JP2019075441A - 光電変換装置および機器 - Google Patents

光電変換装置および機器 Download PDF

Info

Publication number
JP2019075441A
JP2019075441A JP2017199604A JP2017199604A JP2019075441A JP 2019075441 A JP2019075441 A JP 2019075441A JP 2017199604 A JP2017199604 A JP 2017199604A JP 2017199604 A JP2017199604 A JP 2017199604A JP 2019075441 A JP2019075441 A JP 2019075441A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
gate electrode
conversion device
light shielding
shielding film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017199604A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019075441A5 (enExample
Inventor
紘司 原
Koji Hara
紘司 原
小川　俊之
Toshiyuki Ogawa
俊之 小川
一 池田
Hajime Ikeda
一 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2017199604A priority Critical patent/JP2019075441A/ja
Priority to US16/156,442 priority patent/US10784299B2/en
Publication of JP2019075441A publication Critical patent/JP2019075441A/ja
Publication of JP2019075441A5 publication Critical patent/JP2019075441A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2017199604A 2017-10-13 2017-10-13 光電変換装置および機器 Pending JP2019075441A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017199604A JP2019075441A (ja) 2017-10-13 2017-10-13 光電変換装置および機器
US16/156,442 US10784299B2 (en) 2017-10-13 2018-10-10 Photoelectric conversion apparatus and equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017199604A JP2019075441A (ja) 2017-10-13 2017-10-13 光電変換装置および機器

Publications (2)

Publication Number Publication Date
JP2019075441A true JP2019075441A (ja) 2019-05-16
JP2019075441A5 JP2019075441A5 (enExample) 2020-11-19

Family

ID=66095997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017199604A Pending JP2019075441A (ja) 2017-10-13 2017-10-13 光電変換装置および機器

Country Status (2)

Country Link
US (1) US10784299B2 (enExample)
JP (1) JP2019075441A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12356746B2 (en) 2020-04-15 2025-07-08 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1074925A (ja) * 1996-08-30 1998-03-17 Sony Corp 固体撮像素子とその製造方法
JP2005005573A (ja) * 2003-06-13 2005-01-06 Fujitsu Ltd 撮像装置
US20060184297A1 (en) * 2004-12-23 2006-08-17 Higgins-Luthman Michael J Object detection system for vehicle
JP2009105146A (ja) * 2007-10-22 2009-05-14 Panasonic Corp 固体撮像装置及びその製造方法
JP2009290000A (ja) * 2008-05-29 2009-12-10 Toshiba Corp 固体撮像装置
JP2010118477A (ja) * 2008-11-12 2010-05-27 Canon Inc 光電変換装置及び撮像システム
WO2012144196A1 (ja) * 2011-04-22 2012-10-26 パナソニック株式会社 固体撮像装置
JP2012248681A (ja) * 2011-05-27 2012-12-13 Canon Inc 固体撮像装置の製造方法
JP2013038266A (ja) * 2011-08-09 2013-02-21 Canon Inc 撮像装置、撮像システムおよび撮像装置の製造方法
JP2014072295A (ja) * 2012-09-28 2014-04-21 Canon Inc 半導体装置の製造方法
JP2014075378A (ja) * 2012-10-02 2014-04-24 Canon Inc 固体撮像装置、および撮像システム
JP2014216554A (ja) * 2013-04-26 2014-11-17 オリンパス株式会社 撮像装置
JP2015090971A (ja) * 2013-11-07 2015-05-11 ルネサスエレクトロニクス株式会社 固体撮像素子およびその製造方法
JP2015188049A (ja) * 2014-03-14 2015-10-29 キヤノン株式会社 固体撮像装置及び撮像システム
JP2016027663A (ja) * 2015-09-24 2016-02-18 キヤノン株式会社 固体撮像装置、それを用いた撮像システム及び固体撮像装置の製造方法
WO2016098624A1 (ja) * 2014-12-18 2016-06-23 ソニー株式会社 固体撮像素子、撮像装置、および電子機器
JP2016178523A (ja) * 2015-03-20 2016-10-06 株式会社リコー 撮像装置、撮像方法、プログラム、車両制御システム、および車両
JP2016219792A (ja) * 2015-05-19 2016-12-22 キヤノン株式会社 固体撮像装置、固体撮像装置の製造方法、および撮像システム

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0992809A (ja) 1995-09-27 1997-04-04 Nikon Corp 固体撮像装置
JP4306265B2 (ja) 2003-02-04 2009-07-29 株式会社ニコン 固体撮像装置
JP5651976B2 (ja) 2010-03-26 2015-01-14 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP5709099B2 (ja) 2010-05-24 2015-04-30 株式会社ブルックマンテクノロジ 固体撮像装置
JP2015146364A (ja) 2014-02-03 2015-08-13 ソニー株式会社 固体撮像素子、固体撮像素子の駆動方法、固体撮像素子の製造方法および電子機器
JP6711597B2 (ja) 2015-12-01 2020-06-17 キヤノン株式会社 固体撮像装置の製造方法、固体撮像装置、及びそれを有する撮像システム
JP6039773B2 (ja) 2015-09-17 2016-12-07 キヤノン株式会社 固体撮像装置の製造方法
JP2017183407A (ja) 2016-03-29 2017-10-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6957226B2 (ja) * 2017-06-20 2021-11-02 キヤノン株式会社 光電変換装置および機器

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1074925A (ja) * 1996-08-30 1998-03-17 Sony Corp 固体撮像素子とその製造方法
JP2005005573A (ja) * 2003-06-13 2005-01-06 Fujitsu Ltd 撮像装置
US20060184297A1 (en) * 2004-12-23 2006-08-17 Higgins-Luthman Michael J Object detection system for vehicle
JP2009105146A (ja) * 2007-10-22 2009-05-14 Panasonic Corp 固体撮像装置及びその製造方法
JP2009290000A (ja) * 2008-05-29 2009-12-10 Toshiba Corp 固体撮像装置
JP2010118477A (ja) * 2008-11-12 2010-05-27 Canon Inc 光電変換装置及び撮像システム
WO2012144196A1 (ja) * 2011-04-22 2012-10-26 パナソニック株式会社 固体撮像装置
JP2012248681A (ja) * 2011-05-27 2012-12-13 Canon Inc 固体撮像装置の製造方法
JP2013038266A (ja) * 2011-08-09 2013-02-21 Canon Inc 撮像装置、撮像システムおよび撮像装置の製造方法
JP2014072295A (ja) * 2012-09-28 2014-04-21 Canon Inc 半導体装置の製造方法
JP2014075378A (ja) * 2012-10-02 2014-04-24 Canon Inc 固体撮像装置、および撮像システム
JP2014216554A (ja) * 2013-04-26 2014-11-17 オリンパス株式会社 撮像装置
JP2015090971A (ja) * 2013-11-07 2015-05-11 ルネサスエレクトロニクス株式会社 固体撮像素子およびその製造方法
JP2015188049A (ja) * 2014-03-14 2015-10-29 キヤノン株式会社 固体撮像装置及び撮像システム
WO2016098624A1 (ja) * 2014-12-18 2016-06-23 ソニー株式会社 固体撮像素子、撮像装置、および電子機器
JP2016178523A (ja) * 2015-03-20 2016-10-06 株式会社リコー 撮像装置、撮像方法、プログラム、車両制御システム、および車両
JP2016219792A (ja) * 2015-05-19 2016-12-22 キヤノン株式会社 固体撮像装置、固体撮像装置の製造方法、および撮像システム
JP2016027663A (ja) * 2015-09-24 2016-02-18 キヤノン株式会社 固体撮像装置、それを用いた撮像システム及び固体撮像装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12356746B2 (en) 2020-04-15 2025-07-08 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment

Also Published As

Publication number Publication date
US10784299B2 (en) 2020-09-22
US20190115383A1 (en) 2019-04-18

Similar Documents

Publication Publication Date Title
US12068351B2 (en) Solid-state image pickup device
US11742373B2 (en) Semiconductor device and method of manufacturing semiconductor device
US11329093B2 (en) Photoelectric conversion apparatus, equipment including photoelectric conversion apparatus, and manufacturing method of photoelectric conversion apparatus
US11177314B2 (en) Photoelectric conversion apparatus and image pickup system
CN102157537B (zh) 固体摄像器件及其制造方法、电子装置和半导体器件
US9171799B2 (en) Photoelectric conversion apparatus, image pickup system, and manufacturing method therefor
US20200243590A1 (en) Imaging device and electronic device
JP2019140252A (ja) 光電変換装置および機器
US10622397B2 (en) Semiconductor apparatus and equipment
JP7250879B2 (ja) 光電変換装置および機器
KR102530072B1 (ko) 이미지 센서, 촬상 장치 및 이미지 센서 칩 패키지의 제조 방법
JP2009252949A (ja) 固体撮像装置及びその製造方法
JP2020043265A (ja) 光電変換装置および機器
JP2021027276A (ja) 光電変換装置および機器
US9812476B2 (en) Photoelectric transducer and imaging system
JP7414492B2 (ja) 光電変換装置、光電変換装置の製造方法
CN111564459B (zh) 图像感测装置及其形成方法
US10431617B2 (en) Photoelectric conversion device and apparatus
US10784299B2 (en) Photoelectric conversion apparatus and equipment
CN114730784A (zh) 半导体装置和设备
KR20210017369A (ko) 이미지 센서
JP7646918B2 (ja) 光電変換装置、光電変換装置を備えた機器、光電変換装置の製造方法
KR100817077B1 (ko) Ｃｍｏｓ 이미지 센서의 제조 방법
JP2024134054A (ja) 光電変換装置、その製造方法および機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201008

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201008

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210910

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211026

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211222

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220517

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220713

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20221115