WO2014064987A1 - フィルタ装置 - Google Patents
フィルタ装置 Download PDFInfo
- Publication number
- WO2014064987A1 WO2014064987A1 PCT/JP2013/071551 JP2013071551W WO2014064987A1 WO 2014064987 A1 WO2014064987 A1 WO 2014064987A1 JP 2013071551 W JP2013071551 W JP 2013071551W WO 2014064987 A1 WO2014064987 A1 WO 2014064987A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- inductance
- parallel resonant
- circuit
- filter
- filter device
- Prior art date
Links
- 238000010897 surface acoustic wave method Methods 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 11
- 230000001965 increasing effect Effects 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 33
- 230000008878 coupling Effects 0.000 description 14
- 238000010168 coupling process Methods 0.000 description 14
- 238000005859 coupling reaction Methods 0.000 description 14
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 230000004907 flux Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/09—Filters comprising mutual inductance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
- H03H7/1775—Parallel LC in shunt or branch path
Definitions
- the present invention relates to a band-pass filter device, and more particularly to a filter device using an LC parallel resonant circuit and an acoustic wave resonator.
- Patent Document 1 discloses a bandpass filter device capable of widening the passband.
- a high-pass filter circuit and a low-pass filter circuit are connected in series.
- the high-pass filter circuit includes a high-pass surface acoustic wave resonator and a high-pass inductance element connected in parallel to the high-pass surface acoustic wave resonator.
- the low-pass filter circuit has a first surface acoustic wave resonator that is disposed on the series arm and has one end connected to the end of the high-pass filter circuit.
- a second surface acoustic wave resonator is connected between the one end of the first surface acoustic wave resonator and the ground potential, and a low-pass inductance element is connected in parallel to the second surface acoustic wave resonator. Yes. Further, a second surface acoustic wave resonator is connected between the other end of the first surface acoustic wave resonator and the ground potential. A low-pass inductance element is also connected in parallel to the second surface acoustic wave resonator.
- Patent Document 2 discloses a SAW filter having a wide pass band in the digital terrestrial TV radio wave band.
- two series arm resonators are provided on a series arm connecting an input end and an output end. Between the two series arm resonators, a resonance frequency / anti-resonance frequency moving inductance is connected in series with the two series arm resonators.
- a parallel arm resonator is arranged on the parallel arm connecting the input terminal and the ground potential.
- An inductance element is connected in parallel to the parallel arm resonator.
- a parallel arm resonator is also provided in the parallel arm connecting the output terminal and the ground potential.
- An inductance element is also connected in parallel to this parallel arm resonator.
- the inductance element connected to the parallel arm resonator is provided to move the resonance frequency and antiresonance frequency of the parallel arm resonator.
- a line connecting an input terminal and an output terminal in other words, a surface acoustic wave resonator arranged in a series arm, or a parallel arm connecting a line and a ground potential.
- the resonance frequency or anti-resonance frequency of the surface acoustic wave resonator disposed in the can be adjusted. As a result, the bandwidth is broadened and the attenuation characteristics are improved.
- the low-frequency and high-frequency attenuation poles are configured by the resonance frequency of the parallel arm resonator and the anti-resonance frequency of the series arm resonator. Therefore, in order to increase the bandwidth, it is only necessary to keep both of them apart.
- the frequency difference between the low-frequency attenuation pole and the high-frequency attenuation pole is increased, there is a problem that the attenuation amount at the center of the passband increases. Therefore, there was a limit to widening the bandwidth.
- the ladder type filter device has a problem that the attenuation in the attenuation band far from the attenuation pole is not sufficiently large.
- An object of the present invention is to provide a filter device that can further increase the bandwidth and can sufficiently increase the attenuation in an attenuation region away from the passband.
- the filter device has an input terminal and an output terminal, and is connected between a line connecting the input terminal and the output terminal, and between the line and a ground potential, and a first inductance is provided.
- a first LC parallel resonant circuit including the second LC parallel resonant circuit connected between the line and a ground potential and including a second inductance; and the line of the first LC parallel resonant circuit.
- at least one elastic wave resonator connected between the end portion on the side and the end portion on the line side of the second LC parallel resonant circuit, and the at least one elastic wave resonator.
- the first and second LC parallel resonant circuits are electrically coupled with each other by the capacitance of the first and second LC parallel resonant circuits and the at least one acoustic wave resonator.
- L And attenuation-frequency characteristic of the filter are combined with attenuation-frequency characteristic composed of anti-resonance point of the acoustic wave resonator.
- an input terminal and an output terminal a line connected to the input terminal and the output terminal, and connected between the line and a ground potential
- a first LC parallel resonant circuit including a first inductance and having a first parallel resonant frequency; connected between the line and a ground potential; and including a second inductance and a second parallel resonant
- a second LC parallel resonant circuit having a frequency, the line-side end of the first LC parallel resonant circuit, and the line-side end of the second LC parallel resonant circuit.
- a filter circuit including at least one elastic wave resonator.
- the first resonance characteristic of the first LC parallel resonance circuit, the second resonance characteristic of the second LC parallel resonance circuit, and the capacitance of the at least one acoustic wave resonator are electrically coupled to form a passband characteristic as an LC filter.
- the pass band of the LC filter is disposed in a frequency region that is lower than or higher than the anti-resonance frequency of the at least one elastic wave resonator, and the first parallel resonance frequency is within the pass band of the LC filter.
- the second parallel resonance frequency is arranged, and an attenuation pole of a filter circuit including the at least one elastic wave resonator is arranged in an attenuation region outside the pass band of the LC filter.
- the first inductance in the first LC parallel resonant circuit and the second inductance in the second LC parallel resonant circuit are magnetically coupled. .
- a plurality of at least one acoustic wave resonator connected between the first LC parallel resonant circuit and the second LC parallel resonant circuit are provided.
- the plurality of acoustic wave resonators constitute a ladder type filter circuit.
- the first and second LC parallel resonant circuits are in parallel with the first and second inductances and the first and second inductances, respectively.
- the second and third elastic wave resonators are connected to each other, and the capacitance of the first and second LC parallel resonant circuits is configured by the capacitance of the second and third elastic wave resonators. Yes.
- a circuit in which a first inductance of the first LC parallel resonant circuit and a second inductance of the second LC parallel resonant circuit are magnetically coupled is constituted by a ⁇ -type circuit having the first inductance and the second inductance, and a third inductance connecting each end of the first inductance and the second inductance.
- the first inductance of the first LC parallel resonant circuit and the second inductance of the second LC parallel resonant circuit are magnetically coupled.
- a circuit portion is connected to a common inductance that serves as both the first inductance and the second inductance, and a connection point between an end of the common inductance opposite to the ground potential and the input terminal.
- the three-element Y-type circuit has an inductance and a fifth inductance connected between the connection point and the output terminal.
- the first inductance and the second inductance in the first and second LC parallel resonant circuits are divided in series into a plurality of inductances.
- the first and second capacitors are connected in series, respectively. It consists of a plurality of elastic wave resonators.
- a sixth inductance is connected between the ground potential side end of at least one LC parallel resonant circuit of the first and second LC parallel resonant circuits, and the ground potential.
