JP2019047085A - サセプタ、cvd装置及びエピタキシャルウェハの製造方法 - Google Patents
サセプタ、cvd装置及びエピタキシャルウェハの製造方法 Download PDFInfo
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Abstract
Description
図6(A)〜(C)を用いて、特許文献1に開示されているサセプタを説明すると、ウェハWの径より小さく、表面にウェハを載置するための凸部101aを有するインナーサセプタ101と、中心部に開口部102cを有し、インナーサセプタ101が載置されることでその開口部102cが遮蔽されるアウターサセプタ102とからなるサセプタ100が記載されている。
アウターサセプタ102は、ウェハWを支持する段部102aと、インナーサセプタ101を支持する段部102bとを備える。また、インナーサセプタ101は、おもて面101bに有するドット状の凸部101aは同一円周状に略等間隔に配置されていて、ウェハWをCVD装置へ搬送中にウェハWを支持し、また成長中にはアウターサセプタ102の開口部102cに嵌合して、炉下部からの不純物ガスの流入を防ぐ役割もある。
また、ウェハWは、アウターサセプタ102の段部102aと、インナーサセプタ101の凸部101aとによって支持されており(段落0022等)、ウェハWの裏面Waとインナーサセプタ101の凸部101aとが接した状態でSiCエピタキシャル膜の形成がなされる。図6(A)に示す通り、凸部の高さの分だけウェハWの裏面Waと凸部以外のインナーサセプタ101の上面101bとの間には間隙Sが形成される。
また、処理後の高温状態のウェハを室温近傍の反応炉外へ取り出すときにも同様の問題がある。
すなわち、本発明は、上記課題を解決するため、以下の手段を提供する。
前記突起部の高さが、サセプタにウェハを載置したときにウェハに接しない高さであるサセプタ。
図1は、本発明の一実施形態に係るサセプタの一例を模式的に示す断面図である。図1(A)は、ウェハWがサセプタに載置された状態におけるサセプタの断面模式図であり、図1(B)は、外側サセプタの断面模式図であり、図1(C)は、内側サセプタの断面模式図である。
図1に示すサセプタ1は、化学的気相成長によってウェハ上に膜を形成するCVD装置においてウェハを保持するサセプタであって、外側サセプタ2と内側サセプタ1とからなり、外側サセプタ2は内側サセプタ1を嵌合させて収納する開口部2cと、ウェハの外周部Wsが載置されるウェハ載置面2aを有し、内側サセプタ1は、ウェハWと対向する面1bに突起部1aを有し、突起部1aの高さhが、サセプタ(外側サセプタと内側サセプタとを組み合わせた状態)にウェハWを載置したときにウェハWに接しない高さである。言い換えると、突起部1aの高さの位置H2がウェハ載置面2aの高さの位置H1より低いということである。
内側サセプタは、後述する上下駆動機構(突き上げ機構)により、上下に可動である。内側サセプタが付きあがることによって外側サセプタとウェハを載置した内側サセプタが分離可能である。
高温で搬送を行う場合、熱の影響で、ウェハが下凸に反る場合がある。突起をもたないと、下凸反り状態のウェハと内側サセプタが点でしか接触せず、接触面積が小さくなってしまうため、搬送中にウェハが滑落しやすくなる。ウェハが下凸に反っている場合に内側サセプタ上面が平坦又は凸になっているとウェハの安定した保持ができないため、内側サセプタ上面の平板の外周部に円状または回転対称に配置された微凸構造を持つことが好ましい。
そのため、これらを両立させる範囲として、ウェハ裏面とサセプタ表面の距離は、1.5〜5.0mmが好ましく、1.8〜3.2mmがより好ましい。突起部の高さはエピタキシャル成長中に突起部がウェハの裏面に接触しない範囲とし、0.1〜0.5mmが好ましく、0.2〜0.3mmがより好ましい。そして、外側サセプタと内側サセプタとが組み合わせた状態(サセプタとして使用する状態)で、内側サセプタの突起部上面と外側サセプタのウェハ支持面(ウェハ裏面)の高さの差は1.0〜4.9mmとするのが好ましく、1.5〜3mmとすることがより好ましい。
内側サセプタには、内側サセプタ外形の例えば半径の8割の半径を持つ円周状の突起が設けられる。突起部の高さは例えば0.2mmである。突起の位置が外周側であるほど内側サセプタとウェハの接触長さが大きくなるため、搬送は安定するが、ウェハの下凸を吸収するためには、突起部の高さが高くなる必要があり、裏面荒れは大きくなる。突起の位置が内周側であるほど内側サセプタとウェハの接触長さが短くなるため、搬送は不安定になるが、ウェハの下凸を吸収するための突起部の高さがを低くすることが可能であり、裏面荒れは小さくなる。したがって、突起の位置は、安定した搬送ができる範囲で内側であることが望ましく、中心からの距離を、ウェハの半径に対して40%から90%の位置とすることができる。内側サセプタの外径は、この突起部の位置を考慮して決めればよい。
