JP2019041024A - 冷媒用の流路を有する部材、冷媒用の流路を有する部材の制御方法及び基板処理装置 - Google Patents
冷媒用の流路を有する部材、冷媒用の流路を有する部材の制御方法及び基板処理装置 Download PDFInfo
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- 239000003507 refrigerant Substances 0.000 title claims abstract description 111
- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 238000012545 processing Methods 0.000 title claims description 49
- 238000000034 method Methods 0.000 title claims description 23
- 239000002826 coolant Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000013461 design Methods 0.000 abstract description 6
- 238000012937 correction Methods 0.000 abstract description 5
- 230000008859 change Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 43
- 230000008569 process Effects 0.000 description 11
- 238000012546 transfer Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 6
- 230000004043 responsiveness Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
Description
まず、基板処理装置1の一例について、図1を参照しながら説明する。図1は、一実施形態に係る基板処理装置の一例を示す。本実施形態にかかる基板処理装置1は、容量結合型の平行平板基板処理装置であり、略円筒形の処理容器10を有している。処理容器10の内面には、アルマイト処理(陽極酸化処理)が施されている。処理容器10の内部は、プラズマによりエッチング処理や成膜処理等のプラズマ処理が行われる処理室となっている。
次に、載置台20に形成された冷媒用の流路24a及び突起状部材の一例について、図2を参照しながら説明する。図2は、一実施形態に係る載置台20に形成された冷媒用の流路24aの一例を示す斜視図である。図2では、突起状部材の一例としてネジが示されている。
次に、載置台20に形成された冷媒用の流路24a及び突起状部材の他の例について、図4を参照しながら説明する。図4は、一実施形態に係る載置台20に形成された冷媒用の流路24aの一例を示す斜視図である。図4では、突起状部材が整流板4の場合を示す。
また、整流板4cが、貫通孔3cが形成された流路形成部材5の近傍に取り付けられている。以下、整流板4a〜4dを総称して、整流板4ともいう。整流板4は、特異点又はその近傍であって、流路24a内の冷媒が滞留し、冷媒の流速が急激に遅くなる又は早くなる位置に配置される。例えば、冷媒の流れの向きが変わる流路24aの中央部の、流路24aの内端部の近傍に整流板4が取り付けられてもよい。
突起状部材の一例であるネジ2及び整流板4の表面は、表面積が大きくなるように機械加工されてもよい。例えば、図3(c)には、突起状部材の変形例として、ネジ2にフィン2vを取り付けた構成例が示されている。図3(d)には、突起状部材の変形の一例として、ネジ2に凹凸2wが形成された構成例が示されている。
以上では、冷媒用の流路を有する部材として、基台20aと突起状部材(ネジ2、整流板4)とを有する載置台20を例に挙げて説明した。図1に示す例では、冷媒用の流路を有する部材は、さらに、基台20aに隣接して設けられ、ウェハWを載置する載置面を有し、ウェハWを静電吸着する静電チャック21を有する。
ネジ2及び整流板4は、流路の底面側から流路24a,42aを貫通してもよいし、流路の天井面側から流路24a,42aを貫通してもよいし、流路の側面側から流路24a,42aを貫通してもよい。
流路24a,42aは、渦巻型でなくてもよい。流路24a,42aの他の例としては、環状に流路が同心円上に設けられる例が挙げられる。その場合にも、流路24a,42aに形成された貫通孔や冷媒の入口及び出口の穴、蛇行する流路部分等が特異点になる。よって、特異点又はその近傍に、突起状部材を1つ以上設けることで、流路24a,42a内を流れる冷媒の流速を変更し、抜熱応答性を変更させることで温度に関する特異点を補正することができる。
次に、本実施形態に係る冷媒用の流路を有する部材の制御方法について、図5及び図6を参照しながら説明する。図5は、一実施形態に係る冷媒用の流路を有する部材の制御処理の一例を示すフローチャートである。図6は、一実施形態に係る冷媒用の流路を有する部材の制御処理に用いるテーブルの一例を示す。
2 ネジ
4 整流板
10 処理容器
20 載置台(下部電極)
20a 基台
21 静電チャック
24a 流路
25 フォーカスリング
26 インシュレータリング
27 ヒーター
30 ガス供給部
32 第1のRF電源
34 第2のRF電源
40 ガスシャワーヘッド(上部電極)
40a 本体部
40b 天板
42a 流路
65 排気装置
100 制御部
104 伝熱ガス供給部
105 チラーユニット
106 交流電源
112 直流電源
Claims (10)
- 冷媒用の流路を有する部材であって、
前記流路が形成された基台と、
前記流路内に設けられ、昇降可能又は回転可能な突起状部材と、
を有する部材。 - 前記突起状部材は、前記流路内の温度に関する特異点に配置される、
請求項1に記載の部材。 - 前記流路には、冷媒が流入する入口の穴及び冷媒が流出する出口の穴が形成され、
前記突起状部材は、前記入口の穴及び前記出口の穴を特異点として、該特異点の近傍に配置される、
請求項1又は2に記載の部材。 - 前記流路は、渦巻型に形成され、
