JP2018152498A - 半導体装置及び全波整流回路 - Google Patents
半導体装置及び全波整流回路 Download PDFInfo
- Publication number
- JP2018152498A JP2018152498A JP2017048619A JP2017048619A JP2018152498A JP 2018152498 A JP2018152498 A JP 2018152498A JP 2017048619 A JP2017048619 A JP 2017048619A JP 2017048619 A JP2017048619 A JP 2017048619A JP 2018152498 A JP2018152498 A JP 2018152498A
- Authority
- JP
- Japan
- Prior art keywords
- well
- type region
- impurity diffusion
- structures
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 239000012535 impurity Substances 0.000 description 103
- 238000009792 diffusion process Methods 0.000 description 87
- 229910021332 silicide Inorganic materials 0.000 description 49
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 49
- 239000000758 substrate Substances 0.000 description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 27
- 229910052814 silicon oxide Inorganic materials 0.000 description 27
- 238000002513 implantation Methods 0.000 description 22
- 150000002500 ions Chemical class 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 238000002955 isolation Methods 0.000 description 14
- 238000004088 simulation Methods 0.000 description 13
- 238000000137 annealing Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000011084 recovery Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Rectifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】半導体装置の一態様には、複数の第1の構造105が含まれ、第1の構造105のそれぞれに、第1のN型領域111、112及び113と、第1のN型領域111、112及び113に取り囲まれたP型領域122、123a及び101aと、P型領域122、123a及び101aに取り囲まれた第2のN型領域115cと、が含まれる。第1のN型領域111、112及び113とP型領域122、123a及び101aとが結線され、複数の第1の構造105が並列に接続されて1個のダイオードが構成されている。
【選択図】図5
Description
先ず、基板電流の発生を抑制することが可能なトリプルウェル構造のダイオードの参考例について説明する。この参考例では、Pウェル内のP型不純物拡散層及びN型不純物拡散層の最大寸法を小さく抑える観点から、フィンガー構造が採用されている。つまり、P型基板の表面に複数のN型不純物拡散層が互いに平行に形成され、これらが共通に接続されてカソードとして用いられる。図1は、参考例における不純物拡散層及びウェルのレイアウトを示す図である。図2は、参考例の構成を示す断面図である。図2は、図1中のI−I線に沿った断面図に相当する。
次に、第1の実施形態について説明する。第1の実施形態は、ダイオードを含む半導体装置に関する。図4は、第1の実施形態に係る半導体装置における不純物拡散層及びウェルのレイアウトを示す図である。図5は、第1の実施形態に係る半導体装置の構成を示す断面図である。図5は、図4中のI−I線に沿った断面図に相当する。図6は、第1の実施形態に係る半導体装置に含まれる第1の構造を示す断面図である。
次に、第2の実施形態について説明する。第2の実施形態は、ダイオードを含む半導体装置に関する。図8は、第2の実施形態に係る半導体装置における不純物拡散層及びウェルのレイアウトを示す図である。図9は、第2の実施形態に係る半導体装置の構成を示す断面図である。図9は、図8中のI−I線に沿った断面図に相当する。図10は、第2の実施形態に係る半導体装置に含まれる第1の構造を示す断面図である。
複数の第1の構造を有し、
前記第1の構造のそれぞれが、
第1のN型領域と、
前記第1のN型領域に取り囲まれたP型領域と、
前記P型領域に取り囲まれた第2のN型領域と、
を有し、
前記第1のN型領域と前記P型領域とが結線され、
前記複数の第1の構造が並列に接続されて1個のダイオードが構成されていることを特徴とする半導体装置。
前記複数の第1の構造の間で、
前記第1のN型領域及び前記P型領域の対同士が共通に接続され、
前記第2のN型領域同士が共通に接続されていることを特徴とする付記1に記載の半導体装置。
前記複数の第1の構造のうち隣り合う第1の構造の間で前記第1のN型領域の一部が共有されていることを特徴とする付記1又は2に記載の半導体装置。
前記第1のN型領域と前記P型領域とを結線する配線を有することを特徴とする付記1乃至3のいずれか1項に記載の半導体装置。
ブリッジ型に接続された4個のダイオードを有し、
前記4個のダイオードのうちの少なくとも1個が複数の第1の構造を有し、
前記第1の構造のそれぞれが、
第1のN型領域と、
前記第1のN型領域に取り囲まれたP型領域と、
前記P型領域に取り囲まれた第2のN型領域と、
を有し、
前記第1のN型領域と前記P型領域とが結線され、
前記複数の第1の構造が並列に接続されて1個のダイオードが構成されていることを特徴とする全波整流回路。
前記4個のダイオードが前記複数の第1の構造を有し、
前記4個のダイオードの各々において、
前記第1のN型領域と前記P型領域とが結線され、
前記複数の第1の構造が並列に接続されて1個のダイオードが構成されていることを特徴とする付記5に記載の全波整流回路。
