TWI813674B - 晶圓的加工方法 - Google Patents
晶圓的加工方法 Download PDFInfo
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- TWI813674B TWI813674B TW108114539A TW108114539A TWI813674B TW I813674 B TWI813674 B TW I813674B TW 108114539 A TW108114539 A TW 108114539A TW 108114539 A TW108114539 A TW 108114539A TW I813674 B TWI813674 B TW I813674B
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
提供一種晶圓的加工方法,可以不使元件的品質降低來切割晶圓,前述晶圓是在玻璃基板的上表面形成有複數個藉由沉積等而由金屬圖案所構成的元件之晶圓。
本發明之晶圓的加工方法是至少由下述之步驟所構成:片材壓接步驟,將聚烯烴系或聚酯系的片材鋪設於晶圓的正面並加熱,以將該片材熱壓接於晶圓的正面;晶圓支撐步驟,以切割膠帶來貼附晶圓的背面,並且將環狀的框架貼附於切割膠帶,前述環狀的框架具有收容晶圓的開口;分割步驟,一邊供給切割水一邊使在外周具備環狀的切割刃之切割刀片旋轉,而沿著晶圓的分割預定線和該片材一起切割,以將該晶圓分割成一個個的元件;及剝離步驟,從晶圓的正面剝離該片材。
Description
發明領域
本發明是有關於一種對在玻璃基板的上表面配設有金屬圖案的晶圓進行切割來分割成一個個的元件之晶圓的加工方法。
發明背景
有複數個IC、LSI等元件被分割預定線分隔形成在正面之晶圓是藉由切割裝置而被分割成一個個的元件,且被利用於行動電話、個人電腦等電氣設備上。
切割裝置是由保持機構、切割機構、及進給機構所構成,能夠高精度地切割晶圓,前述保持機構會保持晶圓,前述切割機構會一邊對該保持機構所保持的晶圓供給切割水,一邊以旋轉的切割刀片來切割分割預定線,前述進給機構會對該保持機構與該切割機構進行加工進給(例如,參照專利文獻1)。
先前技術文獻
專利文獻
專利文獻1:日本專利特開平07-045556號公報
發明概要
已經嘗試藉由專利文獻1所記載之以往的切割裝置來切割晶圓,前述晶圓是有複數個藉由沉積等而由金屬圖案所構成的元件被分割預定線分隔形成在玻璃基板的上表面之晶圓。但是,在專利文獻1所記載之以往的切割裝置中,由於是朝向對晶圓切入切割刀片的位置強力地噴射切割水來實施切割,因此會發生沉積於玻璃基板的金屬圖案剝離、或金屬圖案的一部分損傷之問題。
又,為了應對上述問題,也可考慮不供給切割水,而是實施例如一邊供給冷卻空氣一邊切割之所謂的乾切(Dry cut)。但是,已知若不對玻璃基板的切割部位供給切割水就要切割,就無法得到供給切割水時所能得到的化學機械效果(藉由供給水,將構成玻璃的氧與矽的結合弱化之效果),切割溝的兩側會破損而使元件的品質明顯地降低。
本發明是有鑒於上述事實所完成的發明,其主要技術課題在於提供一種晶圓的加工方法,可以不使元件的品質降低來切割晶圓,前述晶圓是在玻璃基板的上表面形成有複數個包含金屬圖案的元件之晶圓,前述金屬圖案是藉由沉積等所形成。
為了解決上述主要技術課題,根據本發明,提供一種晶圓的加工方法,是將晶圓分割成一個個的元件