前記突起状部材は、冷媒の流れの向きが変わる流路の中央部を特異点として、該特異点又はその近傍に配置される、
請求項1〜3のいずれか一項に記載の部材。 - 前記流路には、貫通孔が形成され、
前記突起状部材は、前記貫通孔を特異点として、該特異点の近傍に配置される、
請求項1〜4のいずれか一項に記載の部材。 - 前記突起状部材は、ネジ又は整流板である、
請求項1〜5のいずれか一項に記載の部材。 - 前記流路を有する部材は、
前記基台に隣接して設けられ、被処理体を載置する載置面を有し、被処理体を静電吸着する静電チャックを有する、
請求項1〜6のいずれか一項に記載の部材。 - 前記流路を有する部材は、
前記基台に隣接して設けられ、電極として機能する板状部材を有する、
請求項1〜7のいずれか一項に記載の部材。 - 処理容器内に配置され、被処理体を載置する載置台と、前記載置台に対向して配置される上部電極と、冷媒用の流路を有する部材とを有する基板処理装置であって、
前記流路を有する部材は、
前記流路が形成された基台と、
前記流路内に設けられ、昇降可能又は回転可能な突起状部材と、を有し、
前記載置台と前記上部電極との少なくともいずれかに設けられる、
基板処理装置。 - 冷媒用の流路を有する部材の制御方法であって、
前記流路を有する部材は、前記流路が形成された基台と、前記流路内に設けられた突起状部材と、加熱部材とを有し、
前記流路に所定の温度の冷媒を供給する工程と、
前記加熱部材に所定の電力を供給する工程と、
前記加熱部材に供給する電力に応じて前記突起状部材の昇降又は回転を制御する工程と、
を有する冷媒用の流路を有する部材の制御方法。
Priority Applications (6)
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JP2017162695A JP6918642B2 (ja) | 2017-08-25 | 2017-08-25 | 冷媒用の流路を有する部材、冷媒用の流路を有する部材の制御方法及び基板処理装置 |
TW107128529A TWI760547B (zh) | 2017-08-25 | 2018-08-16 | 具有冷媒流路的構件、具有冷媒流路的構件之控制方法及基板處理裝置 |
KR1020180097570A KR102542777B1 (ko) | 2017-08-25 | 2018-08-21 | 냉매용의 유로를 가지는 부재, 냉매용의 유로를 가지는 부재의 제어 방법 및 기판 처리 장치 |
US16/110,201 US11569073B2 (en) | 2017-08-25 | 2018-08-23 | Assembly provided with coolant flow channel, method of controlling assembly provided with coolant flow channel, and substrate processing apparatus |
CN202110174995.3A CN112768336A (zh) | 2017-08-25 | 2018-08-24 | 基片载置台和基片处理装置 |
CN201810971767.7A CN109427532B (zh) | 2017-08-25 | 2018-08-24 | 具有制冷剂用的流路的部件及其控制方法和基片处理装置 |
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CN (2) | CN112768336A (ja) |
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JP2019075399A (ja) * | 2017-10-12 | 2019-05-16 | 日本特殊陶業株式会社 | 保持装置および保持装置の製造方法 |
KR102054236B1 (ko) * | 2019-03-15 | 2019-12-12 | 주식회사 뉴엠텍 | 냉각 방식의 샤워헤드 |
JP2021002642A (ja) * | 2019-06-18 | 2021-01-07 | 東京エレクトロン株式会社 | 基板処理装置 |
KR20220132447A (ko) | 2021-03-23 | 2022-09-30 | 도쿄엘렉트론가부시키가이샤 | 기판 지지부 및 기판 처리 장치 |
WO2024004039A1 (ja) * | 2022-06-28 | 2024-01-04 | 日本碍子株式会社 | ウエハ載置台 |
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US10854235B2 (en) * | 2017-12-22 | 2020-12-01 | Seagate Technology Llc | Electrode including a continuously smooth channel |
CN112103166A (zh) * | 2019-06-18 | 2020-12-18 | 东京毅力科创株式会社 | 基板处理装置 |
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Publication number | Publication date |
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TWI760547B (zh) | 2022-04-11 |
CN109427532B (zh) | 2021-03-05 |
KR20190022358A (ko) | 2019-03-06 |
KR102542777B1 (ko) | 2023-06-14 |
CN112768336A (zh) | 2021-05-07 |
CN109427532A (zh) | 2019-03-05 |
JP6918642B2 (ja) | 2021-08-11 |
US11569073B2 (en) | 2023-01-31 |
TW201920888A (zh) | 2019-06-01 |
US20190066985A1 (en) | 2019-02-28 |
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