JP2018085514A - 半導体素子及びこれを含む半導体素子パッケージ - Google Patents
半導体素子及びこれを含む半導体素子パッケージ Download PDFInfo
- Publication number
- JP2018085514A JP2018085514A JP2017225766A JP2017225766A JP2018085514A JP 2018085514 A JP2018085514 A JP 2018085514A JP 2017225766 A JP2017225766 A JP 2017225766A JP 2017225766 A JP2017225766 A JP 2017225766A JP 2018085514 A JP2018085514 A JP 2018085514A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- intensity
- layer
- conductivity type
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 297
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 92
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 83
- 150000002500 ions Chemical class 0.000 claims abstract description 34
- 239000010410 layer Substances 0.000 claims description 385
- 239000000203 mixture Substances 0.000 claims description 59
- 230000000903 blocking effect Effects 0.000 claims description 21
- 239000002344 surface layer Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 description 27
- 239000002019 doping agent Substances 0.000 description 20
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 11
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 238000000605 extraction Methods 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- -1 aluminum ion Chemical class 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】いずれもアルミニウムを含む第1導電型半導体層124、第2導電型半導体層127、及び両層の間に配置される活性層126を含む発光構造物を含み、発光構造物に1次イオンが照射された時にアルミニウムを含む2次イオンが上記各層から放出され、第2導電型半導体層の2次イオン強度は、第1最大強度と第1最小強度を有し、第1導電型半導体層の2次イオン強度は、第1最小強度とは異なる第2最小強度を有し、第2導電型半導体層の表面から第1距離内で第2導電型半導体層は2次イオンの第1中間強度を有し、第1中間強度は、第2最小強度と対応し、第1中間強度は、第1最小強度と第1最大強度との間にあり、第1最大強度は、第1距離W1から第2距離W2内にあり、W1とW2の比は、1:0.2〜1:1である。
【選択図】図1
Description
第1中間強度P1は、第1導電型半導体層内に配置される中間層124bのイオン強度と同一であり得る。すなわち、第1中間強度P1は、第2最小強度P5と対応し得る。第1最大強度P2は、電子遮断層129の第1−1区間129aであり得る。また、第1最小強度P3は、第2導電型半導体層が第2電極(Pオーミック電極)と直接接触する表面層(第2−1導電型半導体層)であり得る。SIMS分析による結果は、物質の2次イオン強度またはドーピング濃度に対するスペクトラムで解析でき、2次イオン強度またはドーピング濃度の解析において、0.9倍以上〜1.1倍以内で発生するノイズを含み得る。したがって、「同一である」という記載は、一つの特定2次イオン強度またはドーピング濃度の0.9倍以上〜1.1倍以内のノイズを含んで指称し得る。この時、第1中間強度P1は、中間層124bの2次イオン強度のうち一番高い地点のイオン強度と同一のイオン強度を有し得る。
活性層126の2次イオン強度は、第1最大強度P1及び第2最大強度P4より小さく、第1最小強度P3及び第2最小強度P5より大きくなり得る。活性層126の2次イオン強度は、複数個のピークP61及び複数個のバレーP62を有し得る。活性層126のピークP61の強度は、活性層126のバレーP62の強度より大きくなり得る。
アルミニウムイオン強度の測定は、SIMS(Secondary Ion Mass Spectrometry)スペクトラムによる方法以外に、TEM、XRDなどの測定方法を適用し得る。
Claims (16)
- アルミニウムを含む第1導電型半導体層、
アルミニウムを含む第2導電型半導体層、及び
アルミニウムを含んで前記第1導電型半導体層と前記第2導電型半導体層との間に配置される活性層を含む発光構造物を含み、
前記発光構造物に1次イオンの照射時にアルミニウムを含む2次イオンが前記第1導電型半導体層、前記活性層及び前記第2導電型半導体層に放出され、
前記第2導電型半導体層の2次イオン強度は、第1最大強度と第1最小強度を有し、
前記第1導電型半導体層の2次イオン強度は、前記第1最小強度とは異なる第2最小強度を有し、
前記第2導電型半導体層の表面から第1距離内で前記第2導電型半導体層は前記2次イオンの第1中間強度を有し、前記第1中間強度は、前記第2最小強度と対応し、前記第1中間強度は、第1最小強度と第1最大強度との間にあり、
