TWI777975B - 用以減少泵抽排氣系統中之排出物積累的系統及方法 - Google Patents

用以減少泵抽排氣系統中之排出物積累的系統及方法 Download PDF

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TWI777975B
TWI777975B TW106131102A TW106131102A TWI777975B TW I777975 B TWI777975 B TW I777975B TW 106131102 A TW106131102 A TW 106131102A TW 106131102 A TW106131102 A TW 106131102A TW I777975 B TWI777975 B TW I777975B
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Taiwan
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gas
exhaust
flow rate
substrate processing
pumping
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TW106131102A
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English (en)
Chinese (zh)
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TW201825776A (zh
Inventor
安東尼奧 薩維爾
史蒂芬 高札
拉密許 謙德拉瑟哈蘭
艾里恩 拉芙依
喬瑟夫 內斯密斯
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美商蘭姆研究公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Treating Waste Gases (AREA)
TW106131102A 2016-09-13 2017-09-12 用以減少泵抽排氣系統中之排出物積累的系統及方法 TWI777975B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/263,838 2016-09-13
US15/263,838 US11332824B2 (en) 2016-09-13 2016-09-13 Systems and methods for reducing effluent build-up in a pumping exhaust system

Publications (2)

Publication Number Publication Date
TW201825776A TW201825776A (zh) 2018-07-16
TWI777975B true TWI777975B (zh) 2022-09-21

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US (2) US11332824B2 (enExample)
JP (1) JP2018050041A (enExample)
KR (2) KR102425423B1 (enExample)
CN (2) CN107863307B (enExample)
SG (2) SG10202102425UA (enExample)
TW (1) TWI777975B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016182648A1 (en) * 2015-05-08 2016-11-17 Applied Materials, Inc. Method for controlling a processing system
KR102477302B1 (ko) * 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
US11332824B2 (en) * 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
CN108591826A (zh) * 2018-04-23 2018-09-28 睿力集成电路有限公司 气体处理系统及处理方法
US10889891B2 (en) 2018-05-04 2021-01-12 Applied Materials, Inc. Apparatus for gaseous byproduct abatement and foreline cleaning
US12025484B2 (en) * 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
CN112534563B (zh) * 2018-06-15 2025-08-05 朗姆研究公司 用于从衬底处理系统的排放装置的泵去除沉积物的清洁系统
US10388513B1 (en) * 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
JP7644019B2 (ja) * 2019-03-11 2025-03-11 ラム リサーチ コーポレーション プラズマチャンバを洗浄するための装置
US20210071296A1 (en) * 2019-09-06 2021-03-11 Asm Ip Holding B.V. Exhaust component cleaning method and substrate processing apparatus including exhaust component
US11779949B2 (en) 2019-10-30 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor process chamber contamination prevention system
KR102964763B1 (ko) * 2021-08-13 2026-05-15 삼성디스플레이 주식회사 배출 방법, 배출 시스템 및 이를 포함하는 기판 처리 장치
KR20240115465A (ko) * 2023-01-19 2024-07-26 삼성전자주식회사 플라즈마 소스를 갖는 배기가스 처리 장치 및 이를 포함하는 기판 처리 장치
JP2025035359A (ja) * 2023-09-01 2025-03-13 株式会社荏原製作所 除害反応器への排ガスの流路システム
TW202618894A (zh) * 2024-05-30 2026-05-01 美商蘭姆研究公司 使自由基物種與未沉積膜前驅物反應之方法及處理機台

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6193802B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6255222B1 (en) * 1999-08-24 2001-07-03 Applied Materials, Inc. Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
US20010015133A1 (en) * 1999-12-24 2001-08-23 Kabushiki Toshiba Gas recovery system and gas recovery method
US20130240478A1 (en) * 2012-03-14 2013-09-19 Applied Materials, Inc. METHODS FOR DEPOSITING A TiN-CONTAINING LAYER ON A SUBSTRATE

