화막 형성 방법 및 세정 방법
JP2015041753A (ja) * 2013-08-23 2015-03-02 株式会社東芝 ウェハの洗浄方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2832171B2 (ja) 1995-04-28 1998-12-02 信越半導体株式会社 半導体基板の洗浄装置および洗浄方法
JP3489329B2 (ja) 1996-03-19 2004-01-19 信越半導体株式会社 シリコンウエーハ表面の処理方法
US6436723B1 (en) * 1998-10-16 2002-08-20 Kabushiki Kaisha Toshiba Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device
JP2002329691A (ja) 2001-04-27 2002-11-15 Shin Etsu Handotai Co Ltd シリコンウェーハの洗浄方法
JP2006208314A (ja) 2005-01-31 2006-08-10 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの結晶欠陥の評価方法
JP2013251461A (ja) * 2012-06-01 2013-12-12 Shin Etsu Handotai Co Ltd 半導体ウェーハの洗浄方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001340817A (ja) * 1999-09-30 2001-12-11 Pyuarekkusu:Kk 表面付着汚染物質の除去方法及び除去装置
JP2004356416A (ja) * 2003-05-29 2004-12-16 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハの製造方法
JP2007073806A (ja) * 2005-09-08 2007-03-22 Toshiba Ceramics Co Ltd シリコンウエハの洗浄方法
KR20080057374A (ko) * 2006-12-20 2008-06-25 주식회사 실트론 실리콘 웨이퍼의 산화막 제조 방법
US20090095321A1 (en) * 2007-10-10 2009-04-16 Siltron Inc. Method for cleaning silicon wafer
KR20110036990A (ko) * 2009-10-05 2011-04-13 주식회사 엘지실트론 균일 산화막 형성 방법 및 세정 방법
JP2015041753A (ja) * 2013-08-23 2015-03-02 株式会社東芝 ウェハの洗浄方法

Also Published As

Publication number Publication date
JP6729632B2 (ja) 2020-07-22
WO2019230164A1 (ja) 2019-12-05
JP2019207923A (ja) 2019-12-05
KR20210015762A (ko) 2021-02-10
TWI795547B (zh) 2023-03-11
TW202004885A (zh) 2020-01-16

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