之晶圓的加工方法,前述晶圓是在玻璃基板的上表面藉由複數條分割預定線來分隔複數個配設有金屬圖案的元件之晶圓,前述晶圓的加工方法是至少由下述之步驟所構成:片材壓接步驟,將聚烯烴系或聚酯系的片材鋪設於晶圓的正面並加熱,以將該片材熱壓接於晶圓的正面;晶圓支撐步驟,以切割膠帶來貼附晶圓的背面,並且將環狀的框架貼附於該切割膠帶,前述環狀的框架具有收容晶圓的開口;分割步驟,一邊供給切割水一邊使在外周具備環狀的切割刃之切割刀片旋轉,而沿著晶圓的分割預定線和該片材一起切割,以將該晶圓分割成一個個的元件;及剝離步驟,從晶圓的正面剝離該片材。
較理想的是,在該晶圓支撐步驟中配設環形構件,形成以水覆蓋晶圓的正面用的水池,前述環形構件會形成圍繞晶圓之環狀的側壁,在該分割步驟中,將切割水充滿該水池並使晶圓沒入於水中。
選擇該聚烯烴系的片材之情況下,可以選自於聚乙烯片材、聚丙烯片材、聚苯乙烯片材之任一者。較理想的是,在該片材壓接步驟中,選擇了該聚乙烯片材的情況之加熱溫度為120~140℃,選擇了該聚丙烯片材的情況之加熱溫度為160~180℃,選擇了該聚苯乙烯片材的情況之加熱溫度是設為220~240℃。又,選擇該聚酯系的片材之情況下,可以選自於聚對苯二甲酸乙二酯片材、聚萘二甲酸乙二酯片材之任一者。較理想的是,在該片材壓接步驟中,選擇了該聚對苯二甲酸乙二酯片材的情況之加熱
溫度為250~270℃,選擇了該聚萘二甲酸乙二酯片材的情況之加熱溫度是設為160~180℃。
本發明之晶圓的加工方法是至少由下述之步驟所構成:片材壓接步驟,將聚烯烴系或聚酯系的片材鋪設於晶圓的正面並加熱,以將該片材熱壓接於晶圓的正面;晶圓支撐步驟,以切割膠帶來貼附晶圓的背面,並且將環狀的框架貼附於該切割膠帶,前述環狀的框架具有收容晶圓的開口;分割步驟,一邊供給切割水一邊使在外周具備環狀的切割刃之切割刀片旋轉,而沿著晶圓的分割預定線和該片材一起切割,以將該晶圓分割成一個個的元件;及剝離步驟,從晶圓的正面剝離該片材,藉此,即使供給切割水,鋪設於玻璃基板的金屬圖案仍不會剝離或破損,而可以藉由化學機械效果來順利地分割晶圓。又,片材不具有由膠劑等所構成的黏著層,而是藉由熱壓接來配設於晶圓上,因此從元件剝離片材時,也不會使金屬圖案破損,並且不會使元件的品質降低。
10:晶圓
10a:正面
10b:背面
12:元件
14:分割預定線
20:工作夾台
20a:吸附夾頭
20b:圓形框部
30:聚乙烯片材
32:黏著膠帶
40:熱風吹送機構
50:紅外線照射機構
60:加熱輥機構
62:加熱輥
64:旋轉軸
70:切斷機構
72:切割刀
74:馬達
80:環形構件
90:切割裝置
91:主軸單元
92:旋轉主軸
93:切割刀片
94:主軸殼體
95:切割水供給機構
100:分離溝
F:框架
Fa:開口
L:紅外線
T:切割膠帶
Vm:吸引力
W:熱風
WT:切割水
X、R1、R2、R3:箭頭
圖1是顯示在本實施形態的片材壓接步驟中,將晶圓與片材一體化的態樣之立體圖。
圖2是顯示在本實施形態的片材壓接步驟中,對片材進行熱壓接的態樣之立體圖。
圖3是顯示本實施形態的切斷步驟的實施態樣之立體圖。
圖4是顯示在本實施形態的晶圓支撐步驟中,以框架來支撐晶圓的態樣之立體圖。
圖5是顯示在本實施形態的晶圓支撐步驟中,配設環形構件來形成圍繞晶圓之側壁的態樣之立體圖。
圖6是顯示本實施形態的分割步驟的實施態樣之立體圖。
圖7是顯示本實施形態的片材剝離步驟的實施態樣之立體圖。
用以實施發明之形態
以下,針對本發明之實施形態之晶圓的加工方法,一邊參照附加圖式一邊詳細地進行說明。
在實施本實施形態之晶圓的加工方法時,首先,如圖1(a)所示,準備在本實施形態中成為被加工物的晶圓10。此晶圓10具備圓盤形狀的玻璃基板,具有3mm左右的厚度,該玻璃基板的上表面是藉由複數條分割預定線14來分隔,且在該分隔的各區域各自形成有包含金屬圖案的元件12,前述金屬圖案是藉由濺鍍或真空沉積之薄膜法等所形成。
