側與晶圓周邊處形成一環狀的钱刻氣體 體進入蝕刻氣體導入區並接觸到··氡 ._ 任蜩q 一礼化矽層時，氣體持續 二氧化石夕分子’使得二氧化矽層逐漸產生一蝕刻寬 控制钱刻氣體從晶圓側邊進入底部钱刻氣體導入區的 方式，如_氣體進人的時間、流量與卫作平台旋轉速度， 直至所需的飯刻寬度。 前述之氣體導入區與晶圓尺寸大小成互補變動，當晶 =外徑與上、下夾板邊緣接近時，氣體導人區範圍變小； .圓卜&與上下夾板邊緣遠離時，氣體導人區範圍變 大’由上述說明可知，更拖又 更換不同尺寸晶圓時，氣體導入區 仍存在於晶圓的周邊，改善習用技術需依晶圓大小更換對 應的夾持裝置。 執行晶圓環敍刻時，係將下失板、晶圓與上夾板依序 放入底座的容置槽内，再移動滑動式夾具使上夾板與下夾 板夾緊其間的晶圓’再將底座置於工作平台上固定，以進 :晶圓底部二氧化石夕層餘刻；藉此，t晶圓尺寸變換時， 廟α體導入區與晶圓尺"vf" yfe 7； -54： αχα - 圓尺寸成互補變動，不需更換對應晶圓大 小的環形襯墊與工作支撐平台。 【實施方式】 關於本創作之-較佳實施例剖面圖，請參閱圖1所示， 其包括： 工作平台5G，係、用於承載環㈣加工物； 底座4〇，係设於工作平台50之上，底座40表面形 成有一圓形容置槽42; M431430 一滑動式夾具41， 係設於底座40表面且對應於容置槽A ring-shaped gas engraved gas is formed at the side and the periphery of the wafer into the etching gas introduction region and is in contact with the ·. 蜩 蜩 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体Gradually, an etch width is controlled to control the gas from the side of the wafer to the bottom of the gas engraving area, such as the time of the gas entering the flow, the flow rate of the turbine and the rotation speed of the platform, until the desired width of the meal. The gas introduction zone has a complementary variation with the size of the wafer. When the crystal=outer diameter is close to the edge of the upper and lower plates, the range of the gas guiding zone becomes smaller. When the circle & is away from the edge of the upper and lower plates, the gas guide The range of the human area has become larger. As can be seen from the above description, when the wafers of different sizes are replaced, the gas introduction area still exists in the periphery of the wafer, and the conventional technology needs to replace the corresponding clamping device according to the wafer size. When the wafer ring is engraved, the lower plate, the wafer and the upper plate are sequentially placed in the receiving groove of the base, and then the sliding clamp is moved to clamp the wafer between the upper plate and the lower plate. The base is fixed on the working platform to enter: the bottom of the silicon dioxide at the bottom of the wafer; thereby, when the size of the wafer is changed, the temple α body lead-in area and the wafer ruler "vf" yfe 7; -54 : αχα - The circle size is complementary and does not require replacement of the wafer-sized annular gasket and the working support platform. [Embodiment] A cross-sectional view of a preferred embodiment of the present invention, as shown in FIG. 1, includes: a working platform 5G, which is used for carrying a ring (4) workpiece; a base 4〇, which is attached to the working platform 50. The bottom surface of the base 40 is formed with a circular receiving groove 42. The M431430 is a sliding clamp 41 which is disposed on the surface of the base 40 and corresponds to the receiving groove.
置槽42上方；Above the slot 42;
該承載區大小與待蝕刻的晶圓2〇匹配；The size of the carrying area is matched with the wafer 2 to be etched;
經由上述說明可瞭解具體結構，請參閱圖2所示，依 序將下夾板30、晶圓20、上夾板10放入表面具有一圓形 谷置槽42的底座40’移動滑動式夹具41上的滑桿44 ,接 觸上夹板10,使上夾板與 2〇’再將底座40置於工作平台 1〇與下夾板30夾緊其間的晶圓 :平台50上，進行晶圓2〇蝕刻加 關於滑桿44動作示意圖，請參閱圖3所示，該滑桿44 八有則後滑動的行程，當滑桿44向後收時，滑桿44前端 遠離容置槽42並接近豎桿43,可依序放入下失板3〇、晶 圓20與上夾板1〇到容置槽42内；當滑桿44向前推時， /月幸干44刖知接觸上夾板1〇表面產生一下壓力使上夾 板1 〇與下夾板30夾緊其間的晶圓2〇。 别述貫穿於豎桿43上端矩形穿槽之滑桿44，滑桿44 則端進一歩向下延伸形成有一凸塊45，當滑桿44向前滑移 至容置槽42上方時’凸塊45產生一下壓力用以夾緊上夾 板1 〇與下夾板30其間的晶圓2〇。 M431.430 當晶圓20夹持於下夹板30承載區與上夾板1〇覆蓋區 之間’由於上夾板1 〇與下夾板30大於晶圓2〇外徑，因此 在晶圓20周邊處形成一環狀的蝕刻氣體導入區 a 么备刻 氣體碰到二氧化矽層21時，氣體持續帶走二氧化矽分子， 使付一氧化矽層21逐漸產生一蝕刻寬度；控制蝕刻氣體從 晶圓20側邊進入底部氣體導入區22的方式，如蝕刻氣體 進入的時間、流量與工作平台50旋轉速度，直至所需的蝕 刻寬度。 ^Through the above description, the specific structure can be understood. Referring to FIG. 2, the lower clamp 30, the wafer 20, and the upper clamp 10 are sequentially placed on the base 40' having the circular valley groove 42 on the surface to move the slide clamp 41. The sliding bar 44 contacts the upper clamping plate 10, so that the upper clamping plate and the second clamping plate 40 are placed on the wafer between the working platform 1〇 and the lower clamping plate 30: the platform 50, and the wafer 2 is etched and added. Schematic diagram of the operation of the sliding rod 44, as shown in FIG. 3, the sliding rod 44 has a rear sliding stroke. When the sliding rod 44 is rearwardly received, the front end of the sliding rod 44 is away from the receiving groove 42 and close to the vertical rod 43. The sequence is placed in the lower plate 3, the wafer 20 and the upper plate 1 are slid into the accommodating groove 42; when the slider 44 is pushed forward, the pressure on the surface of the upper plate 1 is contacted. The upper plate 1 and the lower plate 30 clamp the wafer 2 therebetween. The slider 44 is inserted through the rectangular slot of the upper end of the vertical rod 43. The slider 44 extends downwardly to form a protrusion 45. When the slider 44 slides forward to the upper of the receiving groove 42, the bump 45 generates a pressure for clamping the wafer 2 上 between the upper plate 1 and the lower plate 30. M431.430 When the wafer 20 is sandwiched between the lower clamping plate 30 bearing area and the upper clamping plate 1〇 coverage area, the upper clamping plate 1 and the lower clamping plate 30 are larger than the outer diameter of the wafer 2, so that the wafer 20 is formed at the periphery of the wafer 20. When a ring of etching gas is introduced into the region a, the gas continues to carry away the cerium oxide molecules, so that the cerium oxide layer 21 gradually generates an etching width; and the etching gas is controlled from the wafer. The manner in which the sides enter the bottom gas introduction zone 22, such as the time at which the etching gas enters, the flow rate, and the rotational speed of the working platform 50, up to the desired etching width. ^
前述之蝕刻氣體導入區22與晶圓20尺寸大小成互補 變動，當晶圓20外徑與上夾板1〇、下夹板3〇邊緣接近時， 氣體導入區22範圍變小；當晶圓2〇外徑與上夾板]〇、下 夾板30邊緣遠離時，氣體導入區22範圍變大；由上述說 明可知，更換不同尺寸晶圓20時，氣體導入區22仍存在 於晶圓20的周邊，不會消失。 如前揭所述，本創作可改善習用因夾具行程位移或橡 膠«變形’使晶圓2G在夾具下壓過程中產生偏移，解決 晶圓20與下方環形襯墊相對位置移動，使得晶圓2〇底部 氧化矽層21蝕刻寬度錯誤的問題；進一步解決習用技術 需依晶圓大小而更換相對應的環形襯墊與工作支撐平台。 【圖式簡單說明】 圖1 :係本創作之一較佳實施例剖面圖。 圖2 :係本創作之一較佳實施例立體分解圖。 圖3:係本創作之一較佳實施例滑桿動作示意圖。 7 M431430 【主要元件符號說明】 10 上夾板 20 21 二氧化矽層 22 30 下夹板 40 41 滑動式夾具 42 43 豎桿 44 45 凸塊 50 晶圓 氣體導入區 底座 容置槽 滑桿 工作平台The etching gas introduction region 22 and the size of the wafer 20 are complementary to each other. When the outer diameter of the wafer 20 is close to the edge of the upper and lower plates 1 and 3, the range of the gas introduction region 22 becomes smaller; when the wafer 2 is When the outer diameter is opposite to the upper clamp plate 〇 and the edge of the lower clamp plate 30, the range of the gas introduction region 22 becomes large; as is apparent from the above description, when the wafer 20 of different sizes is replaced, the gas introduction region 22 still exists at the periphery of the wafer 20, Will disappear. As described above, the present invention can improve the offset of the wafer 2G during the pressing process of the wafer due to the displacement of the clamp stroke or the rubber deformation, and solve the relative positional movement of the wafer 20 and the lower annular gasket, so that the wafer 2 〇 The bottom yttria layer 21 has the wrong etching width; further solving the conventional technology requires replacing the corresponding annular gasket and the working support platform according to the wafer size. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a preferred embodiment of the present invention. Figure 2 is an exploded perspective view of a preferred embodiment of the present invention. Fig. 3 is a schematic view showing the operation of a slider of a preferred embodiment of the present invention. 7 M431430 [Key component symbol description] 10 Upper splint 20 21 Ceria layer 22 30 Lower splint 40 41 Sliding clamp 42 43 Vertical bar 44 45 Bump 50 Wafer Gas introduction area Base Socket groove Slide bar Work platform