JP7373022B2 - 開放空間均圧化通路および側方閉じ込めを備えた平坦な基板縁部接触部 - Google Patents
開放空間均圧化通路および側方閉じ込めを備えた平坦な基板縁部接触部 Download PDFInfo
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- JP7373022B2 JP7373022B2 JP2022093471A JP2022093471A JP7373022B2 JP 7373022 B2 JP7373022 B2 JP 7373022B2 JP 2022093471 A JP2022093471 A JP 2022093471A JP 2022093471 A JP2022093471 A JP 2022093471A JP 7373022 B2 JP7373022 B2 JP 7373022B2
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- 239000000758 substrate Substances 0.000 claims description 166
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 145
- 238000012545 processing Methods 0.000 claims description 96
- 239000003989 dielectric material Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 10
- 238000004891 communication Methods 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 17
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
- B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Description
本願は、2016年10月28日出願の米国仮出願第62/414,072号の利益を主張する。上記の出願の開示全体が、参照によって本明細書に組み込まれる。
本発明は、以下の適用例としても実現可能である。
<適用例1>
基板処理システムのためのペデスタルであって、
基板対向面を含むペデスタル本体と、
前記基板対向面の上に配置され、前記基板の半径方向外側縁部を支持するように構成された環状バンドと、
前記ペデスタル本体の前記基板対向面に規定され、前記環状バンドの半径方向内側に配置された空洞であって、前記空洞は、前記基板の底面と前記ペデスタル本体の前記基板対向面との間に空間を形成する、空洞と、
前記ペデスタル本体を貫通して前記空洞と流体連通することで、処理中に前記基板の両面における圧力を均一にする複数のベントと、
を備える、ペデスタル。
<適用例2>
適用例1に記載のペデスタルであって、前記バンドは、4mm~12mmの範囲の幅を有する、ペデスタル。
<適用例3>
適用例1に記載のペデスタルであって、前記バンドは、5mm~9mmの範囲の幅を有する、ペデスタル。
<適用例4>
適用例1に記載のペデスタルであって、前記バンドは、6mm~7mmの範囲の幅を有する、ペデスタル。
<適用例5>
適用例1に記載のペデスタルであって、前記バンドは、2~32の範囲の表面粗さ(Ra)を有する、ペデスタル。
<適用例6>
適用例5に記載のペデスタルであって、前記表面粗さ(Ra)は、2~24の範囲である、ペデスタル。
<適用例7>
適用例5に記載のペデスタルであって、前記表面粗さ(Ra)は、2~16の範囲である、ペデスタル。
<適用例8>
適用例1に記載のペデスタルであって、前記複数のベントは、
前記ペデスタル本体の半径方向外側から半径方向内向きに伸びる第1ベント部分と、
前記第1ベント部分の半径方向内側端部から前記空洞まで伸びる第2ベント部分と、
を備える、ペデスタル。
<適用例9>
適用例1に記載のペデスタルであって、前記複数のベントは、
前記ペデスタル本体の底部側から前記空洞に向かって軸方向に伸びる第1ベント部分と、
前記第1ベント部分を前記空洞に接続する複数の孔を含む第2ベント部分と、
を備える、ペデスタル。
<適用例10>
適用例1に記載のペデスタルであって、前記バンドは、導電材料の表面上に形成された誘電体コーティング、コーティングされていない導電材料、コーティングされていない金属、および、コーティングされていない誘電材料からなる群より選択された材料で形成される、ペデスタル。
<適用例11>
適用例1に記載のペデスタルであって、さらに、
前記基板および前記バンドの半径方向外側に配置されたリングを備え、
前記リングの上面は、前記基板の上面よりも上方に配置され、
前記リングは、誘電材料で形成されている、ペデスタル。
<適用例12>
適用例11に記載のペデスタルであって、前記誘電材料は、アルミナ、窒化アルミニウム、サファイア、石英、および、酸化シリコーンからなる群より選択される、ペデスタル。
<適用例13>
適用例1に記載のペデスタルであって、さらに、
前記基板の半径方向内側かつ下方に配置された半径方向内側表面と、前記基板の半径方向外側に配置された半径方向外側表面とを含むリングを備え、
前記リングの上面は、前記基板の上面と平行であり、
前記リングは、誘電材料で形成されている、ペデスタル。
<適用例14>
適用例13に記載のペデスタルであって、前記誘電材料は、アルミナ、窒化アルミニウム、サファイア、石英、および、酸化シリコーンからなる群より選択される、ペデスタル。
