JP2018078284A5 - - Google Patents
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- Publication number
- JP2018078284A5 JP2018078284A5 JP2017202502A JP2017202502A JP2018078284A5 JP 2018078284 A5 JP2018078284 A5 JP 2018078284A5 JP 2017202502 A JP2017202502 A JP 2017202502A JP 2017202502 A JP2017202502 A JP 2017202502A JP 2018078284 A5 JP2018078284 A5 JP 2018078284A5
- Authority
- JP
- Japan
- Prior art keywords
- pedestal
- substrate
- cavity
- annular band
- pedestal body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 53
- 239000003989 dielectric material Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022093471A JP7373022B2 (ja) | 2016-10-28 | 2022-06-09 | 開放空間均圧化通路および側方閉じ込めを備えた平坦な基板縁部接触部 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662414072P | 2016-10-28 | 2016-10-28 | |
| US62/414,072 | 2016-10-28 | ||
| US15/431,088 | 2017-02-13 | ||
| US15/431,088 US10622243B2 (en) | 2016-10-28 | 2017-02-13 | Planar substrate edge contact with open volume equalization pathways and side containment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022093471A Division JP7373022B2 (ja) | 2016-10-28 | 2022-06-09 | 開放空間均圧化通路および側方閉じ込めを備えた平坦な基板縁部接触部 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018078284A JP2018078284A (ja) | 2018-05-17 |
| JP2018078284A5 true JP2018078284A5 (enExample) | 2020-12-24 |
| JP7096538B2 JP7096538B2 (ja) | 2022-07-06 |
Family
ID=62021826
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017202502A Active JP7096538B2 (ja) | 2016-10-28 | 2017-10-19 | 開放空間均圧化通路および側方閉じ込めを備えた平坦な基板縁部接触部 |
| JP2022093471A Active JP7373022B2 (ja) | 2016-10-28 | 2022-06-09 | 開放空間均圧化通路および側方閉じ込めを備えた平坦な基板縁部接触部 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022093471A Active JP7373022B2 (ja) | 2016-10-28 | 2022-06-09 | 開放空間均圧化通路および側方閉じ込めを備えた平坦な基板縁部接触部 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10622243B2 (enExample) |
| JP (2) | JP7096538B2 (enExample) |
| KR (3) | KR102430432B1 (enExample) |
| CN (2) | CN117038508A (enExample) |
| SG (1) | SG10201708448UA (enExample) |
| TW (1) | TWI765924B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10622243B2 (en) * | 2016-10-28 | 2020-04-14 | Lam Research Corporation | Planar substrate edge contact with open volume equalization pathways and side containment |
| KR20200130743A (ko) | 2018-04-04 | 2020-11-19 | 램 리써치 코포레이션 | 시일 표면을 갖는 정전 척 |
| KR102851519B1 (ko) | 2018-04-20 | 2025-08-27 | 램 리써치 코포레이션 | 에지 배제 제어 |
| CN109594063A (zh) * | 2018-12-27 | 2019-04-09 | 西安奕斯伟硅片技术有限公司 | 一种外延反应设备 |
| KR102930276B1 (ko) * | 2019-02-08 | 2026-02-23 | 램 리써치 코포레이션 | ALD (Atomic Layer Deposition) 기판 프로세싱 챔버들의 막 특성들을 조절하기 위한 페데스탈들 |
| WO2021162865A1 (en) * | 2020-02-11 | 2021-08-19 | Lam Research Corporation | Carrier ring designs for controlling deposition on wafer bevel/edge |
| US11577665B2 (en) | 2020-02-27 | 2023-02-14 | Cpk Interior Products | Urethane and graphene interior trim panel |
| DE102020105538A1 (de) | 2020-03-02 | 2021-09-02 | Aixtron Se | Vorrichtung zur Halterung eines Substrates in einem CVD-Reaktor |
| EP3970489A1 (en) | 2020-09-18 | 2022-03-23 | CpK Interior Products Inc. | Graphene-based antiviral polymer |
| US11781212B2 (en) * | 2021-04-07 | 2023-10-10 | Applied Material, Inc. | Overlap susceptor and preheat ring |
| DE102021126019A1 (de) | 2021-10-07 | 2023-04-13 | Aixtron Se | CVD-Reaktor mit einem Tragring beziehungsweise Tragring für ein Substrat |
| US20240014065A1 (en) * | 2022-07-08 | 2024-01-11 | Applied Materials, Inc. | Flat susceptor with grid pattern and venting grooves on surface thereof |
| US20250112158A1 (en) | 2023-10-03 | 2025-04-03 | Nanya Technology Corporation | Contact structure, semiconductor device comprising the same, and method for fabricating the same |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2955829A (en) * | 1958-07-16 | 1960-10-11 | George F Brewster | Work holding chuck |
| JP3453834B2 (ja) * | 1994-02-25 | 2003-10-06 | 三菱電機株式会社 | ウエハチャック装置および半導体製造装置 |
| WO1998053484A1 (en) | 1997-05-20 | 1998-11-26 | Tokyo Electron Limited | Processing apparatus |
| JPH11111707A (ja) * | 1997-10-07 | 1999-04-23 | Hitachi Electron Eng Co Ltd | 気相成長装置 |
