KR102467979B1 - 반도체 프로세싱에서 오버레이를 제어하기 위해 보우를 제어하기 위한 응력의 위치-특정 튜닝 - Google Patents
반도체 프로세싱에서 오버레이를 제어하기 위해 보우를 제어하기 위한 응력의 위치-특정 튜닝 Download PDFInfo
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- KR102467979B1 KR102467979B1 KR1020170113329A KR20170113329A KR102467979B1 KR 102467979 B1 KR102467979 B1 KR 102467979B1 KR 1020170113329 A KR1020170113329 A KR 1020170113329A KR 20170113329 A KR20170113329 A KR 20170113329A KR 102467979 B1 KR102467979 B1 KR 102467979B1
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- substrate
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- internal stresses
- correction pattern
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- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- Engineering & Computer Science (AREA)
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- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Saccharide Compounds (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662383549P | 2016-09-05 | 2016-09-05 | |
| US62/383,549 | 2016-09-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180027382A KR20180027382A (ko) | 2018-03-14 |
| KR102467979B1 true KR102467979B1 (ko) | 2022-11-16 |
Family
ID=61280932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170113329A Active KR102467979B1 (ko) | 2016-09-05 | 2017-09-05 | 반도체 프로세싱에서 오버레이를 제어하기 위해 보우를 제어하기 위한 응력의 위치-특정 튜닝 |
Country Status (5)
| Country | Link |
|---|---|
| US (5) | US10453692B2 (enExample) |
| JP (2) | JP7164289B2 (enExample) |
| KR (1) | KR102467979B1 (enExample) |
| CN (1) | CN107799451B (enExample) |
| TW (3) | TWI776817B (enExample) |
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| CN112485971B (zh) * | 2015-04-21 | 2024-12-03 | 科磊股份有限公司 | 用于倾斜装置设计的计量目标设计 |
| JP7164289B2 (ja) | 2016-09-05 | 2022-11-01 | 東京エレクトロン株式会社 | 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング |
| US10622233B2 (en) * | 2016-09-05 | 2020-04-14 | Tokyo Electron Limited | Amelioration of global wafer distortion based on determination of localized distortions of a semiconductor wafer |
| US10770327B2 (en) * | 2017-07-28 | 2020-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for correcting non-ideal wafer topography |
| EP3540767A1 (en) * | 2018-03-16 | 2019-09-18 | ASML Netherlands B.V. | Inspection system, lithographic apparatus, and inspection method |
| WO2019182913A1 (en) * | 2018-03-20 | 2019-09-26 | Tokyo Electron Limited | Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same |
| KR102812035B1 (ko) | 2018-04-10 | 2025-05-22 | 램 리써치 코포레이션 | 레지스트 및 에칭 모델링 |
| US11164768B2 (en) * | 2018-04-27 | 2021-11-02 | Kla Corporation | Process-induced displacement characterization during semiconductor production |
| US10790232B2 (en) * | 2018-09-15 | 2020-09-29 | International Business Machines Corporation | Controlling warp in semiconductor laminated substrates with conductive material layout and orientation |
| WO2020068254A1 (en) * | 2018-09-25 | 2020-04-02 | Applied Materials, Inc. | Methods and apparatus to eliminate wafer bow for cvd and patterning hvm systems |
| KR102746093B1 (ko) * | 2018-09-28 | 2024-12-23 | 램 리써치 코포레이션 | 비대칭 웨이퍼 보우 보상 |
| US10896821B2 (en) * | 2018-09-28 | 2021-01-19 | Lam Research Corporation | Asymmetric wafer bow compensation by physical vapor deposition |
| US10903070B2 (en) * | 2018-09-28 | 2021-01-26 | Lam Research Corporation | Asymmetric wafer bow compensation by chemical vapor deposition |
| JP7129888B2 (ja) * | 2018-11-07 | 2022-09-02 | 東京エレクトロン株式会社 | 成膜方法及び半導体製造装置 |
| US10847408B2 (en) * | 2019-01-31 | 2020-11-24 | Sandisk Technologies Llc | Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip |
| US11114406B2 (en) | 2019-01-31 | 2021-09-07 | Sandisk Technologies Llc | Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip |
| US11036147B2 (en) * | 2019-03-20 | 2021-06-15 | Kla Corporation | System and method for converting backside surface roughness to frontside overlay |
| JP2020174076A (ja) * | 2019-04-08 | 2020-10-22 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、および成膜システム |
| CN110246788B (zh) * | 2019-06-28 | 2020-05-19 | 英特尔半导体(大连)有限公司 | 用于在晶圆沉积薄膜的设备 |
| US11990334B2 (en) * | 2019-07-19 | 2024-05-21 | Tokyo Electron Limited | Method for tuning stress transitions of films on a substrate |
| CN110517968B (zh) * | 2019-08-19 | 2022-12-20 | 西安奕斯伟材料科技有限公司 | 一种翘曲度的控制方法及装置 |
| CN110620057B (zh) * | 2019-09-12 | 2021-12-07 | 中国科学院微电子研究所 | 一种三维器件的套刻误差补偿方法及系统 |
| JP7336369B2 (ja) * | 2019-11-25 | 2023-08-31 | 株式会社Screenホールディングス | 基板支持装置、熱処理装置、基板支持方法、熱処理方法 |
| US12272608B2 (en) | 2020-01-03 | 2025-04-08 | Lam Research Corporation | Station-to-station control of backside bow compensation deposition |
| WO2021154641A1 (en) * | 2020-01-30 | 2021-08-05 | Lam Research Corporation | Uv cure for local stress modulation |
| WO2021178310A1 (en) * | 2020-03-05 | 2021-09-10 | Lam Research Corporation | Control of wafer bow during integrated circuit processing |
| DE102020106768B4 (de) | 2020-03-12 | 2023-06-15 | Institut Für Nanophotonik Göttingen E.V. | Verfahren zur umformenden Bearbeitung eines Trägersubstrates für ein optisches Funktionsbauteil |
| JP2021149000A (ja) * | 2020-03-19 | 2021-09-27 | キオクシア株式会社 | 露光方法、露光装置、及び半導体装置の製造方法 |
| US11569134B2 (en) * | 2020-04-14 | 2023-01-31 | International Business Machines Corporation | Wafer backside engineering for wafer stress control |
| JP7384106B2 (ja) * | 2020-04-17 | 2023-11-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
| KR20210131798A (ko) * | 2020-04-24 | 2021-11-03 | 삼성전자주식회사 | Euv 노광 장치, 및 그 노광 장치를 이용한 오버레이 보정 방법과 반도체 소자 제조방법 |
| US12276922B2 (en) * | 2020-05-22 | 2025-04-15 | Tokyo Electron Limited | Backside deposition tuning of stress to control wafer bow in semiconductor processing |
| US11473199B2 (en) | 2020-06-10 | 2022-10-18 | Sandisk Technologies Llc | Method and apparatus for depositing a multi-sector film on backside of a semiconductor wafer |
| US11702750B2 (en) * | 2020-06-10 | 2023-07-18 | Sandisk Technologies Llc | Method and apparatus for depositing a multi-sector film on backside of a semiconductor wafer |
| US11830778B2 (en) | 2020-11-12 | 2023-11-28 | International Business Machines Corporation | Back-side wafer modification |
| US11721551B2 (en) * | 2021-01-26 | 2023-08-08 | Tokyo Electron Limited | Localized stress regions for three-dimension chiplet formation |
| CN113068326B (zh) * | 2021-03-29 | 2022-09-30 | 北京小米移动软件有限公司 | 一种焊接质量处理方法及装置、电路板 |
| US20220336226A1 (en) * | 2021-04-15 | 2022-10-20 | Tokyo Electron Limited | Method of correcting wafer bow using a direct write stress film |
| US12217974B2 (en) * | 2021-04-26 | 2025-02-04 | Applied Materials, Inc. | Localized stress modulation by implant to back of wafer |
| EP4331006A4 (en) * | 2021-04-27 | 2025-03-12 | Applied Materials, Inc. | Stress and overlay management for semiconductor processing |
| US12469725B2 (en) * | 2021-06-27 | 2025-11-11 | Delta Design, Inc. | Method for determining corrective film pattern to reduce semiconductor wafer bow |
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