<適用例15>
適用例1に記載のペデスタルであって、前記ペデスタル本体は、その半径方向外側縁部の周りに環状ノッチを備え、前記ペデスタルは、さらに、
前記環状ノッチ内に配置されたリングを備え、
前記リングの底面は、前記基板の底面よりも下方にあり、
前記リングの上面は、前記基板の上面よりも下方にあり、
前記リングは、誘電材料で形成されている、ペデスタル。
<適用例16>
適用例15に記載のペデスタルであって、前記誘電材料は、アルミナ、窒化アルミニウム、サファイア、石英、および、酸化シリコーンからなる群より選択される、ペデスタル。
<適用例17>
適用例1に記載のペデスタルであって、さらに、
前記基板の中央を支持するために前記空洞内に配置された複数のピンを備え、
前記ピンの上面は、処理中に前記環状バンドの上面よりも下方、平行、または、上方のいずれかにある、ペデスタル。
<適用例18>
適用例1に記載のペデスタルであって、さらに、
前記基板の中央を支持するための複数の突起を備え、
前記突起の上面は、前記環状バンドの上面よりも下方、平行、または、上方のいずれかにある、ペデスタル。
<適用例19>
適用例1に記載のペデスタルであって、前記基板の前記半径方向外側縁部に沿った前記基板の裏面は、処理中に前記バンドと平行である、ペデスタル。
<適用例20>
基板処理システムであって、
処理チャンバと、
前記処理チャンバ内に配置された適用例1のペデスタルと、
前記処理チャンバ内に配置されたRF発生器と、
を備える、基板処理システム。
<適用例21>
適用例20に記載の基板処理システムであって、さらに、
前記ペデスタル本体から伸張可能な複数の最小接触面積(MCA)ピンと、
前記MCAピンの上面が、前記バンドよりも下方、平行、または、上方のいずれかになるように、処理中に前記MCAピンを伸ばすように構成されたコントローラと、
を備える、基板処理システム。
<適用例22>
適用例1に記載の基板処理システムであって、さらに、前記空洞内で前記ペデスタル本体から上向きに伸びる複数の突起を備える、基板処理システム。
Claims (24)
- 基板処理システムのためのペデスタルであって、
基板対向面、および、その半径方向外側縁部の周りに環状ノッチを含むペデスタル本体と、
前記基板対向面の上に配置され、基板の半径方向外側縁部に接触するように構成された環状バンドと、
前記ペデスタル本体の前記基板対向面に規定され、前記環状バンドの半径方向内側に配置された空洞であって、前記空洞は、前記基板の底面と前記ペデスタル本体の前記基板対向面との間に空間を形成する、空洞と、
前記ペデスタル本体を貫通して前記空洞と流体連通することで、処理中に前記基板の両面における圧力を均一にする複数のベントと、
前記ペデスタル本体から分離し、前記ペデスタル本体上の前記環状ノッチに配置されたリングであって、前記リングの底面は、前記基板の底面よりも下方にあり、前記リングの上面は、前記基板の上面よりも下方にある、リングと、
を備える、ペデスタル。 - 請求項1に記載のペデスタルであって、前記環状バンドは、4mm~12mmの範囲の幅を有する、ペデスタル。
- 請求項1に記載のペデスタルであって、前記環状バンドは、2~32の範囲の表面粗さ(Ra)を有する、ペデスタル。
- 請求項1に記載のペデスタルであって、前記環状バンドは、導電材料の表面上に形成された誘電体コーティング、コーティングされていない導電材料、コーティングされていない金属、および、コーティングされていない誘電材料からなる群より選択された材料で形成されている、ペデスタル。
- 請求項1に記載のペデスタルであって、前記リングは、誘電材料で形成されている、ペデスタル。
- 請求項5に記載のペデスタルであって、前記誘電材料は、アルミナ、窒化アルミニウム、サファイア、石英、および、酸化シリコンからなる群より選択される、ペデスタル。
- 請求項1に記載のペデスタルであって、前記リングの高さは、前記ペデスタル本体上の前記環状ノッチの深さよりも大きい、ペデスタル。
- 請求項1に記載のペデスタルであって、前記リングの前記上面は、前記環状バンドの上面よりも上方にある、ペデスタル。
- 請求項1に記載のペデスタルであって、さらに、
前記基板の中央を支持するために前記空洞内に配置された複数のピンを備え、
前記ピンの上面は、処理中に前記環状バンドの上面よりも下方、平行、または、上方のいずれかにある、ペデスタル。 - 請求項9に記載のペデスタルであって、さらに、
前記ピンの上面が、前記環状バンドの前記上面よりも下方、平行、または、上方のいずれかになるように、処理中に前記ピンを伸ばすように構成されたコントローラを備える、ペデスタル。 - 請求項1に記載のペデスタルであって、前記環状バンドは、処理中に前記基板が前記環状バンドと平行になるように、前記半径方向外側縁部に沿った前記基板の前記底面を支持するように構成されている、ペデスタル。
- 基板処理システムであって、
処理チャンバと、
前記処理チャンバ内に配置された請求項1のペデスタルと、
前記処理チャンバ内に配置されたRF発生器と、
を備える、基板処理システム。 - 基板処理システムのためのペデスタルであって、
基板対向面を含むペデスタル本体と、
前記基板対向面の上に配置され、基板の半径方向外側縁部に接触するように構成された環状バンドと、
前記ペデスタル本体の前記基板対向面に規定され、前記環状バンドの半径方向内側に配置された空洞であって、前記空洞は、前記基板の底面と前記ペデスタル本体の前記基板対向面との間に空間を形成する、空洞と、
前記ペデスタル本体を貫通して前記空洞と流体連通することで、処理中に前記基板の両面における圧力を均一にする複数のベントと、
前記ペデスタル本体から分離し、前記基板および前記ペデスタル本体上の前記環状バンドの半径方向外側に配置されたリングであって、前記リングの上面は、前記基板の上面よりも上方にある、リングと、
を備える、ペデスタル。 - 請求項13に記載のペデスタルであって、前記リングは、誘電材料で形成されている、ペデスタル。
- 請求項14に記載のペデスタルであって、前記誘電材料は、アルミナ、窒化アルミニウム、サファイア、石英、および、酸化シリコンからなる群より選択される、ペデスタル。
- 請求項13に記載のペデスタルであって、前記リングの底面は、前記基板の底面よりも下方にある、ペデスタル。
- 請求項13に記載のペデスタルであって、前記ペデスタル本体は、前記ペデスタル本体の半径方向外側縁部に形成された環状ノッチを備える、ペデスタル。
- 請求項17に記載のペデスタルであって、前記リングは、
前記環状ノッチの内部に位置する第1部分と、
前記環状ノッチの半径方向内向きに伸びる第2部分と、
を備える、ペデスタル。 - 請求項18に記載のペデスタルであって、
前記リングの前記第2部分の半径方向内側端部は、前記環状バンドの半径方向外側端部の半径方向外側に配置されている、ペデスタル。 - 請求項18に記載のペデスタルであって、前記第1部分の第1厚さは、前記第2部分の第2厚さよりも大きいまたは小さいのいずれかである、ペデスタル。
- 基板処理システムのためのペデスタルであって、
基板対向面を含むペデスタル本体と、
前記基板対向面の上に配置され、基板に接触するように構成された環状バンドと、
前記ペデスタル本体の前記基板対向面に規定され、前記環状バンドの半径方向内側に配置された空洞であって、前記空洞は、前記基板の底面と前記ペデスタル本体の前記基板対向面との間に空間を形成する、空洞と、
前記ペデスタル本体を貫通して前記空洞と流体連通することで、処理中に前記基板の両面における圧力を均一にする複数のベントと、
前記ペデスタル本体から分離し、前記ペデスタル本体の上に配置されたリングであって、前記リングは、前記基板の半径方向内側かつ下方に配置された半径方向内側表面と、前記基板の半径方向外側に配置された半径方向外側表面とを含み、前記リングの上面は、前記基板の上面と平行である、リングと、
を備える、ペデスタル。 - 請求項21に記載のペデスタルであって、前記リングは、誘電材料で形成されている、ペデスタル。
- 請求項22に記載のペデスタルであって、前記誘電材料は、アルミナ、窒化アルミニウム、サファイア、石英、および、酸化シリコンからなる群より選択される、ペデスタル。
- 請求項22に記載のペデスタルであって、前記リングの前記上面の半径方向最内端部は、前記基板の半径方向外側縁部の外側に配置されている、ペデスタル。
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2017
- 2017-02-13 US US15/431,088 patent/US10622243B2/en active Active
- 2017-09-27 KR KR1020170125171A patent/KR102430432B1/ko active IP Right Grant
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- 2017-10-23 TW TW106136280A patent/TWI765924B/zh active
- 2017-10-27 CN CN201711022418.2A patent/CN108091592B/zh active Active
- 2017-10-27 CN CN202310975492.5A patent/CN117038508A/zh active Pending
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2020
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Also Published As
Publication number | Publication date |
---|---|
KR102430432B1 (ko) | 2022-08-05 |
KR20230163977A (ko) | 2023-12-01 |
JP2022120080A (ja) | 2022-08-17 |
US11443975B2 (en) | 2022-09-13 |
US20180122685A1 (en) | 2018-05-03 |
JP2018078284A (ja) | 2018-05-17 |
JP7096538B2 (ja) | 2022-07-06 |
CN108091592B (zh) | 2023-08-25 |
KR20180046867A (ko) | 2018-05-09 |
CN108091592A (zh) | 2018-05-29 |
TW201833974A (zh) | 2018-09-16 |
US20200227304A1 (en) | 2020-07-16 |
US10622243B2 (en) | 2020-04-14 |
SG10201708448UA (en) | 2018-05-30 |
TWI765924B (zh) | 2022-06-01 |
KR20220114517A (ko) | 2022-08-17 |
CN117038508A (zh) | 2023-11-10 |
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