JP2017536691A - 一体型スーパーキャパシタ - Google Patents
一体型スーパーキャパシタ Download PDFInfo
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- 239000003990 capacitor Substances 0.000 title description 5
- 239000003792 electrolyte Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims description 43
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 238000004146 energy storage Methods 0.000 claims description 10
- 229910021389 graphene Inorganic materials 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 2
- 238000001764 infiltration Methods 0.000 claims description 2
- 230000008595 infiltration Effects 0.000 claims description 2
- 239000011244 liquid electrolyte Substances 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- -1 sodium chloride Chemical class 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000004966 Carbon aerogel Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002001 electrolyte material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
- H01G11/28—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/08—Structural combinations, e.g. assembly or connection, of hybrid or EDL capacitors with other electric components, at least one hybrid or EDL capacitor being the main component
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- H—ELECTRICITY
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- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/66—Current collectors
- H01G11/68—Current collectors characterised by their material
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/66—Current collectors
- H01G11/70—Current collectors characterised by their structure
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- H—ELECTRICITY
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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- H01G11/78—Cases; Housings; Encapsulations; Mountings
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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- H01G11/78—Cases; Housings; Encapsulations; Mountings
- H01G11/82—Fixing or assembling a capacitive element in a housing, e.g. mounting electrodes, current collectors or terminals in containers or encapsulations
-
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- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
- H01M10/4257—Smart batteries, e.g. electronic circuits inside the housing of the cells or batteries
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- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
- H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
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- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
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- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
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- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- General Chemical & Material Sciences (AREA)
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- Electric Double-Layer Capacitors Or The Like (AREA)
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Abstract
Description
C=ε*(A/D)(式1)、
式中、
Cは容量であり、
εは定数であり、
Aは面積であり、
Dは距離である。
Claims (20)
- 基板と、
前記基板内に一体化された少なくとも2つの多孔性電極と、
前記少なくとも2つの多孔性電極の間に拡がる電解質であって、前記基板と一体化され、かつ前記基板内に存在する、電解質と、を備え
前記少なくとも2つの多孔性電極および電解質はスーパーキャパシタとして電荷を蓄積するように構成されている、スーパーキャパシタ。 - 前記基板は3方向において最大の寸法を有し、前記少なくとも2つの電極は前記基板の前記最大の寸法内に完全に配置される、請求項1に記載のスーパーキャパシタ。
- 前記少なくとも2つの多孔性電極を覆う電流コレクタをさらに備える、請求項1に記載のスーパーキャパシタ。
- 前記少なくとも2つの多孔性電極は、互いに離間しかつほぼ並行である、請求項1に記載のスーパーキャパシタ。
- 前記基板は、シリコンを含む、請求項1に記載のスーパーキャパシタ。
- 前記少なくとも2つの多孔性電極および電解質は、前記基板内に非直線の経路を形成する、請求項1に記載のスーパーキャパシタ。
- 前記少なくとも2つの多孔性電極および電解質は、前記基板内に曲がりくねった経路を形成する、請求項6に記載のスーパーキャパシタ。
- 前記基板の上および/または中に形成されたMEMS構造を備え、前記MEMS構造は前記少なくとも2つの多孔性電極に電気的に接続され、前記少なくとも2つの多孔性電極および電解質は前記MEMS構造から離間している、請求項1に記載のスーパーキャパシタ。
- 前記少なくとも2つの多孔性電極は、グラフェンを含む、請求項1に記載のスーパーキャパシタ。
- 前記基板の上および/または中に形成された能動回路をさらに備え、前記能動回路は前記少なくとも2つの多孔性電極と電気的に接続されている、請求項1に記載のスーパーキャパシタ。
- 基板と、
前記基板内に一体化された少なくとも2つの電極と、
前記少なくとも2つの電極の間に拡がる電解質であって、前記基板と一体化され、かつ前記基板内に存在する、電解質と、を備え
前記少なくとも2つの電極および電解質は、電荷を蓄積するように構成されている、エネルギー蓄積デバイス。 - 前記少なくとも2つの電極および電解質は、バッテリとして電荷を蓄積するように構成されている、請求項11に記載のエネルギー蓄積デバイス。
- 前記基板は、シリコンを含む、請求項11に記載のエネルギー蓄積デバイス。
- 前記少なくとも2つの電極および電解質は、前記基板内に非直線の経路を形成する、請求項11に記載のエネルギー蓄積デバイス。
- 前記電極のうちの1つと前記電解質との間に分離器をさらに備える、請求項11に記載のエネルギー蓄積デバイス。
- 前記基板の上および/または中にMEMSデバイスおよび能動回路の一方または両方をさらに備える、請求項11に記載のエネルギー蓄積デバイス。
- スーパーキャパシタを形成する方法であって、
当初の外面を有する基板を提供することと、
前記基板内に少なくとも2つの多孔性電極であって、前記基板の前記当初の外面を実質的に超えて拡がらないように形成される、少なくとも2つの多孔性電極を形成することと、
電解質を収容する電解質領域であって、前記少なくとも2つの電極の間に存在する、電解質領域を形成することと、
前記電解質領域に電解質であって、前記基板の前記当初の外面を実質的に超えて拡がらないように形成される、電解質を加えることと、
少なくとも2つの電流コレクタを形成することであって、各電極が前記電流コレクタの1つと電気的に導通する、形成することと、を含む、方法。 - 電解質領域を形成することは、
前記少なくとも2つの電極の間に複数の壁を形成することと、
前記壁を酸化することと、
前記酸化された壁を除去して、前記少なくとも2つの電極の間に開口した空洞を形成することと、を含む、請求項17に記載の方法。 - 2つの多孔性電極を形成することは、前記基板内に第1の井戸および第2の井戸を形成することを含み、前記第1および第2の井戸が互いに離間しかつほぼ並行であり、前記第1および第2の井戸が非直線である、請求項17に記載の方法。
- 電解質を加えることは、
前記電解質領域に液体状の電解質を加えることと、
前記液体状の電解質に真空浸透を適用することと、を含む、請求項17に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/509,950 | 2014-10-08 | ||
US14/509,950 US10468201B2 (en) | 2014-10-08 | 2014-10-08 | Integrated super-capacitor |
PCT/US2015/050102 WO2016060769A2 (en) | 2014-10-08 | 2015-09-15 | Integrated super-capacitor |
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Publication Number | Publication Date |
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JP2017536691A true JP2017536691A (ja) | 2017-12-07 |
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JP2017518984A Pending JP2017536691A (ja) | 2014-10-08 | 2015-09-15 | 一体型スーパーキャパシタ |
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US (1) | US10468201B2 (ja) |
JP (1) | JP2017536691A (ja) |
CN (1) | CN106796845B (ja) |
DE (1) | DE112015004645T5 (ja) |
WO (1) | WO2016060769A2 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US10102981B2 (en) | 2014-08-26 | 2018-10-16 | Analog Devices, Inc. | Method of producing a super-capacitor |
US9601278B2 (en) * | 2014-08-26 | 2017-03-21 | Analog Devices, Inc. | Super-capacitor with separator and method of producing the same |
US10050320B2 (en) | 2015-01-09 | 2018-08-14 | Analog Devices, Inc. | Integrated circuit with shared electrode energy storage devices |
EP3190421B1 (en) | 2016-01-07 | 2019-05-22 | Analog Devices, Inc. | Two- or three-axis angular accelerometer |
US10732198B2 (en) | 2017-08-09 | 2020-08-04 | Analog Devices, Inc. | Integrated linear and angular MEMS accelerometers |
US10505162B2 (en) | 2017-10-05 | 2019-12-10 | Analog Devices, Inc. | Battery housing |
US11764392B2 (en) | 2018-03-01 | 2023-09-19 | Analog Devices, Inc. | Battery assembly and method of manufacturing the same |
CN113884224B (zh) * | 2021-09-23 | 2024-06-18 | 昆明理工大学 | 一种柔性电容式压力传感器 |
Citations (7)
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US10468201B2 (en) | 2019-11-05 |
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WO2016060769A2 (en) | 2016-04-21 |
DE112015004645T5 (de) | 2017-06-29 |
CN106796845A (zh) | 2017-05-31 |
WO2016060769A3 (en) | 2016-06-16 |
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