JP6729931B2 - 熱電素子材料とその製造方法 - Google Patents

熱電素子材料とその製造方法 Download PDF

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JP6729931B2
JP6729931B2 JP2016137453A JP2016137453A JP6729931B2 JP 6729931 B2 JP6729931 B2 JP 6729931B2 JP 2016137453 A JP2016137453 A JP 2016137453A JP 2016137453 A JP2016137453 A JP 2016137453A JP 6729931 B2 JP6729931 B2 JP 6729931B2
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quantum dot
ligand
thermoelectric element
quantum
liquid
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JP2016137453A
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JP2018010917A (ja
JP2018010917A5 (enExample
Inventor
義宏 岩佐
義宏 岩佐
サトリア ズルカルナエン ビスリ
サトリア ズルカルナエン ビスリ
清水　直
直 清水
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RIKEN
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RIKEN
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Priority to PCT/JP2017/000041 priority patent/WO2018012009A1/ja
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Priority to US16/244,166 priority patent/US10957838B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
JP2016137453A 2016-07-12 2016-07-12 熱電素子材料とその製造方法 Expired - Fee Related JP6729931B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016137453A JP6729931B2 (ja) 2016-07-12 2016-07-12 熱電素子材料とその製造方法
PCT/JP2017/000041 WO2018012009A1 (ja) 2016-07-12 2017-01-04 熱電素子材料とその製造方法
US16/244,166 US10957838B2 (en) 2016-07-12 2019-01-10 Thermoelectric element material and method for manufacturing the same

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JP2016137453A JP6729931B2 (ja) 2016-07-12 2016-07-12 熱電素子材料とその製造方法

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JP2018010917A JP2018010917A (ja) 2018-01-18
JP2018010917A5 JP2018010917A5 (enExample) 2019-07-18
JP6729931B2 true JP6729931B2 (ja) 2020-07-29

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JP (1) JP6729931B2 (enExample)
WO (1) WO2018012009A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11702590B2 (en) * 2018-04-25 2023-07-18 Nichia Corporation Light-emitting material and light-emitting device
CN115274996A (zh) * 2021-04-30 2022-11-01 香港科技大学 热电堆热通量传感器装置、阵列和可穿戴电子设备
JP2023072395A (ja) * 2021-11-12 2023-05-24 国立研究開発法人産業技術総合研究所 自立型半導体素子およびその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008106732A1 (en) * 2007-03-05 2008-09-12 Commonwealth Scientifc And Industrial Research Organisation Thermoelectric material
JP2015056491A (ja) * 2013-09-11 2015-03-23 トヨタ自動車株式会社 ナノコンポジット熱電変換材料及びその製造方法
JP6275441B2 (ja) * 2013-09-30 2018-02-07 富士フイルム株式会社 半導体膜、酸化物微粒子分散液、半導体膜の製造方法、及び、薄膜トランジスタ

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WO2018012009A1 (ja) 2018-01-18
US10957838B2 (en) 2021-03-23
JP2018010917A (ja) 2018-01-18
US20190148614A1 (en) 2019-05-16

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