JP2018129528A - 高密度有機ブリッジデバイスおよび方法 - Google Patents
高密度有機ブリッジデバイスおよび方法 Download PDFInfo
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- JP2018129528A JP2018129528A JP2018070970A JP2018070970A JP2018129528A JP 2018129528 A JP2018129528 A JP 2018129528A JP 2018070970 A JP2018070970 A JP 2018070970A JP 2018070970 A JP2018070970 A JP 2018070970A JP 2018129528 A JP2018129528 A JP 2018129528A
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 90
- 229920000620 organic polymer Polymers 0.000 claims description 78
- 238000004377 microelectronic Methods 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000002356 single layer Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 25
- 239000004593 Epoxy Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Abstract
【解決手段】アセンブリ300において、有機パッケージ基板302は、埋め込まれた有機ブリッジ304を有する。有機ブリッジ304は、ダイ318、319を相互に接続可能とする接続構造を有する。有機ブリッジ304は、金属配線層310、金属パッド層316および交互に配置された複数の誘電体層312を有するが、基板層を有さない。数層のみを有する有機ブリッジでは、有機パッケージ基板302の最上層または上側の数層内に埋め込まれる。
【選択図】図3
Description
本願は、2012年12月20日出願の米国出願13/722,203号の優先権を主張するものであり、上記出願の内容は、参照により本明細書に組み込まれる。
[項目1]
有機ポリマー基板と、
前記基板に埋め込まれた有機ポリマーブリッジと、
前記有機ポリマーブリッジの第1ロケーションに配置された第1接続構造、および、前記有機ポリマーブリッジの第2ロケーションに配置された第2接続構造と、
前記有機ポリマーブリッジにおいて、前記第1接続構造と前記第2接続構造とを接続する導電経路と、を備えるマイクロエレクトロニクスパッケージ。
[項目2]
前記有機ポリマー基板は、凹部を有し、
前記有機ポリマーブリッジは、有機ポリマーを使用して前記凹部に埋め込まれている、項目1に記載のマイクロエレクトロニクスパッケージ。
[項目3]
前記有機ポリマー基板および前記有機ポリマーブリッジは、同じ有機ポリマーから形成されている、項目2に記載のマイクロエレクトロニクスパッケージ。
[項目4]
前記有機ポリマー基板および前記有機ポリマーブリッジは、異なる有機ポリマーから形成されている、項目2に記載のマイクロエレクトロニクスパッケージ。
[項目5]
前記有機ポリマー基板は、第1配線幅および第1配線間隔を有する設計規則の第1セットを使用して形成され、
前記有機ポリマーブリッジは、第2配線幅および第2配線間隔を有する設計規則の第2セットを使用して形成される、項目1から4の何れか一項に記載のマイクロエレクトロニクスパッケージ。
[項目6]
前記第1配線幅は、前記第2配線幅より大きく、
前記第1配線間隔は、前記第2配線間隔よりも大きい、項目5に記載のマイクロエレクトロニクスパッケージ。
[項目7]
前記有機ポリマーブリッジの全厚みは、約20μm未満である、項目1から6の何れか一項に記載のマイクロエレクトロニクスパッケージ。
[項目8]
複数のダイを接続する有機ブリッジであって、
前記有機ブリッジは、
金属配線層と、
金属パッド層と、
交互に配置された複数の有機ポリマー誘電体層と、を備え、
実質的にシリコンで形成された層を備えない、有機ブリッジ。
[項目9]
全ての層を合わせた厚みが、約30μm未満である項目8に記載の有機ブリッジ。
[項目10]
全ての層を合わせた厚みが、約15μmである項目8に記載の有機ブリッジ。
[項目11]
前記金属パッド層は、複数の接続構造を有する、項目8から10の何れか一項に記載の有機ブリッジ。
[項目12]
前記複数の接続構造のうちの第1の接続構造は、第1ダイを接続し、
前記複数の接続構造のうちの第2の接続構造は、第2ダイを接続する、項目11に記載の有機ブリッジ。
[項目13]
更なる金属層と、
更なる交互に配置された有機ポリマー誘電体層と、を更に備える項目8から12の何れか一項に記載の有機ブリッジ。
[項目14]
有機ポリマーパッケージ基板と、
有機ポリマーブリッジと、を備えるマイクロエレクトロニクスパッケージであって、
前記有機ポリマーブリッジは、
金属パッド層と、
金属配線層と、
交互に配置された複数の有機ポリマー誘電体層と、を有し、
前記有機ポリマーブリッジは、前記有機ポリマーパッケージ基板に埋め込まれている、マイクロエレクトロニクスパッケージ。
[項目15]
前記有機ポリマーブリッジは、約15μmから約20μmの厚みを有する、項目14に記載のマイクロエレクトロニクスパッケージ。
[項目16]
金属配線層と、
金属パッド層と、
交互に配置された複数の有機ポリマー誘電体層と、を有する有機ブリッジを準備する段階と、
凹部が形成された有機パッケージ基板を準備する段階と、
有機ポリマーを使用して、前記有機ブリッジを、前記有機パッケージの前記凹部に接合する段階と、を備える方法。
[項目17]
前記有機ブリッジの全ての層を合わせた厚みは、約15μm未満である、項目16に記載の方法。
[項目18]
前記有機ブリッジの全ての層を合わせた厚みは、約20μm未満である、項目16に記載の方法。
[項目19]
前記金属パッド層は、複数の接続構造を有し、
前記方法は更に、
前記複数の接続構造のうちの第1接続構造に第1ダイを接合する段階と、
前記複数の接続構造のうちの第2接続構造に第2ダイを接合する段階とを備え、
前記第1ダイを接合する段階および前記第2ダイを接合する段階は、熱圧着ボンディングにより行われる、項目16から18の何れか一項に記載の方法。
[項目20]
前記有機ブリッジは、前記有機パッケージ基板の単層の層内に接合される、項目16から19の何れか一項に記載の方法。
Claims (20)
- 有機ポリマー基板と、
前記基板に埋め込まれた有機ポリマーブリッジと、
前記有機ポリマーブリッジの第1ロケーションに配置された第1接続構造、および、前記有機ポリマーブリッジの第2ロケーションに配置された第2接続構造と、
前記有機ポリマーブリッジにおいて、前記第1接続構造と前記第2接続構造とを接続する導電経路と、を備えるマイクロエレクトロニクスパッケージ。 - 前記有機ポリマー基板は、凹部を有し、
前記有機ポリマーブリッジは、有機ポリマーを使用して前記凹部に埋め込まれている、請求項1に記載のマイクロエレクトロニクスパッケージ。 - 前記有機ポリマー基板および前記有機ポリマーブリッジは、同じ有機ポリマーから形成されている、請求項2に記載のマイクロエレクトロニクスパッケージ。
- 前記有機ポリマー基板および前記有機ポリマーブリッジは、異なる有機ポリマーから形成されている、請求項2に記載のマイクロエレクトロニクスパッケージ。
- 前記有機ポリマー基板は、第1配線幅および第1配線間隔を有する設計規則の第1セットを使用して形成され、
前記有機ポリマーブリッジは、第2配線幅および第2配線間隔を有する設計規則の第2セットを使用して形成される、請求項1から4の何れか一項に記載のマイクロエレクトロニクスパッケージ。 - 前記第1配線幅は、前記第2配線幅より大きく、
前記第1配線間隔は、前記第2配線間隔よりも大きい、請求項5に記載のマイクロエレクトロニクスパッケージ。 - 前記有機ポリマーブリッジの全厚みは、約20μm未満である、請求項1から6の何れか一項に記載のマイクロエレクトロニクスパッケージ。
- 複数のダイを接続する有機ブリッジであって、
前記有機ブリッジは、
金属配線層と、
金属パッド層と、
交互に配置された複数の有機ポリマー誘電体層と、を備え、
実質的にシリコンで形成された層を備えない、有機ブリッジ。 - 全ての層を合わせた厚みが、約30μm未満である請求項8に記載の有機ブリッジ。
- 全ての層を合わせた厚みが、約15μmである請求項8に記載の有機ブリッジ。
- 前記金属パッド層は、複数の接続構造を有する、請求項8から10の何れか一項に記載の有機ブリッジ。
- 前記複数の接続構造のうちの第1の接続構造は、第1ダイを接続し、
前記複数の接続構造のうちの第2の接続構造は、第2ダイを接続する、請求項11に記載の有機ブリッジ。 - 更なる金属層と、
更なる交互に配置された有機ポリマー誘電体層と、を更に備える請求項8から12の何れか一項に記載の有機ブリッジ。 - 有機ポリマーパッケージ基板と、
有機ポリマーブリッジと、を備えるマイクロエレクトロニクスパッケージであって、
前記有機ポリマーブリッジは、
金属パッド層と、
金属配線層と、
交互に配置された複数の有機ポリマー誘電体層と、を有し、
前記有機ポリマーブリッジは、前記有機ポリマーパッケージ基板に埋め込まれている、マイクロエレクトロニクスパッケージ。 - 前記有機ポリマーブリッジは、約15μmから約20μmの厚みを有する、請求項14に記載のマイクロエレクトロニクスパッケージ。
- 金属配線層と、
金属パッド層と、
交互に配置された複数の有機ポリマー誘電体層と、を有する有機ブリッジを準備する段階と、
凹部が形成された有機パッケージ基板を準備する段階と、
有機ポリマーを使用して、前記有機ブリッジを、前記有機パッケージの前記凹部に接合する段階と、を備える方法。 - 前記有機ブリッジの全ての層を合わせた厚みは、約15μm未満である、請求項16に記載の方法。
- 前記有機ブリッジの全ての層を合わせた厚みは、約20μm未満である、請求項16に記載の方法。
- 前記金属パッド層は、複数の接続構造を有し、
前記方法は更に、
前記複数の接続構造のうちの第1接続構造に第1ダイを接合する段階と、
前記複数の接続構造のうちの第2接続構造に第2ダイを接合する段階とを備え、
前記第1ダイを接合する段階および前記第2ダイを接合する段階は、熱圧着ボンディングにより行われる、請求項16から18の何れか一項に記載の方法。 - 前記有機ブリッジは、前記有機パッケージ基板の単層の層内に接合される、請求項16から19の何れか一項に記載の方法。
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KR20160025536A (ko) | 2016-03-08 |
US9236366B2 (en) | 2016-01-12 |
SG2013093521A (en) | 2014-07-30 |
EP3273476A1 (en) | 2018-01-24 |
KR101593277B1 (ko) | 2016-02-11 |
JP6572495B2 (ja) | 2019-09-11 |
US20190019755A1 (en) | 2019-01-17 |
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US20170125349A1 (en) | 2017-05-04 |
EP2747136B1 (en) | 2019-11-20 |
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