JP2018115110A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2018115110A5 JP2018115110A5 JP2018051986A JP2018051986A JP2018115110A5 JP 2018115110 A5 JP2018115110 A5 JP 2018115110A5 JP 2018051986 A JP2018051986 A JP 2018051986A JP 2018051986 A JP2018051986 A JP 2018051986A JP 2018115110 A5 JP2018115110 A5 JP 2018115110A5
- Authority
- JP
- Japan
- Prior art keywords
- gan crystal
- gan
- crystal
- concentration
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910002601 GaN Inorganic materials 0.000 claims 19
- 238000004519 manufacturing process Methods 0.000 claims 6
- 125000004429 atoms Chemical group 0.000 claims 5
- 239000000969 carrier Substances 0.000 claims 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052731 fluorine Inorganic materials 0.000 claims 3
- 239000011737 fluorine Substances 0.000 claims 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 3
- 229910052740 iodine Inorganic materials 0.000 claims 2
- 239000011630 iodine Substances 0.000 claims 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 1
- KLGZELKXQMTEMM-UHFFFAOYSA-N hydride Chemical compound [H-] KLGZELKXQMTEMM-UHFFFAOYSA-N 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161552801P | 2011-10-28 | 2011-10-28 | |
| US61/552801 | 2011-10-28 | ||
| JP2012188099 | 2012-08-28 | ||
| JP2012188099 | 2012-08-28 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016146212A Division JP6494571B2 (ja) | 2011-10-28 | 2016-07-26 | ＧａＮ結晶及びＧａＮ結晶からなる基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018115110A JP2018115110A (ja) | 2018-07-26 |
| JP2018115110A5 true JP2018115110A5 (fr) | 2018-11-29 |
| JP6493588B2 JP6493588B2 (ja) | 2019-04-03 |
Family
ID=50617629
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012236354A Pending JP2014062023A (ja) | 2011-10-28 | 2012-10-26 | 窒化物結晶の製造方法 |
| JP2013060287A Active JP5929801B2 (ja) | 2012-08-28 | 2013-03-22 | 窒化物結晶の製造方法 |
| JP2016146212A Active JP6494571B2 (ja) | 2011-10-28 | 2016-07-26 | ＧａＮ結晶及びＧａＮ結晶からなる基板 |
| JP2018051986A Active JP6493588B2 (ja) | 2011-10-28 | 2018-03-20 | 窒化物結晶の製造方法 |
Family Applications Before (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012236354A Pending JP2014062023A (ja) | 2011-10-28 | 2012-10-26 | 窒化物結晶の製造方法 |
| JP2013060287A Active JP5929801B2 (ja) | 2012-08-28 | 2013-03-22 | 窒化物結晶の製造方法 |
| JP2016146212A Active JP6494571B2 (ja) | 2011-10-28 | 2016-07-26 | ＧａＮ結晶及びＧａＮ結晶からなる基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (4) | JP2014062023A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6437736B2 (ja) * | 2014-05-09 | 2018-12-12 | 古河機械金属株式会社 | 自立基板の製造方法および自立基板 |
| CN113906169A (zh) * | 2019-05-30 | 2022-01-07 | 三菱化学株式会社 | GaN基板晶片及其制造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6773504B2 (en) * | 2001-04-12 | 2004-08-10 | Sumitomo Electric Industries, Ltd. | Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
| JP5159023B2 (ja) * | 2002-12-27 | 2013-03-06 | モーメンティブ・パフォーマンス・マテリアルズ・インク | 窒化ガリウム結晶、ホモエピタキシャル窒化ガリウムを基材とするデバイス、及びその製造方法 |
| US9279193B2 (en) * | 2002-12-27 | 2016-03-08 | Momentive Performance Materials Inc. | Method of making a gallium nitride crystalline composition having a low dislocation density |
| JP5356933B2 (ja) * | 2004-03-10 | 2013-12-04 | 三菱化学株式会社 | 窒化物結晶の製造装置 |
