JP2005276968A - パワー半導体装置 - Google Patents
パワー半導体装置 Download PDFInfo
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- JP2005276968A JP2005276968A JP2004086035A JP2004086035A JP2005276968A JP 2005276968 A JP2005276968 A JP 2005276968A JP 2004086035 A JP2004086035 A JP 2004086035A JP 2004086035 A JP2004086035 A JP 2004086035A JP 2005276968 A JP2005276968 A JP 2005276968A
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- heat
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- heat radiating
- semiconductor chip
- cooler
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 230000005855 radiation Effects 0.000 claims abstract description 13
- 229920006015 heat resistant resin Polymers 0.000 abstract description 8
- 239000000463 material Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000002411 adverse Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】放熱板8を、半導体チップ1が接合される放熱部8aと、主配線電極3,4が接合される放熱部8bとに分離して構成する。放熱部8aと放熱部8bは、耐熱樹脂9を介して互いの側面が対向するように接合する。半導体チップ1から発生する熱が、放熱部8aから放熱部8bに伝達するのを防止できるので、主配線電極3,4の温度上昇を抑えることができる。
【選択図】図1
Description
図1,2を参照して、本実施の形態1に係るパワー半導体装置の構成について説明する。図1は、本発明の実施の形態1に係るパワー半導体装置の中核部分を示す断面図である。図2は、主配線電極3,4の位置関係を示すための上面図である。ここで図1は、図2のA−A線断面図に対応している。
Tb=Tf+((Rbc2+Rcf2)/(Rjb+Rbc2+Rcf2))・(Tj-Tf)・・・(1)
と表される。
図5は、本実施の形態に係るパワー半導体装置の中核部分を示す断面図である。本実施の形態においては、冷却器11が、放熱部8aの裏主面に接続された冷却器(第1冷却部)11aと放熱部8bの裏主面に接続された冷却器(第2冷却部)11bとに分離した構造となっている。その他の構成は実施の形態1と同様であり、同一の構成には同一の符号を付し、重複する説明は省略する。
図6,7を参照して、本実施の形態3に係るパワー半導体装置の構成について説明する。図6は、実施の形態3に係るパワー半導体装置の中核部分を示す断面図である。図7は、図6の上面図を示している。また図6は、図7のB−B線断面図に対応している。実施の形態1と同一の構成には同一の符号を付し、重複する説明は省略する。
Claims (6)
- 放熱板と、
前記放熱板の表主面上に絶縁部材を介して接合された半導体チップと、
前記放熱板の表主面上に接合された主配線電極と、
を備えるパワー半導体装置であって、
前記放熱板は、
前記半導体チップが接合された第1放熱部と、
前記主配線電極が接合された第2放熱部と、
を備え、
前記第1放熱部と前記第2放熱部とが所定間隔離れて配置されていることを特徴とするパワー半導体装置。 - 前記第1放熱部と前記第2放熱部とが、耐熱部材を介して接合されていることを特徴とする請求項1に記載のパワー半導体装置。
- 前記主配線電極は放熱部をその一部に備え、
前記放熱部に対応した冷却器、
をさらに備えることを特徴とする請求項1又は請求項2に記載のパワー半導体装置。 - 前記放熱板の裏主面に接合された冷却器、
をさらに備えることを特徴とする請求項1から請求項3の何れかに記載のパワー半導体装置。 - 前記冷却器は、
前記第1放熱部の裏主面に接合された第1冷却器と、
前記第2放熱部の裏主面に接合された第2冷却器と、
を備えることを特徴とする請求項4に記載のパワー半導体装置。 - 放熱板と、
前記放熱板の表主面上に絶縁部材を介して接合された半導体チップと、
前記放熱板の表主面上に接合された主配線電極と、
前記放熱板の裏主面に接合された冷却器と、
を備えるパワー半導体装置であって、
前記主配線電極は放熱部をその一部に備え、
前記放熱部に対応した冷却器、
をさらに備えることを特徴とするパワー半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004086035A JP4794822B2 (ja) | 2004-03-24 | 2004-03-24 | パワー半導体装置 |
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---|---|---|---|
JP2004086035A JP4794822B2 (ja) | 2004-03-24 | 2004-03-24 | パワー半導体装置 |
Related Child Applications (1)
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---|---|---|---|
JP2009261859A Division JP5182274B2 (ja) | 2009-11-17 | 2009-11-17 | パワー半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005276968A true JP2005276968A (ja) | 2005-10-06 |
JP4794822B2 JP4794822B2 (ja) | 2011-10-19 |
Family
ID=35176326
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004086035A Expired - Lifetime JP4794822B2 (ja) | 2004-03-24 | 2004-03-24 | パワー半導体装置 |
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JP (1) | JP4794822B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8384211B2 (en) | 2008-05-08 | 2013-02-26 | Toyota Jidosha Kabushiki Kaisha | Semiconductor apparatus with improved efficiency of thermal radiation |
JP2014033119A (ja) * | 2012-08-06 | 2014-02-20 | Mitsubishi Electric Corp | 半導体装置 |
JP2016157786A (ja) * | 2015-02-24 | 2016-09-01 | 三菱電機株式会社 | 放熱構造体 |
WO2021166917A1 (ja) * | 2020-02-18 | 2021-08-26 | 株式会社Flosfia | 半導体装置および結晶成長方法 |
DE102020127606A1 (de) | 2020-10-20 | 2022-04-21 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung mit einer Wärmeleiteinrichtung und Verfahren zu ihrer Herstellung |
WO2022130523A1 (ja) * | 2020-12-16 | 2022-06-23 | 三菱電機株式会社 | 半導体装置、電力変換装置、および移動体 |
-
2004
- 2004-03-24 JP JP2004086035A patent/JP4794822B2/ja not_active Expired - Lifetime
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8384211B2 (en) | 2008-05-08 | 2013-02-26 | Toyota Jidosha Kabushiki Kaisha | Semiconductor apparatus with improved efficiency of thermal radiation |
JP2014033119A (ja) * | 2012-08-06 | 2014-02-20 | Mitsubishi Electric Corp | 半導体装置 |
JP2016157786A (ja) * | 2015-02-24 | 2016-09-01 | 三菱電機株式会社 | 放熱構造体 |
WO2021166917A1 (ja) * | 2020-02-18 | 2021-08-26 | 株式会社Flosfia | 半導体装置および結晶成長方法 |
DE102020127606A1 (de) | 2020-10-20 | 2022-04-21 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung mit einer Wärmeleiteinrichtung und Verfahren zu ihrer Herstellung |
DE102020127606B4 (de) | 2020-10-20 | 2023-11-02 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung mit einer Wärmeleiteinrichtung und Verfahren zu ihrer Herstellung |
WO2022130523A1 (ja) * | 2020-12-16 | 2022-06-23 | 三菱電機株式会社 | 半導体装置、電力変換装置、および移動体 |
CN116601764A (zh) * | 2020-12-16 | 2023-08-15 | 三菱电机株式会社 | 半导体装置、电力变换装置及移动体 |
DE112020007839T5 (de) | 2020-12-16 | 2023-09-28 | Mitsubishi Electric Corporation | Halbleitervorrichtung, Leistungskonvertierungsvorrichtung und mobiler Körper |
JP7471458B2 (ja) | 2020-12-16 | 2024-04-19 | 三菱電機株式会社 | 半導体装置、電力変換装置、および移動体 |
Also Published As
Publication number | Publication date |
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JP4794822B2 (ja) | 2011-10-19 |
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