JP2017534181A - 薄膜太陽電池のための層構造及びその製造方法 - Google Patents
薄膜太陽電池のための層構造及びその製造方法 Download PDFInfo
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- JP2017534181A JP2017534181A JP2017525794A JP2017525794A JP2017534181A JP 2017534181 A JP2017534181 A JP 2017534181A JP 2017525794 A JP2017525794 A JP 2017525794A JP 2017525794 A JP2017525794 A JP 2017525794A JP 2017534181 A JP2017534181 A JP 2017534181A
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- layer
- light
- alkali metal
- oxidation
- absorbing layer
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- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 230000003647 oxidation Effects 0.000 claims abstract description 46
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 46
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 45
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 43
- 230000031700 light absorption Effects 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000005260 corrosion Methods 0.000 claims abstract description 18
- 230000007797 corrosion Effects 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 19
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 229910052792 caesium Inorganic materials 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 229910052701 rubidium Inorganic materials 0.000 claims description 5
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 2
- 230000002745 absorbent Effects 0.000 claims 1
- 239000002250 absorbent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 191
- 239000000463 material Substances 0.000 description 38
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 30
- 239000011787 zinc oxide Substances 0.000 description 18
- 239000011669 selenium Substances 0.000 description 14
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 9
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 7
- 229910052951 chalcopyrite Inorganic materials 0.000 description 7
- 238000011161 development Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 150000001339 alkali metal compounds Chemical class 0.000 description 4
- -1 alkali metal oxides Chemical class 0.000 description 4
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 4
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- JAAGVIUFBAHDMA-UHFFFAOYSA-M rubidium bromide Chemical compound [Br-].[Rb+] JAAGVIUFBAHDMA-UHFFFAOYSA-M 0.000 description 4
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- 229910003363 ZnMgO Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910000288 alkali metal carbonate Inorganic materials 0.000 description 2
- 150000008041 alkali metal carbonates Chemical class 0.000 description 2
- 229910001508 alkali metal halide Inorganic materials 0.000 description 2
- 150000008045 alkali metal halides Chemical class 0.000 description 2
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 150000002927 oxygen compounds Chemical class 0.000 description 2
- WFUBYPSJBBQSOU-UHFFFAOYSA-M rubidium iodide Inorganic materials [Rb+].[I-] WFUBYPSJBBQSOU-UHFFFAOYSA-M 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910018507 Al—Ni Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical class S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
- YOXKVLXOLWOQBK-UHFFFAOYSA-N sulfur monoxide zinc Chemical compound [Zn].S=O YOXKVLXOLWOQBK-UHFFFAOYSA-N 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
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- H01L31/0327—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4 characterised by the doping material
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Abstract
Description
Claims (15)
- 少なくとも、光吸収層(5)の表面(6)に隣接する領域において、少なくとも一つのアルカリ金属によってドープされた、光吸収層と
前記光吸収層(5)の前記表面(6)上の酸化不動態層(8)と
を含む、薄膜太陽電池のための層構造であって、
前記酸化不動態層は、前記光吸収層を腐食から保護するよう設計されている、層構造。 - 前記表面(6)上の前記酸化不動態層(8)が前記光吸収層(5)に組み込まれ、前記光吸収層の前記表面が変換された、請求項1に記載の層構造。
- 前記光吸収層(5)は、式中0≦x,y≦1であるCu(In1−xGax)(Se1−ySy)2、及び/又は式中0≦x≦1であるCu2ZnSn(Se1−xSx)4を含む、請求項1又は2に記載の層構造。
- 前記光吸収層(5)の前記表面(6)に隣接する前記領域が、p−n逆転(9)を示すようにドープされた、請求項1〜3のいずれか一項に記載の層構造。
- 前記少なくとも一つのアルカリ金属がルビジウム及び/又はセシウムである、請求項1〜4のいずれか一項に記載の層構造。
- 前記酸化不動態層(8)が、(In,Ga)2O3、式中M=K、Rb、Cs、かつ0<x,y,zであるMx(In,Ga)yOz、及び/又はAl2O3、及び/又はZnO、式中x=1〜2であるSnOxを含む、請求項1〜5のいずれか一項に記載の層構造。
- 前記酸化不動態層(8)の厚み(D)が1nm〜50nmである、請求項1〜6のいずれか一項に記載の層構造。
- 前記酸化不動態層(8)が、適用された緩衝層(10)を有する、請求項1〜7のいずれか一項に記載の層構造。
- 請求項1〜8のいずれか一項に記載の薄膜太陽電池のための層構造を製造する方法であって、前記方法は:
a.少なくとも、光吸収層(5)の表面(6)に隣接する領域に、少なくとも一つのアルカリ金属によってドープされた光吸収層を基材上に生成することと、
b.前記光吸収層の前記表面上に酸化不動態層(8)を生成することであって、前記酸化不動態層は、前記光吸収層を腐食から保護するよう設計されている、ことと
を含む、方法。 - 工程bは、前記光吸収層(5)の前記表面(6)が変換されるように、前記光吸収層に組み込まれた前記表面上の前記酸化不動態層(8)を含む、請求項9に記載の方法。
- 工程aが、以下のサブステップ:
ax.前記光吸収層(5)を生成することと
az.少なくとも、前記光吸収層の前記表面(6)に隣接する領域において、少なくとも一つのアルカリ金属で前記光吸収層をドープすることと
を含む、請求項9又は10に記載の方法。 - 前記光吸収層(5)の前記表面(6)に少なくとも一つのアルカリ金属を適用する工程であって、好ましくはSe雰囲気及び/又はS雰囲気下で、少なくとも一つのアルカリ金属を、少なくとも、前記光吸収層の前記表面に隣接する領域の内部へと内向きに拡散させることを含む工程azによって特徴付けられる、請求項11に記載の方法。
- 工程bが、アルカリ金属のドーピングを有する光吸収層(5)を、酸素を含む雰囲気中で、室温に対して高い温度でアニーリングすることを含み、前記酸化不動態層(8)は、好ましくは前記光吸収層及び酸素から生成される、請求項9〜12のいずれか一項に記載の方法。
- 工程bは、アルカリ金属のドーピングを有する前記光吸収層(5)の前記表面(6)に酸化物を適用することを含む、請求項9〜13のいずれか一項に記載の方法。
- 前記緩衝層(10)を前記酸化不動態層(8)に適用する工程によって特徴付けられる、請求項9〜14のいずれか一項に記載の方法。
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KR20210050564A (ko) * | 2018-09-22 | 2021-05-07 | (씨엔비엠) 벵부 디자인 앤드 리서치 인스티튜트 포 글래스 인더스트리 컴퍼니 리미티드 | 흡수체층의 후처리 방법 |
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