JP2018093114A5 - - Google Patents

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Publication number
JP2018093114A5
JP2018093114A5 JP2016236918A JP2016236918A JP2018093114A5 JP 2018093114 A5 JP2018093114 A5 JP 2018093114A5 JP 2016236918 A JP2016236918 A JP 2016236918A JP 2016236918 A JP2016236918 A JP 2016236918A JP 2018093114 A5 JP2018093114 A5 JP 2018093114A5
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JP
Japan
Prior art keywords
metal layer
semiconductor chip
solder
emitter electrode
wire
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JP2016236918A
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English (en)
Japanese (ja)
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JP6860334B2 (ja
JP2018093114A (ja
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Priority to JP2016236918A priority Critical patent/JP6860334B2/ja
Priority claimed from JP2016236918A external-priority patent/JP6860334B2/ja
Priority to US15/688,572 priority patent/US20180158762A1/en
Publication of JP2018093114A publication Critical patent/JP2018093114A/ja
Publication of JP2018093114A5 publication Critical patent/JP2018093114A5/ja
Application granted granted Critical
Publication of JP6860334B2 publication Critical patent/JP6860334B2/ja
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JP2016236918A 2016-12-06 2016-12-06 半導体装置 Active JP6860334B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016236918A JP6860334B2 (ja) 2016-12-06 2016-12-06 半導体装置
US15/688,572 US20180158762A1 (en) 2016-12-06 2017-08-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016236918A JP6860334B2 (ja) 2016-12-06 2016-12-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2018093114A JP2018093114A (ja) 2018-06-14
JP2018093114A5 true JP2018093114A5 (enExample) 2019-03-14
JP6860334B2 JP6860334B2 (ja) 2021-04-14

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ID=62243791

Family Applications (1)

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JP2016236918A Active JP6860334B2 (ja) 2016-12-06 2016-12-06 半導体装置

Country Status (2)

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US (1) US20180158762A1 (enExample)
JP (1) JP6860334B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7059914B2 (ja) * 2018-12-12 2022-04-26 株式会社デンソー 半導体モジュール
JP7103256B2 (ja) * 2019-02-13 2022-07-20 株式会社デンソー 半導体装置
EP3955277A1 (en) 2020-08-10 2022-02-16 Infineon Technologies AG Semiconductor device and method for fabricating the same
WO2022160245A1 (zh) * 2021-01-29 2022-08-04 华为技术有限公司 集成电路封装件及其制备方法和终端
JP7704699B2 (ja) * 2022-03-09 2025-07-08 株式会社東芝 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8169062B2 (en) * 2002-07-02 2012-05-01 Alpha And Omega Semiconductor Incorporated Integrated circuit package for semiconductior devices with improved electric resistance and inductance
JP2005158871A (ja) * 2003-11-21 2005-06-16 Denso Corp パッケージ型半導体装置
JP4770533B2 (ja) * 2005-05-16 2011-09-14 富士電機株式会社 半導体装置の製造方法および半導体装置
DE102005054872B4 (de) * 2005-11-15 2012-04-19 Infineon Technologies Ag Vertikales Leistungshalbleiterbauelement, Halbleiterbauteil und Verfahren zu deren Herstellung
DE102006021959B4 (de) * 2006-05-10 2011-12-29 Infineon Technologies Ag Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung
US8680658B2 (en) * 2008-05-30 2014-03-25 Alpha And Omega Semiconductor Incorporated Conductive clip for semiconductor device package
JP5473733B2 (ja) * 2010-04-02 2014-04-16 株式会社日立製作所 パワー半導体モジュール
US9147637B2 (en) * 2011-12-23 2015-09-29 Infineon Technologies Ag Module including a discrete device mounted on a DCB substrate
JP5662565B2 (ja) * 2012-01-11 2015-02-04 パナソニックＩｐマネジメント株式会社 圧接型半導体装置及びその製造方法
US9385107B2 (en) * 2013-08-05 2016-07-05 Infineon Technologies Ag Multichip device including a substrate
CN105706236B (zh) * 2014-01-27 2019-03-01 三菱电机株式会社 电极端子、电力用半导体装置以及电力用半导体装置的制造方法
DE102014111908A1 (de) * 2014-08-20 2016-02-25 Infineon Technologies Austria Ag Hybrid-Leadframe und Verfahren zum Herstellen desselben
JP5925364B2 (ja) * 2015-05-11 2016-05-25 三菱電機株式会社 電力用半導体装置

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