JP2019201199A5 - - Google Patents
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- Publication number
- JP2019201199A5 JP2019201199A5 JP2019032985A JP2019032985A JP2019201199A5 JP 2019201199 A5 JP2019201199 A5 JP 2019201199A5 JP 2019032985 A JP2019032985 A JP 2019032985A JP 2019032985 A JP2019032985 A JP 2019032985A JP 2019201199 A5 JP2019201199 A5 JP 2019201199A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diamond semiconductor
- type
- semiconductor layer
- laminate according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 23
- 229910003460 diamond Inorganic materials 0.000 claims 15
- 239000010432 diamond Substances 0.000 claims 15
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims 8
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/290,442 US10847364B2 (en) | 2018-05-10 | 2019-03-01 | Laminated body and semiconductor device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018091273 | 2018-05-10 | ||
| JP2018091273 | 2018-05-10 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019201199A JP2019201199A (ja) | 2019-11-21 |
| JP2019201199A5 true JP2019201199A5 (enExample) | 2020-10-15 |
| JP7159080B2 JP7159080B2 (ja) | 2022-10-24 |
Family
ID=68612314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019032985A Active JP7159080B2 (ja) | 2018-05-10 | 2019-02-26 | 積層体および半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7159080B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114038750B (zh) * | 2021-11-05 | 2022-12-02 | 西安电子科技大学芜湖研究院 | 一种氮化镓功率器件的制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4404265A (en) * | 1969-10-01 | 1983-09-13 | Rockwell International Corporation | Epitaxial composite and method of making |
| JPH07245409A (ja) * | 1994-03-07 | 1995-09-19 | Mitsubishi Electric Corp | 半導体装置 |
| KR100933847B1 (ko) | 2002-06-18 | 2009-12-24 | 스미토모덴키고교가부시키가이샤 | ｎ형 반도체 다이아몬드 제조 방법 및 반도체 다이아몬드 |
| JP4683836B2 (ja) | 2003-12-12 | 2011-05-18 | 株式会社神戸製鋼所 | ダイヤモンド半導体素子及びその製造方法 |
| JP4450719B2 (ja) | 2004-10-22 | 2010-04-14 | 株式会社神戸製鋼所 | 半導体素子の製造方法 |
| WO2006103853A1 (ja) | 2005-03-25 | 2006-10-05 | Japan Science And Technology Agency | 二酸化チタンを活性層として用いる半導体装置およびその製造方法 |
| US8653533B2 (en) | 2009-09-07 | 2014-02-18 | Rohm Co., Ltd. | Semiconductor device and method of manufacturing the same |
| WO2011103558A1 (en) | 2010-02-22 | 2011-08-25 | Nantero, Inc. | Logic elements comprising carbon nanotube field effect transistor (cntfet) devices and methods of making same |
| US8933462B2 (en) | 2011-12-21 | 2015-01-13 | Akhan Semiconductor, Inc. | Method of fabricating diamond semiconductor and diamond semiconductor formed according to the method |
| CN102916039B (zh) | 2012-10-19 | 2016-01-20 | 清华大学 | 具有氧化铍的半导体结构 |
| JP6104575B2 (ja) | 2012-11-28 | 2017-03-29 | 株式会社東芝 | 半導体装置 |
| US20150001623A1 (en) | 2013-06-26 | 2015-01-01 | Tsinghua University | Field effect transistor and method for forming the same |
-
2019
- 2019-02-26 JP JP2019032985A patent/JP7159080B2/ja active Active
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