JP2019176475A - バルク超音波（ｂａｗ）共振器 - Google Patents

バルク超音波（ｂａｗ）共振器 Download PDF

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Publication number
JP2019176475A
JP2019176475A JP2019058733A JP2019058733A JP2019176475A JP 2019176475 A JP2019176475 A JP 2019176475A JP 2019058733 A JP2019058733 A JP 2019058733A JP 2019058733 A JP2019058733 A JP 2019058733A JP 2019176475 A JP2019176475 A JP 2019176475A
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layer
piezoelectric layer
electrode
coupler
thickness
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Ceased
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JP2019058733A
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Japanese (ja)
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JP2019176475A5 (https=
Inventor
ジョティ・スワロープ・サドゥー
Swaroop Sadhu Jyothi
ゲルノート・ファティンガー
Fattinger Gernot
ロベルト・アイグナー
Aigner Robert
ミヒャエル・シェーファー
Schaefer Michael
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Qorvo US Inc
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Qorvo US Inc
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Publication of JP2019176475A publication Critical patent/JP2019176475A/ja
Publication of JP2019176475A5 publication Critical patent/JP2019176475A5/ja
Priority to JP2023219116A priority Critical patent/JP7678869B2/ja
Priority to JP2025076565A priority patent/JP7833595B2/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02062—Details relating to the vibration mode
    • H03H9/02078—Details relating to the vibration mode the vibration mode being overmoded
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2019058733A 2018-03-28 2019-03-26 バルク超音波（ｂａｗ）共振器 Ceased JP2019176475A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023219116A JP7678869B2 (ja) 2018-03-28 2023-12-26 バルク超音波（ｂａｗ）共振器
JP2025076565A JP7833595B2 (ja) 2018-03-28 2025-05-02 バルク超音波（ｂａｗ）共振器

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862649343P 2018-03-28 2018-03-28
US62/649,343 2018-03-28
US16/290,175 US11152913B2 (en) 2018-03-28 2019-03-01 Bulk acoustic wave (BAW) resonator
US16/290,175 2019-03-01

Related Child Applications (1)

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JP2023219116A Division JP7678869B2 (ja) 2018-03-28 2023-12-26 バルク超音波（ｂａｗ）共振器

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JP2019176475A true JP2019176475A (ja) 2019-10-10
JP2019176475A5 JP2019176475A5 (https=) 2022-02-16

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JP2019058733A Ceased JP2019176475A (ja) 2018-03-28 2019-03-26 バルク超音波（ｂａｗ）共振器
JP2023219116A Active JP7678869B2 (ja) 2018-03-28 2023-12-26 バルク超音波（ｂａｗ）共振器
JP2025076565A Active JP7833595B2 (ja) 2018-03-28 2025-05-02 バルク超音波（ｂａｗ）共振器

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JP2023219116A Active JP7678869B2 (ja) 2018-03-28 2023-12-26 バルク超音波（ｂａｗ）共振器
JP2025076565A Active JP7833595B2 (ja) 2018-03-28 2025-05-02 バルク超音波（ｂａｗ）共振器

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Country Link
US (1) US11152913B2 (https=)
JP (3) JP2019176475A (https=)
KR (2) KR102848182B1 (https=)
CN (2) CN120377860A (https=)

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WO2021172432A1 (ja) * 2020-02-28 2021-09-02 学校法人早稲田大学 圧電素子
JP2022183461A (ja) * 2021-05-31 2022-12-13 太陽誘電株式会社 ラダー型フィルタおよびマルチプレクサ

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US12562713B2 (en) * 2023-02-03 2026-02-24 Qorvo Us, Inc. Acoustic resonator structure with improved temperature coefficient of frequency (TCF)
CN116169972B (zh) * 2023-02-10 2026-04-24 武汉敏声新技术有限公司 谐振器的制作方法及谐振器
WO2024187579A1 (zh) * 2023-03-10 2024-09-19 中国科学院上海微系统与信息技术研究所 体声波谐振器及其制备方法
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US20250141425A1 (en) * 2023-10-30 2025-05-01 Avago Technologies International Sales Pte. Limited Acoustic resonator devices operating at high-order modes
CN118249774B (zh) * 2024-05-21 2024-09-20 河源市艾佛光通科技有限公司 一种体声波谐振器及其制备方法
CN119582788B (zh) * 2025-02-08 2025-06-06 深圳新声半导体有限公司 一种用于体声波滤波器的制作方法以及体声波滤波器

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