JP2018517245A - 無電極単一cwレーザ駆動キセノンランプ - Google Patents
無電極単一cwレーザ駆動キセノンランプ Download PDFInfo
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- 229910052724 xenon Inorganic materials 0.000 title claims description 28
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 title claims description 28
- 238000000034 method Methods 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 230000009977 dual effect Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims 9
- 230000002688 persistence Effects 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 26
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 4
- 229910052776 Thorium Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000012671 ceramic insulating material Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/54—Igniting arrangements, e.g. promoting ionisation for starting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/025—Associated optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/12—Selection of substances for gas fillings; Specified operating pressure or temperature
- H01J61/16—Selection of substances for gas fillings; Specified operating pressure or temperature having helium, argon, neon, krypton, or xenon as the principle constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/30—Vessels; Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
- H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Plasma Technology (AREA)
Abstract
【解決手段】 この装置は、連続波(CW)レーザ光源からレーザビームを受けるように構成される。密閉チャンバは、イオン性媒体を含むように構成される。チャンバは、レーザビームをチャンバ、プラズマ持続領域、及びチャンバから高輝度光を放射するように構成された高輝度光出射ウィンドウに収容するように構成された、チャンバ内面の壁部内に配された入射ウィンドウを有する。レーザ光源から入射ウィンドウを通じたチャンバ内の集光領域へのCWレーザビームの進路は真っ直ぐである。入射ウィンドウは、レーザビームを所定の容量内に集光するように構成され、プラズマは、CWレーザビームにより、任意で、チャンバ内に全体が配置された非電極点火剤の加熱により、点火されるように構成される。
【選択図】 図3
Description
本出願は、2015年5月14日出願の米国特許出願シリアル番号14/712,304号、表題「Electrodeless Single CW Laser Driven Xenon Lamp」の利益を主張するものであり、その内容全体を参照として組み込む。
Claims (19)
- 連続波レーザ光源からレーザビームを受信するように構成された点火促進された無電極シールド高輝度照明装置であって、
イオン性媒体を含むように構成された密閉チャンバを備え、前記チャンバはさらに、
前記レーザビームを前記チャンバ内に収容するように構成されたチャンバ内面の壁部内に配された入射ウィンドウと、
プラズマ持続領域と、
前記チャンバから高輝度光を放射するように構成された高輝度光出射ウィンドウと、を備え、
前記レーザ光源から前記入射ウィンドウを通じた前記チャンバ内の集光領域への前記CWレーザビームの進路が真っ直ぐであり、前記入射ウィンドウは、1〜15平方ミクロンのFWHMビームウェストと6〜18ミクロン以下のレイリー長とを備えた領域に前記レーザビームを集光するように構成され、前記プラズマは、前記CWレーザビームによって点火されるように構成される、シールド高輝度照明装置。 - 前記入射ウィンドウは、前記チャンバ内のレンズ集光領域に前記レーザビームを集光するように構成されたレンズをさらに備える、請求項1に記載のシールド高輝度照明装置。
- 前記入射ウィンドウは、平坦ウィンドウを備える、請求項1に記載のシールド高輝度照明装置。
- 前記チャンバ内のレンズ集光領域に前記レーザビームを集光するように構成された、前記レーザ光源と前記入射ウィンドウとの間の前記進路内に配されたレンズをさらに備える、請求項3に記載のシールド高輝度照明装置。
- 前記密閉チャンバは、石英本体を備える、請求項1に記載のシールド高輝度照明装置。
- 前記プラズマ持続領域から前記出射ウィンドウに高輝度光を反射するように構成された一体型反射性チャンバ内面をさらに備える、請求項1に記載のシールド高輝度照明装置。
- 前記一体型反射性チャンバ内面の前記壁部内に配されたビューイングウィンドウをさらに備える、請求項1に記載のシールド高輝度照明装置。
- 前記ビューイングウィンドウは、前記密閉チャンバの外部から前記プラズマ持続領域に可視進路を提供するように構成される、請求項7に記載のシールド高輝度照明装置。
- 前記反射性内面は、前記レーザビームに対して略透明である、請求項1に記載のシールド高輝度照明装置。
- 前記チャンバは、一体放物型又は楕円型リフレクタを備えた、セラミック又は金属の本体とするCermaxランプに包囲される、請求項1に記載のシールド高輝度照明装置。
- 双曲型内側リフレクタをさらに備える、請求項10に記載のシールド高輝度照明装置。
- 前記チャンバは、デュアルウィンドウ円筒形キセノンランプに包囲される、請求項1に記載のシールド高輝度照明装置。
- イオン性媒体は、キセノンガスを備える、請求項1に記載のシールド高輝度照明装置。
- 前記プラズマ持続領域と前記出射ウィンドウとの間に配された前記チャンバ内に配された非一体型凸状双曲型リフレクタをさらに備え、
前記非一体型リフレクタは、前記プラズマ持続領域から前記一体型反射性チャンバ内面に高輝度光を反射するように構成され、
前記非一体型は、前記プラズマ持続領域から前記出射ウィンドウに非可視光を反射するように構成される、請求項1に記載のシールド高輝度照明装置。 - 密閉チャンバを備える点火電極を備えないシールドビームキセノンランプを作動させる方法であって、
前記チャンバの外側に配された連続波レーザ光源から前記チャンバ内の集光領域にエネルギーを受けるように構成されたウィンドウを提供するステップと、
前記チャンバの圧力を所定の圧力レベルに設定するステップと、
前記チャンバ内に300立方ミクロン以下の所定容量を有する前記チャンバ内の集光領域に前記レーザ光源を集光するステップと、
プラズマを形成するために、前記レーザ光源で前記チャンバ内の前記イオン性媒体を点火するステップと、
前記CWレーザ光源で前記チャンバ内の前記プラズマを持続させるステップと、を備える方法。 - 前記所定の圧力レベルは、少なくとも300psiであり、前記CWレーザ光源は、少なくとも200ワットの出力レベルを有する、請求項15に記載の方法。
- 前記集光領域に隣接した前記チャンバ内に全体的に配されたパッシブ非電極点火剤を配置するステップをさらに備え、
前記パッシブ非電極点火剤は、電気的接続を備えず、
前記第1の圧力レベルは、少なくとも300psiであり、前記CWレーザ光源は、少なくとも125ワットの出力レベルを有する、請求項15に記載の方法。 - 前記パッシブ非電極点火剤は、トリエーテッドタングステンを備える、請求項17に記載の方法。
- 前記パッシブ非電極点火剤は、Kr−85を備える、請求項17に記載の方法。
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JP2021083931A JP2021141073A (ja) | 2015-05-14 | 2021-05-18 | 無電極単一cwレーザ駆動キセノンランプ |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/712,304 US9576785B2 (en) | 2015-05-14 | 2015-05-14 | Electrodeless single CW laser driven xenon lamp |
US14/712,304 | 2015-05-14 | ||
PCT/US2016/032022 WO2016183287A1 (en) | 2015-05-14 | 2016-05-12 | Electrodeless single cw laser driven xenon lamp |
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JP2018517245A true JP2018517245A (ja) | 2018-06-28 |
JP6887388B2 JP6887388B2 (ja) | 2021-06-16 |
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JP2021083931A Pending JP2021141073A (ja) | 2015-05-14 | 2021-05-18 | 無電極単一cwレーザ駆動キセノンランプ |
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Country Status (4)
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US (1) | US9576785B2 (ja) |
EP (1) | EP3295470B1 (ja) |
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Cited By (2)
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---|---|---|---|---|
JP2020505733A (ja) * | 2017-01-19 | 2020-02-20 | エクセリタス テクノロジーズ コーポレイション | 無電極単一低電力cwレーザー駆動プラズマランプ |
JP2022511803A (ja) * | 2018-12-06 | 2022-02-01 | エクセリタス テクノロジーズ シンガポール プライヴェート リミテッド | レーザ維持プラズマ及び内視鏡検査光源 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9646816B2 (en) | 2013-12-06 | 2017-05-09 | Hamamatsu Photonics K.K. | Light source device |
US9984865B2 (en) * | 2013-12-06 | 2018-05-29 | Hamamatsu Photonics K.K. | Light-emitting sealed body |
US10057973B2 (en) * | 2015-05-14 | 2018-08-21 | Excelitas Technologies Corp. | Electrodeless single low power CW laser driven plasma lamp |
US10109473B1 (en) * | 2018-01-26 | 2018-10-23 | Excelitas Technologies Corp. | Mechanically sealed tube for laser sustained plasma lamp and production method for same |
