JP2019193959A - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP2019193959A JP2019193959A JP2018088225A JP2018088225A JP2019193959A JP 2019193959 A JP2019193959 A JP 2019193959A JP 2018088225 A JP2018088225 A JP 2018088225A JP 2018088225 A JP2018088225 A JP 2018088225A JP 2019193959 A JP2019193959 A JP 2019193959A
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- processing method
- polyethylene
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- 238000003672 processing method Methods 0.000 title claims abstract description 15
- 238000005520 cutting process Methods 0.000 claims abstract description 80
- 238000010438 heat treatment Methods 0.000 claims abstract description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000011521 glass Substances 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229920000098 polyolefin Polymers 0.000 claims abstract description 9
- 229920000728 polyester Polymers 0.000 claims abstract description 8
- -1 polyethylene Polymers 0.000 claims description 79
- 239000004698 Polyethylene Substances 0.000 claims description 63
- 229920000573 polyethylene Polymers 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 28
- 238000003825 pressing Methods 0.000 claims description 13
- 239000004743 Polypropylene Substances 0.000 claims description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 7
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 7
- 229920001155 polypropylene Polymers 0.000 claims description 7
- 239000004793 Polystyrene Substances 0.000 claims description 6
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 6
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 5
- 229920002223 polystyrene Polymers 0.000 claims description 5
- 238000002788 crimping Methods 0.000 abstract description 7
- 238000000926 separation method Methods 0.000 abstract description 4
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 238000002844 melting Methods 0.000 description 12
- 230000008018 melting Effects 0.000 description 12
- 238000007664 blowing Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
上記したウエーハ10を用意したならば、シート圧着工程を実施する。より具体的には、まず、図1(a)に示すように、シート圧着工程を実施するためのチャックテーブル20を用意する。チャックテーブル20は、通気性を有する多孔質のポーラスセラミックからなる円盤形状の吸着チャック20aと、吸着チャック20aの外周を囲繞する円形枠部20bとからなる。チャックテーブル20は、図示しない吸引手段に接続され、吸着チャック20aの上面(保持面)に載置されるウエーハ10を吸引保持する。
図3に示すように、ウエーハ10及びポリエチレンシート30を吸引保持したチャックテーブル20上に、切断手段70(一部のみ示す。)を位置付ける。より具体的には、切断手段70は、ポリエチレンシート30を切断するための円盤形状のブレードカッター72と、ブレードカッター72を矢印R2で示す方向に回転駆動するためのモータ74とを備え、ブレードカッター72の刃先を、ウエーハ10の外周位置になるように位置付ける。ブレードカッター72がウエーハ10の外周位置に位置付けられたならば、ブレードカッター72をポリエチレンシート30の厚みだけ切込み送りし、チャックテーブル20を矢印R3で示す方向に回転させる。これにより、ポリエチレンシート30が、ウエーハ10の外周に沿って切断され、ウエーハ10の外周からはみ出したポリエチレンシート30の外周部を切断して切り離すことができる。以上により、切断工程が完了する。
上記した切断工程を完了したならば、ウエーハ支持工程を実施する。ウエーハ支持工程について、図4、及び図5を参照しながら説明する。ウエーハ支持工程を実施するに際し、図4に示すように、ウエーハ10を収容することが可能な大きさの開口Faを有する環状のフレームFを用意する。フレームFを用意したならば、ウエーハ10の裏面10bをダイシングテープTに貼着すると共に、ウエーハ10をフレームFの開口Faの中央に位置付けて、ダイシングテープTにフレームFを貼着し、ダイシングテープTを介してウエーハ10をフレームFで支持する。
上記したように、分割工程が完了したならば、次いで、シート剥離工程を実施する。図7を参照しながら、個々のデバイス12の表面10aからポリエチレンシート30を剥離するシート剥離工程について説明する。
12:デバイス
14:分割予定ライン
20:チャックテーブル
20a:吸着チャック
20b:円形枠部
30:ポリエチレンシート
40:熱風吹付け手段
50:赤外線照射手段
60:加熱ローラ手段
62:加熱ローラ
70:切断手段
72:ブレードカッター
80:リング部材
90:切削装置
91:スピンドルユニット
93:切削ブレード
100:分離溝
F:フレーム
T:ダイシングテープ
WT:切削水
Claims (6)
- ガラス基板の上面に金属パターンが配設された複数のデバイスが複数の分割予定ラインによって区画されたウエーハを個々のデバイスに分割するウエーハの加工方法であって、
ポリオレフィン系又はポリエステル系のシートをウエーハの表面に敷設して加熱し、該シートをウエーハの表面に熱圧着するシート圧着工程と、
ウエーハの裏面をダイシングテープで貼着すると共にウエーハを収容する開口を有する環状のフレームを該ダイシングテープに貼着するウエーハ支持工程と、
切削水を供給しながら環状の切り刃を外周に備えた切削ブレードを回転させウエーハの分割予定ラインに沿って該シートと共に切削して該ウエーハを個々のデバイスに分割する分割工程と、
デバイスの表面から該シートを剥離するシート剥離工程と、
から少なくとも構成されるウエーハの加工方法。 - 該ウエーハ支持工程において、ウエーハを囲繞する環状の側壁をなすリング部材を配設し、ウエーハの表面を水で覆うためのプールを形成し、