(片材壓接步驟)
準備了上述之晶圓10後,即實施片材壓接步驟。更具體而言,首先,如圖1(a)所示,準備實施片材壓接步驟用的工作夾台(chuck table)20。工作夾台20是由圓盤形狀的吸附夾頭20a與圓形框部20b所構成,前述吸附夾頭20a是
由具有通氣性之多孔質的多孔陶瓷所構成,前述圓形框部20b是圍繞吸附夾頭20a的外周。工作夾台20是連接於未圖示的吸引機構,以吸引保持吸附夾頭20a的上表面(保持面)所載置的晶圓10。
準備了晶圓10與工作夾台20後,如圖所示,相對於吸附夾頭20a的保持面,將晶圓10的背面10b側朝下,而載置於吸附夾頭20a的中心。將晶圓10載置於吸附夾頭20a後,如圖1(b)所示,在晶圓10的正面10a側上,載置以20~100μm的厚度所形成之圓形的聚烯烴系片材,例如聚乙烯(PE)片材30。如從圖1(b)所理解,吸附夾頭20a的直徑是設定成比晶圓10的直徑略大,藉由將晶圓10載置於吸附夾頭20a的中心,即可使包圍晶圓10的外周之吸附夾頭20a露出。此外,聚乙烯片材30是以比吸附夾頭20a的直徑更大的直徑來形成,較理想的是,以比工作夾台20的圓形框部20b的外徑稍小的直徑來形成。藉此,吸附夾頭20a即受到晶圓10及聚乙烯片材30所覆蓋。另外,在聚乙烯片材30之載置於晶圓10的載置面側並未形成有膠劑等之黏著層。
將晶圓10及聚乙烯片材30載置於工作夾台20後,使包含吸引泵浦等之未圖示的吸引機構作動,使吸引力Vm作用於吸附夾頭20a,以吸引晶圓10及聚乙烯片材30。如上所述,由於是藉由晶圓10及聚乙烯片材30來覆蓋吸附夾頭20a的上表面(保持面)整面,因此吸引力Vm會作用於晶圓10及聚乙烯片材30整體,而將晶圓10與聚乙烯片
材30吸引保持於吸附夾頭20a上,並且吸引晶圓10與聚乙烯片材30之間所殘存的空氣以使兩者密合。在晶圓10的正面10a上,藉由包含金屬圖案的複數個元件12而形成有微小的凹凸,藉由工作夾台20之未圖示的吸引機構來吸引保持,藉此即可成為聚乙烯片材30密合於晶圓10的正面10a的凹凸面之狀態。
藉由使吸引機構作動而設成將聚乙烯片材30密合於晶圓10的正面10a的凹凸面之狀態後,如圖2(a)所示,在工作夾台20的上方,將作為熱壓接機構的熱風吹送機構40定位,前述熱壓接機構是將聚乙烯片材30熱壓接於晶圓10的機構。熱風吹送機構40是構成為:在面對工作夾台20側的出口側(圖中下側)具備加熱部,並且在相反側(圖中上側)具備藉由馬達等所驅動的風扇部,前述加熱部具備恆溫器等之溫度調整機構,藉由驅動該加熱部及風扇部,即可朝向晶圓10吹送熱風W。藉由此熱風吹送機構40將熱風W吹送至聚乙烯片材30所覆蓋之晶圓10的正面10a側整體,而將聚乙烯片材30加熱至熔點附近的120~140℃,使聚乙烯片材30逐漸地軟化。像這樣藉由熱風吹送機構40來加熱,並且使藉由工作夾台20側之未圖示的吸引機構所作用的負壓與外部的壓力(大氣壓)之間的壓力差起作用,藉此即可將聚乙烯片材30熱壓接於晶圓10的正面10a,使晶圓10與聚乙烯片材30一體化,而完成片材壓接步驟。另外,將聚乙烯片材30加熱而與晶圓10熱壓接的熱壓接機構並不限定於圖2(a)所示的熱風吹送機構40,也可
以選擇其他機構。一邊參照圖2(b)及圖2(c),一邊針對其他熱壓接機構進行說明。
作為其他熱壓接機構,也可以取代上述之熱風吹送機構40,改選擇圖2(b)所示的紅外線照射機構50(僅顯示一部分)。紅外線照射機構50是藉由照射紅外線L來加熱照射對象的機構。選擇了紅外線照射機構50來作為熱壓接機構的情況下,如圖2(b)所示,和選擇了上述熱風吹送機構40的情況同樣地,在已吸引保持晶圓10及聚乙烯片材30的工作夾台20的上方,將加熱聚乙烯片材30用的紅外線照射機構50定位。將紅外線照射機構50定位於工作夾台20的上方後,藉由紅外線照射機構50對聚乙烯片材30所覆蓋之晶圓10整體照射紅外線L,而使聚乙烯片材30加熱至熔點附近的120~140℃。聚乙烯片材30是藉由受到加熱而逐漸地軟化,並且在聚乙烯片材30密合於晶圓10的正面10a側的狀態下受到熱壓接,使晶圓10與聚乙烯片材30一體化,而完成片材壓接步驟。
此外,作為另一種熱壓接機構,也可以選擇圖2(c)所示的加熱輥機構60(僅顯示一部分)。更具體而言,在已吸引保持晶圓10及聚乙烯片材30的狀態的工作夾台20的上方,將加熱並按壓聚乙烯片材30用的加熱輥機構60定位。雖然省略詳細內容,但加熱輥機構60具備內置未圖示的加熱器之加熱輥62、以及使加熱輥62旋轉用的旋轉軸64,在加熱輥62的表面上施加有氟樹脂加工。將加熱輥機構60定位於工作夾台20的上方後,使內置於加熱輥62
的加熱器作動,並按壓聚乙烯片材30所覆蓋之晶圓10的正面10a側整體,使加熱輥62一邊往箭頭R1所示的方向來旋轉,一邊往箭頭X方向來移動。內置於加熱輥62的未圖示加熱器是調整成會使聚乙烯片材30成為熔點附近的120~140℃。藉由此加熱及按壓,和藉由上述熱風吹送機構40、或紅外線照射機構50而一體化同樣地,可以在使聚乙烯片材30密合於藉由晶圓10的正面10a的元件12所形成之微小的凹凸面之狀態下進行熱壓接,使晶圓10與聚乙烯片材30一體化,而完成片材壓接步驟。另外,作為實施片材壓接步驟之又另一種熱壓接機構,也可以取代上述之加熱輥62,改採用具備加熱器之板狀的按壓構件,以按壓聚乙烯片材30而與晶圓10熱壓接。又,作為藉由上述之各熱壓接機構將聚乙烯片材30加熱時的溫度,雖然是設為聚乙烯片材30的熔點附近的溫度(120℃~140℃),但是也可以設定成比此溫度更低些許的溫度,例如,從熔點附近到低50℃左右的溫度之溫度範圍。
在本實施形態中,繼上述之片材壓接步驟之後,考量到後續步驟中所實施的分割步驟,會實施將聚乙烯片材30沿著晶圓10的外形形狀來切斷的切斷步驟。另外,雖然此切斷步驟並不一定要實施,但是實施此切斷步驟可使與聚乙烯片材30一體化的晶圓10變得較容易處理,對後述之分割步驟而言較為便利。以下,一邊參照圖3,一邊針對切斷步驟進行說明。
(切斷步驟)
如圖3所示,在已吸引保持晶圓10及聚乙烯片材30的工作夾台20上,將切斷機構70(僅顯示一部分)定位。更具體而言,切斷機構70具備:切斷聚乙烯片材30用的圓盤形狀的切割刀72、以及將切割刀72往箭頭R2所示的方向來旋轉驅動用的馬達74,並且將切割刀72的刀口定位成會成為晶圓10的外周位置。切割刀72被定位於晶圓10的外周位置後,將切割刀72切入進給至恰好為聚乙烯片材30的厚度,並且使工作夾台20往箭頭R3所示的方向來旋轉。藉此,即可沿著晶圓10的外周來切斷聚乙烯片材30,而可以將從晶圓10的外周露出的聚乙烯片材30的外周緣切斷並切離。藉由以上,即完成切斷步驟。
(晶圓支撐步驟)
完成上述之切斷步驟後,即實施晶圓支撐步驟。一邊參照圖4及圖5,一邊針對晶圓支撐步驟進行說明。在實施晶圓支撐步驟時,如圖4所示,準備環狀的框架F,前述環狀的框架F具有大小可收容晶圓10的開口Fa。準備了框架F後,將晶圓10的背面10b貼附於切割膠帶T,並且將晶圓10定位於框架F的開口Fa之中央,並將框架F貼附於切割膠帶T,以透過切割膠帶T由框架F來支撐晶圓10。
在本實施形態中,再如圖5所示,準備環形構件80來形成圍繞晶圓10之環狀的側壁。此環形構件80可以由例如海綿或胺甲酸乙酯等之具有柔軟性的發泡性樹脂構件所構成。如圖5所示,環形構件80是以比晶圓10更大的內徑所形成,並且在切割膠帶T上配設成圍繞晶圓
