JP2018010917A5 - - Google Patents

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Publication number
JP2018010917A5
JP2018010917A5 JP2016137453A JP2016137453A JP2018010917A5 JP 2018010917 A5 JP2018010917 A5 JP 2018010917A5 JP 2016137453 A JP2016137453 A JP 2016137453A JP 2016137453 A JP2016137453 A JP 2016137453A JP 2018010917 A5 JP2018010917 A5 JP 2018010917A5
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JP
Japan
Prior art keywords
quantum dot
ligand
quantum
quantum dots
dot portion
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JP2016137453A
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English (en)
Japanese (ja)
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JP2018010917A (ja
JP6729931B2 (ja
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Priority to JP2016137453A priority Critical patent/JP6729931B2/ja
Priority claimed from JP2016137453A external-priority patent/JP6729931B2/ja
Priority to PCT/JP2017/000041 priority patent/WO2018012009A1/ja
Publication of JP2018010917A publication Critical patent/JP2018010917A/ja
Priority to US16/244,166 priority patent/US10957838B2/en
Publication of JP2018010917A5 publication Critical patent/JP2018010917A5/ja
Application granted granted Critical
Publication of JP6729931B2 publication Critical patent/JP6729931B2/ja
Expired - Fee Related legal-status Critical Current
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JP2016137453A 2016-07-12 2016-07-12 熱電素子材料とその製造方法 Expired - Fee Related JP6729931B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016137453A JP6729931B2 (ja) 2016-07-12 2016-07-12 熱電素子材料とその製造方法
PCT/JP2017/000041 WO2018012009A1 (ja) 2016-07-12 2017-01-04 熱電素子材料とその製造方法
US16/244,166 US10957838B2 (en) 2016-07-12 2019-01-10 Thermoelectric element material and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016137453A JP6729931B2 (ja) 2016-07-12 2016-07-12 熱電素子材料とその製造方法

Publications (3)

Publication Number Publication Date
JP2018010917A JP2018010917A (ja) 2018-01-18
JP2018010917A5 true JP2018010917A5 (enExample) 2019-07-18
JP6729931B2 JP6729931B2 (ja) 2020-07-29

Family

ID=60952402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016137453A Expired - Fee Related JP6729931B2 (ja) 2016-07-12 2016-07-12 熱電素子材料とその製造方法

Country Status (3)

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US (1) US10957838B2 (enExample)
JP (1) JP6729931B2 (enExample)
WO (1) WO2018012009A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11702590B2 (en) * 2018-04-25 2023-07-18 Nichia Corporation Light-emitting material and light-emitting device
CN115274996A (zh) * 2021-04-30 2022-11-01 香港科技大学 热电堆热通量传感器装置、阵列和可穿戴电子设备
JP2023072395A (ja) * 2021-11-12 2023-05-24 国立研究開発法人産業技術総合研究所 自立型半導体素子およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008106732A1 (en) * 2007-03-05 2008-09-12 Commonwealth Scientifc And Industrial Research Organisation Thermoelectric material
JP2015056491A (ja) * 2013-09-11 2015-03-23 トヨタ自動車株式会社 ナノコンポジット熱電変換材料及びその製造方法
JP6275441B2 (ja) * 2013-09-30 2018-02-07 富士フイルム株式会社 半導体膜、酸化物微粒子分散液、半導体膜の製造方法、及び、薄膜トランジスタ

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