US11862922B2 (en) * | 2020-12-21 | 2024-01-02 | Energetiq Technology, Inc. | Light emitting sealed body and light source device |
US11367989B1 (en) | 2020-12-21 | 2022-06-21 | Hamamatsu Photonics K.K. | Light emitting unit and light source device |
US11972931B2 (en) | 2020-12-21 | 2024-04-30 | Hamamatsu Photonics K.K. | Light emitting sealed body, light emitting unit, and light source device |
US11587781B2 (en) | 2021-05-24 | 2023-02-21 | Hamamatsu Photonics K.K. | Laser-driven light source with electrodeless ignition |
CN113690126A (zh) * | 2021-08-19 | 2021-11-23 | 华中科技大学 | 一种激光维持等离子体宽带光源及应用 |
JP2023054442A (ja) * | 2021-10-04 | 2023-04-14 | 浜松ホトニクス株式会社 | 発光封体、光源装置、及び発光封体の駆動方法 |
JP2023054443A (ja) * | 2021-10-04 | 2023-04-14 | 浜松ホトニクス株式会社 | 発光封体及び光源装置 |
JP2023054439A (ja) * | 2021-10-04 | 2023-04-14 | 浜松ホトニクス株式会社 | 発光封体及び光源装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60202936A (ja) * | 1983-11-01 | 1985-10-14 | ベブ・カ−ル・ツアイス・イエ−ナ | 光学装置に用いる輻射線源 |
JP2009532829A (ja) * | 2006-03-31 | 2009-09-10 | エナジェティック・テクノロジー・インコーポレーテッド | レーザ駆動の光源 |
US20100032590A1 (en) * | 2008-08-06 | 2010-02-11 | Cymer, Inc. | Debris protection system having a magnetic field for an EUV light source |
JP2010170994A (ja) * | 2008-12-27 | 2010-08-05 | Ushio Inc | 光源装置 |
JP2013519211A (ja) * | 2010-02-09 | 2013-05-23 | エナジェティック・テクノロジー・インコーポレーテッド | レーザー駆動の光源 |
Family Cites Families (104)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3515491A (en) | 1966-10-27 | 1970-06-02 | Gilford Instr Labor Inc | Fluid sample flow cell |
US3502929A (en) | 1967-07-14 | 1970-03-24 | Varian Associates | High intensity arc lamp |
US3619588A (en) | 1969-11-18 | 1971-11-09 | Ca Atomic Energy Ltd | Highly collimated light beams |
US3808496A (en) | 1971-01-25 | 1974-04-30 | Varian Associates | High intensity arc lamp |
FR2139635B1 (ja) | 1971-05-28 | 1973-05-25 | Anvar | |
US3900803A (en) | 1974-04-24 | 1975-08-19 | Bell Telephone Labor Inc | Lasers optically pumped by laser-produced plasma |
US3946332A (en) | 1974-06-13 | 1976-03-23 | Samis Michael A | High power density continuous wave plasma glow jet laser system |
US4152625A (en) | 1978-05-08 | 1979-05-01 | The United States Of America As Represented By The Secretary Of The Army | Plasma generation and confinement with continuous wave lasers |
JPS56126250A (en) | 1980-03-10 | 1981-10-03 | Mitsubishi Electric Corp | Light source device of micro wave discharge |
US4420690A (en) | 1982-03-05 | 1983-12-13 | Bio-Rad Laboratories, Inc. | Spectrometric microsampling gas cells |
JPS6074626A (ja) | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | ウエハー処理方法及び装置 |
JPS60105946A (ja) | 1983-11-15 | 1985-06-11 | Fuji Electric Corp Res & Dev Ltd | 赤外線ガス分析計 |
JPS61193358A (ja) | 1985-02-22 | 1986-08-27 | Canon Inc | 光源装置 |
US4646215A (en) | 1985-08-30 | 1987-02-24 | Gte Products Corporation | Lamp reflector |
US4866517A (en) | 1986-09-11 | 1989-09-12 | Hoya Corp. | Laser plasma X-ray generator capable of continuously generating X-rays |
US4789788A (en) | 1987-01-15 | 1988-12-06 | The Boeing Company | Optically pumped radiation source |
US4780608A (en) | 1987-08-24 | 1988-10-25 | The United States Of America As Represented By The United States Department Of Energy | Laser sustained discharge nozzle apparatus for the production of an intense beam of high kinetic energy atomic species |
US4901330A (en) | 1988-07-20 | 1990-02-13 | Amoco Corporation | Optically pumped laser |
JPH061688B2 (ja) | 1990-10-05 | 1994-01-05 | 浜松ホトニクス株式会社 | 白色パルス光発生装置 |
US5747813A (en) | 1992-06-16 | 1998-05-05 | Kla-Tencop. Corporation | Broadband microspectro-reflectometer |
DE4222130C2 (de) | 1992-07-06 | 1995-12-14 | Heraeus Noblelight Gmbh | Hochleistungsstrahler |
JPH08299951A (ja) | 1995-04-28 | 1996-11-19 | Shinko Pantec Co Ltd | 紫外線照射装置 |
US6288780B1 (en) | 1995-06-06 | 2001-09-11 | Kla-Tencor Technologies Corp. | High throughput brightfield/darkfield wafer inspection system using advanced optical techniques |
US5760910A (en) | 1995-06-07 | 1998-06-02 | Masimo Corporation | Optical filter for spectroscopic measurement and method of producing the optical filter |
US5905268A (en) | 1997-04-21 | 1999-05-18 | Spectronics Corporation | Inspection lamp with thin-film dichroic filter |
JPH10300671A (ja) | 1997-04-22 | 1998-11-13 | Yokogawa Electric Corp | 微粒子計測装置 |
CA2339545A1 (en) * | 1998-06-08 | 1999-12-16 | Karlheinz Strobl | Efficient light engine systems, components and methods of manufacture |
US6324255B1 (en) | 1998-08-13 | 2001-11-27 | Nikon Technologies, Inc. | X-ray irradiation apparatus and x-ray exposure apparatus |
US6285743B1 (en) | 1998-09-14 | 2001-09-04 | Nikon Corporation | Method and apparatus for soft X-ray generation |
US6414436B1 (en) | 1999-02-01 | 2002-07-02 | Gem Lighting Llc | Sapphire high intensity discharge projector lamp |
US6778272B2 (en) | 1999-03-02 | 2004-08-17 | Renesas Technology Corp. | Method of processing a semiconductor device |
JP4332648B2 (ja) | 1999-04-07 | 2009-09-16 | レーザーテック株式会社 | 光源装置 |
US6298865B1 (en) | 1999-04-20 | 2001-10-09 | Richard S. Brown | Apparatus and methods for washing the cored areas of lettuce heads during harvest |
JP2001042433A (ja) * | 1999-06-08 | 2001-02-16 | Karlheinz Strobl | 高性能光エンジンシステム、その構成要素、並びにその製造方法 |
US20060250090A9 (en) | 2000-03-27 | 2006-11-09 | Charles Guthrie | High intensity light source |
US6541924B1 (en) | 2000-04-14 | 2003-04-01 | Macquarie Research Ltd. | Methods and systems for providing emission of incoherent radiation and uses therefor |
US6972421B2 (en) | 2000-06-09 | 2005-12-06 | Cymer, Inc. | Extreme ultraviolet light source |
US7429818B2 (en) | 2000-07-31 | 2008-09-30 | Luxim Corporation | Plasma lamp with bulb and lamp chamber |
US6737809B2 (en) | 2000-07-31 | 2004-05-18 | Luxim Corporation | Plasma lamp with dielectric waveguide |
US6417625B1 (en) | 2000-08-04 | 2002-07-09 | General Atomics | Apparatus and method for forming a high pressure plasma discharge column |
JP3439435B2 (ja) | 2000-08-10 | 2003-08-25 | エヌイーシーマイクロ波管株式会社 | 光源装置、照明装置および投写型表示装置 |
TW525417B (en) | 2000-08-11 | 2003-03-21 | Ind Tech Res Inst | Composite through hole structure |
KR100369096B1 (ko) | 2000-08-25 | 2003-01-24 | 태원전기산업 (주) | 무전극 방전등용 전구 |
US6760406B2 (en) | 2000-10-13 | 2004-07-06 | Jettec Ab | Method and apparatus for generating X-ray or EUV radiation |
FR2823949A1 (fr) | 2001-04-18 | 2002-10-25 | Commissariat Energie Atomique | Procede et dispositif de generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie |
US7598509B2 (en) | 2004-11-01 | 2009-10-06 | Cymer, Inc. | Laser produced plasma EUV light source |
US7439530B2 (en) | 2005-06-29 | 2008-10-21 | Cymer, Inc. | LPP EUV light source drive laser system |
DE10151080C1 (de) | 2001-10-10 | 2002-12-05 | Xtreme Tech Gmbh | Einrichtung und Verfahren zum Erzeugen von extrem ultravioletter (EUV-)Strahlung auf Basis einer Gasentladung |
JP4320999B2 (ja) | 2002-02-04 | 2009-08-26 | 株式会社ニコン | X線発生装置及び露光装置 |
JP4111487B2 (ja) | 2002-04-05 | 2008-07-02 | ギガフォトン株式会社 | 極端紫外光源装置 |
JP4364482B2 (ja) | 2002-04-23 | 2009-11-18 | 株式会社キーエンス | 光学シンボル読取装置用光学ユニット |
JP3912171B2 (ja) | 2002-04-26 | 2007-05-09 | ウシオ電機株式会社 | 光放射装置 |
JP4298336B2 (ja) | 2002-04-26 | 2009-07-15 | キヤノン株式会社 | 露光装置、光源装置及びデバイス製造方法 |
CN1653297B (zh) | 2002-05-08 | 2010-09-29 | 佛森技术公司 | 高效固态光源及其使用和制造方法 |
US7050149B2 (en) | 2002-06-11 | 2006-05-23 | Nikon Corporation | Exposure apparatus and exposure method |
US6908218B2 (en) | 2002-06-18 | 2005-06-21 | Casio Computer Co., Ltd. | Light source unit and projector type display device using the light source unit |
US6762849B1 (en) | 2002-06-19 | 2004-07-13 | Novellus Systems, Inc. | Method for in-situ film thickness measurement and its use for in-situ control of deposited film thickness |
US6788404B2 (en) | 2002-07-17 | 2004-09-07 | Kla-Tencor Technologies Corporation | Inspection system with multiple illumination sources |
US6762424B2 (en) | 2002-07-23 | 2004-07-13 | Intel Corporation | Plasma generation |
US7294839B2 (en) | 2002-10-08 | 2007-11-13 | Ric Investements, Inc. | Low volume sample cell and gas monitoring system using same |
JP2006508346A (ja) | 2002-11-28 | 2006-03-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 光学検査システム及び当該検査システムに用いられる放射源 |
US6972419B2 (en) | 2003-02-24 | 2005-12-06 | Intel Corporation | Extreme ultraviolet radiation imaging |
JP4052155B2 (ja) | 2003-03-17 | 2008-02-27 | ウシオ電機株式会社 | 極端紫外光放射源及び半導体露光装置 |
US7034320B2 (en) | 2003-03-20 | 2006-04-25 | Intel Corporation | Dual hemispherical collectors |
US7217940B2 (en) | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Collector for EUV light source |
