JP2018037549A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 claims abstract description 10
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- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 11
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 43
- 229910052710 silicon Inorganic materials 0.000 description 43
- 239000010703 silicon Substances 0.000 description 43
- 229910052581 Si3N4 Inorganic materials 0.000 description 40
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 40
- 239000000523 sample Substances 0.000 description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000003486 chemical etching Methods 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
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- 239000000243 solution Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
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- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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Abstract
Description
形態に何ら限定されるものではなく、本発明の目的の範囲内において、適宜変更を加えて
実施することができる。
本実施形態に係る太陽電池は、金属電極、反射防止膜及び半導体基板を含み、受光面側に形成された前記金属電極の下部と前記基板との間には、前記反射防止膜の存在する部分および存在しない部分が混在して有しており、前記反射防止膜が存在しない部分の平均面積率は、前記金属電極下部の面積のうち、10%以上、80%以下である。
本実施形態に係る金属電極、反射防止膜及び半導体基板を含む太陽電池の製造方法は、前記半導体基板の上に反射防止膜を形成する工程と、前記金属電極の形成位置に対応する前記反射防止膜の領域にレーザー光を照射して、前記反射防止膜を部分的に除去する除去工程と、前記金属電極を形成する工程とを含む。
シリコン太陽電池セルを次のように作製した。シリコン基板の受光面側に、KOH溶液による異方性化学エッチングで高さが3〜5μmのピラミッド状のテクスチャを形成した。その上にPECVD法で厚さ80nmのSiN層(反射防止膜)を形成した。また、受光面の反対側に、AlペーストとAgペーストをスクリーン印刷し、大気中800℃において5秒の焼成を行って裏面電極を形成した。
実施例1で使用したシリコン太陽電池セルのサンプルと同様に、シリコン基板の受光面側には、KOH溶液による異方性化学エッチングで高さが3〜5μmのピラミッド状のテクスチャを形成した。その上にPECVD法で厚さ80nmのSiN層を形成した。また、受光面の反対側には、AlペーストとAgペーストをスクリーン印刷し、大気中800℃において5秒の焼成を行って裏面電極を形成した。
実施例1で使用したシリコン太陽電池セルのサンプルと同様に、シリコン基板の受光面に、KOH溶液による異方性化学エッチングで高さが3〜5μmのピラミッド状のテクスチャを形成した。その上にPECVD法で厚さ80nmのSiN層を形成した。また、受光面の反対側に、AlペーストとAgペーストをスクリーン印刷し、大気中800℃において5秒の焼成を行って裏面電極を形成した。
実施例1で使用したシリコン太陽電池セルのサンプルと同様に、シリコン基板の受光面に、KOH溶液による異方性化学エッチングで高さが3〜5μmのピラミッド状のテクスチャを形成した。その上にPECVD法で厚さ80nmのSiN層を形成した。また、受光面の反対側に、AlペーストとAgペーストをスクリーン印刷し、大気中800℃において5秒の焼成を行って裏面電極を形成した。
2 レーザー光の照射領域
3 ベンドコントアー
Claims (9)
- 金属電極、反射防止膜及び半導体基板を含む太陽電池であって、受光面側に形成された前記金属電極の下部と前記基板との間に、前記反射防止膜の存在する部分と存在しない部分とを混在して有しており、前記反射防止膜の存在しない部分の平均面積率は、前記金属電極の下部の面積に対して、10%以上、80%以下である、太陽電池。
- 前記反射防止膜の存在しない部分は、その表面の中心線平均粗さ(Ra)が1.5μm以下である、請求項1に記載の太陽電池。
- 前記金属電極の下部側に位置する半導体基板は、結晶質の構造を有する、請求項1または2に記載の太陽電池。
- 金属電極、反射防止膜及び半導体基板を含む太陽電池の製造方法であって、
前記半導体基板の上に反射防止膜を形成する工程と、前記金属電極の形成位置に対応する前記反射防止膜の領域にレーザー光を照射して、前記反射防止膜を部分的に除去する除去工程と、前記金属電極を形成する工程とを含み、
前記除去工程は、波長が380nm以上、500nm以下のレーザー光を照射する、太陽電池の製造方法。 - 前記レーザー光は、出力が5W以上、80W以下である、請求項4に記載の太陽電池の製造方法。
- 前記レーザー光は、バルス幅が1ピコ秒以上、50マイクロ秒以下のパルスレーザー光である、請求項4または5に記載の太陽電池の製造方法。
- 前記レーザー光は、出力密度が0.03mJ/cm2以上、20J/cm2以下のパルスレーザー光である、請求項4〜6のいずれかに記載の太陽電池の製造方法。
- 前記レーザー光は、パルスレーザー光及び連続発振レーザー光である、請求項4〜7のいずれかに記載の太陽電池の製造方法。
- 前記除去工程は、前記半導体基板を100℃以上、570℃以下に加熱する、請求項4〜8のいずれかに記載の太陽電池の製造方法。
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