JP2013254928A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
- Publication number
- JP2013254928A JP2013254928A JP2012266173A JP2012266173A JP2013254928A JP 2013254928 A JP2013254928 A JP 2013254928A JP 2012266173 A JP2012266173 A JP 2012266173A JP 2012266173 A JP2012266173 A JP 2012266173A JP 2013254928 A JP2013254928 A JP 2013254928A
- Authority
- JP
- Japan
- Prior art keywords
- openings
- electrode
- substrate
- solar cell
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 144
- 239000012535 impurity Substances 0.000 claims description 85
- 229910052709 silver Inorganic materials 0.000 claims description 37
- 239000004332 silver Substances 0.000 claims description 37
- 238000007747 plating Methods 0.000 claims description 36
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 230000005684 electric field Effects 0.000 description 34
- 238000007650 screen-printing Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910016909 AlxOy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】本発明に係る太陽電池は、基板(110)と、基板に位置し、高濃度ドーピング部と低濃度ドーピング部を含む選択的エミッタ部(121)と、選択的エミッタ部上に位置し、互いに離隔された複数の第1開口部(131)及び第1開口部の周りに位置する複数の第2開口部(132)を含む第1誘電層(130)と、第1開口部及び第2開口部を介して選択的エミッタ部と接続される第1電極(140)と、基板に位置し、基板に接続される第2電極を含み、第1開口部と第2開口部は互いに異なる平面形状で形成される。第1開口部の平面形状はライン形状に形成され、第2開口部の平面形状はドット形状に形成される。
【選択図】図2
Description
Claims (20)
- 基板と、
前記基板に位置し、高濃度ドーピング部と低濃度ドーピング部を含む選択的エミッタ部と、
前記選択的エミッタ部上に位置し、互いに離隔された複数の第1開口部及び前記第1開口部の周りに位置する複数の第2開口部を含む第1誘電層と、
前記複数の第1開口部及び前記複数の第2開口部を介して前記選択的エミッタ部と接続される第1電極と、
前記基板に位置し、 前記基板に接続される第2電極と、を含み、
前記複数の第1開口部と前記複数の第2開口部は互いに異なる平面形状に形成される太陽電池。 - 前記複数の第1開口部の平面形状はライン形状に形成され、前記複数の第2開口部の平面形状はドット形状に形成される、請求項1記載の太陽電池。
- 前記複数の第2開口部はそれぞれの第1開口部の両側面にそれぞれ位置する、請求項2記載の太陽電池。
- それぞれの第1開口部の線幅は8μm乃至12μmであり、それぞれの第1開口部の両側面にそれぞれ位置する複数の第2開口部の間の最大間隔は10μmないし25μmである、請求項3記載の太陽電池。
- 前記選択的エミッタ部の前記高濃度ドーピング部は前記複数の第1開口部と同様な平面形状に形成される、請求項1記載の太陽電池。
- 前記複数の第1開口部と前記複数の第2開口部の間に前記第1誘電層が位置する、請求項1記載の太陽電池。
- 前記第1電極は前記第1開口部及び前記第2開口部を介して露出した前記選択的エミッタ部の表面に位置するシード層、及び前記シード層上に位置する導電性金属層を含む、請求項1記載の太陽電池。
- 前記シード層はニッケルを含み、前記導電性金属層は銅(Cu)及びスズ(Sn)を含むか、銀(Ag)を含む、請求項7記載の太陽電池。
- 前記第1電極は前記基板の第1面に位置する複数の第1フィンガー電極と、前記基板の第1面に位置し前記複数の第1フィンガー電極と交差する方向に形成された複数の第1バスバー電極を含む、請求項1記載の太陽電池。
- 前記第1誘電層は少なくとも1つの第3開口部及び前記少なくとも1つの第3開口部の周りに位置する複数の第4開口部をさらに含み、 前記複数の第1バスバー電極は前記第3開口部及び前記第4開口部を介して前記選択的エミッタ部と接続される、請求項9記載の太陽電池。
- 1つの第1バスバー電極下部には少なくとも1つの第3開口部が位置する、請求項10記載の太陽電池。
- 1つの第1バスバー電極下部には少なくとも2つの第3開口部が位置する、請求項10記載の太陽電池。
- 前記基板の前記第1面において、前記第1開口部及び前記第3開口部が形成された領域を除去した残りの領域はテクスチャリング表面に形成される、請求項10記載の太陽電池。
- 前記第1開口部及び前記第3開口部が形成された領域の前記第1面は実質的に平坦な表面に形成される、請求項13記載の太陽電池。
- 前記少なくとも1つの第3開口部と前記複数の第4開口部の間に前記第1誘電層が位置する、請求項13記載の太陽電池。
- 前記第2電極は前記基板の第1面の反対側にある第2面で前記複数の第1バスバー電極と対応する位置に位置する複数の第2バスバー電極と、前記第2バスバー電極の間で前記基板の第2面に位置する表面電極を含み、前記表面電極は前記第2バスバー電極の間の前記第2面全体を覆う、請求項9記載の太陽電池。
- 前記第2電極は前記基板の第1面の反対側にある第2面で前記複数の第1バスバー電極と対応する位置に位置する複数の第2バスバー電極と、前記第2面に位置し前記第2バスバー電極と交差する方向に形成される複数の第2フィンガー電極を含む、請求項9記載の太陽電池。
- 第1導電型を有する半導体基板の第1面に前記第1導電型と異なる第2導電型を有する不純物部を形成する段階と、
前記不純物部上に誘電層を形成する段階と、
前記第2導電型を有する不純物膜を前記誘電層上に形成する段階と、
前記不純物膜にレーザビームを照射し、互いに離隔された複数の第1開口部及びそれぞれの第1開口部の周りに位置する複数の第2開口部を前記誘電層に形成し、前記複数の第1開口部を介して露出した前記不純物部に前記不純物膜の不純物を注入し前記不純物部に選択的エミッタ部を形成する段階と、
前記複数の第1開口部及び前記複数の第2開口部を介して露出した前記選択的エミッタ部にメッキ法を利用しシード層及び導電性金属層を形成する段階と、
を含む太陽電池の製造方法。 - 前記不純物部を形成する前に前記基板の第1面にテクスチャリング表面を形成する段階をさらに含む、請求項18記載の太陽電池の製造方法。
- 前記複数の第1開口部及び前記複数の第2開口部を形成する時、ガウス分布(Gaussian distribution)を有するレーザビームを使用する、請求項19記載の太陽電池の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0060445 | 2012-06-05 | ||
KR1020120060445A KR101358535B1 (ko) | 2012-06-05 | 2012-06-05 | 태양전지 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013254928A true JP2013254928A (ja) | 2013-12-19 |
JP6039388B2 JP6039388B2 (ja) | 2016-12-07 |
Family
ID=47257340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012266173A Active JP6039388B2 (ja) | 2012-06-05 | 2012-12-05 | 太陽電池及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9202948B2 (ja) |
EP (1) | EP2672519B1 (ja) |
JP (1) | JP6039388B2 (ja) |
KR (1) | KR101358535B1 (ja) |
CN (1) | CN103474482B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015159272A (ja) * | 2014-01-27 | 2015-09-03 | 三菱電機株式会社 | 太陽電池および太陽電池の製造方法 |
JP2018037549A (ja) * | 2016-08-31 | 2018-03-08 | 株式会社マテリアル・コンセプト | 太陽電池及びその製造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101358535B1 (ko) * | 2012-06-05 | 2014-02-13 | 엘지전자 주식회사 | 태양전지 및 그 제조 방법 |
KR101921738B1 (ko) * | 2012-06-26 | 2018-11-23 | 엘지전자 주식회사 | 태양 전지 |
CN103700730A (zh) * | 2013-12-31 | 2014-04-02 | 秦广飞 | 一种太阳能扩散选择性发射极的制备方法 |
TWI603493B (zh) * | 2014-01-29 | 2017-10-21 | 茂迪股份有限公司 | 太陽能電池及其模組 |
KR20150117034A (ko) * | 2014-04-09 | 2015-10-19 | 현대중공업 주식회사 | 고효율 perl 태양전지의 제조방법 및 그 태양전지 |
WO2016018082A1 (ko) * | 2014-07-29 | 2016-02-04 | 주식회사 케이피이 | 수직 다층 에미터 구조를 갖는 태양전지 및 그 태양전지의 제조방법 |
CN109411565B (zh) * | 2018-09-29 | 2021-02-26 | 阜宁阿特斯阳光电力科技有限公司 | 太阳能电池片及其制备方法、光伏组件 |
CN109904067A (zh) * | 2019-01-21 | 2019-06-18 | 东方环晟光伏(江苏)有限公司 | 一种perc双面电池制作工艺 |
CN110148525A (zh) * | 2019-04-19 | 2019-08-20 | 复旦大学 | 一种基于富氢氧化硅固态电解质的超级电容及其制备方法 |
CN116666460A (zh) * | 2022-04-27 | 2023-08-29 | 浙江晶科能源有限公司 | 太阳能电池及制备方法、光伏组件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04504033A (ja) * | 1989-12-06 | 1992-07-16 | エイエスイー・アメリカス・インコーポレーテッド | 点接続型太陽電池素子およびその製造方法 |
US20120060917A1 (en) * | 2011-02-09 | 2012-03-15 | Yoonsil Jin | Solar cell |
EP2672519B1 (en) * | 2012-06-05 | 2015-05-27 | Lg Electronics Inc. | Solar cell |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19915666A1 (de) | 1999-04-07 | 2000-10-19 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zur selektiven Kontaktierung von Solarzellen |
EP1958242A4 (en) * | 2005-11-24 | 2010-02-24 | Newsouth Innovations Pty Ltd | PREPARATION OF SOLAR CELLS WITH HIGH EFFICIENCY |
US20090142875A1 (en) | 2007-11-30 | 2009-06-04 | Applied Materials, Inc. | Method of making an improved selective emitter for silicon solar cells |
US7820540B2 (en) | 2007-12-21 | 2010-10-26 | Palo Alto Research Center Incorporated | Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells |
US7833808B2 (en) | 2008-03-24 | 2010-11-16 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
US20100089447A1 (en) * | 2008-10-09 | 2010-04-15 | Solopower, Inc. | Conductive grids for solar cells |
DE102008056456A1 (de) * | 2008-11-07 | 2010-06-17 | Centrotherm Photovoltaics Technology Gmbh | Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung |
KR101057124B1 (ko) * | 2009-11-03 | 2011-08-16 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
KR101038967B1 (ko) | 2009-12-21 | 2011-06-07 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
KR20110124532A (ko) * | 2010-05-11 | 2011-11-17 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
KR101661768B1 (ko) * | 2010-09-03 | 2016-09-30 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
CN102142479A (zh) | 2010-12-18 | 2011-08-03 | 广东爱康太阳能科技有限公司 | 一种选择性发射极及氮化硅薄膜开槽同步实现工艺 |
KR101101621B1 (ko) * | 2010-12-31 | 2012-01-02 | 현대중공업 주식회사 | 전후면전계 태양전지 및 그 제조방법 |
-
2012
- 2012-06-05 KR KR1020120060445A patent/KR101358535B1/ko active IP Right Grant
- 2012-11-07 US US13/671,262 patent/US9202948B2/en active Active
- 2012-11-08 EP EP12007593.2A patent/EP2672519B1/en active Active
- 2012-12-05 JP JP2012266173A patent/JP6039388B2/ja active Active
-
2013
- 2013-01-16 CN CN201310014821.6A patent/CN103474482B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04504033A (ja) * | 1989-12-06 | 1992-07-16 | エイエスイー・アメリカス・インコーポレーテッド | 点接続型太陽電池素子およびその製造方法 |
US20120060917A1 (en) * | 2011-02-09 | 2012-03-15 | Yoonsil Jin | Solar cell |
EP2672519B1 (en) * | 2012-06-05 | 2015-05-27 | Lg Electronics Inc. | Solar cell |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015159272A (ja) * | 2014-01-27 | 2015-09-03 | 三菱電機株式会社 | 太陽電池および太陽電池の製造方法 |
JP2018037549A (ja) * | 2016-08-31 | 2018-03-08 | 株式会社マテリアル・コンセプト | 太陽電池及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20130136772A (ko) | 2013-12-13 |
CN103474482A (zh) | 2013-12-25 |
JP6039388B2 (ja) | 2016-12-07 |
EP2672519B1 (en) | 2015-05-27 |
US20130319517A1 (en) | 2013-12-05 |
EP2672519A1 (en) | 2013-12-11 |
KR101358535B1 (ko) | 2014-02-13 |
CN103474482B (zh) | 2016-09-07 |
US9202948B2 (en) | 2015-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6039388B2 (ja) | 太陽電池及びその製造方法 | |
US10483409B2 (en) | Solar cell and method for manufacturing the same | |
USRE46515E1 (en) | Solar cell | |
JP5735474B2 (ja) | 太陽電池及びその製造方法 | |
US9368655B2 (en) | Solar cell and method for manufacturing the same | |
US20100229925A1 (en) | Solar cell and method for manufacturing the same, and method for forming impurity region | |
JP5628952B2 (ja) | 太陽電池 | |
KR101699309B1 (ko) | 태양 전지의 제조 방법 | |
KR101729311B1 (ko) | 태양 전지 및 그 제조 방법 | |
KR101743716B1 (ko) | 태양 전지 및 그 제조 방법 | |
KR101239793B1 (ko) | 태양 전지 및 그 제조 방법 | |
KR20120082664A (ko) | 태양 전지의 제조 방법 | |
KR101642153B1 (ko) | 태양 전지 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150826 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160607 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160902 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161004 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161104 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6039388 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |