JP2019145729A - プラズマ処理方法 - Google Patents
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- JP2019145729A JP2019145729A JP2018030501A JP2018030501A JP2019145729A JP 2019145729 A JP2019145729 A JP 2019145729A JP 2018030501 A JP2018030501 A JP 2018030501A JP 2018030501 A JP2018030501 A JP 2018030501A JP 2019145729 A JP2019145729 A JP 2019145729A
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- 238000003672 processing method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 131
- 238000009832 plasma treatment Methods 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 abstract description 47
- 238000000034 method Methods 0.000 description 62
- 101000710013 Homo sapiens Reversion-inducing cysteine-rich protein with Kazal motifs Proteins 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 108090000237 interleukin-24 Proteins 0.000 description 5
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 101000911772 Homo sapiens Hsc70-interacting protein Proteins 0.000 description 2
- 101000661807 Homo sapiens Suppressor of tumorigenicity 14 protein Proteins 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
Description
Claims (3)
- プラズマ処理装置のチャンバの中で支持台上に載置された基板のエッジを囲むフォーカスリングの上面の高さ方向の位置を設定する工程と、
設定された前記フォーカスリングの前記上面の前記高さ方向の前記位置を維持した状態で、前記基板に対してプラズマ処理を行うために前記チャンバの中でプラズマを生成する工程と、
前記プラズマの生成中に、設定された前記フォーカスリングの前記上面の前記高さ方向の前記位置を維持した前記状態において、前記フォーカスリングに負極性の直流電圧を印加する工程と、
を含み、
設定する前記工程では、前記支持台上の搭載領域上に搭載された前記フォーカスリングの前記上面の前記高さ方向の位置が前記支持台上に載置された前記基板の上面の前記高さ方向の位置である基準位置よりも低くなるように設定された厚みを有する該フォーカスリングを、前記チャンバの中に運び入れて、前記基板のエッジを囲むように前記搭載領域上に載置するか、又は、前記フォーカスリングの前記上面の前記高さ方向の前記位置が前記基準位置よりも低くなるように前記チャンバの中でフォーカスリングを移動させる、
プラズマ処理方法。 - 前記基板は、膜及び該膜上に設けられたマスクを有し、
該プラズマ処理方法は、
前記膜及び前記マスクを有する別の基板に対して前記プラズマ処理を行う工程と、
前記プラズマ処理によって前記別の基板のエッジ領域内で前記膜に形成された開口の傾斜量を測定する工程と、
を更に含み、
前記負極性の直流電圧の電圧値は前記傾斜量に応じて決定される、
請求項1に記載のプラズマ処理方法。 - 前記基板は、膜及び該膜上に設けられたマスクを有し、
該プラズマ処理方法は、前記基板のエッジ領域における前記マスクの開口の傾斜量を測定する工程を更に含み、
前記負極性の直流電圧の電圧値は前記傾斜量に応じて決定される、
請求項1に記載のプラズマ処理方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018030501A JP7018331B2 (ja) | 2018-02-23 | 2018-02-23 | プラズマ処理方法及びプラズマ処理装置 |
TW108105546A TWI791093B (zh) | 2018-02-23 | 2019-02-20 | 電漿處理方法 |
KR1020190020266A KR102661857B1 (ko) | 2018-02-23 | 2019-02-21 | 플라즈마 처리 방법 |
US16/282,828 US10714318B2 (en) | 2018-02-23 | 2019-02-22 | Plasma processing method |
US16/897,747 US11342165B2 (en) | 2018-02-23 | 2020-06-10 | Plasma processing method |
KR1020240054672A KR20240060768A (ko) | 2018-02-23 | 2024-04-24 | 플라즈마 처리 장치 |
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JP2018030501A JP7018331B2 (ja) | 2018-02-23 | 2018-02-23 | プラズマ処理方法及びプラズマ処理装置 |
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JP2019145729A true JP2019145729A (ja) | 2019-08-29 |
JP2019145729A5 JP2019145729A5 (ja) | 2020-11-12 |
JP7018331B2 JP7018331B2 (ja) | 2022-02-10 |
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US (2) | US10714318B2 (ja) |
JP (1) | JP7018331B2 (ja) |
KR (2) | KR102661857B1 (ja) |
TW (1) | TWI791093B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210136869A (ko) | 2020-05-07 | 2021-11-17 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
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WO2020023409A1 (en) * | 2018-07-24 | 2020-01-30 | Applied Materials, Inc. | Optically transparent pedestal for fluidly supporting a substrate |
US20210195726A1 (en) * | 2019-12-12 | 2021-06-24 | James Andrew Leskosek | Linear accelerator using a stacked array of cyclotrons |
KR20220100339A (ko) * | 2021-01-08 | 2022-07-15 | 삼성전자주식회사 | 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법 |
Citations (4)
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JP2006245510A (ja) * | 2005-03-07 | 2006-09-14 | Hitachi High-Technologies Corp | プラズマ処理方法およびプラズマ処理装置 |
JP2007258417A (ja) * | 2006-03-23 | 2007-10-04 | Tokyo Electron Ltd | プラズマ処理方法 |
JP2008227063A (ja) * | 2007-03-12 | 2008-09-25 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ分布補正方法 |
JP2012186497A (ja) * | 1999-12-30 | 2012-09-27 | Lam Research Corporation | 電極アッセンブリ |
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JP2005303099A (ja) * | 2004-04-14 | 2005-10-27 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
US7858155B2 (en) * | 2004-11-02 | 2010-12-28 | Panasonic Corporation | Plasma processing method and plasma processing apparatus |
US20070224709A1 (en) | 2006-03-23 | 2007-09-27 | Tokyo Electron Limited | Plasma processing method and apparatus, control program and storage medium |
KR20080001164A (ko) * | 2006-06-29 | 2008-01-03 | 주식회사 하이닉스반도체 | 홀 휨 방지를 위한 플라즈마식각장치 및 그를 이용한 식각방법 |
KR20080023569A (ko) * | 2006-09-11 | 2008-03-14 | 주식회사 하이닉스반도체 | 식각프로파일 변형을 방지하는 플라즈마식각장치 |
JP5281309B2 (ja) * | 2008-03-28 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
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JP2010278166A (ja) * | 2009-05-27 | 2010-12-09 | Tokyo Electron Ltd | プラズマ処理用円環状部品、及びプラズマ処理装置 |
JP5395633B2 (ja) * | 2009-11-17 | 2014-01-22 | 東京エレクトロン株式会社 | 基板処理装置の基板載置台 |
JP5948026B2 (ja) * | 2011-08-17 | 2016-07-06 | 東京エレクトロン株式会社 | 半導体製造装置及び処理方法 |
JP6556046B2 (ja) * | 2015-12-17 | 2019-08-07 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
JP2017126727A (ja) * | 2016-01-15 | 2017-07-20 | 東京エレクトロン株式会社 | 載置台の構造及び半導体処理装置 |
US11404249B2 (en) * | 2017-03-22 | 2022-08-02 | Tokyo Electron Limited | Substrate processing apparatus |
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JP2012186497A (ja) * | 1999-12-30 | 2012-09-27 | Lam Research Corporation | 電極アッセンブリ |
JP2006245510A (ja) * | 2005-03-07 | 2006-09-14 | Hitachi High-Technologies Corp | プラズマ処理方法およびプラズマ処理装置 |
JP2007258417A (ja) * | 2006-03-23 | 2007-10-04 | Tokyo Electron Ltd | プラズマ処理方法 |
JP2008227063A (ja) * | 2007-03-12 | 2008-09-25 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ分布補正方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210136869A (ko) | 2020-05-07 | 2021-11-17 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
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JP7475193B2 (ja) | 2020-05-07 | 2024-04-26 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
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KR20190101889A (ko) | 2019-09-02 |
US20190267217A1 (en) | 2019-08-29 |
KR20240060768A (ko) | 2024-05-08 |
US11342165B2 (en) | 2022-05-24 |
US20200303170A1 (en) | 2020-09-24 |
KR102661857B1 (ko) | 2024-04-26 |
TWI791093B (zh) | 2023-02-01 |
US10714318B2 (en) | 2020-07-14 |
JP7018331B2 (ja) | 2022-02-10 |
TW201937594A (zh) | 2019-09-16 |
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