- a surface acoustic wave resonator can be suitably used as the elastic wave resonator.
- the acoustic wave resonator may be a resonator using a bulk acoustic wave.
- a boundary acoustic wave resonator using a boundary acoustic wave may be used.
- a wide pass band can be obtained, and the attenuation in the attenuation band far from the pass band can be sufficiently increased. Furthermore, the attenuation in the vicinity of the pass band can be made sufficiently large.
- FIG. 1A and FIG. 1B are a schematic plan view showing a circuit diagram of a filter device and an electrode structure of a surface acoustic wave resonator according to the first embodiment of the present invention.
- FIG. 2A is a schematic block diagram of the filter device according to the first embodiment
- FIG. 2B is a schematic block diagram when the filter device of the embodiment operates as an LC filter
- FIG. ) Is a schematic block diagram in the case of operating as an acoustic wave resonator disposed on a line connecting the input and output terminals of the filter device of the embodiment.
- FIG. 1A and FIG. 1B are a schematic plan view showing a circuit diagram of a filter device and an electrode structure of a surface acoustic wave resonator according to the first embodiment of the present invention.
- FIG. 2A is a schematic block diagram of the filter device according to the first embodiment
- FIG. 2B is a schematic block diagram when the filter device of the embodiment operates as an LC filter
- FIG. 2A (a) is a diagram showing the attenuation frequency characteristics of a conventional LC filter when the acoustic wave resonator 21 is a capacitor, and the attenuation frequency characteristics of the acoustic wave resonator.
- FIG. 2A (b) It is a figure which shows the attenuation amount frequency characteristic of the filter apparatus of 1st Embodiment.
- FIG. 2A (c) is a diagram illustrating attenuation frequency characteristics when the filter device of the first embodiment is negatively magnetically coupled.
- FIG. 3 is a circuit diagram of a filter device according to the second embodiment of the present invention.
- FIG. 4 is a circuit diagram of a filter device according to the third embodiment of the present invention.
- FIG. 5A is a diagram for explaining the attenuation frequency characteristics of the ladder type circuit portion and the LC filter portion
- FIG. 5B is a diagram showing the attenuation frequency characteristics of the filter device of the third embodiment
- FIG. 5 (c) is a diagram showing the attenuation frequency characteristic of the filter device when positive magnetic coupling is performed in the third embodiment
- FIG. 5 (d) is a negative graph in the third embodiment. It is a figure which shows the attenuation amount frequency characteristic of the filter apparatus at the time of carrying out magnetic coupling.
- FIG. 6 is a circuit diagram of a filter device according to the fourth embodiment of the present invention.
- FIG. 7 is a circuit diagram of a filter device according to a modification of the third embodiment of the present invention.
- FIG. 8 is a diagram showing attenuation frequency characteristics of the modification shown in FIG.
- FIG. 9 is a circuit diagram of a filter device according to the fifth embodiment of the present invention.
- FIG. 10 is a circuit diagram of a filter device according to the sixth embodiment of the present invention.
- FIG. 11 is a circuit diagram of a filter device according to the seventh embodiment of the present invention.
- FIG. 12 is a circuit diagram of a filter device according to the eighth embodiment of the present invention.
- FIG. 13 is a circuit diagram of a filter device according to the ninth embodiment of the present invention.
- FIG. 14 is a circuit diagram of a filter device according to the tenth embodiment of the present invention.
- FIG. 1A is a circuit diagram of a filter device according to the first embodiment of the present invention.
- the filter device 1 has an input terminal 2 and an output terminal 3.
- a first LC parallel resonant circuit 7 is connected between a connection point 5 between the input terminal 2 and the acoustic wave resonator 21 and a ground potential.
- the first LC parallel resonant circuit 7 has an inductance L1 and a capacitor C1 connected in parallel to the inductance L1.
- a second LC parallel resonant circuit 9 is connected between the connection point 6 between the output terminal 3 and the acoustic wave resonator 21 and the ground potential.
- the second LC parallel resonant circuit 9 has an inductance L2 and a capacitor C2 connected in parallel to the inductance L2.
- An acoustic wave resonator 21 is connected between the end of the first LC parallel resonant circuit 7 on the input terminal 2 side and the end of the second LC parallel resonant circuit 9 on the output terminal 3 side, and the filter circuit is Is formed.
- one elastic wave resonator 21 is connected.
- the resonance points of the first and second LC parallel resonator circuits are arranged near the center frequency of the pass band of the filter device 1.
- connection mode of the plurality of acoustic wave resonators is not particularly limited.
- the elastic wave resonator 21 is a surface acoustic wave resonator.
- FIG. 1B schematically shows the electrode structure of the acoustic wave resonator 21 made of a surface acoustic wave resonator.
- the acoustic wave resonator 21 includes an IDT electrode 22 and reflectors 23 and 24 disposed on both sides of the IDT electrode 22 in the surface acoustic wave propagation direction.
- the electrode structure of the acoustic wave resonator 21 is not particularly limited, but such a normal 1-port surface acoustic wave resonator can be suitably used.
- the reflectors 23 and 24 can be omitted according to the characteristic requirements for the 1-port surface acoustic wave resonator.
- the inductance L1 and the inductance L2 are magnetically coupled as shown by a broken line M in FIG.
- the magnetic coupling is equivalent to a circuit in which an inductance due to magnetic coupling is connected to a line connected to the input terminal 2 and the output terminal 3. That is, this equivalent circuit inductance is equivalent to a circuit connected in parallel with the acoustic wave resonator 21. Therefore, in a frequency region where the acoustic wave resonator 21 operates mainly as a capacitive element due to magnetic coupling, the circuit becomes equivalent to a circuit constituting an LC parallel resonant circuit.
- the frequency region operating as capacitive is a frequency region other than the resonance frequency and antiresonance frequency of the acoustic wave resonator, and the frequency region between the resonance frequency and antiresonance frequency of the acoustic wave resonator.
- the LC parallel resonance circuit is configured in a frequency region where the acoustic wave resonator 21 operates mainly as a capacitive element, a broken line A1 in FIG. 5C and a broken line A2 in FIG.
- an attenuation pole due to the resonance frequency by the LC parallel resonance circuit can be formed in the attenuation region away from the passband. Therefore, it is possible to further increase the attenuation in the attenuation region away from the passband.
- the filter device 1 of the present invention it is possible to increase the bandwidth, expand the attenuation near the pass band, and expand the attenuation in the attenuation band away from the pass band. .
- FIG. 2A is a schematic block diagram of the filter device according to the first embodiment shown in FIG.
- a first LC parallel resonant circuit 7 is connected between a line connecting the input terminal 2 and the output terminal 3 and the ground potential.
- a second LC parallel resonance circuit 9 is connected between the line connecting the input terminal 2 and the output terminal 3 and the ground potential. It will be.
- the elastic wave resonator 21 is connected between connection points where the first LC parallel resonant circuit 7 and the second LC parallel resonant circuit 9 are connected to the line.
