JP5672305B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5672305B2 JP5672305B2 JP2012530656A JP2012530656A JP5672305B2 JP 5672305 B2 JP5672305 B2 JP 5672305B2 JP 2012530656 A JP2012530656 A JP 2012530656A JP 2012530656 A JP2012530656 A JP 2012530656A JP 5672305 B2 JP5672305 B2 JP 5672305B2
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- 239000004065 semiconductor Substances 0.000 title claims description 106
- 239000000758 substrate Substances 0.000 claims description 129
- 239000004020 conductor Substances 0.000 claims description 55
- 230000017525 heat dissipation Effects 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 239000000615 nonconductor Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 description 16
- 239000000463 material Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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Description
上記半導体素子は、電界効果トランジスタであり、放熱用基板の、上記一方の主面に対向する実装面上に形成された、ドレイン電極となる下面電極と、上記実装面に対向する面上に形成された、ソース電極となる上面電極とを備え、下面電極は、放熱用基板に形成された外部導体に電気的に接続される。
また、配線用基板の配線導体は、下面電極に外部導体を介して電気的に接続される第1の引出し部、および上面電極に電気的に接続される第2の引出し部を有する。
そして、配線用基板の配線導体によって与えられる信号の入出力のための電気的な流れが、放熱用基板の上記一方の主面に対向する他方の主面には至らず、第2の引出し部、上面電極、下面電極、外部導体、第1の引出し部を順次経由して生じるようにされたことを特徴としている。
2 半導体素子
4,34 放熱用基板
5 配線用基板
6 貫通孔
9 実装面
10 下面電極
11,12 上面電極
14 外部導体
15,16,22 接合用パッド
17,21,23 導電性接合材
27,28 ワイヤ
29 電子部品
35 金属板
36,37 セラミック絶縁層
Claims (8)
- 少なくとも一方の主面が電気絶縁体をもって構成され、かつ前記電気絶縁体をもって構成される前記一方の主面上に外部導体が形成された、放熱用基板と、
前記放熱用基板の前記一方の主面上に実装され、前記放熱用基板よりも低い熱伝導率を有し、かつ銀または銅を主成分とする配線導体が内部に形成された、配線用基板と、
前記放熱用基板の前記一方の主面上に実装された、動作時に発熱を生じる半導体素子と
を備え、
前記半導体素子は、電界効果トランジスタであり、前記放熱用基板の、前記一方の主面に対向する実装面上に形成された、ドレイン電極となる下面電極と、前記実装面に対向する面上に形成された、ソース電極となる上面電極とを備え、
前記下面電極は、前記放熱用基板に形成された前記外部導体に電気的に接続され、
前記配線導体は、前記下面電極に前記外部導体を介して電気的に接続される第1の引出し部、および前記上面電極に電気的に接続される第2の引出し部を有し、
前記配線用基板の前記配線導体によって与えられる信号の入出力のための電気的な流れが、前記放熱用基板の前記一方の主面に対向する他方の主面には至らず、前記第2の引出し部、前記上面電極、前記下面電極、前記外部導体、前記第1の引出し部を順次経由して生じるようにされた、
半導体装置。 - 前記配線用基板は主面方向に直交する方向に貫通する貫通穴を有し、前記半導体素子は前記貫通穴内に収容されている、請求項1に記載の半導体装置。
- 複数個の前記半導体素子を備え、前記配線用基板は複数個の前記貫通穴を有し、前記複数個の半導体素子の各々は前記複数個の貫通穴の各々内に収容されている、請求項2に記載の半導体装置。
- 前記上面電極はワイヤを介して前記第2の引出し部と電気的に接続されている、請求項1ないし3のいずれかに記載の半導体装置。
- 前記半導体素子は、耐熱温度が200℃以上である、請求項1ないし4のいずれかに記載の半導体装置。
- 前記半導体素子は、ベアタイプのものである、請求項1ないし5のいずれかに記載の半導体装置。
- 前記放熱用基板は、窒化アルミニウム基板、アルミナ基板、窒化珪素基板、または金属板の少なくとも一方主面にセラミックまたは樹脂からなる絶縁層が形成された金属ベース基板のいずれかからなり、前記配線用基板は、低温焼結セラミック基板または樹脂基板からなる、請求項1ないし6のいずれかに記載の半導体装置。
- 前記配線用基板の主面に実装された電子部品をさらに備える、請求項1ないし7のいずれかに記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012530656A JP5672305B2 (ja) | 2010-08-27 | 2011-08-22 | 半導体装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010190332 | 2010-08-27 | ||
JP2010190332 | 2010-08-27 | ||
JP2012530656A JP5672305B2 (ja) | 2010-08-27 | 2011-08-22 | 半導体装置 |
PCT/JP2011/068851 WO2012026418A1 (ja) | 2010-08-27 | 2011-08-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012026418A1 JPWO2012026418A1 (ja) | 2013-10-28 |
JP5672305B2 true JP5672305B2 (ja) | 2015-02-18 |
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DE102014219759A1 (de) * | 2014-09-30 | 2016-03-31 | Siemens Aktiengesellschaft | Leistungsmodul |
JP6305362B2 (ja) * | 2015-03-06 | 2018-04-04 | 三菱電機株式会社 | 電力用半導体モジュール |
EP3341965B1 (en) * | 2016-02-24 | 2019-04-24 | ABB Schweiz AG | Power module based on a multi-layer circuit board |
WO2018030192A1 (ja) * | 2016-08-10 | 2018-02-15 | 株式会社村田製作所 | セラミック電子部品 |
TWI611538B (zh) * | 2016-10-25 | 2018-01-11 | 旭德科技股份有限公司 | 封裝載板及其製作方法 |
WO2018179538A1 (ja) * | 2017-03-29 | 2018-10-04 | 株式会社村田製作所 | パワーモジュール及びパワーモジュールの製造方法 |
JP6741164B2 (ja) * | 2017-09-07 | 2020-08-19 | 株式会社村田製作所 | 回路ブロック集合体 |
WO2019198199A1 (ja) * | 2018-04-12 | 2019-10-17 | 三菱電機株式会社 | 半導体装置 |
CN110798991B (zh) * | 2018-08-01 | 2021-11-16 | 宏启胜精密电子(秦皇岛)有限公司 | 埋嵌式基板及其制作方法,及具有该埋嵌式基板的电路板 |
CN109148411B (zh) * | 2018-08-15 | 2020-06-16 | 乐健科技(珠海)有限公司 | 散热基板及其制备方法 |
JP2020178057A (ja) * | 2019-04-19 | 2020-10-29 | シチズン時計株式会社 | 回路基板及びその回路基板を用いた発光装置 |
CN112259507B (zh) * | 2020-10-21 | 2024-03-08 | 北京轩宇空间科技有限公司 | 一种异质集成的系统级封装结构及封装方法 |
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US9030005B2 (en) | 2015-05-12 |
WO2012026418A1 (ja) | 2012-03-01 |
US20140070394A1 (en) | 2014-03-13 |
CN103081099A (zh) | 2013-05-01 |
JPWO2012026418A1 (ja) | 2013-10-28 |
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