10。切割膠帶T上所配設的環形構件80的厚度(高度)為了要變得比晶圓10的正面10a側所鋪設的聚乙烯片材30的正面高度更高,而設定成例如6mm左右的厚度。另外,此環形構件80也可以作成為比框架F的開口Fa稍大的直徑,而配設於框架F上。藉由以上,即完成晶圓支撐步驟。
晶圓支撐步驟完成後,接著,實施將晶圓10分割成一個個的元件12的分割步驟。一邊參照圖6,一邊針對分割步驟進行說明。
如圖6(a)所示,分割步驟是藉由例如具備有主軸單元91的切割裝置90(省略裝置整體的圖示)來執行。主軸單元91具備有保持切割刀片93的主軸殼體94,前述切割刀片93固定在旋轉主軸92的前端部。在主軸殼體94中,在鄰接於切割刀片93的位置上配設有切割水供給機構95,並且構成為可以將切割水WT朝向環形構件80的內側來供給。在本實施形態中,配設有圍繞晶圓10而形成環狀的側壁之環形構件80,且從上述之切割水供給機構95將切割水WT供給至環形構件80內側,藉此便如圖6(b)中作為將一部分放大的側面圖所示,在環形構件80內形成充滿切割水WT的水池。該水池的水深是設定成:在供給了切割水WT的情況下,熱壓接於晶圓10的聚乙烯片材30會完全地沒入於水中的深度。使高速旋轉的切割刀片93相對於切割裝置90的該水池內所支撐的晶圓10下降並切入,並且使晶圓10相對於切割刀片93往箭頭X所示的加工進給方向來移動,藉此便會沿著分割預定線14,以和聚乙烯片材30一
起將晶圓10完全地分割的深度,來形成規定的溝寬(例如50μm)的分離溝100。藉由使晶圓10相對於切割刀片93來適當移動,即可沿著晶圓10的全部的分割預定線14來形成分離溝100,而分割成一個個的元件12。藉由以上,即完成分割步驟。
在上述分割步驟中,於正面10a側貼附有聚乙烯片材30的晶圓10,是以在環形構件80內所形成的水池內完全地沒入於水中的狀態而受到切割刀片93切割。藉此,即能夠在可得到乾淨地切割玻璃基板用的化學機械效果之狀態下來切割,並且在由切割水供給機構95所供給之切割水的力道受到貯留於水池中的切割水WT抑制之狀態下來切割,因此即使藉由高速旋轉的切割刀片93來切割,仍然不會使聚乙烯片材30剝離而可以乾淨地分割晶圓10。此外,由於切割水供給機構95所供給的切割水WT的量是對伴隨於切割時的切割刀片93的旋轉而被掃出至環形構件80外的切割水WT進行補給的量,因此和不藉由環形構件80來形成水池,而是將切割水集中地供給至切割部位的情況之切割水的供給量相較之下,變得可以大幅地減少。又,由於環形構件80是以具有柔軟性的發泡性樹脂(例如,海綿、胺甲酸乙酯等)所構成,因此即使切割刀片93接觸到也不會發生切割刀片93的刀刃缺損等之問題,而較為便利。
(片材剝離步驟)
如上所述,分割步驟完成後,接著,實施片材剝離步
驟。一邊參照圖7,一邊針對從一個個的元件12的正面10a剝離聚乙烯片材30的片材剝離步驟進行說明。
在實施片材剝離步驟時,首先,如圖7(a)所示,將環形構件80從切割膠帶T上取下。從切割膠帶T上取下了環形構件80,並且藉由乾燥步驟等去除了水分後,如圖7(b)所示,在貼附有聚乙烯片材30之晶圓10的上表面貼上寬度較大的黏著膠帶32,以從晶圓10的上表面剝離聚乙烯片材30。聚乙烯片材30在上述之分割步驟中,已和元件12一起被分割成小片,藉由使用如圖所示之寬度較大的黏著膠帶32,即可以一次地剝離。又,由於聚乙烯片材30並不具備由膠劑等所構成的黏著層,而是藉由熱壓接來鋪設於晶圓10的正面10a,因此即使從晶圓10的正面10a剝離聚乙烯片材30,仍然可以抑制金屬圖案剝離或破損而使元件12的品質降低之情形。另外,從晶圓10剝離聚乙烯片材30時,可以藉由對聚乙烯片材30施加些許的加熱或冷卻,而更容易進行剝離。
在上述之實施形態中,雖然作為在片材壓接步驟中熱壓接於晶圓10的正面10a之片材,是從聚烯烴系片材之中選擇了聚乙烯片材30,但是本發明並不限定於此,只要是不具備膠劑等之黏著層也可以藉由熱壓接來鋪設於晶圓10之片材,就可以選擇其他片材。例如,只要是聚烯烴系片材,就也可以選自於聚丙烯(PP)片材、聚苯乙烯(PS)片材之任一者。又,作為不具備膠劑等之黏著層也可以藉由熱壓接來鋪設於晶圓10之片材,也可以從聚酯系
片材來選擇。作為取代本實施形態的聚乙烯片材30而可應用的聚酯系片材,也可以選自於例如聚對苯二甲酸乙二酯(PET)片材、聚萘二甲酸乙二酯(PEN)片材之任一者。
在上述之實施形態中,雖然是將片材壓接步驟中的加熱溫度設定成聚乙烯片材30的熔點附近的120~140℃的範圍,但是本發明並不限定於此,較理想的是因應於熱壓接的片材之種類來設定加熱溫度。例如,選擇了聚丙烯片材來作為聚烯烴系片材的情況下,較理想的是將加熱溫度設定成熔點附近的160~180℃。又,選擇了聚苯乙烯片材來作為聚烯烴系片材的情況下,較理想的是將加熱溫度設定成熔點附近的220~240℃。此外,選擇了聚對苯二甲酸乙二酯片材來作為熱壓接的聚酯系片材的情況下,較理想的是將加熱溫度設定成熔點附近的250~270℃。又,選擇了聚萘二甲酸乙二酯片材來作為聚酯系片材的情況下,較理想的是將加熱溫度設定成熔點附近的220~240℃。此外,該加熱溫度並不限定於各熔點附近的溫度,也可以設定成比該熔點附近的溫度更低50℃左右的溫度範圍的溫度。
10:晶圓
12:元件
14:分割預定線
30:聚乙烯片材
80:環形構件
90:切割裝置
91:主軸單元
92:旋轉主軸
93:切割刀片
94:主軸殼體
95:切割水供給機構
100:分離溝
F:框架
T:切割膠帶
WT:切割水
X:箭頭
Claims (6)
- 一種晶圓的加工方法,是將晶圓分割成一個個的元件之晶圓的加工方法,前述晶圓是在玻璃基板的上表面藉由複數條分割預定線來分隔複數個配設有金屬圖案的元件之晶圓,前述晶圓的加工方法是至少由下述之步驟所構成:片材壓接步驟,將聚烯烴系或聚酯系之在貼附面不具有黏著層的片材鋪設於晶圓的正面並藉由加熱來軟化,以將該片材直接熱壓接於晶圓的正面;晶圓支撐步驟,以切割膠帶來貼附晶圓的背面,並且將環狀的框架貼附於該切割膠帶,前述環狀的框架具有收容晶圓的開口;分割步驟,一邊供給切割水一邊使在外周具備環狀的切割刃之切割刀片旋轉,而沿著晶圓的分割預定線和該片材一起切割,以將該晶圓分割成一個個的元件;及片材剝離步驟,從元件的正面剝離該片材。
- 如請求項1之晶圓的加工方法,其在該晶圓支撐步驟中配設環形構件,形成以水覆蓋晶圓的正面用的水池,前述環形構件會形成圍繞晶圓之環狀的側壁,在該分割步驟中,將切割水充滿該水池並使晶圓沒入於水中。
- 如請求項1之晶圓的加工方法,其中該聚烯烴系的片材是選自於聚乙烯片材、聚丙烯片材、聚苯乙烯片材之任一者。
- 如請求項3之晶圓的加工方法,其中在該 片材壓接步驟中,選擇了該聚乙烯片材的情況之加熱溫度為120~140℃,選擇了該聚丙烯片材的情況之加熱溫度為160~180℃,選擇了該聚苯乙烯片材的情況之加熱溫度為220~240℃。
- 如請求項1之晶圓的加工方法,其中該聚酯系的片材是選自於聚對苯二甲酸乙二酯片材、聚萘二甲酸乙二酯片材之任一者。
- 如請求項5之晶圓的加工方法,其中在該片材壓接步驟中,選擇了該聚對苯二甲酸乙二酯片材的情況之加熱溫度為250~270℃,選擇了該聚萘二甲酸乙二酯片材的情況之加熱溫度為160~180℃。
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