- the frequency characteristic of the acoustic wave resonator 21 is mainly inductive in the frequency region between the resonance frequency and the anti-resonance frequency, and mainly in the frequency region lower than the resonance frequency and higher than the anti-resonance frequency. Shows capacity. Therefore, the block diagram of the filter device 1 corresponds to FIG. 2B in the frequency region in which the acoustic wave resonator 21 exhibits capacitance. That is, in the frequency region where the acoustic wave resonator 21 is mainly capacitive, an LC filter is configured in which the first and second LC parallel resonant circuits 7 and 9 and the capacitor C are connected as shown in the figure. The The solid line in FIG.
- 2A (a) shows the attenuation frequency characteristics of the LC filter.
- a wider pass band can be obtained as compared with a ladder type filter using a plurality of surface acoustic wave resonators. That is, even when the values of inductance and capacitance are adjusted to widen the pass band, the attenuation is unlikely to increase at the center of the pass band.
- the LC filter has a gentle slope of the attenuation characteristic from the passband to the outside of the passband.
- the elastic wave resonator 21 is provided.
- the resonance frequency of the elastic wave resonator 21 is in the pass band of the filter device 1 as described above.
- the anti-resonance frequency is located in a portion where the amount of attenuation is desired to be expanded, more specifically, in an attenuation region higher than the pass band and in the vicinity of the pass band.
- the elastic wave resonator 21 is mainly inductive between the resonance frequency and the anti-resonance frequency.
- the attenuation frequency characteristic indicated by the broken line in FIG. 2A is a characteristic in a frequency region including the resonance frequency and the anti-resonance frequency of the elastic wave resonator 21.
- the elastic wave resonator 21 connected between the input terminal 2 and the output terminal 3 has an anti-resonance frequency indicated by a broken line in FIG. 2A (a), and has a predetermined frequency shown in FIG. 2A (b).
- the attenuation frequency characteristic of the acoustic wave resonator 21 is used as the filter circuit shown in FIG. 2C configured so that the attenuation frequency changes in accordance with the frequency of.
- the characteristic can be made steeper than the attenuation characteristic of the LC filter shown by the solid line in FIG. 2A (a). Therefore, in the filter device 1, as shown in FIG. 2A (b), the attenuation characteristic on the high side of the pass band can be sharpened. Furthermore, it is possible to increase the amount of attenuation in the attenuation region near the passband. This is due to the impedance characteristic of the elastic wave resonator 21 at the antiresonance frequency.
- the acoustic wave resonator 21 is attenuated when the frequency is further away from the anti-resonance frequency forming the attenuation pole. The amount decreases. For this reason, a ladder filter having an acoustic wave resonator has a problem that the attenuation in the attenuation region away from the pass band is not sufficiently reduced.
- the filter characteristics of the LC filter since the filter characteristics of the LC filter are used, it is possible to increase the amount of attenuation in the attenuation region away from the pass band. In the filter characteristics of the LC filter, the attenuation is large in the attenuation region away from the passband. Therefore, in the present embodiment, it is possible to increase the attenuation in the attenuation band far from the pass band.
- the relationship between the minimum signal intensity A in the predetermined frequency band of the filter device and the signal intensity B continuous from A is calculated as 10 Log 10 B / A and becomes a value smaller than ⁇ 3 [dB].
- the frequency region may be a pass band, and the frequency region having a value of ⁇ 3 [dB] or less may be an attenuation band.
- the signal strength can be calculated from the voltage value of the filter device.
- the filter device 1 can expand the wide passband and the attenuation band away from the passband by the LC filter, and can reduce the attenuation near the passband using the acoustic wave resonator 21. It has a configuration that can be expanded. That is, the filter device 1 of the present embodiment has a configuration in which the advantages of both the characteristics of the LC filter and the acoustic wave resonator can be used without being disturbed.
- the anti-resonance frequency fa of the acoustic wave resonator 21 is located on the higher frequency side than the high-frequency side end of the pass band formed by the LC filter.
- the antiresonance frequency fa is set to a position where the attenuation pole is desired to be formed in order to provide the attenuation pole in the vicinity of the end on the high side of the passband do it.
- fa> fh> f0 where fh means the frequency at the end of the passband high band side and f0 means the center frequency of the passband formed by the LC filter
- the anti-resonance frequency fa of the elastic wave resonator 21 is positioned in the attenuation region near the end on the low pass band side. It only has to be. Thereby, the steepness of the attenuation characteristic can be achieved in the attenuation region near the low pass band side. In this case, it is sufficient that the antiresonance frequency fa is lower than fl (frequency at the end of the low pass band side).
- the attenuation pole is outside the passband as shown in FIG. 2A (c). Occurs on the high-frequency side, and the amount of attenuation increases.
- the filter characteristic by magnetic coupling performed in the filter device 1 can be replaced with the filter characteristic of a circuit in which an equivalent inductor is connected in parallel to the filter circuit.
- the attenuation pole generated by the LC parallel resonance of the equivalent inductor and the capacitive property of the acoustic wave resonator is considered to increase the reduction amount on the high frequency side outside the pass band shown in FIG. 2A (c).
- FIG. 3 is a circuit diagram of a filter device according to the second embodiment of the present invention.
- the filter device 51 includes the first LC parallel resonance circuit 7, the second LC parallel resonance circuit 9, and the acoustic wave resonator 21, similarly to the filter device 1 of the first embodiment.
- the difference is that the second and third acoustic wave resonators P1 and P2 are used instead of the capacitors C1 and C2 of the first embodiment.
- the resonance frequencies of the acoustic wave resonators P1 and P2 are on the low pass band side, and the anti-resonance frequency is in the pass band.
- the acoustic wave resonators P1 and P2 and the acoustic wave resonator 21 mainly function as capacitive in the frequency band lower than the resonance frequency and higher than the antiresonance frequency.
- the filter characteristics of the LC filter by the first and second LC parallel resonance circuits 7 and 9 are obtained in a frequency band other than between the resonance frequency and the antiresonance frequency of the elastic wave resonators P1 and P2. It is done.
- filter characteristics by the acoustic wave resonators P1, P2, and 21 can be obtained at the same time. Therefore, similarly to the first embodiment, 1) widening the band, 2) expansion of the attenuation in the vicinity of the pass band, and 3) expansion of the attenuation in the attenuation band away from the pass band can be achieved.
- the inductance L1 and the inductance L2 are magnetically coupled as indicated by an arrow M.
- FIG. 4 is a circuit diagram of a filter device according to the third embodiment of the present invention.
- the first and second LC parallel resonant circuits 7 and 9 are configured in the same manner as in the second embodiment. Therefore, the same parts are denoted by the same reference, and the description thereof is omitted.
- the third embodiment differs from the second embodiment in that a ladder type filter circuit 62 is connected in place of the acoustic wave resonator 21.
- the ladder filter circuit 62 includes a plurality of series arm resonators S11 to S1n (where n is a positive integer) arranged on a series arm connecting the input terminal 2 and the output terminal 3, and parallel arm resonators P11 to P1m. Where m is a positive integer.
- a plurality of elastic wave resonators may be connected between the first LC parallel resonant circuit 7 and the second LC parallel resonant circuit 9, and a plurality of elastic waves as in the present embodiment. It is desirable to configure the ladder filter circuit 62 with a wave resonator.
