JP2018532260A - インダクタを有するガラスウェハを使用するアドバンスドノードシステムオンチップ(soc)によるインダクタの集積化およびウェハ間接合 - Google Patents
インダクタを有するガラスウェハを使用するアドバンスドノードシステムオンチップ(soc)によるインダクタの集積化およびウェハ間接合 Download PDFInfo
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Abstract
Description
102 第1の面
104 第2の面
200 インダクタウェハ
202a 貫通ビア
202b 貫通ビア
202c 貫通ビア
204 第1の面
206 第2の面
400 インダクタウェハ
402 第1の面
404 第2の面
406 第1のビア
408 第2のビア
410 薄膜磁気層、磁気層
412 誘電体層
414 側壁
416 側壁
418 側壁
420 側壁
422 導電層
424 導電層
426 導電層
800 インダクタ
802 コイル
804 ループ
806a 断面線
806b 断面線
808 端子
810 端子
902 金属カラム
904 はんだ
1102a ダイ
1102b ダイ
1102c ダイ
1202 プリント回路板、PCB
1204 集積回路パッケージ、ICパッケージ
1206 ダイ
1208 電圧レギュレータ
1210 ブロック
1212 パッケージ基板
1302 PMIC
1304 SOCデバイス
1306 インダクタおよびコンデンサブロック、L&Cブロック
1308 電圧レギュレータ、VR
1310 回路
Claims (30)
- システムオンチップ(SOC)ウェハと、
第1および第2の面ならびにそれらを通る複数のビアを有するインダクタウェハであって、前記ビアが前記インダクタウェハ中で複数の側壁を形成し、前記インダクタウェハの前記第1の面が前記SOCウェハに隣接して配設される、インダクタウェハと、
前記インダクタウェハの前記第1の面の少なくとも一部の上の磁気層と、
前記磁気層上、前記インダクタウェハの前記第2の面の少なくとも一部の上、および前記インダクタウェハ中の前記ビアにより形成された前記側壁のうちの少なくともいくつかの上に配設される導電層と
を備える、デバイス。 - 前記磁気層が薄膜磁気層を備える、請求項1に記載のデバイス。
- 前記導電層が銅めっきを備える、請求項1に記載のデバイス。
- 前記銅めっきが銅のセミアディティブめっきを含む、請求項3に記載のデバイス。
- 前記SOCウェハと前記インダクタウェハとの間に配設される導電体をさらに備える、請求項1に記載のデバイス。
- 前記導電体がはんだを含む、請求項5に記載のデバイス。
- 前記はんだが前記ビアの少なくとも1つの上に直接配置される、請求項6に記載のデバイス。
- 前記はんだが前記導電層の少なくとも一部と直接接触する、請求項6に記載のデバイス。
- 前記インダクタウェハがガラスウェハを含む、請求項1に記載のデバイス。
- 前記インダクタウェハが石英ウェハを含む、請求項1に記載のデバイス。
- ダイと、
第1および第2の面ならびにそれらを通る複数のビアを有するインダクタウェハであって、前記ビアが前記インダクタウェハ中で複数の側壁を形成し、前記インダクタウェハの前記第1の面が前記ダイに隣接して配設される、インダクタウェハと、
前記インダクタウェハの前記第1の面の少なくとも一部の上の磁気層と、
前記インダクタウェハ中の前記ビアのうちの少なくともいくつかの中に配設される複数の導電体であって、前記インダクタウェハの前記第1の面に隣接する第1の端部および前記インダクタウェハの前記第2の面に隣接する第2の端部をそれぞれ有する、複数の導電体と、
を備える、電圧レギュレータ、ならびに
前記電圧レギュレータから電源電圧を受け取るように構成されるシステムオンチップ(SOC)パッケージであって、前記導電体の前記第1の端部と前記第2の端部のうちの少なくとも一方に接続される少なくとも1つの導電体を有する、SOCパッケージ
を備える、デバイス。 - 前記SOCパッケージに結合されるプリント回路板(PCB)をさらに備える、請求項11に記載のデバイス。
- 前記磁気層が薄膜磁気層を備える、請求項11に記載のデバイス。
- 前記電圧レギュレータが前記インダクタウェハの前記第1および第2の面上に配設される複数の追加導電体をさらに備え、前記インダクタウェハの前記第1および第2の面上の前記追加導電体ならびに前記インダクタウェハ中の前記ビアのうちの少なくともいくつかの中の前記導電体がインダクタのコイルを形成する、請求項11に記載のデバイス。
- 前記コイルが少なくとも部分的に前記磁気層を取り囲む、請求項14に記載のデバイス。
- 前記インダクタウェハがガラスウェハを含む、請求項1に記載のデバイス。
- 前記インダクタウェハが石英ウェハを含む、請求項1に記載のデバイス。
- デバイスを作る方法であって、
第1の面および第2の面を有する第1のウェハを提供するステップと、
前記第1のウェハの前記第1の面および前記第2の面を通る複数のビアを形成するステップであって、前記ビアが、前記第1のウェハ内の複数の側壁により画定される、ステップと、
前記第1のウェハの前記第1の面の少なくとも一部の上にパターン形成された磁気層を形成するステップと、
前記パターン形成された磁気層上の導電層を、前記パターン形成された磁気層、前記第1のウェハの前記第2の面の少なくとも一部、および前記ビアの前記側壁のうちの少なくともいくつかを覆って形成するステップと、
第2のウェハを前記第1のウェハと接合するステップと
を含む、方法。 - 前記第1のウェハがインダクタウェハを含む、請求項18に記載の方法。
- 前記インダクタウェハがガラスウェハを含む、請求項19に記載の方法。
- 前記インダクタウェハが石英ウェハを含む、請求項19に記載の方法。
- 前記第2のウェハ上に複数のはんだを形成するステップをさらに含む、請求項18に記載の方法。
- 前記導電層を形成するステップが、銅のセミアディティブめっきを形成するステップを含む、請求項18に記載の方法。
- 前記パターン形成された磁気層を形成するステップが、前記第1のウェハの前記第1の面の少なくとも一部の上に磁気材料をスパッタリングするステップを含む、請求項18に記載の方法。
- 前記磁気材料がコバルト−タンタル−ジルコニウム(CoTaZr)を含む、請求項24に記載の方法。
- デバイスを作る方法であって、
システムオンチップ(SOC)パッケージを提供するステップ、および
前記SOCパッケージ上に電圧レギュレータを形成するステップであって、
SOCダイを提供するステップと、
第1および第2の面を有するインダクタウェハを提供するステップであって、前記インダクタウェハの前記第1の面が前記SOCダイに隣接して配設される、ステップと、
前記インダクタウェハの前記第1の面および前記第2の面を通る複数のビアを形成するステップであって、前記ビアが前記インダクタウェハ中で複数の側壁により画定される、ステップと、
前記インダクタウェハ中の前記ビアのうちの少なくともいくつかの中に配設される複数の導電体を形成するステップであって、前記導電体が、前記インダクタウェハの前記第1の面に隣接する第1の端部および前記インダクタウェハの前記第2の面に隣接する第2の端部をそれぞれ有する、ステップと
を含むステップ
を含み、
前記SOCパッケージが前記電圧レギュレータから電源電圧を受け取るように構成され、前記SOCパッケージが前記導電体の前記第1の端部と前記第2の端部のうちの少なくとも一方に接続される少なくとも1つの導電体を有する、方法。 - 前記SOCパッケージに結合されるプリント回路板(PCB)を提供するステップをさらに含む、請求項26に記載の方法。
- 前記インダクタウェハの前記第1および第2の面上にパターン形成された導電層を形成するステップをさらに含み、前記インダクタウェハの前記第1および第2の面上の前記パターン形成された導電層ならびに前記インダクタウェハ中の前記ビアのうちの少なくともいくつかの中の前記導電体がインダクタのコイルを形成する、請求項26に記載の方法。
- 前記インダクタウェハ上にパターン形成された磁気層を形成するステップをさらに含む、請求項26に記載の方法。
- 前記パターン形成された磁気層がコバルト−タンタル−ジルコニウム(CoTaZr)を含む、請求項29に記載の方法。
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PCT/US2016/045998 WO2017039962A1 (en) | 2015-09-02 | 2016-08-08 | Integration of inductors with advanced-node system-on-chip (soc) using glass wafer with inductors and wafer-to-wafer joining |
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US20170169934A1 (en) * | 2015-12-15 | 2017-06-15 | Globalfoundries Inc. | Patterned magnetic shields for inductors and transformers |
WO2019066951A1 (en) * | 2017-09-29 | 2019-04-04 | Intel Corporation | MAGNETIC CORE / ENVELOPE PARTICLES FOR INDUCER NETWORKS |
US11538617B2 (en) | 2018-06-29 | 2022-12-27 | Intel Corporation | Integrated magnetic core inductors on glass core substrates |
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US20060088971A1 (en) * | 2004-10-27 | 2006-04-27 | Crawford Ankur M | Integrated inductor and method of fabrication |
US7463131B1 (en) * | 2005-01-24 | 2008-12-09 | National Semiconductor Corporation | Patterned magnetic layer on-chip inductor |
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