WO2004097520A2 (en) | 2003-04-24 | 2004-11-11 | The Regents Of The University Of Michigan | Fiber laser-based euv-lithography |
US6960872B2 (en) | 2003-05-23 | 2005-11-01 | Goldeneye, Inc. | Illumination systems utilizing light emitting diodes and light recycling to enhance output radiance |
US6973164B2 (en) | 2003-06-26 | 2005-12-06 | University Of Central Florida Research Foundation, Inc. | Laser-produced plasma EUV light source with pre-pulse enhancement |
JP4535732B2 (ja) | 2004-01-07 | 2010-09-01 | 株式会社小松製作所 | 光源装置及びそれを用いた露光装置 |
US7087914B2 (en) | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
US7212553B2 (en) | 2004-03-16 | 2007-05-01 | Coherent, Inc. | Wavelength stabilized diode-laser array |
US7390116B2 (en) | 2004-04-23 | 2008-06-24 | Anvik Corporation | High-brightness, compact illuminator with integrated optical elements |
JP2006010675A (ja) | 2004-05-27 | 2006-01-12 | National Institute Of Advanced Industrial & Technology | 紫外光の発生方法および紫外光源装置 |
FR2871622B1 (fr) | 2004-06-14 | 2008-09-12 | Commissariat Energie Atomique | Dispositif de generation de lumiere dans l'extreme ultraviolet et application a une source de lithographie par rayonnement dans l'extreme ultraviolet |
US7307375B2 (en) | 2004-07-09 | 2007-12-11 | Energetiq Technology Inc. | Inductively-driven plasma light source |
US7291981B2 (en) * | 2004-07-13 | 2007-11-06 | Perkinelmer, Inc | Short arc lamp with improved manufacturability |
US7427167B2 (en) | 2004-09-16 | 2008-09-23 | Illumination Management Solutions Inc. | Apparatus and method of using LED light sources to generate a unitized beam |
US7295739B2 (en) | 2004-10-20 | 2007-11-13 | Kla-Tencor Technologies Corporation | Coherent DUV illumination for semiconductor wafer inspection |
US7355191B2 (en) | 2004-11-01 | 2008-04-08 | Cymer, Inc. | Systems and methods for cleaning a chamber window of an EUV light source |
US7679276B2 (en) | 2004-12-09 | 2010-03-16 | Perkinelmer Singapore Pte Ltd. | Metal body arc lamp |
US7141927B2 (en) | 2005-01-07 | 2006-11-28 | Perkinelmer Optoelectronics | ARC lamp with integrated sapphire rod |
US7482609B2 (en) | 2005-02-28 | 2009-01-27 | Cymer, Inc. | LPP EUV light source drive laser system |
US7652430B1 (en) | 2005-07-11 | 2010-01-26 | Kla-Tencor Technologies Corporation | Broadband plasma light sources with cone-shaped electrode for substrate processing |
JP2007239603A (ja) * | 2006-03-08 | 2007-09-20 | Nissan Motor Co Ltd | 可変圧縮比エンジン |
US7989786B2 (en) | 2006-03-31 | 2011-08-02 | Energetiq Technology, Inc. | Laser-driven light source |
US7614767B2 (en) | 2006-06-09 | 2009-11-10 | Abl Ip Holding Llc | Networked architectural lighting with customizable color accents |
JP5351757B2 (ja) * | 2006-07-07 | 2013-11-27 | コーニンクレッカ フィリップス エヌ ヴェ | ガス放電ランプ |
US7872729B2 (en) | 2006-08-31 | 2011-01-18 | Christoph Noelscher | Filter system for light source |
US7744241B2 (en) | 2007-06-13 | 2010-06-29 | Ylx, Ltd. | High brightness light source using light emitting devices of different wavelengths and wavelength conversion |
JP5387876B2 (ja) * | 2008-03-06 | 2014-01-15 | 株式会社Ihi | レーザ共振器 |
US7872245B2 (en) | 2008-03-17 | 2011-01-18 | Cymer, Inc. | Systems and methods for target material delivery in a laser produced plasma EUV light source |
JP2010087388A (ja) | 2008-10-02 | 2010-04-15 | Ushio Inc | 露光装置 |
JP5448775B2 (ja) | 2008-12-16 | 2014-03-19 | ギガフォトン株式会社 | 極端紫外光源装置 |
DE112010000850B4 (de) | 2009-02-13 | 2017-04-06 | Kla-Tencor Corp. | Verfahren und Vorrichtung zum Aufrechterhalten und Erzeugen eines Plasmas |
JP5252586B2 (ja) | 2009-04-15 | 2013-07-31 | ウシオ電機株式会社 | レーザー駆動光源 |
JP4611431B1 (ja) * | 2009-06-29 | 2011-01-12 | 西進商事株式会社 | レーザー照射装置及びレーザー加工方法 |
KR100934323B1 (ko) * | 2009-07-06 | 2009-12-29 | 정풍기 | 세라믹 아크튜브를 이용한 제논 램프 |
JP2011049513A (ja) * | 2009-07-30 | 2011-03-10 | Ushio Inc | 光源装置 |
DE102011113681A1 (de) | 2011-09-20 | 2013-03-21 | Heraeus Noblelight Gmbh | Lampeneinheit für die Erzeugung optischer Strahlung |
GB2497949A (en) * | 2011-12-22 | 2013-07-03 | Sharp Kk | Headlight system with adaptive beam function |
SG11201407782QA (en) | 2012-06-12 | 2015-01-29 | Asml Netherlands Bv | Photon source, metrology apparatus, lithographic system and device manufacturing method |
US9341752B2 (en) | 2012-11-07 | 2016-05-17 | Asml Netherlands B.V. | Viewport protector for an extreme ultraviolet light source |
JP5501435B2 (ja) * | 2012-12-27 | 2014-05-21 | 川崎重工業株式会社 | レーザ多点着火装置 |
US20150262808A1 (en) * | 2014-03-17 | 2015-09-17 | Weifeng Wang | Light Source Driven by Laser |
-
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- 2015-05-14 US US14/712,304 patent/US9576785B2/en active Active
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- 2021-05-18 JP JP2021083931A patent/JP2021141073A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60202936A (ja) * | 1983-11-01 | 1985-10-14 | ベブ・カ−ル・ツアイス・イエ−ナ | 光学装置に用いる輻射線源 |
JP2009532829A (ja) * | 2006-03-31 | 2009-09-10 | エナジェティック・テクノロジー・インコーポレーテッド | レーザ駆動の光源 |
US20100032590A1 (en) * | 2008-08-06 | 2010-02-11 | Cymer, Inc. | Debris protection system having a magnetic field for an EUV light source |
JP2010170994A (ja) * | 2008-12-27 | 2010-08-05 | Ushio Inc | 光源装置 |
JP2013519211A (ja) * | 2010-02-09 | 2013-05-23 | エナジェティック・テクノロジー・インコーポレーテッド | レーザー駆動の光源 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020505733A (ja) * | 2017-01-19 | 2020-02-20 | エクセリタス テクノロジーズ コーポレイション | 無電極単一低電力cwレーザー駆動プラズマランプ |
JP2022189855A (ja) * | 2017-01-19 | 2022-12-22 | エクセリタス テクノロジーズ コーポレイション | 無電極単一低電力cwレーザー駆動プラズマランプ |
JP2022511803A (ja) * | 2018-12-06 | 2022-02-01 | エクセリタス テクノロジーズ シンガポール プライヴェート リミテッド | レーザ維持プラズマ及び内視鏡検査光源 |
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