JP2018530924A5 - - Google Patents
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- JP2018530924A5 JP2018530924A5 JP2018519445A JP2018519445A JP2018530924A5 JP 2018530924 A5 JP2018530924 A5 JP 2018530924A5 JP 2018519445 A JP2018519445 A JP 2018519445A JP 2018519445 A JP2018519445 A JP 2018519445A JP 2018530924 A5 JP2018530924 A5 JP 2018530924A5
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- JP
- Japan
- Prior art keywords
- layer
- substrate
- disposed
- semiconductor device
- buffer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 claims 26
- 239000000758 substrate Substances 0.000 claims 15
- 239000011800 void material Substances 0.000 claims 10
- 238000000926 separation method Methods 0.000 claims 3
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20150144060 | 2015-10-15 | ||
| KR10-2015-0144060 | 2015-10-15 | ||
| PCT/KR2016/011576 WO2017065566A1 (ko) | 2015-10-15 | 2016-10-14 | 반도체 소자, 반도체 소자 패키지, 및 이를 포함하는 조명 시스템 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018530924A JP2018530924A (ja) | 2018-10-18 |
| JP2018530924A5 true JP2018530924A5 (enExample) | 2019-10-24 |
| JP7224020B2 JP7224020B2 (ja) | 2023-02-17 |
Family
ID=58517467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018519445A Active JP7224020B2 (ja) | 2015-10-15 | 2016-10-14 | 半導体素子、半導体素子パッケージ、およびこれを含む照明システム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10340417B2 (enExample) |
| EP (1) | EP3364465B1 (enExample) |
| JP (1) | JP7224020B2 (enExample) |
| KR (1) | KR102271159B1 (enExample) |
| CN (1) | CN108352425B (enExample) |
| WO (1) | WO2017065566A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI630729B (zh) * | 2017-08-28 | 2018-07-21 | 友達光電股份有限公司 | 發光裝置 |
| KR102611981B1 (ko) * | 2017-10-19 | 2023-12-11 | 삼성전자주식회사 | 발광 장치 및 그 제조 방법 |
| US12289934B2 (en) | 2019-06-21 | 2025-04-29 | Lg Electronics Inc. | Display device using micro LED, and method for manufacturing same |
| US12132151B2 (en) * | 2019-06-27 | 2024-10-29 | Lumileds Llc | Nanocone arrays for enhancing light outcoupling and package efficiency |
| CN111864019B (zh) * | 2020-07-10 | 2021-11-30 | 武汉大学 | 一种具有嵌入式散射层的倒装发光二极管及其制备方法 |
| US20220199857A1 (en) * | 2020-12-17 | 2022-06-23 | Seoul Viosys Co., Ltd. | Unit pixel and displaying apparatus including the unit pixel |
| US12419140B2 (en) * | 2021-05-17 | 2025-09-16 | Seoul Viosys Co., Ltd. | UV light emitting diode |
| US20230034456A1 (en) * | 2021-07-30 | 2023-02-02 | Seoul Viosys Co., Ltd. | Light emitting module and display apparatus by using the same |
| WO2024098281A1 (zh) * | 2022-11-09 | 2024-05-16 | 厦门三安光电有限公司 | 发光器件、发光器件的制作方法及发光装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7227192B2 (en) * | 2004-03-31 | 2007-06-05 | Tekcove Co., Ltd | Light-emitting device and manufacturing process of the light-emitting device |
| JP4993435B2 (ja) * | 2006-03-14 | 2012-08-08 | スタンレー電気株式会社 | 窒化物半導体発光素子の製造方法 |
| KR101316115B1 (ko) * | 2007-03-29 | 2013-10-11 | 서울바이오시스 주식회사 | 수직형 발광 다이오드 제조방법 |
| JP5330040B2 (ja) * | 2009-03-17 | 2013-10-30 | 株式会社東芝 | 半導体素子、半導体装置、半導体ウェーハ及び半導体結晶の成長方法 |
| KR101166132B1 (ko) | 2010-04-13 | 2012-07-23 | 한국광기술원 | 희생층을 구비한 발광다이오드 및 그 제조방법 |
| WO2011155010A1 (ja) * | 2010-06-07 | 2011-12-15 | 創光科学株式会社 | エピタキシャル成長用テンプレートの作製方法及び窒化物半導体装置 |
| JP5277270B2 (ja) * | 2010-07-08 | 2013-08-28 | 学校法人立命館 | 結晶成長方法および半導体素子 |
| JP5919284B2 (ja) | 2010-10-12 | 2016-05-18 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | エピ応力が低減された発光デバイス |
| KR20120079392A (ko) | 2011-01-04 | 2012-07-12 | (주)세미머티리얼즈 | 반도체 발광소자의 제조방법 |
| CN102760803B (zh) | 2011-04-29 | 2015-08-26 | 清华大学 | 发光二极管 |
| KR101804408B1 (ko) * | 2011-09-05 | 2017-12-04 | 엘지이노텍 주식회사 | 발광소자 |
| KR20130072825A (ko) | 2011-12-22 | 2013-07-02 | 엘지이노텍 주식회사 | 발광소자 |
| KR20130099529A (ko) | 2012-02-29 | 2013-09-06 | 엘지이노텍 주식회사 | 발광소자 |
| KR20140034665A (ko) | 2012-09-12 | 2014-03-20 | 엘지이노텍 주식회사 | 발광소자 |
| US9000415B2 (en) * | 2012-09-12 | 2015-04-07 | Lg Innotek Co., Ltd. | Light emitting device |
| KR102141815B1 (ko) * | 2012-11-02 | 2020-08-06 | 리켄 | 자외선 발광 다이오드 및 그 제조 방법 |
| CN104603932A (zh) * | 2012-12-21 | 2015-05-06 | 松下知识产权经营株式会社 | 电子部件封装件及其制造方法 |
| KR102094471B1 (ko) | 2013-10-07 | 2020-03-27 | 삼성전자주식회사 | 질화물 반도체층의 성장방법 및 이에 의하여 형성된 질화물 반도체 |
| JP2015216352A (ja) * | 2014-04-24 | 2015-12-03 | 国立研究開発法人理化学研究所 | 紫外発光ダイオードおよびそれを備える電気機器 |
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2016
- 2016-10-14 US US15/768,282 patent/US10340417B2/en active Active
- 2016-10-14 JP JP2018519445A patent/JP7224020B2/ja active Active
- 2016-10-14 CN CN201680060204.1A patent/CN108352425B/zh active Active
- 2016-10-14 WO PCT/KR2016/011576 patent/WO2017065566A1/ko not_active Ceased
- 2016-10-14 EP EP16855783.3A patent/EP3364465B1/en active Active
- 2016-10-14 KR KR1020187013813A patent/KR102271159B1/ko not_active Expired - Fee Related