JP2018532260A - インダクタを有するガラスウェハを使用するアドバンスドノードシステムオンチップ（ｓｏｃ）によるインダクタの集積化およびウェハ間接合 - Google Patents

インダクタを有するガラスウェハを使用するアドバンスドノードシステムオンチップ（ｓｏｃ）によるインダクタの集積化およびウェハ間接合 Download PDF

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JP2018532260A
JP2018532260A JP2018509890A JP2018509890A JP2018532260A JP 2018532260 A JP2018532260 A JP 2018532260A JP 2018509890 A JP2018509890 A JP 2018509890A JP 2018509890 A JP2018509890 A JP 2018509890A JP 2018532260 A JP2018532260 A JP 2018532260A
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wafer
inductor
soc
magnetic layer
vias
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JP2018532260A5 (enExample
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カリム・アラビ
ラヴィンドラ・ヴァマン・シェノイ
エフゲニー・ペトロヴィチ・グーセフ
メテ・エルターク
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クアルコム，インコーポレイテッド
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    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Semiconductor Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
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JP2018509890A 2015-09-02 2016-08-08 インダクタを有するガラスウェハを使用するアドバンスドノードシステムオンチップ（ｓｏｃ）によるインダクタの集積化およびウェハ間接合 Pending JP2018532260A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/843,964 US20170062398A1 (en) 2015-09-02 2015-09-02 Integration of inductors with advanced-node system-on-chip (soc) using glass wafer with inductors and wafer-to-wafer joining
US14/843,964 2015-09-02
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