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Self-structured conductive filament nanoheater for chalcogenide phase transition
Snippet
Ge2Sb2Te5-based phase-change memories (PCMs), which undergo fast and reversible switching between amorphous and crystalline structural transformation, are being utilized for nonvolatile data storage. However, a critical obstacle is the high programming current of the …
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H01L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
H01L45/00
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
H01L45/04
Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
G11C13/00
Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
G11C13/0002
Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements
H01L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
H01L45/00
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
H01L45/04
Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
G11C13/00
Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
G11C13/0002
Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements
H01L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
H01L45/00
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
H01L45/04
Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
H01L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
H01L45/00
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
H01L45/04
Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
G11C13/00
Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
G11C13/0002
Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements
G11C13/0004
Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements comprising amorphous/crystalline phase transition cells
G11C13/00
Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
G11C13/0002
Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements
G11C13/0009
RRAM elements whose operation depends upon chemical change
H01L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
H01L45/00
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
H01L45/04
Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
H01L45/06
Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect