JP7159080B2 - 積層体および半導体装置 - Google Patents

積層体および半導体装置 Download PDF

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Publication number
JP7159080B2
JP7159080B2 JP2019032985A JP2019032985A JP7159080B2 JP 7159080 B2 JP7159080 B2 JP 7159080B2 JP 2019032985 A JP2019032985 A JP 2019032985A JP 2019032985 A JP2019032985 A JP 2019032985A JP 7159080 B2 JP7159080 B2 JP 7159080B2
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layer
beryllium oxide
diamond semiconductor
oxide layer
diamond
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Japanese (ja)
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JP2019201199A5 (enExample
JP2019201199A (ja
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久生 宮崎
忠司 酒井
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Toshiba Corp
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Toshiba Corp
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Priority to US16/290,442 priority Critical patent/US10847364B2/en
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JP2019032985A 2018-05-10 2019-02-26 積層体および半導体装置 Active JP7159080B2 (ja)

Priority Applications (1)

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US16/290,442 US10847364B2 (en) 2018-05-10 2019-03-01 Laminated body and semiconductor device

Applications Claiming Priority (2)

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JP2018091273 2018-05-10
JP2018091273 2018-05-10

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JP2019201199A JP2019201199A (ja) 2019-11-21
JP2019201199A5 JP2019201199A5 (enExample) 2020-10-15
JP7159080B2 true JP7159080B2 (ja) 2022-10-24

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114038750B (zh) * 2021-11-05 2022-12-02 西安电子科技大学芜湖研究院 一种氮化镓功率器件的制备方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005175278A (ja) 2003-12-12 2005-06-30 Kobe Steel Ltd ダイヤモンド半導体素子及びその製造方法
JP2006120885A (ja) 2004-10-22 2006-05-11 Kobe Steel Ltd 半導体素子の製造方法
WO2006103853A1 (ja) 2005-03-25 2006-10-05 Japan Science And Technology Agency 二酸化チタンを活性層として用いる半導体装置およびその製造方法
JP4218639B2 (ja) 2002-06-18 2009-02-04 住友電気工業株式会社 ｎ型半導体ダイヤモンド製造方法及び半導体ダイヤモンド
US20130161648A1 (en) 2011-12-21 2013-06-27 Akhan Technologies, Inc. Diamond Semiconductor System and Method
US20130181189A1 (en) 2010-02-22 2013-07-18 Nantero, Inc. Logic Elements Comprising Carbon Nanotube Field Effect Transistor (CNTFET) Devices and Methods of Making Same
US20140145314A1 (en) 2012-10-19 2014-05-29 Jing Wang Semiconductor structure with beryllium oxide
JP2014107454A (ja) 2012-11-28 2014-06-09 Toshiba Corp 半導体装置
US20150001623A1 (en) 2013-06-26 2015-01-01 Tsinghua University Field effect transistor and method for forming the same
JP2015073123A (ja) 2009-09-07 2015-04-16 ローム株式会社 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404265A (en) * 1969-10-01 1983-09-13 Rockwell International Corporation Epitaxial composite and method of making
JPH07245409A (ja) * 1994-03-07 1995-09-19 Mitsubishi Electric Corp 半導体装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4218639B2 (ja) 2002-06-18 2009-02-04 住友電気工業株式会社 ｎ型半導体ダイヤモンド製造方法及び半導体ダイヤモンド
JP2005175278A (ja) 2003-12-12 2005-06-30 Kobe Steel Ltd ダイヤモンド半導体素子及びその製造方法
JP2006120885A (ja) 2004-10-22 2006-05-11 Kobe Steel Ltd 半導体素子の製造方法
WO2006103853A1 (ja) 2005-03-25 2006-10-05 Japan Science And Technology Agency 二酸化チタンを活性層として用いる半導体装置およびその製造方法
JP2015073123A (ja) 2009-09-07 2015-04-16 ローム株式会社 半導体装置
US20130181189A1 (en) 2010-02-22 2013-07-18 Nantero, Inc. Logic Elements Comprising Carbon Nanotube Field Effect Transistor (CNTFET) Devices and Methods of Making Same
US20130161648A1 (en) 2011-12-21 2013-06-27 Akhan Technologies, Inc. Diamond Semiconductor System and Method
US20140145314A1 (en) 2012-10-19 2014-05-29 Jing Wang Semiconductor structure with beryllium oxide
JP2014107454A (ja) 2012-11-28 2014-06-09 Toshiba Corp 半導体装置
US20150001623A1 (en) 2013-06-26 2015-01-01 Tsinghua University Field effect transistor and method for forming the same

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