- the filter characteristics of the LC filter by the first and second LC parallel resonant circuits 7 and 9 are used.
- the solid line in FIG. 2A (a) shows the attenuation frequency characteristics of a conventional LC filter in which the acoustic wave resonator 21 shown in the schematic block diagram of FIG. 2 (a) is a capacitor, and the broken line in FIG.
- the filter characteristics of the ladder type filter circuit 62 are shown.
- FIG. 5B shows the attenuation frequency characteristics of the filter device of the present embodiment including the ladder type filter circuit 62 with a plurality of elastic wave resonators.
- the ladder-type filter circuit 62 since the ladder-type filter circuit 62 is provided, the amount of attenuation in the vicinity of the pass band can be increased. More specifically, the resonance frequency of the parallel arm resonators P11 to P1m of the ladder type filter circuit 62 is matched with the attenuation pole located on the low frequency side outside the pass band of the filter device 61, and the anti-resonance frequency is set to the filter device 61. It is located within the passband. The resonance frequency of the series arm resonators S11 to S1n is positioned on the high band side in the pass band of the filter device 61, and the anti-resonance frequency is the attenuation pole positioned on the high band side outside the pass band.
- the attenuation type frequency characteristic of the ladder filter circuit 62 indicated by the solid line in FIG. 5A has attenuation poles in the frequency band near the low band side end and the high band side end of the pass band of the filter device 61.
- a ladder filter circuit 62 can be obtained.
- the filter device 61 having a small attenuation at the center and a wide pass band can be obtained by using the filter characteristics as an LC filter obtained by the configuration of the LC parallel resonance circuits 7 and 9.
- the filter characteristics of the first and second LC parallel resonant circuits 7 and 9 are combined with the filter characteristics of the ladder type filter circuit 62 having an attenuation pole in a predetermined frequency band.
- the center frequency of the passband shown in FIG. 5B is about 2.6 GHz
- the passband bandwidth is about 200 MHz
- the attenuation is about 2.4 GHz near the lower side of the passband.
- An attenuation frequency characteristic of 30 dB which is about 2.8 GHz near the high band side of the pass band and an attenuation of about 50 dB, is obtained. That is, as shown in FIG. 5B, in this embodiment, 1) widening the band, 2) increasing the attenuation near the pass band, and 3) expanding the attenuation in the attenuation band away from the pass band. Can do.
- Attenuation poles due to magnetic coupling can be arranged on the low-frequency side.
- an attenuation pole due to magnetic coupling is disposed on the high frequency side of the pass band of the filter device as shown by a broken line A2 in FIG. Can do.
- the attenuation outside the pass band can be further expanded by the magnetic coupling attenuation poles arranged on the low band side or the high band side outside the pass band.
- V1 j ⁇ L1I1 + j ⁇ MI2 (Formula 1)
- V2 j ⁇ MI1 + j ⁇ L2I2 (Formula 2)
- FIG. 6 is a circuit diagram of a filter device according to the fourth embodiment of the present invention.
- the filter device 71 includes a first LC parallel resonant circuit 7 connected to the input terminal 2 and a second LC parallel resonant circuit 9 connected to the output terminal 3.
- a ladder filter circuit 72 is connected between the first LC parallel resonance circuit 7 and the second LC parallel resonance circuit 9.
- the ladder filter circuit 72 has a plurality of series arm resonators S21 to S2n (where n is a positive integer) and a plurality of parallel arm resonators P21 to P2m (where m is a positive integer).
- the first LC parallel resonance circuit 7 and the second LC parallel resonance circuit 9 are configured in the same manner as in the third embodiment.
- the ladder type filter circuit 72 is configured in the same manner as the ladder type filter circuit 62.
- the third LC parallel resonant circuit 73 is connected between the connection point n1 between the series arm resonator S22 and the series arm resonator S23 and the ground potential.
- the third LC parallel resonant circuit 73 includes an inductance Lx and an acoustic wave resonator P3 connected in parallel with the inductance Lx.
- the first and second LC parallel resonance circuits 7 and 9 are used to obtain filter characteristics as an LC filter.
- the first and second LC parallel resonant circuits 7 and 9 are connected to the ground potential between the first and second LC parallel resonant circuits 7 and 9.
- Three LC parallel resonant circuits 73 may be connected.
- a low-frequency attenuation pole is configured by the resonance frequency of the parallel arm resonators P21 to P2m of the ladder filter circuit 72. Further, a high-frequency attenuation pole is formed by the antiresonance frequencies of the series arm resonators S21 to S2n.
- the high frequency side attenuation pole is constituted by the resonance frequency of the parallel arm resonators P21 to P2m of the ladder filter circuit 72, and the low frequency side is constituted by the antiresonance frequency of the series arm resonators S21 to S2n.
- the attenuation pole may be configured.
- the inductance L1 and the inductance Lx are magnetically coupled, and further, it is desirable that the inductance Lx and the inductance L2 are magnetically coupled.
- attenuation poles as indicated by the broken line A1 in FIG. 5C and the broken line A2 in FIG. 5D can be formed at a position away from the pass band, and the attenuation at the position away from the pass band. Can be further expanded than when the magnetic coupling is not performed.
- FIG. 7 is a circuit diagram of a modification of the third embodiment.
- a ladder type filter circuit 62A includes series arm resonators S11 to S13 and parallel arm resonators P11 and P12.
- An elastic wave resonator 63 is connected between the input terminal 2 and the first LC parallel resonance circuit 7.
- An elastic wave resonator 64 is also connected between the output terminal 3 and the second LC parallel resonance circuit 9.
- the acoustic wave resonators 63 and 64 have an anti-resonance frequency on the higher frequency side than the passband. As a result, it is possible to increase the amount of attenuation on the high side of the passband. It also has a function of adjusting the impedance of the filter device 61A.
- an inductance L3 is connected between the first LC parallel resonant circuit 7 and the second LC parallel resonant circuit 9.
- the inductance L1 and the inductance L2 are magnetically coupled.
- FIG. 8 is a diagram showing the attenuation frequency characteristics of the filter device 61A of the present modification.
- a filter characteristic used as a filter satisfying the UMTS BAND41 standard is realized.
- the pass band is 2496 to 2690 MHz
- the bands for which a large attenuation is to be secured are 2400 to 2473 MHz in the IMS 2.4 GHz band and 800 to 2170 MHz in the UMTS band.
- the elastic wave resonators 63 and 64 are provided, an attenuation pole appears at a position indicated by an arrow W in FIG. 8, thereby increasing an attenuation amount at a position away from the pass band.
- the impedance of the filter circuit can be adjusted.
- the resonance frequency Fx generated by the resonance between the inductance L1 and the inductance L2 by magnetic coupling, the inductance L3, and the capacitive component of the ladder circuit is at the position indicated by the arrow X. Appears. Accordingly, the amount of attenuation is increased at the position indicated by the arrow X.
- FIG. 9 is a circuit diagram of a filter device according to the fifth embodiment of the present invention.
- the filter device 81 of the fifth embodiment corresponds to a modification of the filter device 61 of the third embodiment.
