CN103474482A - 太阳能电池及其制造方法 - Google Patents
太阳能电池及其制造方法 Download PDFInfo
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- CN103474482A CN103474482A CN2013100148216A CN201310014821A CN103474482A CN 103474482 A CN103474482 A CN 103474482A CN 2013100148216 A CN2013100148216 A CN 2013100148216A CN 201310014821 A CN201310014821 A CN 201310014821A CN 103474482 A CN103474482 A CN 103474482A
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- 239000013078 crystal Substances 0.000 claims description 17
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 6
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- 230000003667 anti-reflective effect Effects 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- 239000003574 free electron Substances 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
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- 238000012423 maintenance Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- HKSGQTYSSZOJOA-UHFFFAOYSA-N potassium argentocyanide Chemical compound [K+].[Ag+].N#[C-].N#[C-] HKSGQTYSSZOJOA-UHFFFAOYSA-N 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2012-0060445 | 2012-06-05 | ||
KR1020120060445A KR101358535B1 (ko) | 2012-06-05 | 2012-06-05 | 태양전지 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103474482A true CN103474482A (zh) | 2013-12-25 |
CN103474482B CN103474482B (zh) | 2016-09-07 |
Family
ID=47257340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310014821.6A Active CN103474482B (zh) | 2012-06-05 | 2013-01-16 | 太阳能电池及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9202948B2 (zh) |
EP (1) | EP2672519B1 (zh) |
JP (1) | JP6039388B2 (zh) |
KR (1) | KR101358535B1 (zh) |
CN (1) | CN103474482B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810412B (zh) * | 2014-01-29 | 2017-06-09 | 茂迪股份有限公司 | 太阳能电池及其模组 |
CN109904067A (zh) * | 2019-01-21 | 2019-06-18 | 东方环晟光伏(江苏)有限公司 | 一种perc双面电池制作工艺 |
CN110148525A (zh) * | 2019-04-19 | 2019-08-20 | 复旦大学 | 一种基于富氢氧化硅固态电解质的超级电容及其制备方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101358535B1 (ko) * | 2012-06-05 | 2014-02-13 | 엘지전자 주식회사 | 태양전지 및 그 제조 방법 |
KR101921738B1 (ko) * | 2012-06-26 | 2018-11-23 | 엘지전자 주식회사 | 태양 전지 |
CN103700730A (zh) * | 2013-12-31 | 2014-04-02 | 秦广飞 | 一种太阳能扩散选择性发射极的制备方法 |
JP6300712B2 (ja) * | 2014-01-27 | 2018-03-28 | 三菱電機株式会社 | 太陽電池および太陽電池の製造方法 |
KR20150117034A (ko) * | 2014-04-09 | 2015-10-19 | 현대중공업 주식회사 | 고효율 perl 태양전지의 제조방법 및 그 태양전지 |
WO2016018082A1 (ko) * | 2014-07-29 | 2016-02-04 | 주식회사 케이피이 | 수직 다층 에미터 구조를 갖는 태양전지 및 그 태양전지의 제조방법 |
JP7064823B2 (ja) * | 2016-08-31 | 2022-05-11 | 株式会社マテリアル・コンセプト | 太陽電池及びその製造方法 |
CN109411565B (zh) * | 2018-09-29 | 2021-02-26 | 阜宁阿特斯阳光电力科技有限公司 | 太阳能电池片及其制备方法、光伏组件 |
CN116666460A (zh) * | 2022-04-27 | 2023-08-29 | 浙江晶科能源有限公司 | 太阳能电池及制备方法、光伏组件 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100319770A1 (en) * | 2001-11-03 | 2010-12-23 | Lee Jinhyung | Solar cell and method for manufacturing the same |
US20110146765A1 (en) * | 2009-12-21 | 2011-06-23 | Junyong Ahn | Solar cell and method for manufacturing the same |
CN102142479A (zh) * | 2010-12-18 | 2011-08-03 | 广东爱康太阳能科技有限公司 | 一种选择性发射极及氮化硅薄膜开槽同步实现工艺 |
US20110214727A1 (en) * | 2008-11-07 | 2011-09-08 | Centrotherm Photovoltaics Ag | Method for manufacturing a solar cell with a two-stage doping |
US20120060917A1 (en) * | 2011-02-09 | 2012-03-15 | Yoonsil Jin | Solar cell |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5011565A (en) * | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Dotted contact solar cell and method of making same |
DE19915666A1 (de) | 1999-04-07 | 2000-10-19 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zur selektiven Kontaktierung von Solarzellen |
EP1958242A4 (en) * | 2005-11-24 | 2010-02-24 | Newsouth Innovations Pty Ltd | PREPARATION OF SOLAR CELLS WITH HIGH EFFICIENCY |
US20090142875A1 (en) | 2007-11-30 | 2009-06-04 | Applied Materials, Inc. | Method of making an improved selective emitter for silicon solar cells |
US7820540B2 (en) | 2007-12-21 | 2010-10-26 | Palo Alto Research Center Incorporated | Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells |
US7833808B2 (en) | 2008-03-24 | 2010-11-16 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
US20100089447A1 (en) * | 2008-10-09 | 2010-04-15 | Solopower, Inc. | Conductive grids for solar cells |
KR20110124532A (ko) * | 2010-05-11 | 2011-11-17 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
KR101661768B1 (ko) * | 2010-09-03 | 2016-09-30 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
KR101101621B1 (ko) * | 2010-12-31 | 2012-01-02 | 현대중공업 주식회사 | 전후면전계 태양전지 및 그 제조방법 |
KR101358535B1 (ko) * | 2012-06-05 | 2014-02-13 | 엘지전자 주식회사 | 태양전지 및 그 제조 방법 |
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2012
- 2012-06-05 KR KR1020120060445A patent/KR101358535B1/ko active IP Right Grant
- 2012-11-07 US US13/671,262 patent/US9202948B2/en active Active
- 2012-11-08 EP EP12007593.2A patent/EP2672519B1/en active Active
- 2012-12-05 JP JP2012266173A patent/JP6039388B2/ja active Active
-
2013
- 2013-01-16 CN CN201310014821.6A patent/CN103474482B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100319770A1 (en) * | 2001-11-03 | 2010-12-23 | Lee Jinhyung | Solar cell and method for manufacturing the same |
US20110214727A1 (en) * | 2008-11-07 | 2011-09-08 | Centrotherm Photovoltaics Ag | Method for manufacturing a solar cell with a two-stage doping |
US20110146765A1 (en) * | 2009-12-21 | 2011-06-23 | Junyong Ahn | Solar cell and method for manufacturing the same |
CN102142479A (zh) * | 2010-12-18 | 2011-08-03 | 广东爱康太阳能科技有限公司 | 一种选择性发射极及氮化硅薄膜开槽同步实现工艺 |
US20120060917A1 (en) * | 2011-02-09 | 2012-03-15 | Yoonsil Jin | Solar cell |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810412B (zh) * | 2014-01-29 | 2017-06-09 | 茂迪股份有限公司 | 太阳能电池及其模组 |
CN109904067A (zh) * | 2019-01-21 | 2019-06-18 | 东方环晟光伏(江苏)有限公司 | 一种perc双面电池制作工艺 |
CN110148525A (zh) * | 2019-04-19 | 2019-08-20 | 复旦大学 | 一种基于富氢氧化硅固态电解质的超级电容及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103474482B (zh) | 2016-09-07 |
EP2672519B1 (en) | 2015-05-27 |
US9202948B2 (en) | 2015-12-01 |
US20130319517A1 (en) | 2013-12-05 |
JP6039388B2 (ja) | 2016-12-07 |
JP2013254928A (ja) | 2013-12-19 |
KR101358535B1 (ko) | 2014-02-13 |
KR20130136772A (ko) | 2013-12-13 |
EP2672519A1 (en) | 2013-12-11 |
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