JP6891758B2 - 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法 - Google Patents

炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法 Download PDF

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JP6891758B2
JP6891758B2 JP2017200837A JP2017200837A JP6891758B2 JP 6891758 B2 JP6891758 B2 JP 6891758B2 JP 2017200837 A JP2017200837 A JP 2017200837A JP 2017200837 A JP2017200837 A JP 2017200837A JP 6891758 B2 JP6891758 B2 JP 6891758B2
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silicon carbide
carbide epitaxial
basal plane
dislocation
epitaxial substrate
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JP2018070440A (ja
JP2018070440A5 (https=
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勉 堀
勉 堀
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Sumitomo Electric Industries Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
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    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
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    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/34—Deposited materials, e.g. layers
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  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2017200837A 2016-10-04 2017-10-17 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法 Active JP6891758B2 (ja)

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JP2016196636 2016-10-04
JP2016196636 2016-10-04
JP2017544970A JP6233555B1 (ja) 2016-10-04 2017-06-05 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法

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JP7310805B2 (ja) 2018-05-09 2023-07-19 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6585799B1 (ja) 2018-10-15 2019-10-02 昭和電工株式会社 ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法
EP4081674A1 (en) 2019-12-27 2022-11-02 Wolfspeed, Inc. Large diameter silicon carbide wafers
CN116034485B (zh) * 2020-08-28 2025-10-03 华为技术有限公司 一种衬底及功率放大器件
US12125701B2 (en) 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
CN113388888B (zh) * 2021-06-22 2022-07-12 山东天岳先进科技股份有限公司 一种碳化硅晶体、其使用的籽晶及籽晶的制备方法
JPWO2024080071A1 (https=) * 2022-10-11 2024-04-18

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US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US20110008681A1 (en) 2007-09-12 2011-01-13 Meiten Koh Electrolytic solution
US8293623B2 (en) * 2007-09-12 2012-10-23 Showa Denko K.K. Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate
JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
CN102906157B (zh) 2010-03-01 2016-08-24 不列颠哥伦比亚大学 衍生的超支化聚丙三醇
JP6025306B2 (ja) * 2011-05-16 2016-11-16 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
JP5958949B2 (ja) * 2011-05-26 2016-08-02 一般財団法人電力中央研究所 炭化珪素基板、炭化珪素ウェハ、炭化珪素ウェハの製造方法及び炭化珪素半導体素子
US8940614B2 (en) * 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP6122704B2 (ja) * 2013-06-13 2017-04-26 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
WO2016051975A1 (ja) 2014-10-01 2016-04-07 住友電気工業株式会社 炭化珪素エピタキシャル基板
WO2016117251A1 (ja) * 2015-01-21 2016-07-28 住友電気工業株式会社 結晶成長装置、炭化珪素単結晶の製造方法、炭化珪素単結晶基板および炭化珪素エピタキシャル基板
JP2016166112A (ja) * 2015-03-10 2016-09-15 株式会社東芝 半導体基板及び半導体装置
WO2017018533A1 (ja) * 2015-07-29 2017-02-02 新日鐵住金株式会社 エピタキシャル炭化珪素単結晶ウェハの製造方法
US20170321345A1 (en) * 2016-05-06 2017-11-09 Ii-Vi Incorporated Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof

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WO2018066173A1 (ja) 2018-04-12
DE112017005034B4 (de) 2026-01-22
JP2018070440A (ja) 2018-05-10
CN109791879A (zh) 2019-05-21
CN109791879B (zh) 2023-07-25
US20190245044A1 (en) 2019-08-08
US10714572B2 (en) 2020-07-14
DE112017005034T5 (de) 2019-06-27

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