外側サセプタ上に内側サセプタが載置された状態で、内側サセプタの突起部を除く面と外側サセプタのウェハ支持面の高さの差は、例えば2mmである。
従って、サセプタが結合した状態でウェハを設置した場合、ウェハ下面と突起部は接触しない。
図3は、本発明の一実施形態に係るCVD装置の概略を模式的に示す断面図である。
図3に示すCVD装置30は、ウェハが収容され、化学的気相成長によってウェハ上に膜を形成する反応炉31と、反応炉31にプロセスガスを供給するためのガス供給機構32と、本発明のサセプタ10と、ウェハをサセプタ10の下部より加熱するためのヒータ33と、ウェハを回転させるための回転機構38と、ヒータを貫通し、内側サセプタ1を上昇及び下降させるための上下駆動機構34と、を備える。図3〜図5に示した例では、内側サセプタ1のみを上下駆動機構34によって上昇・下降させたが、サセプタ10全体を上昇・下降させる構成の上下駆動機構であってもよい。
図3に示すCVD装置30はさらに、反応炉よりプロセスガスを排出するためのガス排出部35と、ウェハを反応炉内に搬入するための開口部となるゲートバルブ36を有し、このゲートバルブ36を通して反応炉内にウェハを搬入する搬送機構37を有する。
ウェハWは内側サセプタ1に載置させる位置まで搬送ハンドによって搬送される。搬送ハンドのウェハ支持部は内側サセプタより大きいがウェハWより小さい空隙を有しており、ハンドの位置を内側サセプタ1より下に移動させることにより、内側サセプタ1とウェハWを分離することが可能である。
ウェハWを内側サセプタ1に載せた後は、搬送ハンドを反応炉31の外に移動させ、ゲートバルブ36を閉じる。
図3〜図5に示したCVD装置を用い、搬送機構37と上下駆動機構34を使用して、回転機構38上にある外側サセプタ2に内側サセプタ1を嵌合させた状態のサセプタ10にウェハWを載置させる(図5参照)。その際、ヒータ33に通電を行い、反応炉内を800℃以上に維持しておく。また、ウェハWも、反応炉31の外で、搬送機構37の搬送ハンドに載せた状態で800℃以上に維持しておく。反応炉31の外部で高温に維持するためには、反応炉の外部に加熱ヒータを設置した加熱領域を設けておけばよい。高温搬送時には、結晶成長には寄与しないガス、たとえばアルゴンや水素などを流通することができる。あるいは、真空中で搬送を行うこともできる。
1a、11a、21a 突起部
2 外側サセプタ
2a ウェハ載置面
2b 段差
2c 開口部
10 サセプタ
30 CVD装置
31 反応炉
34 上下駆動機構
W ウェハ
Claims (6)
- 化学的気相成長によってウェハ上に膜を形成するCVD装置においてウェハを保持するサセプタであって、
前記サセプタは、外側サセプタと内側サセプタとからなり
前記外側サセプタは前記内側サセプタを嵌合させて収納する開口部と、ウェハの外周部が載置されるウェハ載置面を有し、
前記内側サセプタは、ウェハと対向する面に突起部を有し、
前記突起部の高さが、サセプタにウェハを載置したときにウェハに接しない高さであることを特徴とするサセプタ。 - 前記外側サセプタの開口部は段差を有し、段差に内側サセプタを嵌合させることにより、前記開口部が遮断されることを特徴とする請求項1に記載のサセプタ。
- 前記内側サセプタが、載置されるウェハよりも小さいことを特徴とする請求項1又は2のいずれかに記載のサセプタ。
- 前記突起部が、上面に円周上又は回転対称に配置されていることを特徴とする請求項1〜3のいずれか一項に記載のサセプタ。
- ウェハが収容され、化学的気相成長によってウェハ上に膜を形成する反応炉と
請求項1〜4のいずれか一項に記載のサセプタと、
前記サセプタを上昇及び下降させるための上下駆動機構と、を備えることを特徴とするCVD装置。 - 請求項5に記載のCVD造装置を用いてSiC単結晶ウェハ上にSiC単結晶エピタキシャル層を形成するエピタキシャルウェハを製造する方法であって、
上下駆動機構を用いて、前記サセプタの上面にウェハを載置させるウェハ搬送工程を有し、
前記ウェハ搬送工程を800℃以上の高温で行うことを特徴とするエピタキシャルウェハの製造方法。
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JP2009270143A (ja) * | 2008-05-02 | 2009-11-19 | Nuflare Technology Inc | サセプタ、半導体製造装置及び半導体製造方法 |
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