入力信号の周波数が10MHz以上であることを特徴とする付記5又は6に記載の全波整流回路。
前記複数の第1の構造の間で、
前記第1のN型領域及び前記P型領域の対同士が共通に接続され、
前記第2のN型領域同士が共通に接続されていることを特徴とする付記5乃至7のいずれか1項に記載の全波整流回路。
前記複数の第1の構造のうち隣り合う第1の構造の間で前記第1のN型領域の一部が共有されていることを特徴とする付記5乃至8のいずれか1項に記載の全波整流回路。
前記第1のN型領域と前記P型領域とを結線する配線を有することを特徴とする付記5乃至9のいずれか1項に記載の全波整流回路。
105、205:第1の構造
110、210:N型領域
115c、215c:N型不純物拡散層
120、220:P型領域
142c、152a、242c、252a:配線
Claims (6)
- 複数の第1の構造を有し、
前記第1の構造のそれぞれが、
第1のN型領域と、
前記第1のN型領域に取り囲まれたP型領域と、
前記P型領域に取り囲まれた第2のN型領域と、
を有し、
前記第1のN型領域と前記P型領域とが結線され、
前記複数の第1の構造が並列に接続されて1個のダイオードが構成されていることを特徴とする半導体装置。 - 前記複数の第1の構造の間で、
前記第1のN型領域及び前記P型領域の対同士が共通に接続され、
前記第2のN型領域同士が共通に接続されていることを特徴とする請求項1に記載の半導体装置。 - 前記複数の第1の構造のうち隣り合う第1の構造の間で前記第1のN型領域の一部が共有されていることを特徴とする請求項1又は2に記載の半導体装置。
- ブリッジ型に接続された4個のダイオードを有し、
前記4個のダイオードのうちの少なくとも1個が複数の第1の構造を有し、
前記第1の構造のそれぞれが、
第1のN型領域と、
前記第1のN型領域に取り囲まれたP型領域と、
前記P型領域に取り囲まれた第2のN型領域と、
を有し、
前記第1のN型領域と前記P型領域とが結線され、
前記複数の第1の構造が並列に接続されて1個のダイオードが構成されていることを特徴とする全波整流回路。 - 前記4個のダイオードが前記複数の第1の構造を有し、
前記4個のダイオードの各々において、
前記第1のN型領域と前記P型領域とが結線され、
前記複数の第1の構造が並列に接続されて1個のダイオードが構成されていることを特徴とする請求項4に記載の全波整流回路。 - 入力信号の周波数が10MHz以上であることを特徴とする請求項4又は5に記載の全波整流回路。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017048619A JP6807783B2 (ja) | 2017-03-14 | 2017-03-14 | 半導体装置及び全波整流回路 |
US15/902,333 US10651272B2 (en) | 2017-03-14 | 2018-02-22 | Semiconductor device and full-wave rectifier circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017048619A JP6807783B2 (ja) | 2017-03-14 | 2017-03-14 | 半導体装置及び全波整流回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018152498A true JP2018152498A (ja) | 2018-09-27 |
JP6807783B2 JP6807783B2 (ja) | 2021-01-06 |
Family
ID=63519542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017048619A Active JP6807783B2 (ja) | 2017-03-14 | 2017-03-14 | 半導体装置及び全波整流回路 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10651272B2 (ja) |
JP (1) | JP6807783B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6807783B2 (ja) * | 2017-03-14 | 2021-01-06 | ユナイテッド・セミコンダクター・ジャパン株式会社 | 半導体装置及び全波整流回路 |
US10930747B2 (en) | 2019-06-04 | 2021-02-23 | Nxp B.V. | Semiconductor device with an encircled electrode |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3740581A (en) * | 1972-03-08 | 1973-06-19 | Hughes Aircraft Co | Precision switching circuit for analog signals |
FR2582417B1 (fr) * | 1985-05-24 | 1987-07-24 | Guillemot Gilbert | Dispositif electronique de commande d'une pompe submersible |
JPH06224214A (ja) | 1993-01-22 | 1994-08-12 | Sony Corp | 縦型バイポーラトランジスタおよび横型バイポーラトランジスタ |
TW358283B (en) * | 1996-06-26 | 1999-05-11 | Oki Electric Ind Co Ltd | Remote testing device |
JPH11121459A (ja) | 1997-10-13 | 1999-04-30 | Nec Corp | 半導体装置及びそのコレクタ抵抗低減方法 |
JP3367500B2 (ja) | 2000-03-15 | 2003-01-14 | 日本電気株式会社 | 半導体装置 |
JP2005044956A (ja) | 2003-07-28 | 2005-02-17 | Renesas Technology Corp | 半導体装置 |
JP4569105B2 (ja) | 2003-12-25 | 2010-10-27 | 富士電機システムズ株式会社 | 半導体装置 |
JP2005236084A (ja) | 2004-02-20 | 2005-09-02 | Toshiba Corp | 縦型バイポーラトランジスタ及びその製造方法 |
JP2006100308A (ja) | 2004-09-28 | 2006-04-13 | Sanyo Electric Co Ltd | 半導体装置、全波整流回路、半波整流回路 |
JP4519716B2 (ja) | 2005-06-02 | 2010-08-04 | 富士通セミコンダクター株式会社 | 整流回路用ダイオードを有する半導体装置 |
US7606043B2 (en) * | 2006-06-28 | 2009-10-20 | Nokia Corporation | Rocker key in a portable electronic device |
US20080023767A1 (en) * | 2006-07-27 | 2008-01-31 | Voldman Steven H | High voltage electrostatic discharge protection devices and electrostatic discharge protection circuits |
KR101712629B1 (ko) | 2010-08-19 | 2017-03-06 | 삼성전자 주식회사 | Esd 보호 소자와 그 제조 방법 및 그 보호 소자를 포함하는 전기전자장치 |
JP2015103605A (ja) | 2013-11-22 | 2015-06-04 | 株式会社メガチップス | Esd保護回路 |
JP6807783B2 (ja) * | 2017-03-14 | 2021-01-06 | ユナイテッド・セミコンダクター・ジャパン株式会社 | 半導体装置及び全波整流回路 |
-
2017
- 2017-03-14 JP JP2017048619A patent/JP6807783B2/ja active Active
-
2018
- 2018-02-22 US US15/902,333 patent/US10651272B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10651272B2 (en) | 2020-05-12 |
JP6807783B2 (ja) | 2021-01-06 |
US20180269286A1 (en) | 2018-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8692289B2 (en) | Fast turn on silicon controlled rectifiers for ESD protection | |
US7615826B2 (en) | Electrostatic discharge protection semiconductor structure | |
US9412805B2 (en) | Integrated circuits including inductors | |
TWI271846B (en) | Semiconductor structure and method for ESD protection | |
US9343458B2 (en) | Isolation structure for ESD device | |
US8525300B2 (en) | Tunable ESD protection device | |
TW200828569A (en) | Latch-up free vertical TVS diode array structure using trench isolation | |
TW201203508A (en) | Apparatus and method for electronic circuit protection | |
US9299694B2 (en) | Stacked and tunable power fuse | |
TWI300617B (en) | Low substrate loss inductor | |
KR101345893B1 (ko) | 바이어스 웰을 갖는 고전압 저항 | |
WO2012154881A1 (en) | Apparatus for electrostatic discharge protection | |
US11721691B2 (en) | Device having bipolar junction transistors and finFET transistors on the same substrate | |
TW201724454A (zh) | 包括分接頭單元的電路 | |
JP6807783B2 (ja) | 半導体装置及び全波整流回路 | |
KR100954919B1 (ko) | 반도체 소자용 인덕터 및 그 제조 방법 | |
US9831327B2 (en) | Electrostatic discharge protection devices and methods of forming the same | |
US7057241B2 (en) | Reverse-biased P/N wells isolating a CMOS inductor from the substrate | |
US8941959B2 (en) | ESD protection apparatus | |
US9337181B2 (en) | Semiconductor device and method of manufacturing same | |
JP4504664B2 (ja) | 静電気放電保護素子及び静電気放電保護回路 | |
JP3880943B2 (ja) | 静電気放電保護素子及び半導体装置 | |
TWI844403B (zh) | 積體電路元件及其製造方法 | |
US20240113099A1 (en) | Integrated circuit protection device and method | |
TW202416511A (zh) | 積體電路元件及其製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200219 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20200611 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20200612 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201030 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201130 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201208 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6807783 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |