JP2019102522A - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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Abstract
Description
10 半導体基板
11 層間絶縁膜
12 下層配線
13 電極パッド
14 パッシベーション膜
15 下層絶縁層
16 再配線
17 密着層
18 導電層
19 シールド
20 シールド部
21 配線部
22 導電部材
22a 第1の導電部材
22b 第2の導電部材
23 上層絶縁層
24 バリアメタル部
24a Ti層
24b Cu層
24c Ni層
25 外部接続端子
31 下層絶縁膜
32 UBM膜
32a Ti層
32b Cu層
33 レジストマスク
34 レジストマスク
35 上層絶縁膜
36 UBM膜
36a Ti層
36b Cu層
37 レジストマスク
40 密着層
41 導電部材
42 レジスト膜
OP,AP 開口部
Claims (20)
- 半導体基板の主面上に形成された下層絶縁層と、
前記下層絶縁層の上面に接して形成された密着層と、
前記密着層上に積層された第1の膜厚を有する第1の導電部材と、前記密着層上に前記第1の導電部材に接して積層されるとともに前記第1の膜厚より薄い第2の膜厚を有する第2の導電部材と、を含む導電部材と、
を備えることを特徴とする半導体装置。 - 前記下層絶縁層は前記上面に対向する下面を電極の表面に接して形成され、前記電極の前記表面の一部を露出すると共に上面側の外周と前記下層絶縁層の前記下面側の内周と前記外周と前記内周とを接続するテーパ形状の側壁とからなる第1開口部を備え、
前記密着層は、前記下層絶縁層の前記上面上と、前記第1開口部の側壁上と、前記第1開口部が露出する前記電極の表面と、に延在し、
前記第1の導電部材は前記第1開口部を介して前記電極に接続され、平面視における前記第1導電部材の前記下層絶縁層の上面に対応する領域は前記第1開口部の前記外周を内包する、
ことを特徴とする請求項1に記載の半導体装置。 - 前記導電部材上に形成され、前記第1の導電部材の表面の一部を露出する第2開口部を有する上層絶縁層と、
前記上層絶縁層の表面上に形成されると共に前記第2開口部を介して前記第1の導電部材に接続される外部接続端子と、
を備えることを特徴とする請求項1又は2に記載の半導体装置。 - 平面視において、前記外部接続端子の前記上層絶縁層の表面に対応する領域は、前記第1の導電部材の前記上層絶縁層の表面に対応する領域を内包することを特徴とする請求項3に記載の半導体装置。
- 前記導電部材は一方の前記第1の導電部材と、前記一方の第1の導電部材と離間した他方の前記第1の導電部材と、前記一方の前記第1の導電部材と前記他方の前記第1の導電部材とに接する前記第2の導電部材と、を備え、
前記一方の前記第1の導電部材は、前記下層絶縁層の開口部を介して電極と接続され、
前記他方の前記第1の導電部材は、外部接続端子に接続される、
ことを特徴とする請求項1に記載の半導体装置。 - 前記外部接続端子は、バリアメタル部を介して前記第1の導電部材と接続されることを特徴とする請求項3乃至5のいずれか1項に記載の半導体装置。
- 前記密着層と前記第1の膜厚の導電層とを有すると共に前記下層絶縁層の上面上に形成された配線層を更に備え、
前記第2の導電部材と前記第2の導電部材に対応する前記密着層とは、前記下層絶縁層の上面上に延在すると共に前記配線層の少なくとも2辺と所定の距離を離間して近接する、
ことを特徴とする請求項1乃至6のいずれか1項に記載の半導体装置。 - 前記第2の導電部材と前記第2の導電部材に対応する前記密着層とは、前記配線層と所定の距離を離間して前記配線層を囲む
ことを特徴とする請求項7に記載の半導体装置。 - 前記導電部材は、前記外部接続端子を介して固定電位に接続されることを特徴とする請求項3乃至8のいずれか1項に記載の半導体装置。
- 前記第1の導電部材はメッキにより形成され、前記第2の導電部材はスパッタにより形成されることを特徴とする請求項1乃至9のいずれか1項に記載の半導体装置。
- 半導体基板の主面上に形成された下層絶縁層と、
前記下層絶縁層上に形成され、第1の膜厚を有する配線層と、
前記下層絶縁層上に前記配線層の少なくとも2辺と所定の距離を離間して近接し、且つ、前記第1の膜厚より薄い第2の膜厚を有するシールド部と、
を備えることを特徴とする半導体装置。 - 前記シールド部は、所定の距離を離間して前記配線層の周囲を囲むことを特徴とする請求項11に記載の半導体装置。
- 前記下層絶縁層と前記配線層と前記シールド部とを被覆する上層絶縁層と、
前記上層絶縁層の表面上に形成され、且つ、前記シールド部に電気的に接続された一方の外部接続端子と前記配線層の一端に接続された他方の外部接続端子とを含む外部接続端子と、
を備えることを特徴とする請求項11又は12に記載の半導体装置。 - 前記配線層の他端は、前記下層絶縁層の開口部を介して電極に接続されることを特徴とする請求項13に記載の半導体装置。
- 前記下層絶縁層上に形成された前記第1の膜厚を有する配線部を更に備え、
前記他方の外部接続端子は、前記配線部を露出する前記上層絶縁層の開口部を介して前記配線部と接続され、
前記シールド部は、前記配線部に接続されると共に前記配線部を介して前記一方の外部接続端子に接続される、
ことを特徴とする請求項13又は14に記載の半導体装置。 - 前記シールド部は、前記一方の外部接続端子を介して固定電位に接続されることを特徴とする請求項13乃至15のいずれか1項に記載の半導体装置。
- 電極が形成された半導体基板を準備する工程と、
前記半導体基板の主面上に前記電極の表面の一部を露出する開口部を有する下層絶縁層を形成する第1の工程と、
前記下層絶縁層の表面及び前記開口部から露出した前記電極の表面上に、密着層及びシード層からなるUBM膜を成膜する第2の工程と、
前記下層絶縁層の前記開口部に対応する領域に第1の膜厚を有する第1の導電部材を形成する第3の工程と、
前記シード層上のシールド部に対応する領域にレジストを形成する第4の工程と、
前記レジスト及び前記第1の導電部材をマスクとして前記UBM膜を除去し、バリアメタル部を形成する第5の工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記第3の工程は、前記シールド部に対応する領域から所定の距離を離間した導電層を形成し、
前記第5の工程は、前記レジストと前記第1の導電部材と前記導電層をマスクとして前記UBM膜を除去する、
ことを特徴とする請求項17に記載の半導体装置の製造方法。 - 前記第2の工程では、スパッタ法により前記密着層と前記シード層とを積層することにより前記UBM膜を成膜することを特徴とする請求項17又は18に記載の半導体装置の製造方法。
- 前記第5の工程では、ウェットエッチングにより前記シード層及び前記密着層を除去
することを特徴とする請求項17乃至19のいずれか1項に記載の半導体装置の製造方法。
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JP2023023401A (ja) * | 2021-08-05 | 2023-02-16 | アオイ電子株式会社 | 半導体装置およびその製造方法 |
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US11004813B2 (en) | 2021-05-11 |
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US11742305B2 (en) | 2023-08-29 |
US20190164918A1 (en) | 2019-05-30 |
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