該分割工程において、該プールに切削水を満たしウエーハを水没させる請求項1に記載のウエーハの加工方法。 - 該ポリオレフィン系のシートは、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシートのいずれかから選択される請求項1に記載のウエーハの加工方法。
- 該シート圧着工程において、該ポリエチレンシートが選択された場合の加熱温度は120〜140℃であり、該ポリプロピレンシートが選択された場合の加熱温度は160〜180℃であり、該ポリスチレンシートの加熱温度は220〜240℃である請求項3に記載のウエーハの加工方法。
- 該ポリエステル系のシートは、ポリエチレンテレフタレートシート、ポリエチレンナフタレートシートのいずれかから選択される請求項1に記載のウエーハの加工方法。
- 該シート圧着工程において、該ポリエチレンテレフタレートシートが選択された場合の加熱温度は250〜270℃であり、該ポリエチレンナフタレートシートが選択された場合の加熱温度は160〜180℃である請求項5に記載のウエーハの加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018088225A JP7214364B2 (ja) | 2018-05-01 | 2018-05-01 | ウエーハの加工方法 |
CN201910337358.6A CN110429062B (zh) | 2018-05-01 | 2019-04-25 | 晶片的加工方法 |
TW108114539A TWI813674B (zh) | 2018-05-01 | 2019-04-25 | 晶圓的加工方法 |
KR1020190050666A KR20190126252A (ko) | 2018-05-01 | 2019-04-30 | 웨이퍼의 가공 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2018088225A JP7214364B2 (ja) | 2018-05-01 | 2018-05-01 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
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JP2019193959A true JP2019193959A (ja) | 2019-11-07 |
JP7214364B2 JP7214364B2 (ja) | 2023-01-30 |
Family
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JP2018088225A Active JP7214364B2 (ja) | 2018-05-01 | 2018-05-01 | ウエーハの加工方法 |
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JP (1) | JP7214364B2 (ja) |
KR (1) | KR20190126252A (ja) |
CN (1) | CN110429062B (ja) |
TW (1) | TWI813674B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210129260A1 (en) * | 2019-11-06 | 2021-05-06 | Disco Corporation | Wafer processing method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005096052A (ja) * | 2003-09-26 | 2005-04-14 | Disco Abrasive Syst Ltd | マイクロマシンウェーハの分割方法及びダイシングフレーム |
JP2010212310A (ja) * | 2009-03-06 | 2010-09-24 | Nitto Denko Corp | 素子のダイシング方法 |
JP2014197675A (ja) * | 2013-03-07 | 2014-10-16 | 住友ベークライト株式会社 | 接着フィルム、ダイシングシート一体型接着フィルム、バックグラインドテープ一体型接着フィルム、バックグラインドテープ兼ダイシングシート一体型接着フィルム、積層体、積層体の硬化物、および半導体装置、並び半導体装置の製造方法 |
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JP3076179B2 (ja) | 1993-07-26 | 2000-08-14 | 株式会社ディスコ | ダイシング装置 |
JP2005158782A (ja) * | 2003-11-20 | 2005-06-16 | Disco Abrasive Syst Ltd | 半導体ウェーハの加工方法。 |
CN103748664B (zh) * | 2011-08-09 | 2016-04-20 | 三井化学东赛璐株式会社 | 半导体装置的制造方法及该方法中所使用的半导体晶片表面保护用膜 |
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- 2018-05-01 JP JP2018088225A patent/JP7214364B2/ja active Active
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- 2019-04-25 TW TW108114539A patent/TWI813674B/zh active
- 2019-04-25 CN CN201910337358.6A patent/CN110429062B/zh active Active
- 2019-04-30 KR KR1020190050666A patent/KR20190126252A/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005096052A (ja) * | 2003-09-26 | 2005-04-14 | Disco Abrasive Syst Ltd | マイクロマシンウェーハの分割方法及びダイシングフレーム |
JP2010212310A (ja) * | 2009-03-06 | 2010-09-24 | Nitto Denko Corp | 素子のダイシング方法 |
JP2014197675A (ja) * | 2013-03-07 | 2014-10-16 | 住友ベークライト株式会社 | 接着フィルム、ダイシングシート一体型接着フィルム、バックグラインドテープ一体型接着フィルム、バックグラインドテープ兼ダイシングシート一体型接着フィルム、積層体、積層体の硬化物、および半導体装置、並び半導体装置の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210129260A1 (en) * | 2019-11-06 | 2021-05-06 | Disco Corporation | Wafer processing method |
US11712747B2 (en) * | 2019-11-06 | 2023-08-01 | Disco Corporation | Wafer processing method |
Also Published As
Publication number | Publication date |
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KR20190126252A (ko) | 2019-11-11 |
TW201946142A (zh) | 2019-12-01 |
JP7214364B2 (ja) | 2023-01-30 |
CN110429062B (zh) | 2024-04-02 |
CN110429062A (zh) | 2019-11-08 |
TWI813674B (zh) | 2023-09-01 |
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