JP2018050041A5 - - Google Patents
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- Publication number
- JP2018050041A5 JP2018050041A5 JP2017170127A JP2017170127A JP2018050041A5 JP 2018050041 A5 JP2018050041 A5 JP 2018050041A5 JP 2017170127 A JP2017170127 A JP 2017170127A JP 2017170127 A JP2017170127 A JP 2017170127A JP 2018050041 A5 JP2018050041 A5 JP 2018050041A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- pump
- flow rate
- cleaning
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 29
- 238000004140 cleaning Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 10
- 239000003701 inert diluent Substances 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 239000002243 precursor Substances 0.000 claims description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 4
- 238000009825 accumulation Methods 0.000 claims description 4
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000001272 nitrous oxide Substances 0.000 claims description 2
- 239000012686 silicon precursor Substances 0.000 claims description 2
- 239000002699 waste material Substances 0.000 claims description 2
- 238000002485 combustion reaction Methods 0.000 claims 2
- 239000000376 reactant Substances 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000002910 solid waste Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/263,838 | 2016-09-13 | ||
| US15/263,838 US11332824B2 (en) | 2016-09-13 | 2016-09-13 | Systems and methods for reducing effluent build-up in a pumping exhaust system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018050041A JP2018050041A (ja) | 2018-03-29 |
| JP2018050041A5 true JP2018050041A5 (enExample) | 2018-05-17 |
Family
ID=61559644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017170127A Pending JP2018050041A (ja) | 2016-09-13 | 2017-09-05 | ポンプ排気システムにおける廃物の蓄積を低減するためのシステムおよび方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11332824B2 (enExample) |
| JP (1) | JP2018050041A (enExample) |
| KR (2) | KR102425423B1 (enExample) |
| CN (2) | CN107863307B (enExample) |
| SG (2) | SG10202102425UA (enExample) |
| TW (1) | TWI777975B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016182648A1 (en) * | 2015-05-08 | 2016-11-17 | Applied Materials, Inc. | Method for controlling a processing system |
| KR102477302B1 (ko) * | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
| US11332824B2 (en) * | 2016-09-13 | 2022-05-17 | Lam Research Corporation | Systems and methods for reducing effluent build-up in a pumping exhaust system |
| CN108591826A (zh) * | 2018-04-23 | 2018-09-28 | 睿力集成电路有限公司 | 气体处理系统及处理方法 |
| US10889891B2 (en) * | 2018-05-04 | 2021-01-12 | Applied Materials, Inc. | Apparatus for gaseous byproduct abatement and foreline cleaning |
| US12025484B2 (en) * | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| KR102734964B1 (ko) * | 2018-06-15 | 2024-11-26 | 램 리써치 코포레이션 | 기판 프로세싱 시스템의 배기부의 펌프로부터 증착물들을 제거하기 위한 세정 시스템 |
| US10388513B1 (en) * | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US12057300B2 (en) | 2019-03-11 | 2024-08-06 | Lam Research Corporation | Apparatus for cleaning plasma chambers |
| US20210071296A1 (en) * | 2019-09-06 | 2021-03-11 | Asm Ip Holding B.V. | Exhaust component cleaning method and substrate processing apparatus including exhaust component |
| US11779949B2 (en) | 2019-10-30 | 2023-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor process chamber contamination prevention system |
| KR20230025590A (ko) * | 2021-08-13 | 2023-02-22 | 삼성디스플레이 주식회사 | 배출 방법, 배출 시스템 및 이를 포함하는 기판 처리 장치 |
| KR20240115465A (ko) * | 2023-01-19 | 2024-07-26 | 삼성전자주식회사 | 플라즈마 소스를 갖는 배기가스 처리 장치 및 이를 포함하는 기판 처리 장치 |
| JP2025035359A (ja) * | 2023-09-01 | 2025-03-13 | 株式会社荏原製作所 | 除害反応器への排ガスの流路システム |
Family Cites Families (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3125207B2 (ja) * | 1995-07-07 | 2001-01-15 | 東京エレクトロン株式会社 | 真空処理装置 |
| US6193802B1 (en) * | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment |
| US6045618A (en) * | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
| US6187072B1 (en) * | 1995-09-25 | 2001-02-13 | Applied Materials, Inc. | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions |
| US6194628B1 (en) * | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Method and apparatus for cleaning a vacuum line in a CVD system |
| US6374831B1 (en) * | 1999-02-04 | 2002-04-23 | Applied Materials, Inc. | Accelerated plasma clean |
| US6255222B1 (en) * | 1999-08-24 | 2001-07-03 | Applied Materials, Inc. | Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process |
| DE19959814B4 (de) * | 1999-12-11 | 2005-09-15 | Benteler Ag | Achsträger für Kraftfahrzeuge |
| JP2001185539A (ja) * | 1999-12-24 | 2001-07-06 | Toshiba Corp | ガス回収システムおよびガス回収方法 |
| US6329297B1 (en) * | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
| US20020185067A1 (en) * | 2001-06-07 | 2002-12-12 | International Business Machines Corporation | Apparatus and method for in-situ cleaning of a throttle valve in a CVD system |