- the difference from the third embodiment 61 is that the first inductance L1 and the second inductance L2 are connected to the third inductance L3 connected between the first and second LC parallel resonance circuits 7 and 9.
- one end of the third inductance L3 is connected to one end of the inductance L1, and the other end of the inductance L3 is connected to one end of the inductance L2.
- a ⁇ (delta) type circuit is configured.
- the third inductance L3 may be connected. That is, a ⁇ -type circuit equivalent to a circuit in which the first and second inductances L1 and L2 are magnetically coupled may be used.
- FIG. 10 is a circuit diagram showing a filter device according to the sixth embodiment of the present invention.
- the filter device 91 of the present embodiment also corresponds to a modification of the filter device 61 of the third embodiment.
- the first inductance L1 and the second inductance L2 are shared, and the common inductance L0 is used. That is, the first LC parallel resonant circuit 7 is configured by the acoustic wave resonator P1 and the inductance L0, and the second LC parallel resonant circuit 9 is configured by the inductance L0 and the acoustic wave resonator P2. .
- a fourth inductance L4 is connected between the inductance L0 and the input terminal.
- a fifth inductance L5 is connected between one end of the inductance L0 and the output terminal.
- the inductances L0, L4, and L5 constitute a three-element Y-type circuit.
- Such a Y-type circuit is equivalent to a circuit in which the inductances L1 and L2 are magnetically coupled. That is, a Y-type circuit having inductances L0, L4, and L5 may be used instead of the ⁇ -type circuit shown in FIG.
- the filter devices 81 and 91 shown in FIGS. 9 and 10 as in the filter device 61 of the third embodiment, 1) widening, 2) expansion of attenuation near the pass band, and 3) from the pass band.
- the amount of attenuation in a remote attenuation band can be increased.
- the attenuation in the vicinity of the pass band can be further increased as compared with the case where no ⁇ -type circuit or three-element Y-type circuit is formed.
- FIG. 11 to FIG. 14 are circuit diagrams of filter devices according to the seventh to tenth embodiments of the present invention. These filter devices also correspond to modifications of the filter device 61 of the third embodiment shown in FIG. Therefore, only different parts will be described.
- the inductance L1 and the inductance L2 are respectively divided in series. Specifically, the inductance L1 is divided in series, and the inductance L1a and the inductance L1b are connected in series. Similarly, in the second LC parallel resonant circuit 9, inductances L2a and L2b are connected in series.
- the input terminal 2 is connected to a connection point n2 between the inductance L1a and the inductance L1b.
- the output terminal 3 is connected to a connection point n3 between the inductance L2a and the inductance L2b.
- the first and second inductances L1 and L2 may be divided in series.
- the elastic wave resonators in the first and second LC parallel resonant circuits 7 and 9 may be divided in series as in the filter device 111 shown in FIG.
- the acoustic wave resonator P1a and the acoustic wave resonator P1b are connected in series with each other.
- a connection point n4 between the acoustic wave resonators P1a and P1b and the input terminal 2 are connected.
- the elastic wave resonator is divided in series. That is, the elastic wave resonator P2a and the elastic wave resonator P2b are connected in series.
- a connection point n5 between the acoustic wave resonators P2a and P2b and the output terminal 3 are electrically connected.
- an inductance L21 is provided as a sixth inductance L6 between the acoustic wave resonator P1 and the ground potential side end of the inductance L1 and the ground potential. It is connected.
- an inductance L22 is connected as an inductance L6 between the ground potential side ends of the acoustic wave resonator P2 and the inductance L2 and the ground potential.
- the inductances L21 and L22 may be further connected between the ground potential side end of the parallel circuit portion and the ground potential.
- the ground potential side ends of the first LC parallel resonant circuit 7 and the second LC parallel resonant circuit 9 are connected in common.
- An inductance L23 is connected as a sixth inductance L6 between the common connection point n6 and the ground potential. The amount of attenuation in the vicinity of the pass band can be further expanded by connecting the inductance L23.
- the inductance of the first LC parallel resonant circuit 7 and the inductance of the second LC parallel resonant circuit 9 are magnetically coupled, but are not necessarily magnetically coupled. Also good.
- the elastic wave resonators used in the first and second LC parallel resonance circuits 7 and 9 are not limited to the surface acoustic wave resonators, but include boundary acoustic wave resonators or resonators using bulk acoustic waves. May be.
- the capacitor C may be used for Even in such a case, it is possible to increase the attenuation in the vicinity of the pass band by the filter characteristics of the LC filter and at least one elastic wave resonator connected between the first and second LC parallel resonant circuits.
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Filters And Equalizers (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
V2=jωMI1+jωL2I2(式2)
2…入力端子
3…出力端子
5,6…接続点
7…第1のLC並列共振回路
9…第2のLC並列共振回路
21…弾性波共振子
22…IDT電極
23,24…反射器
51,61,61A,71,81,91,101,111,121,131…フィルタ装置
62,62A,72…ラダー型フィルタ回路
63,64…弾性波共振子
73…第3のLC並列共振回路
C1,C2…容量
L1,L1a,L1b…第1のインダクタンス
L2,L2a,L2b…第2のインダクタンス
L3~L6…第3~第6のインダクタンス
L21~L23…インダクタンス
P1,P1a,P1b,P2,P2a,P2b,P3…弾性波共振子
P11~P1m,P21~P2m…並列腕共振子
S11~S1n,S21~S2n…直列腕共振子
Claims (12)
- 入力端子と、
出力端子と、
前記入力端子と前記出力端子とを結ぶ線路と、
前記線路とグラウンド電位との間に接続されており、第1のインダクタンスを含む第1のLC並列共振回路と、
前記線路とグラウンド電位との間に接続されており、第2のインダクタンスを含む第2のLC並列共振回路と、
前記第1のLC並列共振回路の前記線路側の端部と、前記第2のLC並列共振回路の前記線路側の端部との間に接続されている少なくとも1つの弾性波共振子とを備え、
前記少なくとも1つの弾性波共振子の容量性によって前記第1,第2のLC並列共振回路を電気的に結合した構成であり、
前記第1及び第2のLC並列共振回路と前記少なくとも1つの弾性波共振子の容量性によって構成されるLCフィルタとしての減衰量周波数特性と、
前記弾性波共振子の反共振点によって構成される減衰量周波数特性とが組み合わされている、フィルタ装置。 - 入力端子と、
出力端子と、
前記入力端子と前記出力端子とに接続される線路と、
前記線路とグラウンド電位との間に接続されており、第1のインダクタンスを含み、第1の並列共振周波数を有する第1のLC並列共振回路と、
前記線路とグラウンド電位との間に接続されており、第2のインダクタンスを含み、第2の並列共振周波数を有する第2のLC並列共振回路と、
前記第1のLC並列共振回路の前記線路側の端部と、前記第2のLC並列共振回路の前記線路側の端部とに接続されている、少なくとも1つの弾性波共振子を含むフィルタ回路とを備え、
前記第1のLC並列共振回路の第1の共振特性と、
前記第2のLC並列共振回路の第2の共振特性と、
前記少なくとも1つの弾性波共振子の容量性とによって、前記第1及び第2の共振特性を電気的に結合させ、LCフィルタとしての通過帯域特性が構成されており、
前記LCフィルタの通過帯域は、前記少なくとも1つの弾性波共振子の反共振周波数より低いまたは共振周波数より高い周波数領域に配置され、かつ前記LCフィルタの通過帯域内に前記第1の並列共振周波数と前記第2の並列共振周波数が配置されており、
前記少なくとも1つの弾性波共振子を含むフィルタ回路の減衰極が、前記LCフィルタの通過帯域外の減衰域に配置されている、フィルタ装置。 - 前記第1のLC並列共振回路に含まれる第1のインダクタンスと、前記第2のLC並列共振回路に含まれる第2のインダクタンスとが磁気結合している、請求項1または2に記載のフィルタ装置。
- 前記第1のLC並列共振回路と、前記第2のLC並列共振回路との間に接続されている前記少なくとも1つの弾性波共振子が、複数の弾性波共振子であり、該複数の弾性波共振子がラダー型フィルタ回路を構成している、請求項1~3のいずれか1項に記載のフィルタ装置。
- 前記第1及び第2のLC並列共振回路が、それぞれ、前記第1及び第2のインダクタンスと、前記第1及び第2のインダクタンスに並列に接続された第2及び第3の弾性波共振子とからなり、該第2及び第3の弾性波共振子の容量性により前記第1及び第2のLC並列共振回路の容量が構成されている、請求項1~4のいずれか1項に記載のフィルタ装置。
- 前記第1のLC並列共振回路の第1のインダクタンスと、前記第2のLC並列共振回路の第2のインダクタンスとが磁気結合している回路部分が、前記第1のインダクタンスと、前記第2のインダクタンスと、前記第1のインダクタンス及び前記第2のインダクタンスの各一端を接続している第3のインダクタンスとを有するΔ型回路により構成されている、請求項3に記載のフィルタ装置。
- 前記第1のLC並列共振回路の第1のインダクタンスと、前記第2のLC並列共振回路の第2のインダクタンスとが磁気結合している回路部分が、前記第1のインダクタンス及び前記第2のインダクタンスを兼ねている共通インダクタンスと、該共通インダクタンスのグラウンド電位とは反対側の端部と前記入力端子との間の接続点に接続された第4のインダクタンスと、該接続点と前記出力端子との間に接続された第5のインダクタンスとを有する三素子Y型回路により構成されている、請求項3に記載のフィルタ装置。
- 前記第1及び第2のLC並列共振回路における第1のインダクタンス及び第2のインダクタンスが、複数のインダクタンスに直列分割されている、請求項1~7のいずれか1項に記載のフィルタ装置。
- 前記第1のLC並列共振回路及び第2のLC並列共振回路において、前記第1及び第2の容量が、それぞれ、直列に接続された複数の弾性波共振子からなる、請求項1~8のいずれか1項に記載のフィルタ装置。
- 前記第1及び第2のLC並列共振回路のうち少なくとも一方のLC並列共振回路のグラウンド電位側端部と、グラウンド電位との間に、第6のインダクタンスが接続されている、請求項1~9のいずれか1項に記載のフィルタ装置。
- 前記弾性波共振子が、弾性表面波共振子である、請求項1~10のいずれか1項に記載のフィルタ装置。
- 前記弾性波共振子が、バルク弾性波を利用した共振子である、請求項1~10のいずれか1項に記載のフィルタ装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13848772.3A EP2913923A4 (en) | 2012-10-24 | 2013-08-08 | FILTER DEVICE |
KR1020177009678A KR101989458B1 (ko) | 2012-10-24 | 2013-08-08 | 필터장치 |
JP2014543169A JP5896039B2 (ja) | 2012-10-24 | 2013-08-08 | フィルタ装置 |
KR1020157010557A KR20150060881A (ko) | 2012-10-24 | 2013-08-08 | 필터장치 |
CN201380055258.5A CN104737447B (zh) | 2012-10-24 | 2013-08-08 | 滤波器装置 |
US14/682,184 US9509279B2 (en) | 2012-10-24 | 2015-04-09 | Elastic wave filter with magnetically coupled LC parallel resonance circuits |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-234960 | 2012-10-24 | ||
JP2012234960 | 2012-10-24 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/682,184 Continuation US9509279B2 (en) | 2012-10-24 | 2015-04-09 | Elastic wave filter with magnetically coupled LC parallel resonance circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014064987A1 true WO2014064987A1 (ja) | 2014-05-01 |
Family
ID=50544368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/071551 WO2014064987A1 (ja) | 2012-10-24 | 2013-08-08 | フィルタ装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9509279B2 (ja) |
EP (1) | EP2913923A4 (ja) |
JP (1) | JP5896039B2 (ja) |
KR (2) | KR101989458B1 (ja) |
CN (1) | CN104737447B (ja) |
WO (1) | WO2014064987A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016000873A1 (en) * | 2014-06-30 | 2016-01-07 | Epcos Ag | Rf filter circuit, rf filter with improved attenuation and duplexer with improved isolation |
JP2017135445A (ja) * | 2016-01-25 | 2017-08-03 | Tdk株式会社 | バンドパスフィルタおよび分波器 |
WO2018159205A1 (ja) * | 2017-02-28 | 2018-09-07 | 株式会社村田製作所 | フィルタ装置、マルチプレクサ、高周波フロントエンド回路および通信装置 |
KR20190039002A (ko) | 2017-10-02 | 2019-04-10 | 가부시키가이샤 무라타 세이사쿠쇼 | 필터 |
CN109672422A (zh) * | 2019-02-22 | 2019-04-23 | 安徽安努奇科技有限公司 | 滤波电路和多工器 |
US11595014B2 (en) | 2018-12-28 | 2023-02-28 | Murata Manufacturing Co., Ltd. | Filter circuit and filter device |
WO2024106269A1 (ja) * | 2022-11-15 | 2024-05-23 | 京セラ株式会社 | フィルタ、モジュール及び通信装置 |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012112571B3 (de) * | 2012-12-18 | 2014-06-05 | Epcos Ag | Schaltungsanordnung |
US9837984B2 (en) | 2014-12-24 | 2017-12-05 | Qorvo Us, Inc. | RF ladder filter with simplified acoustic RF resonator parallel capacitance compensation |
US9698756B2 (en) | 2014-12-24 | 2017-07-04 | Qorvo Us, Inc. | Acoustic RF resonator parallel capacitance compensation |
JP6531824B2 (ja) * | 2015-04-17 | 2019-06-19 | 株式会社村田製作所 | 共振回路、帯域阻止フィルタおよび帯域通過フィルタ |
US10097161B2 (en) | 2015-09-25 | 2018-10-09 | Qorvo Us, Inc. | Compensation circuit for acoustic resonators |
US9847769B2 (en) | 2015-09-25 | 2017-12-19 | Qorvo Us, Inc. | Tunable compensation circuit for filter circuitry using acoustic resonators |
US9762208B2 (en) | 2015-09-30 | 2017-09-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Very wide bandwidth composite bandpass filter with steep roll-off |
US9893713B2 (en) | 2015-09-30 | 2018-02-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Wide bandwidth muliplexer based on LC and acoustic resonator circuits for performing carrier aggregation |
US10263599B2 (en) * | 2015-12-21 | 2019-04-16 | Qorvo Us, Inc. | Bulk acoustic wave (BAW) filter with coupled inductors |
US10243537B2 (en) | 2016-01-12 | 2019-03-26 | Qorvo Us, Inc. | Compensation circuit for use with acoustic resonators to provide a bandstop |
CN109075771B (zh) * | 2016-04-08 | 2022-08-16 | 谐振公司 | 射频滤波器,高选择性三工器和通信设备 |
US10141644B2 (en) | 2016-04-18 | 2018-11-27 | Qorvo Us, Inc. | Acoustic filter for antennas |
US10581156B2 (en) | 2016-05-04 | 2020-03-03 | Qorvo Us, Inc. | Compensation circuit to mitigate antenna-to-antenna coupling |
US10581403B2 (en) | 2016-07-11 | 2020-03-03 | Qorvo Us, Inc. | Device having a titanium-alloyed surface |
WO2018047862A1 (ja) * | 2016-09-07 | 2018-03-15 | 株式会社村田製作所 | 弾性波フィルタ装置及び複合フィルタ装置 |
US11050412B2 (en) | 2016-09-09 | 2021-06-29 | Qorvo Us, Inc. | Acoustic filter using acoustic coupling |
US10284174B2 (en) | 2016-09-15 | 2019-05-07 | Qorvo Us, Inc. | Acoustic filter employing inductive coupling |
US10367470B2 (en) | 2016-10-19 | 2019-07-30 | Qorvo Us, Inc. | Wafer-level-packaged BAW devices with surface mount connection structures |
WO2018096799A1 (ja) * | 2016-11-22 | 2018-05-31 | 株式会社村田製作所 | フィルタ装置およびマルチプレクサ |
US11165412B2 (en) | 2017-01-30 | 2021-11-02 | Qorvo Us, Inc. | Zero-output coupled resonator filter and related radio frequency filter circuit |
US11165413B2 (en) | 2017-01-30 | 2021-11-02 | Qorvo Us, Inc. | Coupled resonator structure |
JP6907680B2 (ja) * | 2017-04-26 | 2021-07-21 | Tdk株式会社 | ローパスフィルタ |
US10873318B2 (en) | 2017-06-08 | 2020-12-22 | Qorvo Us, Inc. | Filter circuits having acoustic wave resonators in a transversal configuration |
DE102017113152B3 (de) * | 2017-06-14 | 2018-10-11 | RF360 Europe GmbH | Elektroakustisches HF-Filter mit einer erhöhten Flankensteilheit, Multiplexer und Verfahren zum Auslegen eines elektroakustischen HF-Filters |
JP6708177B2 (ja) * | 2017-07-21 | 2020-06-10 | 株式会社村田製作所 | 高周波フィルタ、マルチプレクサ、高周波フロントエンド回路および通信装置 |
CN117060880A (zh) * | 2017-07-25 | 2023-11-14 | 株式会社村田制作所 | 高频滤波器、多工器、高频前端电路以及通信装置 |
US10931263B2 (en) * | 2017-08-03 | 2021-02-23 | Qorvo Us, Inc. | Filter circuits having a resonator-based filter and a magnetically-coupled filter |
US10141907B1 (en) * | 2017-08-25 | 2018-11-27 | Psemi Corporation | Integrated BPF and LNA input match |
US10361676B2 (en) | 2017-09-29 | 2019-07-23 | Qorvo Us, Inc. | Baw filter structure with internal electrostatic shielding |
DE102017129473A1 (de) * | 2017-12-11 | 2019-06-13 | RF360 Europe GmbH | Breitbandiges HF-Filter, Multiband-HF-Filter und HF-Filterbauelement |
US11152913B2 (en) | 2018-03-28 | 2021-10-19 | Qorvo Us, Inc. | Bulk acoustic wave (BAW) resonator |
KR20190122493A (ko) * | 2018-04-20 | 2019-10-30 | 삼성전기주식회사 | 하이 패스 필터 |
DE102019210493A1 (de) | 2018-07-18 | 2020-01-23 | Skyworks Solutions, Inc. | Hybrides akustisches lc-filter kaskadiert mit lc-filter |
CN110071702B (zh) * | 2019-02-19 | 2023-04-07 | 天津大学 | 一种带通滤波器及双工器 |
JP7232083B2 (ja) * | 2019-03-05 | 2023-03-02 | 太陽誘電株式会社 | フィルタ |
US11146247B2 (en) | 2019-07-25 | 2021-10-12 | Qorvo Us, Inc. | Stacked crystal filter structures |
CN111600574B (zh) * | 2019-08-30 | 2023-10-03 | 天津大学 | 一种体声波滤波器及其带外抑制改善方法 |
US20220337223A1 (en) * | 2019-10-07 | 2022-10-20 | Intel Corporation | Hybrid resonators |
US11757430B2 (en) | 2020-01-07 | 2023-09-12 | Qorvo Us, Inc. | Acoustic filter circuit for noise suppression outside resonance frequency |
US11146246B2 (en) | 2020-01-13 | 2021-10-12 | Qorvo Us, Inc. | Phase shift structures for acoustic resonators |
US11146245B2 (en) | 2020-01-13 | 2021-10-12 | Qorvo Us, Inc. | Mode suppression in acoustic resonators |
CN111200418B (zh) * | 2020-01-15 | 2021-01-08 | 诺思(天津)微系统有限责任公司 | 体声波滤波器和信号处理设备 |
CN111200419B (zh) * | 2020-01-16 | 2021-08-10 | 诺思(天津)微系统有限责任公司 | 一种滤波器、双工器、高频前端电路及通信装置 |
US11632097B2 (en) | 2020-11-04 | 2023-04-18 | Qorvo Us, Inc. | Coupled resonator filter device |
US11575363B2 (en) | 2021-01-19 | 2023-02-07 | Qorvo Us, Inc. | Hybrid bulk acoustic wave filter |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62216515A (ja) * | 1986-03-18 | 1987-09-24 | Toshiba Corp | バンドパスフイルタ |
JPS6318709A (ja) * | 1986-07-09 | 1988-01-26 | Matsushita Electric Ind Co Ltd | Lcバンドパスフイルタ |
JP2004007250A (ja) * | 2002-05-31 | 2004-01-08 | Tdk Corp | 弾性表面波フィルタ素子、弾性表面波フィルタ素子用ベース基板及び弾性表面波フィルタ素子を備える弾性表面波装置 |
JP2007202136A (ja) | 2005-12-26 | 2007-08-09 | Nippon Dempa Kogyo Co Ltd | Sawフィルタ及び携帯端末 |
JP2009218756A (ja) * | 2008-03-07 | 2009-09-24 | Ngk Spark Plug Co Ltd | 積層型バンドパスフィルタ |
JP2011234191A (ja) | 2010-04-28 | 2011-11-17 | Kyocera Kinseki Corp | バンドパスフィルタ装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156414A (en) * | 1979-05-25 | 1980-12-05 | Matsushita Electric Ind Co Ltd | Band pass filter |
JPH04284606A (ja) * | 1991-03-13 | 1992-10-09 | Tdk Corp | フィルタ素子 |
JPH06350374A (ja) * | 1993-06-10 | 1994-12-22 | Uniden Corp | 帯域通過フィルタ |
JP3887037B2 (ja) * | 1996-05-27 | 2007-02-28 | 株式会社東芝 | 弾性表面波フィルタ装置 |
JP2003243966A (ja) * | 2001-12-14 | 2003-08-29 | Mitsubishi Electric Corp | フィルタ回路 |
EP1455448B1 (en) * | 2001-12-14 | 2008-09-24 | Mitsubishi Electric Corporation | Filter circuitry |
US7262674B2 (en) * | 2005-06-15 | 2007-08-28 | Intel Corporation | Bandpass filter having first and second serially coupled collection of filter components for providing upper and lower rejection notches |
JP2007074698A (ja) * | 2005-08-08 | 2007-03-22 | Fujitsu Media Device Kk | 分波器及びラダー型フィルタ |
JP2008312146A (ja) | 2007-06-18 | 2008-12-25 | Sharp Corp | 帯域阻止フィルタ及びそれを備えた受信チューナ |
CN101771394A (zh) * | 2010-02-05 | 2010-07-07 | 无锡市好达电子有限公司 | 超晶格晶体谐振器及其作为超晶格晶体滤波器的用途 |
JP5901101B2 (ja) * | 2010-02-25 | 2016-04-06 | 太陽誘電株式会社 | フィルタ、デュープレクサ、通信モジュール、通信装置 |
-
2013
- 2013-08-08 JP JP2014543169A patent/JP5896039B2/ja active Active
- 2013-08-08 KR KR1020177009678A patent/KR101989458B1/ko active IP Right Grant
- 2013-08-08 WO PCT/JP2013/071551 patent/WO2014064987A1/ja active Application Filing
- 2013-08-08 EP EP13848772.3A patent/EP2913923A4/en active Pending
- 2013-08-08 CN CN201380055258.5A patent/CN104737447B/zh active Active
- 2013-08-08 KR KR1020157010557A patent/KR20150060881A/ko active Search and Examination
-
2015
- 2015-04-09 US US14/682,184 patent/US9509279B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62216515A (ja) * | 1986-03-18 | 1987-09-24 | Toshiba Corp | バンドパスフイルタ |
JPS6318709A (ja) * | 1986-07-09 | 1988-01-26 | Matsushita Electric Ind Co Ltd | Lcバンドパスフイルタ |
JP2004007250A (ja) * | 2002-05-31 | 2004-01-08 | Tdk Corp | 弾性表面波フィルタ素子、弾性表面波フィルタ素子用ベース基板及び弾性表面波フィルタ素子を備える弾性表面波装置 |
JP2007202136A (ja) | 2005-12-26 | 2007-08-09 | Nippon Dempa Kogyo Co Ltd | Sawフィルタ及び携帯端末 |
JP2009218756A (ja) * | 2008-03-07 | 2009-09-24 | Ngk Spark Plug Co Ltd | 積層型バンドパスフィルタ |
JP2011234191A (ja) | 2010-04-28 | 2011-11-17 | Kyocera Kinseki Corp | バンドパスフィルタ装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2913923A4 * |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016000873A1 (en) * | 2014-06-30 | 2016-01-07 | Epcos Ag | Rf filter circuit, rf filter with improved attenuation and duplexer with improved isolation |
US9577302B2 (en) | 2014-06-30 | 2017-02-21 | Epcos Ag | RF filter circuit, RF filter with improved attenuation and duplexer with improved isolation |
JP2017135445A (ja) * | 2016-01-25 | 2017-08-03 | Tdk株式会社 | バンドパスフィルタおよび分波器 |
WO2018159205A1 (ja) * | 2017-02-28 | 2018-09-07 | 株式会社村田製作所 | フィルタ装置、マルチプレクサ、高周波フロントエンド回路および通信装置 |
US11146242B2 (en) | 2017-02-28 | 2021-10-12 | Murata Manufacturing Co., Ltd. | Filter device, multiplexer, radio frequency front end circuit, and communication device |
KR20190039002A (ko) | 2017-10-02 | 2019-04-10 | 가부시키가이샤 무라타 세이사쿠쇼 | 필터 |
US10742194B2 (en) | 2017-10-02 | 2020-08-11 | Murata Manufacturing Co., Ltd. | Filter |
US11595014B2 (en) | 2018-12-28 | 2023-02-28 | Murata Manufacturing Co., Ltd. | Filter circuit and filter device |
CN109672422A (zh) * | 2019-02-22 | 2019-04-23 | 安徽安努奇科技有限公司 | 滤波电路和多工器 |
CN109672422B (zh) * | 2019-02-22 | 2023-08-25 | 安徽安努奇科技有限公司 | 滤波电路和多工器 |
WO2024106269A1 (ja) * | 2022-11-15 | 2024-05-23 | 京セラ株式会社 | フィルタ、モジュール及び通信装置 |
Also Published As
Publication number | Publication date |
---|---|
CN104737447B (zh) | 2017-08-11 |
EP2913923A1 (en) | 2015-09-02 |
JP5896039B2 (ja) | 2016-03-30 |
US9509279B2 (en) | 2016-11-29 |
CN104737447A (zh) | 2015-06-24 |
KR20150060881A (ko) | 2015-06-03 |
EP2913923A4 (en) | 2016-06-01 |
KR20170043666A (ko) | 2017-04-21 |
US20150222246A1 (en) | 2015-08-06 |
KR101989458B1 (ko) | 2019-09-30 |
JPWO2014064987A1 (ja) | 2016-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5896039B2 (ja) | フィルタ装置 | |
JP4697229B2 (ja) | 弾性波フィルタ装置 | |
US10211799B2 (en) | High-frequency filter | |
US9419585B2 (en) | Elastic wave filter device and duplexer | |
JP4640412B2 (ja) | 弾性波フィルタ | |
JP6323348B2 (ja) | フィルタ装置 | |
US9998098B2 (en) | Band pass filter and duplexer | |
US10250227B2 (en) | Frequency-variable filter | |
JP6439328B2 (ja) | 可変共振回路および可変フィルタ回路 | |
JP6308221B2 (ja) | 周波数可変フィルタ | |
KR20160091279A (ko) | 래더형 필터 | |
JP6900580B2 (ja) | Rfフィルタおよびrfフィルタを設計する方法 | |
JP5673818B2 (ja) | 分波器 | |
JPWO2014192754A1 (ja) | チューナブルフィルタ | |
CN107306122B (zh) | 弹性波滤波器装置 | |
JP6708258B2 (ja) | 弾性波フィルタ装置及び複合フィルタ装置 | |
WO2014034214A1 (ja) | フィルタ装置及びデュプレクサ | |
JP6750528B2 (ja) | 弾性波フィルタ装置 | |
JP5503764B2 (ja) | フィルタ、デュープレクサ、通信モジュール | |
WO2021006073A1 (ja) | ラダー型フィルタ及び複合フィルタ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13848772 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2014543169 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2013848772 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 20157010557 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |