JP2018041080A5 - - Google Patents
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- JP2018041080A5 JP2018041080A5 JP2017169699A JP2017169699A JP2018041080A5 JP 2018041080 A5 JP2018041080 A5 JP 2018041080A5 JP 2017169699 A JP2017169699 A JP 2017169699A JP 2017169699 A JP2017169699 A JP 2017169699A JP 2018041080 A5 JP2018041080 A5 JP 2018041080A5
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- substrate
- internal stress
- curvature
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- 239000000758 substrate Substances 0.000 claims 234
- 238000000034 method Methods 0.000 claims 78
- 238000005259 measurement Methods 0.000 claims 59
- 238000012937 correction Methods 0.000 claims 56
- 239000000463 material Substances 0.000 claims 17
- 238000005530 etching Methods 0.000 claims 14
- 238000012986 modification Methods 0.000 claims 11
- 230000004048 modification Effects 0.000 claims 11
- 238000000151 deposition Methods 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 10
- 238000005459 micromachining Methods 0.000 claims 9
- 238000003384 imaging method Methods 0.000 claims 8
- 230000005855 radiation Effects 0.000 claims 8
- 229920002120 photoresistant polymer Polymers 0.000 claims 7
- 239000011248 coating agent Substances 0.000 claims 6
- 238000000576 coating method Methods 0.000 claims 6
- 239000002245 particle Substances 0.000 claims 5
- 238000004458 analytical method Methods 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- 238000002513 implantation Methods 0.000 claims 3
- 238000004364 calculation method Methods 0.000 claims 2
- 239000007943 implant Substances 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 238000005457 optimization Methods 0.000 claims 2
- 238000000206 photolithography Methods 0.000 claims 2
- 238000012545 processing Methods 0.000 claims 2
- 238000012546 transfer Methods 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 1
- 238000011161 development Methods 0.000 claims 1
- 230000005670 electromagnetic radiation Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000002040 relaxant effect Effects 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021155236A JP7216785B2 (ja) | 2016-09-05 | 2021-09-24 | 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662383549P | 2016-09-05 | 2016-09-05 | |
| US62/383,549 | 2016-09-05 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021155236A Division JP7216785B2 (ja) | 2016-09-05 | 2021-09-24 | 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018041080A JP2018041080A (ja) | 2018-03-15 |
| JP2018041080A5 true JP2018041080A5 (enExample) | 2020-10-22 |
| JP7164289B2 JP7164289B2 (ja) | 2022-11-01 |
Family
ID=61280932
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017169699A Active JP7164289B2 (ja) | 2016-09-05 | 2017-09-04 | 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング |
| JP2021155236A Active JP7216785B2 (ja) | 2016-09-05 | 2021-09-24 | 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021155236A Active JP7216785B2 (ja) | 2016-09-05 | 2021-09-24 | 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング |
Country Status (5)
| Country | Link |
|---|---|
| US (5) | US10453692B2 (enExample) |
| JP (2) | JP7164289B2 (enExample) |
| KR (1) | KR102467979B1 (enExample) |
| CN (1) | CN107799451B (enExample) |
| TW (3) | TWI776817B (enExample) |
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| CN112485971B (zh) * | 2015-04-21 | 2024-12-03 | 科磊股份有限公司 | 用于倾斜装置设计的计量目标设计 |
| JP7164289B2 (ja) | 2016-09-05 | 2022-11-01 | 東京エレクトロン株式会社 | 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング |
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| WO2019182913A1 (en) * | 2018-03-20 | 2019-09-26 | Tokyo Electron Limited | Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same |
| KR102812035B1 (ko) | 2018-04-10 | 2025-05-22 | 램 리써치 코포레이션 | 레지스트 및 에칭 모델링 |
| US11164768B2 (en) * | 2018-04-27 | 2021-11-02 | Kla Corporation | Process-induced displacement characterization during semiconductor production |
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| KR102746093B1 (ko) * | 2018-09-28 | 2024-12-23 | 램 리써치 코포레이션 | 비대칭 웨이퍼 보우 보상 |
| US10896821B2 (en) * | 2018-09-28 | 2021-01-19 | Lam Research Corporation | Asymmetric wafer bow compensation by physical vapor deposition |
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| JP7129888B2 (ja) * | 2018-11-07 | 2022-09-02 | 東京エレクトロン株式会社 | 成膜方法及び半導体製造装置 |
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| JP2020174076A (ja) * | 2019-04-08 | 2020-10-22 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、および成膜システム |
| CN110246788B (zh) * | 2019-06-28 | 2020-05-19 | 英特尔半导体(大连)有限公司 | 用于在晶圆沉积薄膜的设备 |
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| CN110517968B (zh) * | 2019-08-19 | 2022-12-20 | 西安奕斯伟材料科技有限公司 | 一种翘曲度的控制方法及装置 |
| CN110620057B (zh) * | 2019-09-12 | 2021-12-07 | 中国科学院微电子研究所 | 一种三维器件的套刻误差补偿方法及系统 |
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| US12276922B2 (en) * | 2020-05-22 | 2025-04-15 | Tokyo Electron Limited | Backside deposition tuning of stress to control wafer bow in semiconductor processing |
| US11473199B2 (en) | 2020-06-10 | 2022-10-18 | Sandisk Technologies Llc | Method and apparatus for depositing a multi-sector film on backside of a semiconductor wafer |
| US11702750B2 (en) * | 2020-06-10 | 2023-07-18 | Sandisk Technologies Llc | Method and apparatus for depositing a multi-sector film on backside of a semiconductor wafer |
| US11830778B2 (en) | 2020-11-12 | 2023-11-28 | International Business Machines Corporation | Back-side wafer modification |
| US11721551B2 (en) * | 2021-01-26 | 2023-08-08 | Tokyo Electron Limited | Localized stress regions for three-dimension chiplet formation |
| CN113068326B (zh) * | 2021-03-29 | 2022-09-30 | 北京小米移动软件有限公司 | 一种焊接质量处理方法及装置、电路板 |
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| CN115513068B (zh) * | 2022-09-22 | 2024-08-27 | 上海美维科技有限公司 | 板级rdl封装结构及其制备方法 |
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| JP7164289B2 (ja) | 2016-09-05 | 2022-11-01 | 東京エレクトロン株式会社 | 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング |
-
2017
- 2017-09-04 JP JP2017169699A patent/JP7164289B2/ja active Active
- 2017-09-05 TW TW106130214A patent/TWI776817B/zh active
- 2017-09-05 US US15/695,957 patent/US10453692B2/en active Active
- 2017-09-05 TW TW113130112A patent/TWI888250B/zh active
- 2017-09-05 KR KR1020170113329A patent/KR102467979B1/ko active Active
- 2017-09-05 TW TW111117276A patent/TWI887546B/zh active
- 2017-09-05 CN CN201710791991.3A patent/CN107799451B/zh active Active
- 2017-09-05 US US15/695,961 patent/US10475657B2/en active Active
- 2017-09-05 US US15/695,968 patent/US10157747B2/en active Active
- 2017-09-05 US US15/695,966 patent/US10431468B2/en active Active
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2019
- 2019-10-23 US US16/661,655 patent/US10811265B2/en active Active
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2021
- 2021-09-24 JP JP2021155236A patent/JP7216785B2/ja active Active
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