JP6860334B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6860334B2
JP6860334B2 JP2016236918A JP2016236918A JP6860334B2 JP 6860334 B2 JP6860334 B2 JP 6860334B2 JP 2016236918 A JP2016236918 A JP 2016236918A JP 2016236918 A JP2016236918 A JP 2016236918A JP 6860334 B2 JP6860334 B2 JP 6860334B2
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Prior art keywords
metal layer
semiconductor chip
semiconductor device
semiconductor
electrode
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JP2016236918A
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English (en)
Japanese (ja)
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JP2018093114A (ja
JP2018093114A5 (enExample
Inventor
達郎 刀禰館
達郎 刀禰館
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Priority to JP2016236918A priority Critical patent/JP6860334B2/ja
Priority to US15/688,572 priority patent/US20180158762A1/en
Publication of JP2018093114A publication Critical patent/JP2018093114A/ja
Publication of JP2018093114A5 publication Critical patent/JP2018093114A5/ja
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
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WO2022160245A1 (zh) * 2021-01-29 2022-08-04 华为技术有限公司 集成电路封装件及其制备方法和终端
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