JP2018040969A - 電気光学装置、電子機器 - Google Patents
電気光学装置、電子機器 Download PDFInfo
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- JP2018040969A JP2018040969A JP2016175292A JP2016175292A JP2018040969A JP 2018040969 A JP2018040969 A JP 2018040969A JP 2016175292 A JP2016175292 A JP 2016175292A JP 2016175292 A JP2016175292 A JP 2016175292A JP 2018040969 A JP2018040969 A JP 2018040969A
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Abstract
【解決手段】電気光学装置としての液晶装置100は、素子基板10の基材10s上において、TFT30のゲート電極30gとドレイン電極118aとの間に設けられた第1シールド層116と、ドレイン電極118aと信号線としてのデータ線6との間に設けられた第2シールド層122とを有し、ドレイン電極118aの一部と第1誘電体層121と第2シールド層122とにより第1保持容量16Aが構成されている。
【選択図】図6
Description
また、特許文献1には、薄膜トランジスターのソース・ドレインとなる半導体層と、ゲート絶縁膜と、シールド電極とを重ね合せて配置することで保持容量部を構成する例が示されている。
本適用例によれば、ゲート電極とドレイン電極との間に固体電位が与えられる第1シールド層が配置されることで、ゲート電極の電位の切り替えによってドレイン電極の電位が変動する現象(プッシュダウンと呼ばれる)の発生を防止することができる。
また、ドレイン電極と信号線との間に同じく固定電位が与えられる第2シールド層が配置されることで、信号線に与えられる画像信号に係る電位によってドレイン電極の電位が変動することにより生ずるクロストークを防止することができる。
また、ドレイン電極の一部と第1誘電体層と第2シールド層とにより第1保持容量が構成される。
すなわち、2つのシールド層によりドレイン電極の電位の変動を防止すると共に、保持容量を確保し、優れた表示品質を実現可能な電気光学装置を提供することができる。加えて、2つのシールド層や第1保持容量を含む複数の配線層を設けても、素子基板における配線構造が複雑になることを避けることができる。
また、ドレイン電極と信号線との間に同じく固定電位が与えられる第2シールド層が配置されることで、信号線に与えられる画像信号に係る電位によってドレイン電極の電位が変動することにより生ずるクロストークを防止することができる。
また、ドレイン電極の一部と第1誘電体層と第2シールド層とにより第1保持容量が構成される。加えて、ドレイン電極と第1誘電体層との間に配置された絶縁性の突起部と重なる第2シールド層の部分で固定電位配線との電気的な接続が行われる。したがって、突起部と重ならない第2シールド層の部分と固定電位配線とを例えばコンタクトホールで接続する場合に比べて、接続に係るコンタクトホールの深さを浅くすることができる。コンタクトホールの深さが浅くなれば、コンタクトホールのアスペクト比の関係から、素子基板の平面視におけるコンタクトホールの大きさを小さくすることができる。コンタクトホールは表示に影響を及ぼさない非開口領域に形成する必要があることから、コンタクトホールの大きさを小さくできることは、非開口領域が狭くても容易にコンタクトホールを設けることが可能となる。したがって、このような2つのシールド層と第1保持容量とを素子基板に設けても、画素において所望の開口率を確保することが可能である。
すなわち、2つのシールド層によりドレイン電極の電位の変動を防止すると共に、保持容量を確保し、優れた表示品質を実現可能な電気光学装置を提供することができる。加えて、2つのシールド層や第1保持容量を含む複数の配線層を設けても、素子基板における配線構造が複雑になることを避け、明るい表示が可能な電気光学装置を提供することができる。
この構成によれば、第1シールド層はゲート電極として機能する走査線と重なって第1の方向に延在しているため、ドレイン電極の電位のプッシュダウンを確実に防止できる。
この構成によれば、信号線と画素電極との間には固定電位配線が存在するので、信号線の電位によって画素電極の電位が変動することを防止することができる。
この構成によれば、第1保持容量に加えて第2保持容量を備えることにより、画素電極の電位の変動をより抑えることができる。さらに、第2保持容量は、固定電位配線と画素電極との間の層間絶縁膜に設けられたトレンチ部を含んで設けられるので、第1容量電極を平板状とする場合に比べて、非開口領域が狭くなっても所望の電気容量を確保し易くなる。
この構成によれば、第1シールド層や第2シールド層に与える固定電位を共通電極の電位と共用化できることから、電気回路における構成を簡素化できる。
本適用例によれば、優れた表示品質を実現可能な電気光学装置を備えていることから、見栄えのよい電子機器を提供することができる。
<電気光学装置>
まず、本実施形態の電気光学装置としての液晶装置の構成について、図1〜図3を参照して説明する。図1は液晶装置の構成を示す概略平面図、図2は図1に示す液晶装置のH−H’線に沿った概略断面、図3は液晶装置の電気的な構成を示す等価回路図である。
図4に示すように、液晶装置100における画素Pは、例えば平面視で略四角形の開口領域を有する。開口領域は、X方向とY方向とに延在し格子状に設けられた遮光性の非開口領域により囲まれている。
図5は図4のA−A’線に沿った素子基板の構造を示す概略断面図、図6は図4のB−B’線に沿った素子基板の構造を示す概略断面図である。詳しくは、図4のA−A’線は非開口領域の交差部をX方向に横切ると共に、画素電極15のコンタクトホール136を横切る線分である。図4のB−B’線は非開口領域に配置されたTFT30をY方向に横切る線分である。なお、図5及び図6は、素子基板10の構造をわかり易く説明するための概略断面図であって、厳密に上記A−A’線やB−B’線に沿った断面図ではない。
続いて、第1層間絶縁膜112上にTFT30の半導体層30aが形成される。半導体層30aは例えばポリシリコンからなり、不純物イオンが選択的に注入されて、図6に示すように、第1ソース・ドレイン領域30d、チャネル領域30c、第2ソース・ドレイン領域30sを含むLDD(Lightly Doped Drain)構造が構築されている。半導体層30aの膜厚は例えばおよそ40nmである。
そして、TFT30のゲート電極30g、ゲート絶縁膜113を覆う第2層間絶縁膜115が形成される。第2層間絶縁膜115は例えば酸化シリコンを用いて形成され、膜厚は例えばおよそ300nmである。
次に、第1シールド層116と固定電位が与えられる引き回し配線との電気的な接続について、図14〜図17を参照して説明する。図14は第1シールド層と引き回し配線との接続状態を示す概略平面図、図15は図14のC−C’線に沿った第1シールド層と引き回し配線との接続構造を示す概略断面図である。図16は第1シールド層と中継層との接続方法の一例を示す概略断面図、図17は第1シールド層と中継層との接続方法の他の例を示す概略断面図である。
(1)素子基板10の基材10s上において、ゲート電極30g(配線114)とドレイン電極118aとの間に固体電位が与えられる第1シールド層116が配置されることで、ゲート電極30gの電位の切り替えによってドレイン電極118aの電位が変動するプッシュダウンの発生を防止することができる。例えば、フルハイビジョンや4Kなどに対応して液晶装置100の表示領域E1に配置される画素Pの数が増えると、一定の走査期間内にゲート電極30gに与えられる走査信号SC1,SC2,…,SCmがより高速になるため、プッシュダウンの発生を確実に防止できる効果は特に有効である。
すなわち、2つのシールド層116,122によりドレイン電極118aの電位の変動を防止すると共に、第1保持容量16Aを確保し、優れた表示品質を実現可能な電気光学装置としての液晶装置100を提供することができる。加えて、2つのシールド層116,122や第1保持容量16Aを含む複数の配線層を設けても、素子基板10における配線構造が複雑になることを避け、明るい表示が可能な液晶装置100を提供することができる。
<電子機器>
次に、本実施形態の電気光学装置としての液晶装置100が適用された電子機器としての投射型表示装置について、図18を参照して説明する。図18は投射型表示装置の構成を示す概略図である。
ダイクロイックミラー1105で反射した緑色光(G)は、リレーレンズ1204を経由して液晶ライトバルブ1220に入射する。
ダイクロイックミラー1105を透過した青色光(B)は、3つのリレーレンズ1201,1202,1203と2つの反射ミラー1107,1108とからなる導光系を経由して液晶ライトバルブ1230に入射する。
Claims (7)
- 複数の画素ごとの画素電極及び薄膜トランジスターと、走査線と、信号線とが設けられた素子基板を備えた電気光学装置であって、
前記素子基板上において、
前記薄膜トランジスターのゲート電極と前記信号線との間に配置されたドレイン電極と、
前記ゲート電極と前記ドレイン電極との間に配置され、固定電位が与えられる第1シールド層と、
前記ドレイン電極と前記信号線との間に配置され、前記ドレイン電極の一部に接して設けられた第1誘電体層と、前記第1誘電体層に接する第2シールド層と、
前記第2シールド層と前記画素電極との間に配置され、前記固定電位が与えられる固定電位配線と、を備え、
前記第2シールド層は、前記固定電位配線に接続され、
前記ドレイン電極と前記第1誘電体層と前記第2シールド層とにより第1保持容量が構成されている、電気光学装置。 - 複数の画素ごとの画素電極及び薄膜トランジスターと、走査線と、信号線とが設けられた素子基板を備えた電気光学装置であって、
前記素子基板上において、
前記薄膜トランジスターのゲート電極と前記信号線との間に配置されたドレイン電極と、
前記ゲート電極と前記ドレイン電極との間に配置され、固定電位が与えられる第1シールド層と、
前記ドレイン電極と前記信号線との間に配置され、前記ドレイン電極の一部に接して設けられた第1誘電体層と、
前記ドレイン電極と前記第1誘電体層との間に配置された絶縁性の突起部と、
前記第1誘電体層に接する第2シールド層と、
前記第2シールド層と前記画素電極との間に配置され、前記固定電位が与えられる固定電位配線と、を備え、
前記第2シールド層は、前記素子基板の平面視で前記突起部と重なる部分において前記固定電位配線に接続され、
前記ドレイン電極と前記第1誘電体層と前記第2シールド層とにより第1保持容量が構成されている、電気光学装置。 - 前記走査線は、第1の方向に延在し、前記走査線の一部が前記ゲート電極であって、
前記第1シールド層は、前記基板の平面視で前記走査線と重なって前記第1の方向に延在している、請求項1または2に記載の電気光学装置。 - 前記信号線は、前記第1の方向と交差する第2の方向に延在し、
前記固定電位配線は、前記素子基板の平面視で前記信号線と重なって前記第2の方向に延在している、請求項3に記載の電気光学装置。 - 前記固定電位配線と前記画素電極との間の層間絶縁膜に設けられたトレンチ部と、
少なくとも前記トレンチ部を覆う第1容量電極と、前記第1容量電極に接する第2誘電体層と、前記第2誘電体層に接する第2容量電極とによりなる第2保持容量とを備え、
前記トレンチ部の底部において、前記第1容量電極と前記固定電位配線とが接続し、
前記ドレイン電極に対して、前記第2容量電極を介して前記画素電極が接続されている、請求項1乃至4のいずれか一項に記載の電気光学装置。 - 前記素子基板の複数の前記画素電極に対して液晶層を挟んで対向配置される共通電極を有する対向基板をさらに備え、
前記共通電極に与えられる電位と前記固定電位とが同電位である、請求項1乃至5のいずれか一項に記載の電気光学装置。 - 請求項1乃6のいずれか一項に記載の電気光学装置を備えた、電子機器。
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