前記第1最大強度は、前記第1距離から第2距離内にあり、
前記第2距離W1と前記第2距離W2の比は、1:0.2〜1:1であることを特徴とする半導体素子。 - 前記第1最大強度と前記第2最小強度との間の第1強度差D1は、前記第1最小強度と前記第2最小強度との間の第2強度差D2より大きいことを特徴とする請求項1に記載の半導体素子。
- 前記第1強度差と前記第2強度差の比は、1:0.2〜1:2であることを特徴とする請求項2に記載の半導体素子。
- 前記第2導電型半導体層の2次イオン強度は、前記第1最小強度と第1中間強度との間で2個のピーク強度と2個のバレー強度を有することを特徴とする請求項1に記載の半導体素子。
- 前記2個のピーク強度は、前記バレー強度より強度が高いことを特徴とする請求項4に記載の半導体素子。
- 前記第2導電型半導体層は、Pタイプ半導体層と遮断層を含み、前記第1導電型半導体層は、Nタイプ半導体層を含むことを特徴とする請求項1に記載の半導体素子。
- 前記第1導電型半導体層の2次イオン強度は、前記活性層と一番近い領域で第2最大強度を有することを特徴とする請求項1に記載の半導体素子。
- 前記活性層の2次イオン強度は、前記第1最大強度及び第2最大強度より低く、前記第1最小強度及び第2最小強度より高いことを特徴とする請求項7に記載の半導体素子。
- 前記活性層の2次イオン強度は、複数個のピーク及び複数個のバレーを有することを特徴とする請求項1に記載の半導体素子。
- 前記活性層のピーク強度は、前記活性層のバレー強度より大きいことを特徴とする請求項9に記載の半導体素子。
- 前記第1導電型半導体層に電気的に連結される第1電極;及び
前記第2導電型半導体層に電気的に連結される第2電極を含み、
前記第2導電型半導体層は、前記第2電極が配置される表面層を含み、前記表面層は、前記活性層の反対側に位置し、
前記第2導電型半導体層は、前記表面層で前記第1最小強度を有することを特徴とする請求項1に記載の半導体素子。 - 前記第2導電型半導体層は、前記活性層と一番近く配置される遮断層を含むことを特徴とする請求項1に記載の半導体素子。
- 前記遮断層で前記第1最大強度を有することを特徴とする請求項12に記載の半導体素子。
- 前記第1導電型半導体層は、第1−1導電型半導体層、第1−2導電型半導体層、及び前記第1−1導電型半導体層と第1−2導電型半導体層との間に配置される中間層を含み、
前記中間層のアルミニウム組成は、30%〜60%であることを特徴とする請求項1に記載の半導体素子。 - 前記第2導電型半導体層は、前記第2電極と接触する第2−1導電型半導体層、及び前記活性層と第2−1導電型半導体層との間に配置される第2−2導電型半導体層、及び前記活性層と前記第2−2導電型半導体層との間に配置される第2−3導電型半導体層を含むことを特徴とする請求項11に記載の半導体素子。
- 基体;及び
前記基体に配置される半導体素子を含み、
前記半導体素子は、
アルミニウムを含む第1導電型半導体層、アルミニウムを含む第2導電型半導体層、及びアルミニウムを含み、前記第1導電型半導体層と前記第2導電型半導体層との間に配置される活性層を含む発光構造物を含み、
前記発光構造物に1次イオンの照射時に、アルミニウムを含む2次イオンが前記第1導電型半導体層、前記活性層及び前記第2導電型半導体層から放出され、
前記第2導電型半導体層の2次イオン強度は、第1最大強度と第1最小強度を有し、
前記第1導電型半導体層の2次イオン強度は、前記第1最小強度と異なる第2最小強度を有し、
前記第2導電型半導体層の表面から第1郷里内で、前記第2導電型半導体層は前記2次イオンの第1中間強度を有し、前記第1中間強度は、前記第2最小強度と対応さし、前記第1中間強度は、第1最小強度と第1最大強度との間にあり、
前記第1最大強度は、前記第1距離から第2距離内にあり、
前記第2距離W1と前記第1距離W2の比は、1:0.2〜1:1であることを特徴とする半導体素子パッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20160157704 | 2016-11-24 | ||
KR10-2016-0157704 | 2016-11-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018085514A true JP2018085514A (ja) | 2018-05-31 |
JP7290849B2 JP7290849B2 (ja) | 2023-06-14 |
Family
ID=60473338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017225766A Active JP7290849B2 (ja) | 2016-11-24 | 2017-11-24 | 半導体素子及びこれを含む半導体素子パッケージ |
Country Status (5)
Country | Link |
---|---|
US (1) | US10903395B2 (ja) |
EP (1) | EP3327797A1 (ja) |
JP (1) | JP7290849B2 (ja) |
KR (1) | KR102406803B1 (ja) |
CN (2) | CN108110110B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3474337A4 (en) * | 2016-06-20 | 2019-06-12 | LG Innotek Co., Ltd. | SEMICONDUCTOR DEVICE |
US10340415B2 (en) | 2016-09-01 | 2019-07-02 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package including the same |
WO2018048275A1 (ko) | 2016-09-10 | 2018-03-15 | 엘지이노텍 주식회사 | 반도체 소자 |
CN115602765A (zh) | 2016-09-13 | 2023-01-13 | 苏州立琻半导体有限公司(Cn) | 半导体器件和包括该半导体器件的半导体器件封装 |
US10903395B2 (en) | 2016-11-24 | 2021-01-26 | Lg Innotek Co., Ltd. | Semiconductor device having varying concentrations of aluminum |
KR102390828B1 (ko) | 2017-08-14 | 2022-04-26 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
KR102575569B1 (ko) * | 2018-08-13 | 2023-09-07 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
KR102594206B1 (ko) * | 2018-09-04 | 2023-10-26 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
KR102600336B1 (ko) * | 2018-09-20 | 2023-11-09 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
KR102665044B1 (ko) * | 2019-01-03 | 2024-05-13 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
KR102632201B1 (ko) * | 2019-01-10 | 2024-02-01 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003273473A (ja) * | 2001-11-05 | 2003-09-26 | Nichia Chem Ind Ltd | 半導体素子 |
WO2014123092A1 (ja) * | 2013-02-05 | 2014-08-14 | 株式会社トクヤマ | 窒化物半導体発光素子 |
JP2014241397A (ja) * | 2013-05-17 | 2014-12-25 | 株式会社トクヤマ | 窒化物半導体発光素子、および窒化物半導体ウェーハ |
JP2015002324A (ja) * | 2013-06-18 | 2015-01-05 | 学校法人 名城大学 | 窒化物半導体発光素子 |
US20150060908A1 (en) * | 2013-09-03 | 2015-03-05 | Sensor Electronic Technology, Inc. | Optoelectronic Device with Modulation Doping |
US20150270436A1 (en) * | 2012-10-09 | 2015-09-24 | Lg Innotek Co., Ltd. | Light-emitting device |
JP2016171127A (ja) * | 2015-03-11 | 2016-09-23 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
Family Cites Families (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0288267B1 (en) | 1987-04-21 | 1993-10-06 | Nec Corporation | An optical semiconductor device |
US5153990A (en) | 1990-03-09 | 1992-10-13 | Reliance Electric Industrial Company | Method for mounting a bearing or other device and tapered adapter onto a shaft |
JP2927158B2 (ja) | 1993-09-29 | 1999-07-28 | サンケン電気株式会社 | 半導体発光素子 |
US6340824B1 (en) | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
JP3033564B2 (ja) | 1997-10-02 | 2000-04-17 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP3614070B2 (ja) | 2000-01-17 | 2005-01-26 | 日亜化学工業株式会社 | 窒化物半導体発光ダイオード |
JP3786114B2 (ja) | 2000-11-21 | 2006-06-14 | 日亜化学工業株式会社 | 窒化物半導体素子 |
US6777253B2 (en) | 2000-12-20 | 2004-08-17 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device |
JP4161603B2 (ja) | 2001-03-28 | 2008-10-08 | 日亜化学工業株式会社 | 窒化物半導体素子 |
US6958497B2 (en) * | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
JP5055678B2 (ja) | 2001-09-28 | 2012-10-24 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JP4236840B2 (ja) | 2001-12-25 | 2009-03-11 | 富士フイルム株式会社 | 半導体レーザ素子 |
JP4207781B2 (ja) | 2002-01-28 | 2009-01-14 | 日亜化学工業株式会社 | 支持基板を有する窒化物半導体素子及びその製造方法 |