| WO2005122232A1 (fr) * | 2004-06-11 | 2005-12-22 | Ammono Sp. Z O.O. | Transistor a haute mobilite d'electrons (hemt) constitue de couches de nitrures d'elements du groupe xiii, et procede de fabrication dudit transistor |
| JP5454830B2 (ja) * | 2006-03-06 | 2014-03-26 | 三菱化学株式会社 | 超臨界溶媒を用いた結晶製造方法および結晶製造装置 |
| JP2008174439A (ja) * | 2006-12-21 | 2008-07-31 | Mitsubishi Chemicals Corp | 窒素元素とガリウム元素を含む粉末の製造方法、およびそれを利用した窒化ガリウム単結晶の製造方法 |
| JP2008297191A (ja) * | 2007-05-02 | 2008-12-11 | Sumitomo Electric Ind Ltd | 窒化ガリウム基板及び窒化ガリウム層の形成方法 |
| KR20100082769A (ko) * | 2007-10-05 | 2010-07-19 | 미쓰비시 가가꾸 가부시키가이샤 | 액화 암모니아의 충전 방법, 질화물 결정의 제조 방법, 및 질화물 결정 성장용 반응 용기 |
| JP4719788B2 (ja) * | 2008-12-26 | 2011-07-06 | 旭化成株式会社 | １３族元素窒素化合物結晶の製造方法 |
| US9192910B2 (en) * | 2009-01-08 | 2015-11-24 | Mitsubishi Chemical Corporation | Process for producing nitride crystal, nitride crystal and apparatus for producing same |
| JP5709122B2 (ja) * | 2009-02-20 | 2015-04-30 | 三菱化学株式会社 | アモノサーマル法および窒化物結晶 |
| JP5446622B2 (ja) * | 2009-06-29 | 2014-03-19 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶およびその製造方法 |
| JP2011153055A (ja) * | 2010-01-28 | 2011-08-11 | Asahi Kasei Corp | 窒化物単結晶の製造方法 |
| JP2012136422A (ja) * | 2010-12-27 | 2012-07-19 | Mitsubishi Chemicals Corp | 結晶製造方法 |
| JP5870887B2 (ja) * | 2011-09-30 | 2016-03-01 | 三菱化学株式会社 | 窒化物単結晶のアニール処理方法 |
| EP2771276A4 (fr) * | 2011-10-24 | 2015-06-24 | Univ California | Utilisation de métaux alcalino-terreux pour réduire l'incorporation d'impuretés dans un cristal de nitrure de groupe iii |
-
2012
- 2012-10-26 JP JP2012236354A patent/JP2014062023A/ja active Pending
-
2013
- 2013-03-22 JP JP2013060287A patent/JP5929801B2/ja active Active
-
2016
- 2016-07-26 JP JP2016146212A patent/JP6494571B2/ja active Active
-
2018
- 2018-03-20 JP JP2018051986A patent/JP6493588B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4926556B2 (ja) | 炭化珪素単結晶インゴットの製造方法及び炭化珪素単結晶基板 | |
| Hartmann et al. | Preparation of bulk AlN seeds by spontaneous nucleation of freestanding crystals | |
| Herro et al. | Seeded growth of AlN on N-and Al-polar< 0001> AlN seeds by physical vapor transport | |
| US20110220912A1 (en) | Semi-insulating Group III Metal Nitride and Method of Manufacture | |
| JP4585359B2 (ja) | 炭化珪素単結晶の製造方法 | |
| JP2015091740A5 (fr) | ||
| JP5031651B2 (ja) | 炭化珪素単結晶インゴットの製造方法 | |
| US10096470B2 (en) | Method of producing a silicon carbide single-crystal substrate by epitaxial growth of a SiC epitaxial film on a SiC substrate | |
| CN102618930A (zh) | 一种AlN晶体的制备方法 | |
| JP2018115110A5 (fr) | ||
| JP6097989B2 (ja) | 酸化ガリウム単結晶、及び、酸化ガリウム単結晶基板 | |
| Fu et al. | Toward Φ56 mm Al-polar AlN single crystals grown by the homoepitaxial PVT method | |
| CN105008598B (zh) | 碳化硅半导体装置的制造方法以及碳化硅半导体装置 | |
| JP2007277074A (ja) | 窒化アルミニウム単結晶の製造方法及び窒化アルミニウム単結晶 | |
| JP2013060328A (ja) | 炭化珪素結晶の製造方法 | |
| Sun et al. | The fabrication of AlN by hydride vapor phase epitaxy | |
| JP2021502944A (ja) | 少量のバナジウムをドーピングした半絶縁炭化ケイ素単結晶、基板、製造方法 | |
| JP6869077B2 (ja) | 炭化珪素単結晶インゴットの製造方法 | |
| JP2008056553A (ja) | 窒化アルミニウム単結晶 | |
| JP5865728B2 (ja) | 窒化アルミニウム結晶の製造方法 | |
| JP2014181178A5 (fr) | ||
| JP4673528B2 (ja) | 炭化珪素単結晶インゴットおよびその製造方法 | |
| JP2014218397A (ja) | 炭化珪素単結晶の製造方法 | |
| JP4867981B2 (ja) | ＧａＮ結晶の成長方法 | |
| JP2017154953A (ja) | 炭化珪素単結晶製造装置 |