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3125207B2 (ja) * 1995-07-07 2001-01-15 東京エレクトロン株式会社 真空処理装置
US6045618A (en) * 1995-09-25 2000-04-04 Applied Materials, Inc. Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6194628B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Method and apparatus for cleaning a vacuum line in a CVD system
US6187072B1 (en) * 1995-09-25 2001-02-13 Applied Materials, Inc. Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions
US6374831B1 (en) * 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
DE19959814B4 (de) * 1999-12-11 2005-09-15 Benteler Ag Achsträger für Kraftfahrzeuge
US6329297B1 (en) * 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US20020185067A1 (en) * 2001-06-07 2002-12-12 International Business Machines Corporation Apparatus and method for in-situ cleaning of a throttle valve in a CVD system
US6896764B2 (en) * 2001-11-28 2005-05-24 Tokyo Electron Limited Vacuum processing apparatus and control method thereof
JP3527915B2 (ja) * 2002-03-27 2004-05-17 株式会社ルネサステクノロジ Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法
KR100479627B1 (ko) * 2002-05-25 2005-04-06 유니셈 주식회사 폐가스 처리용 습식 전처리 장치 및 그 전처리 방법
KR100447284B1 (ko) * 2002-07-19 2004-09-07 삼성전자주식회사 화학기상증착 챔버의 세정 방법
US7456116B2 (en) * 2002-09-19 2008-11-25 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
WO2006102318A2 (en) * 2005-03-18 2006-09-28 Applied Materials, Inc. Electroless deposition process on a contact containing silicon or silicide
GB0505674D0 (en) * 2005-03-22 2005-04-27 Boc Group Plc Trap device
CN101171365B (zh) * 2005-05-09 2010-05-19 Asm吉尼泰克韩国株式会社 多入口原子层沉积反应器
TWI450379B (zh) * 2005-06-20 2014-08-21 國立大學法人 東北大學 層間絕緣膜及配線構造與此等之製造方法
US20070267143A1 (en) * 2006-05-16 2007-11-22 Applied Materials, Inc. In situ cleaning of CVD system exhaust
US20080081130A1 (en) * 2006-09-29 2008-04-03 Applied Materials, Inc. Treatment of effluent in the deposition of carbon-doped silicon
EP2150360A4 (en) * 2007-05-25 2013-01-23 Applied Materials Inc METHOD AND DEVICE FOR EFFICIENT OPERATION OF A REDUCTION SYSTEM
US20090017206A1 (en) * 2007-06-16 2009-01-15 Applied Materials, Inc. Methods and apparatus for reducing the consumption of reagents in electronic device manufacturing processes
KR20090001030A (ko) * 2007-06-29 2009-01-08 삼성전자주식회사 반도체 제조설비
KR20150036815A (ko) * 2007-09-18 2015-04-07 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 규소 함유 막의 형성 방법
US7967913B2 (en) * 2008-10-22 2011-06-28 Applied Materials, Inc. Remote plasma clean process with cycled high and low pressure clean steps
US20100119420A1 (en) * 2008-11-07 2010-05-13 Applied Materials, Inc. Abatement system having enhanced effluent scrub and moisture control
KR101352231B1 (ko) * 2009-02-17 2014-01-15 맥알리스터 테크놀로지즈 엘엘씨 전기분해 중에 핵화를 제어하기 위한 장치 및 방법
US8747762B2 (en) * 2009-12-03 2014-06-10 Applied Materials, Inc. Methods and apparatus for treating exhaust gas in a processing system
JP5843491B2 (ja) * 2010-06-24 2016-01-13 キヤノン株式会社 塗布液、光学部品の製造方法および撮影光学系
CN103052435A (zh) * 2010-07-30 2013-04-17 吉坤日矿日石能源株式会社 排气处理系统
KR101597008B1 (ko) * 2010-08-05 2016-02-23 가부시키가이샤 에바라 세이사꾸쇼 배기 시스템
US20130237063A1 (en) * 2012-03-09 2013-09-12 Seshasayee Varadarajan Split pumping method, apparatus, and system
US9976215B2 (en) * 2012-05-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film formation apparatus and process
JP6061545B2 (ja) * 2012-08-10 2017-01-18 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
TWI524388B (zh) * 2013-12-27 2016-03-01 日立國際電氣股份有限公司 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
US9240308B2 (en) * 2014-03-06 2016-01-19 Applied Materials, Inc. Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system
US9230780B2 (en) * 2014-03-06 2016-01-05 Applied Materials, Inc. Hall effect enhanced capacitively coupled plasma source
US9478408B2 (en) * 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10157755B2 (en) * 2015-10-01 2018-12-18 Lam Research Corporation Purge and pumping structures arranged beneath substrate plane to reduce defects
JP6924775B2 (ja) * 2016-04-26 2021-08-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 排気堆積物の除去のための温度制御された遠隔プラズマ洗浄
US11332824B2 (en) * 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6193802B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6255222B1 (en) * 1999-08-24 2001-07-03 Applied Materials, Inc. Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
US20010015133A1 (en) * 1999-12-24 2001-08-23 Kabushiki Toshiba Gas recovery system and gas recovery method
US20130240478A1 (en) * 2012-03-14 2013-09-19 Applied Materials, Inc. METHODS FOR DEPOSITING A TiN-CONTAINING LAYER ON A SUBSTRATE

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US11332824B2 (en) 2022-05-17
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US12049698B2 (en) 2024-07-30
US20220259725A1 (en) 2022-08-18
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