KR101030068B1 (ko) | 2002-07-08 | 2011-04-19 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자 |
US7521693B2 (en) | 2003-10-16 | 2009-04-21 | Alis Corporation | Ion sources, systems and methods |
KR100541102B1 (ko) | 2004-02-13 | 2006-01-11 | 삼성전기주식회사 | 오믹 접촉을 개선한 질화물 반도체 발광소자 및 그 제조방법 |
EP1619729B1 (en) | 2004-04-16 | 2010-02-10 | Nitride Semiconductors Co., Ltd. | Gallium nitride based light-emitting device |
JP2006032779A (ja) | 2004-07-20 | 2006-02-02 | Sanyo Electric Co Ltd | 窒化物半導体発光素子 |
WO2006043422A1 (ja) | 2004-10-19 | 2006-04-27 | Nichia Corporation | 半導体素子 |
EP1865564B1 (en) | 2005-03-18 | 2014-11-19 | Mitsubishi Chemical Corporation | Light-emitting device, white light-emitting device, illuminator, and image display |
US20060260671A1 (en) | 2005-05-17 | 2006-11-23 | Rohm Co., Ltd. | Semiconductor device and semiconductor light emitting device |
JP4968617B2 (ja) | 2005-11-11 | 2012-07-04 | 日亜化学工業株式会社 | 半導体発光素子及びその製造方法 |
TWI318013B (en) | 2006-09-05 | 2009-12-01 | Epistar Corp | A light emitting device and the manufacture method thereof |
KR100820546B1 (ko) | 2006-09-07 | 2008-04-07 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
CN102779918B (zh) | 2007-02-01 | 2015-09-02 | 日亚化学工业株式会社 | 半导体发光元件 |
KR101330898B1 (ko) | 2007-04-05 | 2013-11-18 | 엘지전자 주식회사 | 반도체 레이저 다이오드 |
US20100006884A1 (en) | 2007-08-07 | 2010-01-14 | Epistar Corporation | Light Emitting Device and Manufacturing Method Therof |
JP2008285758A (ja) | 2008-06-02 | 2008-11-27 | Nippon Steel Corp | 一方向性電磁鋼板 |
KR20100003321A (ko) | 2008-06-24 | 2010-01-08 | 삼성전자주식회사 | 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및발광 장치의 제조 방법 |
JP5305790B2 (ja) | 2008-08-28 | 2013-10-02 | 株式会社東芝 | 半導体発光素子 |
US8008683B2 (en) | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
JP5435503B2 (ja) | 2008-12-10 | 2014-03-05 | 古河電気工業株式会社 | 半導体レーザ素子およびその製造方法 |
JP5407359B2 (ja) | 2009-01-23 | 2014-02-05 | 信越半導体株式会社 | 発光ダイオード |
JPWO2010146808A1 (ja) | 2009-06-18 | 2012-11-29 | パナソニック株式会社 | 窒化ガリウム系化合物半導体発光ダイオード |
KR101007087B1 (ko) | 2009-10-26 | 2011-01-10 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
US8154042B2 (en) | 2010-04-29 | 2012-04-10 | Koninklijke Philips Electronics N V | Light emitting device with trenches and a top contact |
JP5659966B2 (ja) | 2010-06-29 | 2015-01-28 | 日亜化学工業株式会社 | 半導体素子及びその製造方法 |
JP5319628B2 (ja) | 2010-08-26 | 2013-10-16 | シャープ株式会社 | 窒化物半導体素子および半導体光学装置 |
DE102010044986A1 (de) | 2010-09-10 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips |
US20120112218A1 (en) | 2010-11-04 | 2012-05-10 | Agency For Science, Technology And Research | Light Emitting Diode with Polarized Light Emission |
JP5175918B2 (ja) | 2010-12-01 | 2013-04-03 | 株式会社東芝 | 半導体発光素子 |
CN103347982B (zh) * | 2010-12-01 | 2016-05-25 | 日东电工株式会社 | 具有掺杂浓度梯度的发射性陶瓷材料及其制造方法和使用方法 |
JP2012216603A (ja) | 2011-03-31 | 2012-11-08 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
US9252329B2 (en) * | 2011-10-04 | 2016-02-02 | Palo Alto Research Center Incorporated | Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction |
JP5988568B2 (ja) | 2011-11-14 | 2016-09-07 | Dowaエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
JP2013149889A (ja) | 2012-01-23 | 2013-08-01 | Stanley Electric Co Ltd | GaN系半導体発光素子 |
JP5857786B2 (ja) | 2012-02-21 | 2016-02-10 | 日亜化学工業株式会社 | 半導体発光素子の製造方法 |
KR101941033B1 (ko) | 2012-07-05 | 2019-01-22 | 엘지이노텍 주식회사 | 발광소자 |
TWI544658B (zh) | 2012-08-01 | 2016-08-01 | 晶元光電股份有限公司 | 發光二極體結構 |
KR101953716B1 (ko) | 2012-08-23 | 2019-03-05 | 엘지이노텍 주식회사 | 발광소자, 발광 소자 패키지 및 조명 시스템 |
US9401452B2 (en) | 2012-09-14 | 2016-07-26 | Palo Alto Research Center Incorporated | P-side layers for short wavelength light emitters |
KR20140038886A (ko) | 2012-09-21 | 2014-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자 |
JP2014127708A (ja) * | 2012-12-27 | 2014-07-07 | Toshiba Corp | 半導体発光素子及び半導体発光素子の製造方法 |
JP2016084822A (ja) | 2013-01-21 | 2016-05-19 | ジヤトコ株式会社 | マルチディスク変速機 |
KR102037865B1 (ko) | 2013-02-01 | 2019-10-30 | 삼성전자주식회사 | 반도체 발광소자 및 반도체 발광소자 제조방법 |
JP6118575B2 (ja) | 2013-02-12 | 2017-04-19 | 日亜化学工業株式会社 | 発光装置 |
JP6287317B2 (ja) | 2013-02-28 | 2018-03-07 | 日亜化学工業株式会社 | 半導体発光素子 |
KR20140130618A (ko) | 2013-05-01 | 2014-11-11 | 서울바이오시스 주식회사 | 솔더 페이스트를 통해 접착된 발광 다이오드를 갖는 발광 다이오드 모듈 및 발광 다이오드 |
US9847457B2 (en) | 2013-07-29 | 2017-12-19 | Seoul Viosys Co., Ltd. | Light emitting diode, method of fabricating the same and LED module having the same |
KR101787921B1 (ko) | 2013-09-05 | 2017-10-18 | 파나소닉 아이피 매니지먼트 가부시키가이샤 | 발광 장치 |
JP2015065245A (ja) * | 2013-09-24 | 2015-04-09 | 株式会社東芝 | 半導体発光素子及び半導体発光素子の製造方法 |
JP5818853B2 (ja) | 2013-10-15 | 2015-11-18 | 株式会社トクヤマ | n型窒化アルミニウム単結晶基板を用いた縦型窒化物半導体デバイス |
KR102070089B1 (ko) | 2013-10-23 | 2020-01-29 | 삼성전자주식회사 | 반도체 발광소자 패키지 및 이를 이용한 조명장치 |
KR102098245B1 (ko) | 2014-02-11 | 2020-04-07 | 삼성전자 주식회사 | 광원 패키지 및 그를 포함하는 표시 장치 |
US9397309B2 (en) * | 2014-03-13 | 2016-07-19 | Universal Display Corporation | Organic electroluminescent devices |
KR101458389B1 (ko) | 2014-04-01 | 2014-11-06 | (주)유비쿼스 | G.hn 기술을 엑세스 네트워크에 적용하기 위한 장치 |
CN106165128B (zh) | 2014-04-07 | 2018-11-09 | Lg 伊诺特有限公司 | 发光元件和照明系统 |
JP2015216352A (ja) | 2014-04-24 | 2015-12-03 | 国立研究開発法人理化学研究所 | 紫外発光ダイオードおよびそれを備える電気機器 |
US10361343B2 (en) | 2014-07-02 | 2019-07-23 | Trustees Of Boston University | Ultraviolet light emitting diodes |
EP2988339B1 (en) | 2014-08-20 | 2019-03-27 | LG Innotek Co., Ltd. | Light emitting device |
JP6337686B2 (ja) | 2014-08-21 | 2018-06-06 | 三菱ケミカル株式会社 | GaN基板およびGaN基板の製造方法 |
KR102282141B1 (ko) | 2014-09-02 | 2021-07-28 | 삼성전자주식회사 | 반도체 발광소자 |
JP6330604B2 (ja) | 2014-09-24 | 2018-05-30 | 日亜化学工業株式会社 | 半導体発光素子 |
KR20160062659A (ko) | 2014-11-25 | 2016-06-02 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 |
WO2016099061A1 (en) | 2014-12-19 | 2016-06-23 | Seoul Viosys Co., Ltd. | Semiconductor light emitting device and method of manufacturing the same |
US9865772B2 (en) | 2015-01-06 | 2018-01-09 | Apple Inc. | LED structures for reduced non-radiative sidewall recombination |
KR102303502B1 (ko) * | 2015-02-25 | 2021-09-17 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 이를 구비한 발광 소자 패키지 |
KR20160105126A (ko) | 2015-02-27 | 2016-09-06 | 서울바이오시스 주식회사 | 스트레인 강화된 웰층을 갖는 발광 다이오드 |
KR102239627B1 (ko) | 2015-03-26 | 2021-04-12 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
KR102416010B1 (ko) | 2015-03-31 | 2022-07-05 | 서울바이오시스 주식회사 | 자외선 발광 소자 |
JPWO2016163083A1 (ja) | 2015-04-09 | 2017-12-28 | パナソニックIpマネジメント株式会社 | 窒化物半導体発光素子 |
JP6860293B2 (ja) | 2015-04-28 | 2021-04-14 | 日機装株式会社 | 発光素子および発光素子の製造方法 |
KR102388284B1 (ko) | 2015-05-26 | 2022-04-19 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
US9540252B1 (en) | 2015-06-08 | 2017-01-10 | Rayvio Corporation | Ultraviolet disinfection system |
EP3350844B1 (en) | 2015-09-17 | 2021-10-27 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating two-dimensional hole gases |
KR102391513B1 (ko) | 2015-10-05 | 2022-04-27 | 삼성전자주식회사 | 물질막 적층체, 발광 소자, 발광 패키지, 및 발광 소자의 제조 방법 |
US10734547B2 (en) | 2016-06-24 | 2020-08-04 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package comprising same |
US10340415B2 (en) | 2016-09-01 | 2019-07-02 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package including the same |
US10903395B2 (en) | 2016-11-24 | 2021-01-26 | Lg Innotek Co., Ltd. | Semiconductor device having varying concentrations of aluminum |
-
2017
- 2017-11-22 US US15/821,519 patent/US10903395B2/en active Active
- 2017-11-24 JP JP2017225766A patent/JP7290849B2/ja active Active
- 2017-11-24 CN CN201711194588.9A patent/CN108110110B/zh active Active
- 2017-11-24 EP EP17203483.7A patent/EP3327797A1/en active Pending
- 2017-11-24 KR KR1020170158954A patent/KR102406803B1/ko active IP Right Grant
- 2017-11-24 CN CN202210938217.1A patent/CN115241340A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003273473A (ja) * | 2001-11-05 | 2003-09-26 | Nichia Chem Ind Ltd | 半導体素子 |
US20150270436A1 (en) * | 2012-10-09 | 2015-09-24 | Lg Innotek Co., Ltd. | Light-emitting device |
WO2014123092A1 (ja) * | 2013-02-05 | 2014-08-14 | 株式会社トクヤマ | 窒化物半導体発光素子 |
JP2014241397A (ja) * | 2013-05-17 | 2014-12-25 | 株式会社トクヤマ | 窒化物半導体発光素子、および窒化物半導体ウェーハ |
JP2015002324A (ja) * | 2013-06-18 | 2015-01-05 | 学校法人 名城大学 | 窒化物半導体発光素子 |
US20150060908A1 (en) * | 2013-09-03 | 2015-03-05 | Sensor Electronic Technology, Inc. | Optoelectronic Device with Modulation Doping |
JP2016171127A (ja) * | 2015-03-11 | 2016-09-23 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR102406803B1 (ko) | 2022-06-10 |
KR20180058653A (ko) | 2018-06-01 |
CN108110110A (zh) | 2018-06-01 |
JP7290849B2 (ja) | 2023-06-14 |
CN108110110B (zh) | 2022-08-23 |
CN115241340A (zh) | 2022-10-25 |
US20180145219A1 (en) | 2018-05-24 |
EP3327797A1 (en) | 2018-05-30 |
US10903395B2 (en) | 2021-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7290849B2 (ja) | 半導体素子及びこれを含む半導体素子パッケージ | |
US10937923B2 (en) | Semiconductor device and semiconductor device package including the same | |
CN109997234B (zh) | 半导体元件和包括该半导体元件的半导体元件封装 | |
KR102568298B1 (ko) | 반도체 소자 | |
KR102564198B1 (ko) | 반도체 소자 | |
KR102407739B1 (ko) | 반도체 소자 | |
CN110199398B (zh) | 半导体器件和包括该半导体器件的半导体器件封装 | |
KR102577859B1 (ko) | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 | |
KR102648472B1 (ko) | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 | |
KR102582184B1 (ko) | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 | |
KR102672684B1 (ko) | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 | |
KR102466006B1 (ko) | 반도체 소자 | |
KR102619743B1 (ko) | 반도체 소자 | |
KR102632215B1 (ko) | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 | |
KR102552889B1 (ko) | 반도체 소자, 반도체 소자 패키지, 및 반도체 소자 제조방법 | |
KR102465061B1 (ko) | 반도체 소자 | |
KR102430086B1 (ko) | 반도체 소자 | |
KR102551894B1 (ko) | 반도체 소자 | |
KR20180126834A (ko) | 반도체 소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20201105 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20210618 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20211020 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211026 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220126 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220510 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220728 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220823 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221104 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230214 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230419 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230509 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230526 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7290849 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |