JP2018538691A - 堆積チャンバでエピタキシャル層を有する半導体ウエハを製造する方法、エピタキシャル層を有する半導体ウエハを製造する装置、およびエピタキシャル層を有する半導体ウエハ - Google Patents
堆積チャンバでエピタキシャル層を有する半導体ウエハを製造する方法、エピタキシャル層を有する半導体ウエハを製造する装置、およびエピタキシャル層を有する半導体ウエハ Download PDFInfo
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Abstract
Description
サセプタと接触させ、サセプタおよびサセプタ上に位置する基板ウエハをロードロックチャンバから堆積チャンバへ搬送することによって、サセプタおよびサセブタ上に位置する基板ウエハを堆積チャンバへ入れることと、
基板ウエハ上にエピタキシャル層を堆積することと、
サセプタと接触させ、サセプタおよびエピタキシャル層を有する半導体ウエハを搬送することによって、堆積チャンバから取り出すこととを備え、前記半導体ウエハは、エピタキシャル層を堆積する過程で製造され、堆積チャンバからロードロックチャンバまでサセプタ上に位置する。
堆積チャンバと、
ロードロックチャンバと、
基板ウエハを基板ウエハの背面の縁部領域において配置するための配置区域を有するサセプタと、
下方からサセプタと接触することで、サセプタおよび(サセプタ上に位置する)基板ウエハ、またはエピタキシャル層を有する半導体ウエハを昇降させるリフト要素と、
サセプタおよびサセプタ上に位置する基板ウエハをロードロックチャンバから堆積チャンバへ搬送するために、および、サセプタおよびエピタキシャル層を有する半導体ウエハを搬送するために、サセプタと接触する、搬送工具とを含み、前記基板ウエハは、堆積チャンバからロードロックチャンバまでサセプタ上に位置する。
本発明に係る方法の前述の実施形態に関して明記される特徴は、本発明に係る装置に対応して適応され得る。反対に、本発明に係る装置の前述の実施形態に関して明記される特徴は、本発明に係る方法に対応して適応され得る。本発明に係る実施形態のこれらのおよび他の特徴は、図および請求項の記載で説明される。個々の特徴は、本発明の実施形態として、別々にまたは組合せで実現され得る。さらに、それらは、独立して保護可能な有利な実施形態について説明し得る。
図1は、エピタキシャル層を有する半導体ウエハを製造するための本発明に係る装置を示す図である。図は、搬送工具7の周りに集められる、2つのロードロックチャンバ3および2つの堆積チャンバ2を備える例示の実施形態を示す。搬送工具7は、基本的に、ロボット10に固定されるエンドエフェクタ8である。エンドエフェクタ8は、サセプタを運ぶための指状部を有する。ロボット10は、エンドエフェクタ8がロードロックチャンバ3の中へ導入され、そこで昇降可能となるように構成される。
1 エピタキシャル層を有する半導体ウエハ
2 堆積チャンバ
3 ロードロックチャンバ
4 基板ウエハ
5 リング
7 搬送工具
8 エンドエフェクタ
9 アクセススロット
10 ロボット
11 操作工具
12 上部保持クランプ
13 下部保持クランプ
14 冷却ブロック
15 内側リフトピン
16 外部リフトピン
17 ヘッド
18 隆起部
19 支持装置
20 ベースプレート
21 リフトピン
22 ヘッドの深部領域
23 配置区域
Claims (9)
- 堆積チャンバでエピタキシャル層を有する半導体ウエハを製造するための方法であって、
基板ウエハを前記基板ウエハの背面の縁部領域においてサセプタの配置区域上へ配置することと、
前記サセプタと接触させ、前記サセプタおよび前記サセプタ上に位置する前記基板ウエハをロードロックチャンバから前記堆積チャンバへ搬送することによって、前記サセプタおよび前記サセブタ上に位置する前記基板ウエハを前記堆積チャンバへ入れることと、
前記基板ウエハ上にエピタキシャル層を堆積することと、
前記サセプタと接触させ、前記サセプタおよびエピタキシャル層を有する半導体ウエハを搬送することによって、前記堆積チャンバから取り出すこととを備え、前記半導体ウエハは、前記エピタキシャル層を堆積する過程で製造され、前記堆積チャンバから前記ロードロックチャンバまで前記サセプタ上に位置する、方法。 - 前記エピタキシャル層を有する半導体ウエハの温度が650℃以上になる時点で前記堆積チャンバから取り出すことを含む、請求項1に記載の方法。
- 前記基板ウエハ上に前記エピタキシャル層を堆積するプロセスの間に、前記ロードロックチャンバにさらなる基板を提供して前記堆積チャンバへ前記さらなる基板ウエハを搬送することを含む、請求項1または請求項2に記載の方法。
- エピタキシャル層を有する半導体ウエハを製造するための装置であって、
堆積チャンバと、
ロードロックチャンバと、
基板ウエハを前記基板ウエハの背面の縁部領域において配置するための配置区域を有するサセプタと、
下方から前記サセプタと接触することで、前記サセプタおよび(前記サセプタ上に位置する)基板ウエハ、またはエピタキシャル層を有する半導体ウエハを昇降させるリフト要素と、
前記サセプタおよび前記サセプタ上に位置する基板ウエハを前記ロードロックチャンバから前記堆積チャンバへ搬送するために、および、前記サセプタおよびエピタキシャル層を有する半導体ウエハを搬送するために、サセプタと接触する、搬送工具とを備え、前記基板ウエハは、前記堆積チャンバから前記ロードロックチャンバまで前記サセプタ上に位置する、装置。 - 前記基板ウエハおよび前記エピタキシャル層を有する半導体ウエハを保持するための、前記ロードロックチャンバにおける上部保持クランプおよび下部保持クランプによって特徴付けられる、請求項4に記載の装置。
- 配置区域を備えるリングと、前記堆積チャンバに配置されるベースプレートとから構成される、2つの部品からなるサセプタによって特徴付けられる、請求項4または請求項5に記載の装置。
- 前面、背面および縁部を有し、1mmの縁部除外の外側において前記前面および前記背面上にはピンマーク欠陥も隙間の像を示す欠陥も検出されず、前記縁部には100nmより大きな深さを有する損傷は存在しない、エピタキシャル層を有する半導体ウエハ。
- 200mm以上の直径を有する、請求項7に記載の半導体ウエハ。
- 前記エピタキシャル層は、単結晶シリコンからなり、単結晶シリコンを覆う、請求項7または請求項8に記載の半導体ウエハ。
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CN115012030A (zh) | 2022-09-06 |
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