| US6219219B1 (en) | 1998-09-30 | 2001-04-17 | Applied Materials, Inc. | Cathode assembly containing an electrostatic chuck for retaining a wafer in a semiconductor wafer processing system |
| US6179921B1 (en) | 1999-04-19 | 2001-01-30 | Applied Materials, Inc. | Backside gas delivery system for a semiconductor wafer processing system |
| JP2003197532A (ja) | 2001-12-21 | 2003-07-11 | Sumitomo Mitsubishi Silicon Corp | エピタキシャル成長方法及びエピタキシャル成長用サセプター |
| US20050000449A1 (en) * | 2001-12-21 | 2005-01-06 | Masayuki Ishibashi | Susceptor for epitaxial growth and epitaxial growth method |
| US7252738B2 (en) * | 2002-09-20 | 2007-08-07 | Lam Research Corporation | Apparatus for reducing polymer deposition on a substrate and substrate support |
| US20040099375A1 (en) * | 2002-11-21 | 2004-05-27 | Yanghua He | Edge-contact ring for a wafer pedestal |
| JP4317731B2 (ja) | 2003-10-27 | 2009-08-19 | 豊田合成株式会社 | エアバッグを備えたシートベルト |
| JP4421874B2 (ja) | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP2006005177A (ja) | 2004-06-17 | 2006-01-05 | Tokyo Electron Ltd | 熱処理装置 |
| JP4534619B2 (ja) | 2004-06-21 | 2010-09-01 | 株式会社Sumco | 半導体シリコン基板用熱処理治具 |
| US7244311B2 (en) * | 2004-10-13 | 2007-07-17 | Lam Research Corporation | Heat transfer system for improved semiconductor processing uniformity |
| KR100974130B1 (ko) | 2005-08-17 | 2010-08-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 용접된 판과 저항식 히터를 갖는 기판 지지대 |
| US7837826B2 (en) * | 2006-07-18 | 2010-11-23 | Lam Research Corporation | Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof |
| JP5102500B2 (ja) * | 2007-01-22 | 2012-12-19 | 東京エレクトロン株式会社 | 基板処理装置 |
| US20080314319A1 (en) * | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
| US8021968B2 (en) | 2007-08-03 | 2011-09-20 | Shin-Etsu Handotai Co., Ltd. | Susceptor and method for manufacturing silicon epitaxial wafer |
| CN101471275B (zh) * | 2007-12-26 | 2011-04-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种被处理体的保持装置 |
| JP5038365B2 (ja) * | 2009-07-01 | 2012-10-03 | 株式会社東芝 | サセプタおよび成膜装置 |
| US8274017B2 (en) * | 2009-12-18 | 2012-09-25 | Applied Materials, Inc. | Multifunctional heater/chiller pedestal for wide range wafer temperature control |
| JP5604907B2 (ja) * | 2010-02-25 | 2014-10-15 | 信越半導体株式会社 | 気相成長用半導体基板支持サセプタおよびエピタキシャルウェーハ製造装置およびエピタキシャルウェーハの製造方法 |
| US8371567B2 (en) * | 2011-04-13 | 2013-02-12 | Novellus Systems, Inc. | Pedestal covers |
| TWM431430U (en) * | 2011-08-24 | 2012-06-11 | Wafer Works Corp | Clip board type fastening device for use in annularly etching wafer |
| KR101874901B1 (ko) * | 2011-12-07 | 2018-07-06 | 삼성전자주식회사 | 기판 건조 장치 및 방법 |
| US10593521B2 (en) * | 2013-03-12 | 2020-03-17 | Applied Materials, Inc. | Substrate support for plasma etch operations |
| US10804081B2 (en) * | 2013-12-20 | 2020-10-13 | Lam Research Corporation | Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber |
| TWI734668B (zh) * | 2014-06-23 | 2021-08-01 | 美商應用材料股份有限公司 | 在ｅｐｉ腔室中的基材熱控制 |
| US9793096B2 (en) | 2014-09-12 | 2017-10-17 | Lam Research Corporation | Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity |
| US10242848B2 (en) | 2014-12-12 | 2019-03-26 | Lam Research Corporation | Carrier ring structure and chamber systems including the same |
| US10622243B2 (en) * | 2016-10-28 | 2020-04-14 | Lam Research Corporation | Planar substrate edge contact with open volume equalization pathways and side containment |
-
2017
- 2017-02-13 US US15/431,088 patent/US10622243B2/en active Active
- 2017-09-27 KR KR1020170125171A patent/KR102430432B1/ko active Active
- 2017-10-12 SG SG10201708448UA patent/SG10201708448UA/en unknown
- 2017-10-19 JP JP2017202502A patent/JP7096538B2/ja active Active
- 2017-10-23 TW TW106136280A patent/TWI765924B/zh active
- 2017-10-27 CN CN202310975492.5A patent/CN117038508A/zh active Pending
- 2017-10-27 CN CN201711022418.2A patent/CN108091592B/zh active Active
-
2020
- 2020-03-31 US US16/836,062 patent/US11443975B2/en active Active
-
2022
- 2022-06-09 JP JP2022093471A patent/JP7373022B2/ja active Active
- 2022-08-03 KR KR1020220096718A patent/KR20220114517A/ko not_active Ceased
-
2023
- 2023-11-21 KR KR1020230161813A patent/KR102831215B1/ko active Active
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