JP2018504588A5 - - Google Patents

Download PDF

Info

Publication number
JP2018504588A5
JP2018504588A5 JP2017530286A JP2017530286A JP2018504588A5 JP 2018504588 A5 JP2018504588 A5 JP 2018504588A5 JP 2017530286 A JP2017530286 A JP 2017530286A JP 2017530286 A JP2017530286 A JP 2017530286A JP 2018504588 A5 JP2018504588 A5 JP 2018504588A5
Authority
JP
Japan
Prior art keywords
resistor
output node
node
output
membrane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017530286A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018504588A (ja
JP6474492B2 (ja
Filing date
Publication date
Priority claimed from PCT/EP2014/077230 external-priority patent/WO2015086680A1/en
Priority claimed from EP15171268.4A external-priority patent/EP3032235B1/en
Application filed filed Critical
Publication of JP2018504588A publication Critical patent/JP2018504588A/ja
Publication of JP2018504588A5 publication Critical patent/JP2018504588A5/ja
Application granted granted Critical
Publication of JP6474492B2 publication Critical patent/JP6474492B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

JP2017530286A 2014-12-10 2015-12-08 半導体圧力センサ Expired - Fee Related JP6474492B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EPPCT/EP2014/077230 2014-12-10
PCT/EP2014/077230 WO2015086680A1 (en) 2013-12-11 2014-12-10 Semiconductor pressure sensor
EP15171268.4A EP3032235B1 (en) 2014-12-10 2015-06-09 Semiconductor pressure sensor
EP15171268.4 2015-06-09
PCT/EP2015/079010 WO2016091896A1 (en) 2014-12-10 2015-12-08 Semiconductor pressure sensor

Publications (3)

Publication Number Publication Date
JP2018504588A JP2018504588A (ja) 2018-02-15
JP2018504588A5 true JP2018504588A5 (enExample) 2018-09-27
JP6474492B2 JP6474492B2 (ja) 2019-02-27

Family

ID=53274454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017530286A Expired - Fee Related JP6474492B2 (ja) 2014-12-10 2015-12-08 半導体圧力センサ

Country Status (5)

Country Link
EP (1) EP3032235B1 (enExample)
JP (1) JP6474492B2 (enExample)
KR (1) KR20170095218A (enExample)
CN (1) CN107003198B (enExample)
WO (1) WO2016091896A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3358309B1 (en) 2017-02-06 2019-04-24 Melexis Technologies SA Method and circuit for biasing and readout of resistive sensor structure
US10704969B2 (en) 2017-11-21 2020-07-07 The Boeing Company Stress sensor
US10983024B2 (en) * 2017-11-28 2021-04-20 Daeyang Electric Co., Ltd. Semiconductor pressure sensor
WO2020058091A1 (en) 2018-09-18 2020-03-26 Unilever Plc Method of chemical monitoring the fat removal from surfaces
CN109374158B (zh) * 2018-12-14 2024-08-13 华景传感科技（无锡）有限公司 一种压力传感器
CN113227954B (zh) 2018-12-20 2025-01-24 深圳纽迪瑞科技开发有限公司 压力感应装置、压力感应方法及电子终端
US11189536B2 (en) 2018-12-31 2021-11-30 Micron Technology, Inc. Method and apparatus for on-chip stress detection
DE102021200720B4 (de) 2021-01-27 2023-08-03 Infineon Technologies Ag Transistorbasierter stress-sensor und verfahren zum ermitteln einer gradienten-kompensierten mechanischen spannungskomponente
EP4421468B1 (en) * 2023-02-27 2025-02-12 Melexis Technologies NV Pressure sensor resistor configuration for stress compensation
EP4567393A1 (en) * 2023-12-04 2025-06-11 TE Connectivity Solutions GmbH Piezoresistive sensor element and piezoresistive pressure sensor with minimized long-term drift

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217780A (en) * 1975-07-04 1977-02-09 Hitachi Ltd Pressure convertor with semi-conductor elements
CA1186163A (en) 1982-01-04 1985-04-30 James B. Starr Semiconductor pressure transducer
JPS60128673A (ja) 1983-12-16 1985-07-09 Hitachi Ltd 半導体感圧装置
US4777826A (en) * 1985-06-20 1988-10-18 Rosemount Inc. Twin film strain gauge system
WO1996022515A1 (en) * 1995-01-19 1996-07-25 Honeywell Inc. Apparatus for detection of a diaphragm rupture in a pressure sensor
JPH08279621A (ja) * 1995-04-03 1996-10-22 Motorola Inc 平衡圧力センサとその方法
JP4568982B2 (ja) * 2000-10-06 2010-10-27 株式会社デンソー 物理量検出装置
JP3891037B2 (ja) * 2002-05-21 2007-03-07 株式会社デンソー 半導体圧力センサおよび半導体圧力センサ用の半導体ウェハ
JP3915715B2 (ja) * 2003-03-07 2007-05-16 株式会社デンソー 半導体圧力センサ
ATE470844T1 (de) * 2004-09-24 2010-06-15 Grundfos As Drucksensor

Similar Documents

Publication Publication Date Title
JP2018504588A5 (enExample)
JP6474492B2 (ja) 半導体圧力センサ
CN105829849B (zh) 半导体压力传感器
US10317297B2 (en) Semiconductor pressure sensor
JP2012173287A5 (enExample)
JPWO2014002387A1 (ja) ホール起電力補正装置及びホール起電力補正方法
CN102190274A (zh) 微机电系统装置以及运动感测方法
JP2014505894A (ja) 圧力センサの素子に対する応力効果の補償
CN107478992B (zh) 电压检测与判断电路和具有其的动力电池系统
TW201643442A (zh) 溫度補償電路以及感測裝置
CN101629970A (zh) 用于加速度传感器的误差校正方法和误差校正装置
US9742349B2 (en) PV junction unit, PV junction box and method for monitoring current in PV string
RU174159U1 (ru) Интегральный чувствительный элемент преобразователя давления на основе биполярного транзистора
JP5866496B2 (ja) 半導体圧力センサ
US9116064B2 (en) Structure of built-in self-test for pressure tester and method thereof
CN116400766A (zh) 带隙参考补偿电路
JP2014077730A (ja) 磁界測定装置及び磁界測定方法
JP6269936B2 (ja) 集積回路
US20140241400A1 (en) Rotating 3-wire resistance temperature detection excitation current sources and method
de Oliveira Coraucci et al. Silicon multi-stage current-mode piezoresistive pressure sensor with analog temperature compensation
TW201250259A (en) Voltage detection method and voltage detector circuit
TW201430325A (zh) 主動式應力感測裝置
JP2012184995A (ja) 磁気検出装置
JP2015155797A (ja) サーモパイル、及びそれを用いたサーモパイル式センサ並びに赤外線センサ
JP2020085885A (ja) 検出装置、検出装置の制御方法、及び電荷電圧変換回路