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Self-structured conductive filament nanoheater for chalcogenide phase transition

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Ge2Sb2Te5-based phase-change memories (PCMs), which undergo fast and reversible switching between amorphous and crystalline structural transformation, are being utilized for nonvolatile data storage. However, a critical obstacle is the high programming current of the …

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H01L45/1233 Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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You et al., 2015

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Author
You B
Byun M
Kim S
Lee K

Publication year
2015
Publication venue
ACS nano