| US6896764B2 (en) * | 2001-11-28 | 2005-05-24 | Tokyo Electron Limited | Vacuum processing apparatus and control method thereof |
| JP3527915B2 (ja) * | 2002-03-27 | 2004-05-17 | 株式会社ルネサステクノロジ | Cvd装置およびそれを用いたcvd装置のクリーニング方法 |
| KR100479627B1 (ko) * | 2002-05-25 | 2005-04-06 | 유니셈 주식회사 | 폐가스 처리용 습식 전처리 장치 및 그 전처리 방법 |
| KR100447284B1 (ko) * | 2002-07-19 | 2004-09-07 | 삼성전자주식회사 | 화학기상증착 챔버의 세정 방법 |
| US7456116B2 (en) * | 2002-09-19 | 2008-11-25 | Applied Materials, Inc. | Gap-fill depositions in the formation of silicon containing dielectric materials |
| TW200734482A (en) * | 2005-03-18 | 2007-09-16 | Applied Materials Inc | Electroless deposition process on a contact containing silicon or silicide |
| GB0505674D0 (en) * | 2005-03-22 | 2005-04-27 | Boc Group Plc | Trap device |
| JP2008540840A (ja) * | 2005-05-09 | 2008-11-20 | エイエスエム・ジェニテック・コリア・リミテッド | 複数の気体流入口を有する原子層堆積装置の反応器 |
| CN102148217A (zh) * | 2005-06-20 | 2011-08-10 | 国立大学法人东北大学 | 层间绝缘膜、布线结构以及它们的制造方法 |
| US20070267143A1 (en) * | 2006-05-16 | 2007-11-22 | Applied Materials, Inc. | In situ cleaning of CVD system exhaust |
| US20080081130A1 (en) * | 2006-09-29 | 2008-04-03 | Applied Materials, Inc. | Treatment of effluent in the deposition of carbon-doped silicon |
| CN101678407A (zh) * | 2007-05-25 | 2010-03-24 | 应用材料股份有限公司 | 用于减量系统的有效操作的方法与装置 |
| US20090017206A1 (en) * | 2007-06-16 | 2009-01-15 | Applied Materials, Inc. | Methods and apparatus for reducing the consumption of reagents in electronic device manufacturing processes |
| KR20090001030A (ko) * | 2007-06-29 | 2009-01-08 | 삼성전자주식회사 | 반도체 제조설비 |
| EP2193541A1 (en) * | 2007-09-18 | 2010-06-09 | L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of forming silicon-containing films |
| US7967913B2 (en) * | 2008-10-22 | 2011-06-28 | Applied Materials, Inc. | Remote plasma clean process with cycled high and low pressure clean steps |
| US20100119420A1 (en) * | 2008-11-07 | 2010-05-13 | Applied Materials, Inc. | Abatement system having enhanced effluent scrub and moisture control |
| EP2399316A1 (en) * | 2009-02-17 | 2011-12-28 | McAlister Technologies, LLC | Apparatus and method for controlling nucleation during electrolysis |
| US8747762B2 (en) * | 2009-12-03 | 2014-06-10 | Applied Materials, Inc. | Methods and apparatus for treating exhaust gas in a processing system |
| JP5843491B2 (ja) * | 2010-06-24 | 2016-01-13 | キヤノン株式会社 | 塗布液、光学部品の製造方法および撮影光学系 |
| CN103052435A (zh) * | 2010-07-30 | 2013-04-17 | 吉坤日矿日石能源株式会社 | 排气处理系统 |
| JP5837351B2 (ja) * | 2010-08-05 | 2015-12-24 | 株式会社荏原製作所 | 排気系システム |
| US20130237063A1 (en) * | 2012-03-09 | 2013-09-12 | Seshasayee Varadarajan | Split pumping method, apparatus, and system |
| US9029264B2 (en) * | 2012-03-14 | 2015-05-12 | Applied Materials, Inc. | Methods for depositing a tin-containing layer on a substrate |
| US9976215B2 (en) * | 2012-05-01 | 2018-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor film formation apparatus and process |
| JP6061545B2 (ja) * | 2012-08-10 | 2017-01-18 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| TWI524388B (zh) * | 2013-12-27 | 2016-03-01 | Hitachi Int Electric Inc | A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium |
| US9240308B2 (en) * | 2014-03-06 | 2016-01-19 | Applied Materials, Inc. | Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system |
| US9230780B2 (en) * | 2014-03-06 | 2016-01-05 | Applied Materials, Inc. | Hall effect enhanced capacitively coupled plasma source |
| US9478408B2 (en) * | 2014-06-06 | 2016-10-25 | Lam Research Corporation | Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging |
| US10157755B2 (en) * | 2015-10-01 | 2018-12-18 | Lam Research Corporation | Purge and pumping structures arranged beneath substrate plane to reduce defects |
| WO2017189194A1 (en) * | 2016-04-26 | 2017-11-02 | Applied Materials, Inc. | Temperature controlled remote plasma clean for exhaust deposit removal |
| US11332824B2 (en) * | 2016-09-13 | 2022-05-17 | Lam Research Corporation | Systems and methods for reducing effluent build-up in a pumping exhaust system |
-
2016
- 2016-09-13 US US15/263,838 patent/US11332824B2/en active Active
-
2017
- 2017-08-31 KR KR1020170110755A patent/KR102425423B1/ko active Active
- 2017-09-05 JP JP2017170127A patent/JP2018050041A/ja active Pending
- 2017-09-08 SG SG10202102425UA patent/SG10202102425UA/en unknown
- 2017-09-08 SG SG10201707317RA patent/SG10201707317RA/en unknown
- 2017-09-12 TW TW106131102A patent/TWI777975B/zh active
- 2017-09-13 CN CN201710822517.2A patent/CN107863307B/zh active Active
- 2017-09-13 CN CN202310877658.XA patent/CN117165920A/zh active Pending
-
2022
- 2022-05-05 US US17/737,121 patent/US12049698B2/en active Active
- 2022-07-21 KR KR1020220090398A patent/KR102549682B1/ko active Active
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