JP2018070440A5 - - Google Patents
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- Publication number
- JP2018070440A5 JP2018070440A5 JP2017200837A JP2017200837A JP2018070440A5 JP 2018070440 A5 JP2018070440 A5 JP 2018070440A5 JP 2017200837 A JP2017200837 A JP 2017200837A JP 2017200837 A JP2017200837 A JP 2017200837A JP 2018070440 A5 JP2018070440 A5 JP 2018070440A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- carbide epitaxial
- basal plane
- less
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 37
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000001273 butane Substances 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016196636 | 2016-10-04 | ||
| JP2016196636 | 2016-10-04 | ||
| JP2017544970A JP6233555B1 (ja) | 2016-10-04 | 2017-06-05 | 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017544970A Division JP6233555B1 (ja) | 2016-10-04 | 2017-06-05 | 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018070440A JP2018070440A (ja) | 2018-05-10 |
| JP2018070440A5 true JP2018070440A5 (https=) | 2020-07-02 |
| JP6891758B2 JP6891758B2 (ja) | 2021-06-18 |
Family
ID=61831463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017200837A Active JP6891758B2 (ja) | 2016-10-04 | 2017-10-17 | 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10714572B2 (https=) |
| JP (1) | JP6891758B2 (https=) |
| CN (1) | CN109791879B (https=) |
| DE (1) | DE112017005034B4 (https=) |
| WO (1) | WO2018066173A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7310805B2 (ja) | 2018-05-09 | 2023-07-19 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
| JP6585799B1 (ja) | 2018-10-15 | 2019-10-02 | 昭和電工株式会社 | ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法 |
| CN115279956A (zh) | 2019-12-27 | 2022-11-01 | 沃孚半导体公司 | 大直径碳化硅晶片 |
| EP4195239A4 (en) * | 2020-08-28 | 2023-09-27 | Huawei Technologies Co., Ltd. | SUBSTRATE AND POWER AMPLIFICATION DEVICE |
| US12125701B2 (en) * | 2020-12-15 | 2024-10-22 | Wolfspeed, Inc. | Large dimension silicon carbide single crystalline materials with reduced crystallographic stress |
| CN113388888B (zh) * | 2021-06-22 | 2022-07-12 | 山东天岳先进科技股份有限公司 | 一种碳化硅晶体、其使用的籽晶及籽晶的制备方法 |
| WO2024080071A1 (ja) * | 2022-10-11 | 2024-04-18 | 住友電気工業株式会社 | 炭化珪素結晶基板、エピタキシャル基板および半導体装置の製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7314520B2 (en) * | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
| KR101287787B1 (ko) | 2007-09-12 | 2013-07-18 | 쇼와 덴코 가부시키가이샤 | 에피택셜 ＳｉＣ 단결정 기판 및 에피택셜 ＳｉＣ 단결정 기판의 제조 방법 |
| CN101803100A (zh) | 2007-09-12 | 2010-08-11 | 大金工业株式会社 | 电解液 |
| JP2010184833A (ja) * | 2009-02-12 | 2010-08-26 | Denso Corp | 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ |
| BR112012021991A2 (pt) | 2010-03-01 | 2020-09-01 | The University Of British Columbia | policlicerol hiperramificado uso de um poliglicerol hipermanificado, método de adiministração de uma força biologicamente ativa a um tecido biológico, composição farmacêutica e método de síntese de um poliglicerol hiperrramificado. |
| JP6025306B2 (ja) * | 2011-05-16 | 2016-11-16 | 株式会社豊田中央研究所 | ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス |
| JP5958949B2 (ja) * | 2011-05-26 | 2016-08-02 | 一般財団法人電力中央研究所 | 炭化珪素基板、炭化珪素ウェハ、炭化珪素ウェハの製造方法及び炭化珪素半導体素子 |
| US8940614B2 (en) * | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
| JP6122704B2 (ja) * | 2013-06-13 | 2017-04-26 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| CN106715767A (zh) * | 2014-10-01 | 2017-05-24 | 住友电气工业株式会社 | 碳化硅外延基板 |
| DE112015006024B9 (de) * | 2015-01-21 | 2025-04-24 | Sumitomo Electric Industries, Ltd. | Verfahren zum Herstellen eines Siliziumkarbid-Einkristalls, Siliziumkarbid-Einkristallsubstrat und Siliziumkarbid-Epitaxiesubstrat |
| JP2016166112A (ja) * | 2015-03-10 | 2016-09-15 | 株式会社東芝 | 半導体基板及び半導体装置 |
| KR102106722B1 (ko) * | 2015-07-29 | 2020-05-04 | 쇼와 덴코 가부시키가이샤 | 에피택셜 탄화규소 단결정 웨이퍼의 제조 방법 |
| US20170321345A1 (en) * | 2016-05-06 | 2017-11-09 | Ii-Vi Incorporated | Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof |
-
2017
- 2017-06-05 WO PCT/JP2017/020887 patent/WO2018066173A1/ja not_active Ceased
- 2017-06-05 US US16/333,308 patent/US10714572B2/en active Active
- 2017-06-05 CN CN201780061273.9A patent/CN109791879B/zh active Active
- 2017-06-05 DE DE112017005034.0T patent/DE112017005034B4/de active Active
- 2017-10-17 JP JP2017200837A patent/JP6891758B2/ja active Active
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