JP2019114640A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP2019114640A JP2019114640A JP2017246383A JP2017246383A JP2019114640A JP 2019114640 A JP2019114640 A JP 2019114640A JP 2017246383 A JP2017246383 A JP 2017246383A JP 2017246383 A JP2017246383 A JP 2017246383A JP 2019114640 A JP2019114640 A JP 2019114640A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 230000005855 radiation Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000005549 size reduction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (5)
- 半導体チップと、
前記半導体チップを封止したパッケージと、
前記半導体チップに接続され前記パッケージから突出した複数の端子とを備え、
前記複数の端子は、第1のピッチで互いに並んで配置された複数の第1端子と、前記第1のピッチよりも広い第2のピッチで互いに並んで配置された複数の第2端子とを有し、
各端子は、根元部と、前記根元部よりも細い先端部と、前記根元部と前記先端部とを接続する接続部とを有し、
前記複数の第1端子の前記接続部は直角であり、
前記複数の第2端子の前記接続部は円弧状であることを特徴とする半導体モジュール。 - 前記第2端子の前記接続部の円弧の半径rと前記第2端子の前記先端部の幅Lとの関係はr/L≧1/3であることを特徴とする請求項1に記載の半導体モジュール。
- 前記第2端子の前記接続部の円弧の角度は90°以上であることを特徴とする請求項1又は2に記載の半導体モジュール。
- 前記パッケージに取り付けられた放熱フィンと、
前記複数の端子に取り付けられた基板とを更に備えることを特徴とする請求項1〜3の何れか1項に記載の半導体モジュール。 - 前記半導体チップはワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜4の何れか1項に記載の半導体モジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017246383A JP6780635B2 (ja) | 2017-12-22 | 2017-12-22 | 半導体モジュール |
US15/969,807 US10373899B2 (en) | 2017-12-22 | 2018-05-03 | Semiconductor module using lead frame for power and control terminals and both having asymmetric or inhomogenous configuration |
DE102018212047.1A DE102018212047B4 (de) | 2017-12-22 | 2018-07-19 | Halbleitermodul |
CN201811541847.5A CN109994447B (zh) | 2017-12-22 | 2018-12-17 | 半导体模块 |
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Application Number | Priority Date | Filing Date | Title |
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JP2017246383A JP6780635B2 (ja) | 2017-12-22 | 2017-12-22 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
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JP2019114640A true JP2019114640A (ja) | 2019-07-11 |
JP6780635B2 JP6780635B2 (ja) | 2020-11-04 |
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JP2017246383A Active JP6780635B2 (ja) | 2017-12-22 | 2017-12-22 | 半導体モジュール |
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US (1) | US10373899B2 (ja) |
JP (1) | JP6780635B2 (ja) |
CN (1) | CN109994447B (ja) |
DE (1) | DE102018212047B4 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102022124032A1 (de) | 2021-11-25 | 2023-05-25 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Leistungsumwandlungsvorrichtung |
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Publication number | Priority date | Publication date | Assignee | Title |
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US10818568B1 (en) * | 2019-06-28 | 2020-10-27 | Alpha And Omega Semiconductor (Cayman) Ltd. | Super-fast transient response (STR) AC/DC converter for high power density charging application |
JP7479759B2 (ja) * | 2020-06-02 | 2024-05-09 | 三菱電機株式会社 | 半導体装置の製造方法、および、半導体装置 |
USD1022932S1 (en) * | 2021-03-16 | 2024-04-16 | Rohm Co., Ltd. | Semiconductor module |
USD1021829S1 (en) * | 2021-03-16 | 2024-04-09 | Rohm Co., Ltd. | Semiconductor module |
USD1021830S1 (en) * | 2021-03-16 | 2024-04-09 | Rohm Co., Ltd. | Semiconductor module |
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JPS6063952A (ja) * | 1984-07-06 | 1985-04-12 | Hitachi Ltd | レジン封止半導体装置の実装方法 |
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US8471373B2 (en) * | 2010-06-11 | 2013-06-25 | Panasonic Corporation | Resin-sealed semiconductor device and method for fabricating the same |
JP2015090960A (ja) * | 2013-11-07 | 2015-05-11 | 株式会社デンソー | 半導体パッケージ |
JP2016072376A (ja) * | 2014-09-29 | 2016-05-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9966327B2 (en) | 2014-11-27 | 2018-05-08 | Shindengen Electric Manufacturing Co., Ltd. | Lead frame, semiconductor device, method for manufacturing lead frame, and method for manufacturing semiconductor device |
CN106298553A (zh) * | 2015-06-11 | 2017-01-04 | 台达电子企业管理(上海)有限公司 | 封装模组及其制作方法 |
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- 2018-05-03 US US15/969,807 patent/US10373899B2/en active Active
- 2018-07-19 DE DE102018212047.1A patent/DE102018212047B4/de active Active
- 2018-12-17 CN CN201811541847.5A patent/CN109994447B/zh active Active
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JPS5061770U (ja) * | 1973-10-05 | 1975-06-06 | ||
JPS6063952A (ja) * | 1984-07-06 | 1985-04-12 | Hitachi Ltd | レジン封止半導体装置の実装方法 |
JP2000138338A (ja) * | 1998-10-29 | 2000-05-16 | Mitsubishi Electric Corp | 半導体装置 |
JP2011100855A (ja) * | 2009-11-06 | 2011-05-19 | Mitsubishi Electric Corp | 電力用半導体装置 |
WO2012137760A1 (ja) * | 2011-04-04 | 2012-10-11 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP2015035515A (ja) * | 2013-08-09 | 2015-02-19 | 三菱電機株式会社 | 半導体装置 |
JP2017139290A (ja) * | 2016-02-02 | 2017-08-10 | エスアイアイ・セミコンダクタ株式会社 | 樹脂封止型半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102022124032A1 (de) | 2021-11-25 | 2023-05-25 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Leistungsumwandlungsvorrichtung |
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US10373899B2 (en) | 2019-08-06 |
CN109994447A (zh) | 2019-07-09 |
CN109994447B (zh) | 2023-05-12 |
DE102018212047A8 (de) | 2019-08-29 |
US20190198431A1 (en) | 2019-06-27 |
DE102018212047B4 (de) | 2023-07-06 |
DE102018212047A1 (de) | 2019-06-27 |
JP6780635B2 (ja) | 2020-11-04 |
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