JP2017531210A - 誘電性シロキサン粒子フィルム及びそれを有するデバイス - Google Patents
誘電性シロキサン粒子フィルム及びそれを有するデバイス Download PDFInfo
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- JP2017531210A JP2017531210A JP2017518608A JP2017518608A JP2017531210A JP 2017531210 A JP2017531210 A JP 2017531210A JP 2017518608 A JP2017518608 A JP 2017518608A JP 2017518608 A JP2017518608 A JP 2017518608A JP 2017531210 A JP2017531210 A JP 2017531210A
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- Prior art keywords
- siloxane
- dielectric film
- less
- particles
- substrate
- Prior art date
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 title claims abstract description 211
- 239000002245 particle Substances 0.000 title claims abstract description 197
- 229920000642 polymer Polymers 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 87
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910000077 silane Inorganic materials 0.000 claims abstract description 26
- 239000007858 starting material Substances 0.000 claims abstract description 26
- 239000000178 monomer Substances 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 149
- 239000000463 material Substances 0.000 claims description 92
- 239000000203 mixture Substances 0.000 claims description 81
- 239000010408 film Substances 0.000 claims description 74
- 238000000034 method Methods 0.000 claims description 74
- -1 manganese, lanthanide Chemical class 0.000 claims description 49
- 125000003118 aryl group Chemical group 0.000 claims description 39
- 125000000217 alkyl group Chemical group 0.000 claims description 37
- 239000003795 chemical substances by application Substances 0.000 claims description 24
- 239000002904 solvent Substances 0.000 claims description 24
- 238000004132 cross linking Methods 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 16
- 239000002105 nanoparticle Substances 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000004593 Epoxy Substances 0.000 claims description 15
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- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 239000000654 additive Substances 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 11
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 239000012777 electrically insulating material Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000003381 stabilizer Substances 0.000 claims description 10
- 239000002318 adhesion promoter Substances 0.000 claims description 9
- 239000012790 adhesive layer Substances 0.000 claims description 9
- 239000003963 antioxidant agent Substances 0.000 claims description 9
- 239000004973 liquid crystal related substance Substances 0.000 claims description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- 239000011669 selenium Substances 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 229910002656 O–Si–O Inorganic materials 0.000 claims description 4
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 4
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims description 4
- BLJNPOIVYYWHMA-UHFFFAOYSA-N alumane;cobalt Chemical compound [AlH3].[Co] BLJNPOIVYYWHMA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 239000003638 chemical reducing agent Substances 0.000 claims description 4
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 229920001621 AMOLED Polymers 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 230000003078 antioxidant effect Effects 0.000 claims description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 3
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 125000003700 epoxy group Chemical group 0.000 claims description 3
- 229910001337 iron nitride Inorganic materials 0.000 claims description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 3
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 claims description 3
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- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
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- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
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- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 239000004988 Nematic liquid crystal Substances 0.000 claims 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims 1
- 150000001336 alkenes Chemical class 0.000 claims 1
- 150000001345 alkine derivatives Chemical class 0.000 claims 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims 1
- 229920005570 flexible polymer Polymers 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 229920000592 inorganic polymer Polymers 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 125000000962 organic group Chemical group 0.000 claims 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 claims 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims 1
- 229910000314 transition metal oxide Inorganic materials 0.000 claims 1
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- 150000001875 compounds Chemical class 0.000 description 77
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- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 description 15
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- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 8
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- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
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- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- RYINGNAZWSKAII-UHFFFAOYSA-N triethoxy-[3-(1h-imidazol-2-yl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCC1=NC=CN1 RYINGNAZWSKAII-UHFFFAOYSA-N 0.000 description 1
- GAMLUOSQYHLFCT-UHFFFAOYSA-N triethoxy-[3-[(3-ethyloxetan-3-yl)methoxy]propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1(CC)COC1 GAMLUOSQYHLFCT-UHFFFAOYSA-N 0.000 description 1
- VQTPBGMQDVXUBG-UHFFFAOYSA-N triethoxy-[3-[(3-methyloxetan-3-yl)methoxy]propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1(C)COC1 VQTPBGMQDVXUBG-UHFFFAOYSA-N 0.000 description 1
- 150000004684 trihydrates Chemical class 0.000 description 1
- OKMFHWDLPIWPOX-UHFFFAOYSA-N trimethoxy(1-trimethoxysilylpropan-2-yl)silane Chemical compound CO[Si](OC)(OC)CC(C)[Si](OC)(OC)OC OKMFHWDLPIWPOX-UHFFFAOYSA-N 0.000 description 1
- JPMBLOQPQSYOMC-UHFFFAOYSA-N trimethoxy(3-methoxypropyl)silane Chemical compound COCCC[Si](OC)(OC)OC JPMBLOQPQSYOMC-UHFFFAOYSA-N 0.000 description 1
- LQASLKRKZDJCBO-UHFFFAOYSA-N trimethoxy(3-trimethoxysilylpropyl)silane Chemical compound CO[Si](OC)(OC)CCC[Si](OC)(OC)OC LQASLKRKZDJCBO-UHFFFAOYSA-N 0.000 description 1
- OTRIBZPALGOVNZ-UHFFFAOYSA-N trimethoxy(4-trimethoxysilylbutyl)silane Chemical compound CO[Si](OC)(OC)CCCC[Si](OC)(OC)OC OTRIBZPALGOVNZ-UHFFFAOYSA-N 0.000 description 1
- MAFPECYMNWKRHR-UHFFFAOYSA-N trimethoxy(5-trimethoxysilylpentyl)silane Chemical compound CO[Si](OC)(OC)CCCCC[Si](OC)(OC)OC MAFPECYMNWKRHR-UHFFFAOYSA-N 0.000 description 1
- BHZKBFGLZZRETK-UHFFFAOYSA-N trimethoxy(phenanthren-9-yl)silane Chemical compound C1=CC=C2C([Si](OC)(OC)OC)=CC3=CC=CC=C3C2=C1 BHZKBFGLZZRETK-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000003809 water extraction Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
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- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/28—Nitrogen-containing compounds
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
- C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/66—Additives characterised by particle size
- C09D7/67—Particle size smaller than 100 nm
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Abstract
Description
誘電体層は電気絶縁性である。1000Ω/sq以上のシート抵抗を有する。
前記組成物は、5rpm粘度計及び25℃で1000〜75,000mPa・secの粘度を有し、実質的に−OH基を含まない。
R23−aR1aSiR11SiR1bR23−b
ここで
aは1〜3であり、
bは1〜3であり、
R1は上記のような反応基であり、
R2は、アルキル、アルケニル、アルキニル、アルコール、カルボン酸、ジカルボン酸、アリール、ポリアリール、多環式アルキル、ヘテロ環式脂肪族、ヘテロ環式芳香族基であり、
R11は独立してアルキル基又はアリール基であり、
又は1000g/mol未満の分子量を有するそれらのオリゴマー、
上述したように、第1、第2及び第3の化合物又はこれらの任意の組み合わせと一緒に重合させることができる。
R53−(c+d)R4dR3cSiR11SiR3eR4fR53−(e+f)
ここで
R3は架橋官能基であり、
R4は反応性基であり、
アリール基、ポリアリール基、多環式アルキル基、ヘテロ環式脂肪族基、ヘテロ環式芳香族基、複素環式芳香族基、複素環式芳香族基、
R12は独立してアルキル基又はアリール基であり、
c=1〜2、d=1〜(3−c)、e=1〜2、f=1〜(3−e)
又は1000g/mol未満の分子量を有するそれらのオリゴマー、
本明細書に記載の第1、第2、第3の化合物、又はこれらの任意の組み合わせと一緒に重合される。
(a+b)Si−O−SiR22−O−SiRaRbR33−(a+b)
ここで
R1は上記のような反応基であり、
R2は、上で説明したようなアルキル又はアリールであり、
R3は上記のような架橋性官能基であり、
a=0〜3、b=0〜3、
先に言及したシランと重合させるか、又は最終配合物に添加剤として添加する。
R1aR2bSiR34−(a+b)
ここで
R1はヒドロキシル、アルコキシ又はアセチルオキシのような反応性基であり、
R2はアルキル又はアリール基であり、
R3は、エポキシ、オキセタン、アルケニル、アクリレート又はアルキニル基のような架橋化合物であり、
a=0〜1、b=0〜1である。
添加剤は、主ポリマーマトリックスと反応するか又は反応しないので、可塑剤、軟化剤、又はシリコーンのようなマトリックス改質剤として作用する任意の有機又はシリコーンポリマーであってもよい。添加剤は、SiOx、TiOx、AlOx、TaOx、HfOx、ZrOx、SnOx、ポリシラザン等の無機重縮合物であってもよい。
R13hR14iSiR15j
ここで
R13は、ハロゲン、ヒドロキシル、アルコキシ、アセチル又はアセチルオキシのような反応性基であり、
R14はアルキル基又はアリール基であり、
R15は、エポキシ、無水物、シアノ、オキセタン、アミン、チオール、アリル、アルケニル又はアルキニルを含む官能基であり、
h=0〜4、I=0〜4、j=0〜4、h+i+j=4である。
エンドキャップ材料の例:
メタノール中のジフェニルシランジオール(100.0g、0.46mol)、3−(トリメトキシシリル)プロピルメタクリレート(62.6g、0.25mol)、メチルトリメトキシシラン(17.2g、0.13mol)及びBaO(0.1g)を500mLフラスコに入れ、1時間。揮発性物質を減圧下で蒸発させ、透明な樹脂を得た。
3390cm−1のSi−OHバンド)。残りのアルコキシ基は、2840cm−1のSi−OCH3バンドとして観察することができる。
実施例1から得られたポリマー樹脂25gをアセトン50gに溶解した。溶液が濁るまで0.01M HClを添加した。撹拌を室温で8時間続けた。過剰の水を加えてポリマーを沈殿させ、その後、得られたポリマーを分離し、乾燥させた。ポリマーを30gのメチルtert−ブチルエーテル(MTBE)に溶解し、5gのヘキサメチルジシラザン、続いて0.05gのピリジン塩酸塩を添加した。撹拌を室温で24時間続けた。未反応成分を減圧留去し、得られた樹脂をMTBE水抽出法で洗浄した。溶媒を減圧下で蒸発させ、透明な樹脂(22.9g)を得た。
以下の組成物の例は、例示のために与えられたものであり、本発明を限定するものではない。
得られた材料を100mmのシリコンウェハ上に2000rpmでスピンコートした。フィルムを80℃で5分間ホットプレート上で焼き付け、3000mJ/cm2の線量でUV硬化させた。屈折率は、ポリマー樹脂とZrO 2ナノ粒子の重量比を変えることによって調整した。
2 基板
3 薄膜トランジスタアレイ
4 液晶セルのアレイ
5 VCOM層5(電極)
6 カラーフィルタ
7 ガラス基板
8 パターン化導電層
9 絶縁層
10 パターニングされた導電層
11 第2の偏光子
12 接着層
13 カバーガラス
21 偏光層
22 ガラス基板
23 薄膜トランジスタアレイ
24,26 導電層
25 絶縁層
27 個のLCDセル
28 個のカラーフィルタ
29 透明基板
30 偏光層
31 接着層
32 追加透明基板
50 透過性基板
51 透明導電層
52 導電性ジャンパ
53 誘電体層
54 金属トレース
55 導電パターン
56 パッシベーション層
57 追加の誘電体オーバーコート
70 基板
72a 露出領域
72b 未露光領域
75 マスク
80 基板
82 導電層
82a 導電部
82b 溝
85 マスク
86 UV光
Claims (115)
- 誘電体フィルムであって、
シロキサンポリマー及びシロキサンポリマーを含み、平均粒子径が1μm未満である誘電体層と、
誘電体層は、可視光に対して光学的に透過性であり、その上に入射する光の少なくとも75%を透過する、
誘電体層は電気絶縁性である、1000Ω/sq以上のシート抵抗を有する、誘電体フィルム。 - シート抵抗が1×10 5Ω/sq以上である請求項1に記載の誘電体フィルム。
- 前記シート抵抗が1×10 7Ω/sq以上であることを特徴とする請求項1又は2に記載の誘電体フィルム。
- ヘイズが5%未満である、請求項1〜3のいずれか一項に記載の誘電体フィルム。
- 2%未満のヘイズを有する、請求項1〜4のいずれか一項に記載の誘電体フィルム。
- 1.5〜2.0の屈折率を有する、請求項1〜5のいずれか一項に記載の誘電体フィルム。
- 前記粒子がセラミック粒子である、請求項1〜6のいずれか一項に記載の誘電体フィルム。
- 前記セラミック粒子が酸化物粒子である、請求項1〜7のいずれか一項に記載の誘電体フィルム。
- 前記セラミック粒子が窒化物粒子である、請求項1〜8のいずれか一項に記載の誘電体フィルム。
- 粒子が400nm以下の平均粒子径を有するナノ粒子である、請求項1〜9のいずれか一項に記載の誘電体フィルム。
- 前記ナノ粒子の平均粒子径が200nm以下である、請求項1〜10のいずれか一項に記載の誘電体フィルム。
- 前記ナノ粒子が、50nm未満の平均粒子径を有する、請求項1〜11のいずれか一項に記載の誘電体フィルム。
- 前記粒子が25nm以下の平均粒子径を有する、請求項1〜12のいずれか一項に記載の誘電体フィルム。
- 亜鉛、アルミニウム、イットリウム、イッテルビウム、タングステン、チタンシリコン、チタン、アンチモン、サマリウム、ニッケル、ニッケルコバルト、モリブデン、マグネシウム、マンガン、ランタニド、鉄、インジウムスズ、銅、コバルトアルミニウム、クロム、セシウム、又はカルシウムの酸化物を含む、請求項1〜13のいずれか一項に記載の誘電体フィルム。
- 前記粒子が、窒化アルミニウム、窒化タンタル、窒化ホウ素、窒化チタン、窒化銅、窒化モリブデン、窒化タングステン、窒化鉄、窒化ケイ素、窒化インジウム、窒化ガリウム又は窒化炭素である、請求項1〜14のいずれか一項に記載の誘電体フィルム。
- シロキサンポリマー中に実質的に−OH基を有さない、請求項1〜15のいずれか一項に記載の誘電体フィルム。
- 前記シロキサンポリマー中のSiに直接結合した−H基を実質的に有さない、請求項1〜16のいずれか一項に記載の誘電体フィルム。
- 前記フィルムが、電気絶縁部分及び導電部分を含む光パターン形成されたフィルムである、請求項1〜17のいずれか一項に記載の誘電体フィルム。
- 前記粒子が、400nm未満の平均粒子径を有するナノ粒子であり、前記ナノ粒子が、チタン、タンタル、アルミニウム、ジルコニウム、ハフニウム、又はセレンの酸化物である、請求項1〜18のいずれか一項に記載の誘電体フィルム。
- 前記粒子が、シリカ、中空シリカZrO2、ZrO、TiO2、Ta2O5、アンチモンスズ酸化物、又はSnO2である、請求項1〜19のいずれか一項に記載の誘電体フィルム。
- 入射する可視光の少なくとも85%を透過する、請求項1〜20のいずれか一項に記載の誘電体フィルム。
- 入射する可視光の少なくとも90%を透過させる、請求項1〜21のいずれか一項に記載の誘電体フィルム。
- 入射する可視光の少なくとも95%を透過させる、請求項1〜22のいずれか一項に記載の誘電体フィルム。
- 前記基板が、ガラス、石英、サファイア、有機ポリマー、又はハイブリッド有機−無機ポリマーを含む、請求項1〜23のいずれか一項に記載の誘電体フィルム。
- 前記基板が、ポリエチレンテレフタレート又はポリメチルメタクリレートを含む、請求項1〜24のいずれか一項に記載の誘電体フィルム。
- ディスプレイの一部である、請求項1〜25のいずれか一項に記載の誘電体フィルム。
- タッチスクリーンディスプレイの一部である、請求項1〜26のいずれか一項に記載の誘電体フィルム。
- OLEDデバイスの一部である、請求項1〜27のいずれか一項に記載の誘電体フィルム。
- LCDディスプレイの一部である、請求項1〜27のいずれか一項に記載の誘電体フィルム。
- 前記基板が可撓性基板である、請求項1〜29のいずれか一項に記載の誘電体フィルム。
- 前記シロキサンポリマーが有機アリール基を含む、請求項1〜30のいずれか一項に記載の誘電体フィルム。
- 前記アリール基がフェニル基である、請求項1〜31のいずれか一項に記載の誘電体フィルム。
- 屈折率が1.6〜1.9であることを特徴とする請求項1〜32のいずれか一項に記載の誘電体フィルム。
- 前記フィルムが熱的に安定であり、少なくとも200℃に加熱された場合、質量損失が4%未満である、請求項1〜33のいずれか一項に記載の誘電体フィルム。
- 前記フィルムが熱的に安定であり、少なくとも200℃に加熱された場合、質量損失が2%未満である、請求項1〜34のいずれか一項に記載の誘電体フィルム。
- 前記フィルムが熱的に安定であり、少なくとも200℃に加熱された場合、質量損失が1%未満である、請求項1〜35のいずれか一項に記載の誘電体フィルム。
- 接着剤である、請求項1〜36のいずれか一項に記載の誘電体フィルム。
- タッチスクリーンディスプレイにおける接着剤である、請求項1〜37のいずれか一項に記載の誘電体フィルム。
- 誘電体フィルムの製造方法であって、
基板を提供するステップと、
基材上にシロキサン出発材料及び粒子を有する組成物を付着させるステップと
を含み、
シロキサン出発材料が、シロキサンポリマー、シロキサンオリゴマー、及び/又はシランモノマーを含み、
該粒子の平均粒子径が400nm未満であり、
前記シロキサン粒子層に熱及び/又は電磁エネルギーを印加して前記層を硬化させ、前記基板上に誘電体フィルムを形成し、
前記フィルムは、可視光に対して光学的に透過性であり、入射する可視光の少なくとも80%を透過し、
前記フィルムは電気絶縁性であり、1000Ω/sq以上のシート抵抗を有する、方法。 - 前記シロキサン出発材料が、溶媒の不存在下で前記基板上に前記粒子と共に堆積される、請求項39に記載の方法。
- 前記粒子が200nm未満の平均粒子径を有する酸化物ナノ粒子であり、前記フィルムが1.6〜1.9の屈折率を有する、請求項39又は40に記載の方法。
- シロキサン出発材料が、シリコンに直接結合した水素を実質的に含まない、請求項39〜41のいずれか一項に記載の方法。
- シロキサン出発物質が実質的に−OH基を含まない、請求項39〜42のいずれか一項に記載の方法。
- シロキサン出発材料が、シロキサン主鎖中のSiに結合したアリール基及び/又はアルキル基から選択される有機基を含む、請求項39〜43のいずれか一項に記載の方法。
- 硬化前及び硬化後のシロキサン組成物の質量損失が4%未満である、請求項39〜44のいずれか一項に記載の方法。
- 硬化前及び硬化後のシロキサン組成物の質量損失が2%未満である、請求項39〜45のいずれか一項に記載の方法。
- 硬化前及び硬化後のシロキサン組成物の質量損失が1%未満である、請求項39〜45のいずれか一項に記載の方法。
- シロキサン出発材料が光架橋性ポリマーである、請求項39〜47のいずれか一項に記載の方法。
- 前記シロキサン出発材料が、シロキサンポリマー、シランモノマー、及び添加剤を含む、請求項39〜48のいずれか一項に記載の方法。
- 前記添加剤が、還元剤、安定剤、界面活性剤、安定剤、接着促進剤、及び/又は酸化防止剤である、請求項39〜49のいずれか一項に記載の方法。
- 前記添加剤が、熱硬化剤又は光開始剤である、請求項39〜50のいずれか一項に記載の方法。
- 基板上のシロキサン出発材料が、マスク又はパターン形成されたフォトレジスト層を介してUV光に暴露されて、UV光に暴露された硬化領域を形成するようにされている、パターン化された誘電体フィルムを形成するために非露光領域を選択的に除去することを含む、請求項39〜51のいずれか一項に記載の方法。
- 亜鉛、アルミニウム、イットリウム、イッテルビウム、タングステン、チタンシリコン、チタン、アンチモン、サマリウム、ニッケル、ニッケルコバルト、モリブデン、マグネシウム、マンガン、ランタニド、鉄、インジウムスズ、銅、コバルトアルミニウム、クロム、セシウム、又はカルシウムの酸化物を含む、請求項39〜52のいずれか一項に記載の方法。
- 前記粒子が、チタン、タンタル、アルミニウム、ジルコニウム、ハフニウム又はセレンの酸化物を含み、屈折率が1.6〜1.9である、請求項39〜53のいずれか一項に記載の方法。
- 前記粒子が50nm未満の平均粒子径を有する、請求項39〜54のいずれか一項に記載の方法。
- 前記粒子が25nm未満の平均粒子径を有する、請求項39〜55のいずれか一項に記載の方法。
- 前記シロキサン出発物質がフェニル及びメタクリレート官能基を含み、前記粒子がセラミック酸化物ナノ粒子であり、400nm未満の平均粒子径を有する、請求項39〜56のいずれか一項に記載の方法。
- 組成物が光開始剤を含む、請求項39〜57のいずれか一項に記載の方法。
- 前記組成物が、熱により誘導される硬化剤を含む、請求項39〜58のいずれか一項に記載の方法。
- 前記シロキサン出発材料がソフトベークされ、続いてUV光に選択的に曝され、続いて選択された領域が現像液で除去される、請求項39〜59のいずれか一項に記載の方法。
- フィルムが1000Ω/sq以上のシート抵抗を有する、請求項39〜60のいずれか一項に記載の方法。
- 前記電極が10000Ω/sq以上のシート抵抗を有する、請求項39〜61のいずれか一項に記載の方法。
- 前記電極は、その上に入射する可視光の少なくとも85%を透過させる、請求項39〜62のいずれか一項に記載の方法。
- 前記電極が、そこに入射する前記可視光の少なくとも95%を透過させる、請求項39〜63のいずれか一項に記載の方法。
- シロキサン出発材料が120℃未満の温度で熱硬化される、請求項39〜64のいずれか一項に記載の方法。
- シロキサン出発材料が110℃未満の温度で熱硬化される、請求項39〜65のいずれか一項に記載の方法。
- シロキサン出発材料が125℃未満の温度で熱硬化され、紫外線で硬化される、請求項39〜66のいずれか一項に記載の方法。
- 硬化後、200℃の温度で30分間加熱すると、4%未満の質量損失が生じる、請求項39〜67のいずれか一項に記載の方法。
- 硬化後、200℃の温度で30分間加熱すると、2%未満の質量損失が生じる、請求項39〜68のいずれか一項に記載の方法。
- 硬化後、200℃の温度で30分間加熱すると、1%未満の質量損失が生じる、請求項39〜69のいずれか一項に記載の方法。
- シロキサン出発材料が、独立してアルケン、アルキン、エポキシ、オキセタン又はアクリレート基である官能性架橋基を含む、請求項39〜70のいずれか一項に記載の方法。
- シロキサン出発材料が、シロキサンポリマー又はオリゴマー内又はシランモノマー内にフェニル基及びエポキシ基を有する、請求項39〜71のいずれか一項に記載の方法。
- シロキサン出発材料が、シロキサンポリマー又はオリゴマー内又はシランモノマー内にフェニル及びメタクリレート基を有する、請求項39〜72のいずれか一項に記載の方法。
- シロキサン出発材料が、シラノール及びアルコキシシランから選択されるモノマーを含む、請求項39〜73のいずれか一項に記載の方法。
- 前記シロキサン出発材料が、100℃未満の温度で、紫外線の照射なしに熱硬化される、請求項39〜74のいずれか一項に記載の方法。
- ディスプレイであって、
マトリクス内の複数の画素であって、
液晶層及び/又は発光ダイオード層と、
可視光に対して光学的に透過性である複数の基板と、
第1の基板を第2の基板に接合するための接着剤であって、1000Ω/sqより大きいシート抵抗を有し、シロキサン材料と平均粒子径が400nm未満の粒子とを含む導電性材料を形成するための接着剤とを備え、
電気絶縁材料は熱的に安定であり、少なくとも200℃に加熱すると質量損失が2%未満となる、ディスプレイ。 - 前記電気絶縁材料は、その上に入射する可視光の少なくとも85%を透過する光学的に透過性の層である、請求項76に記載のディスプレイ。
- 前記電気絶縁材料が、その上に入射する可視光の少なくとも90%を透過する、請求項76又は77に記載のディスプレイ。
- 前記電気絶縁材料が1000Ω/sq以上のシート抵抗を有する、請求項76〜78のいずれか一項に記載のディスプレイ。
- 前記導電性材料が、シート抵抗が10000Ω/sq以上である、請求項76〜79のいずれか一項に記載のディスプレイ。
- 前記粒子が、窒化アルミニウム、窒化タンタル、窒化ホウ素、窒化チタン、窒化銅、窒化モリブデン、窒化タングステン、窒化鉄、窒化ケイ素、窒化インジウム、窒化ケイ素、窒化ガリウム、又は窒化炭素から選択される窒化物粒子である、請求項76〜80のいずれか一項に記載のディスプレイ。
- 前記粒子が、ケイ素、亜鉛、アルミニウム、イットリウム、イッテルビウム、タングステン、チタンシリコン、チタン、アンチモン、サマリウム、ニッケル、ニッケルコバルト、モリブデン、モリブデン、マグネシウム、マンガン、ランタニド、鉄、インジウムスズ、銅、コバルトアルミニウム、クロム、セシウム、又はカルシウムの酸化物を含む酸化物ナノ粒子である、請求項76〜81のいずれか一項に記載のディスプレイ。
- 前記粒子が、チタン、タンタル、アルミニウム、ジルコニウム、ハフニウム又はセレンの酸化物を含み、屈折率が1.6〜1.9である、請求項76〜82のいずれか一項に記載のディスプレイ。
- 前記シロキサン材料が、アリール又はアルキル基を含み、前記粒子が遷移金属酸化物を含み、100nm未満の平均粒子径を有するシロキサンポリマーである、請求項76〜83のいずれか一項に記載のディスプレイ。
- 前記平均粒子径が50nm未満である、請求項76〜84のいずれか一項に記載のディスプレイ。
- 平均粒子径が25nm未満である、請求項76〜85のいずれか一項に記載のディスプレイ。
- 前記複数の基板は、その上に液晶素子を有する第1の基板と、カバー基板である第2の基板とを含む、請求項76〜86のいずれか一項に記載のディスプレイ。
- 前記複数の基板は、その上に液晶素子を有する第1の基板と、その上に容量性タッチセンサを含む第2の基板と、カバー基板である第3の基板とを含む、請求項76〜87のいずれか一項に記載のディスプレイ。
- 前記LCD画素がねじれネマティック液晶である、請求項76〜88のいずれか一項に記載のディスプレイ。
- 前記第1及び第2の基板を一緒に結合するために第1の接着層が設けられ、前記第2及び第3の基板を互いに結合するために第2の接着層が設けられ、前記第1及び第2の基板の両方が、接着剤層は前記シロキサン粒子出発材料からなる、請求項76〜89のいずれか一項に記載のディスプレイ。
- 前記ピクセルは、発光ダイオード(LED)ピクセルである、請求項76〜90のいずれか一項に記載のディスプレイ。
- 前記ピクセルがOLEDピクセルである、請求項76〜91のいずれか一項に記載のディスプレイ。
- 前記ピクセルがAMOLEDピクセルである、請求項76〜92のいずれか一項に記載のディスプレイ。
- 前記第1の基板が可撓性ポリマー基板であり、前記ディスプレイがOLEDディスプレイである、請求項76〜93のいずれか一項に記載のディスプレイ。
- タッチパネルディスプレイである、請求項76〜94のいずれか一項に記載のディスプレイ。
- ディスプレイを製造する方法であって、
その上にピクセル要素のアレイを有する第1の基板を提供するステップであって、前記ピクセル要素のそれぞれは、液晶材料及び/又は発光ダイオード材料を含むステップと、
カバー基板である第2の基板を提供するステップと、
第1及び第2の基材を接着剤と一緒に接着するステップと
を含み、
前記接着剤は、1000Ω/sq以上の電気抵抗率を有し、シロキサン材料と、400nm未満の平均粒子径を有する粒子とを含む電気絶縁材料からなり、
熱及び/又はUV光を印加することにより前記第1基板と前記第2基板との間に前記シロキサン材料を硬化させて硬化させる、方法。 - 硬化後の質量損失が2%未満である、請求項96に記載の方法。
- 硬化後の質量損失が1%未満である、請求項96又は97に記載の方法。
- 硬化が、紫外線の適用下である、請求項96〜98のいずれか一項に記載の方法
- 前記硬化が、120℃〜150℃の熱の下で行われる、請求項96〜99のいずれか一項に記載の方法。
- 前記硬化は、前記シロキサン粒子材料をソフトベーキングし、前記シロキサン粒子材料をUVパターニングし、前記シロキサン粒子材料の一部を選択的に除去して電気絶縁パターンを残すことを含む、請求項96〜100のいずれか一項に記載の方法。
- 硬化が、マスク又はレジスト層を介してUV光を照射することによってシロキサン粒子材料をUVパターン化することを含む、請求項96〜101のいずれか一項に記載の方法。
- ロールツーロールプロセスであり、前記第1の基板は、ロールから提供される可撓性基板である、請求項96〜102のいずれか一項に記載の方法。
- 第2のロールから提供され、前記第1の基板に接合するための可撓性基板である第2の基板をさらに含む、請求項96〜103のいずれか一項に記載の方法。
- 前記第1及び第2の基材が透明ポリマー材料である、請求項96〜104のいずれか一項に記載の方法。
- シロキサン出発物質が実質的に−OH基を含まない、請求項96〜105のいずれか一項に記載の方法。
- シロキサン出発材料がSi−H結合を実質的に含まない、請求項96〜106のいずれか一項に記載の方法。
- 硬化後、硬化したシロキサン材料を200℃に加熱すると、2%未満の質量損失が生じる、請求項96〜107のいずれか一項に記載の方法。
- シロキサン材料が有機アリール又はアルキル基を含む、請求項96〜108のいずれか一項に記載の方法。
- シロキサン材料がアリール基を含むがアルキル基を含まない、請求項96〜109のいずれか一項に記載の方法。
- アリール基が、シロキサン材料中のケイ素に直接結合したフェニル基である、請求項96〜110のいずれか一項に記載の方法。
- 組成物であって、
a)アルキル又はアリール基をその上に有する、[−Si−O−Si−O]n反復骨格を有するシロキサンポリマー、及びb)その上の官能性架橋基と、
平均粒子径が400nm未満の酸化物又は窒化物ナノ粒子である粒子と
を備え、
前記シロキサンポリマーが300〜10,000g/molの分子量を有し、
前記組成物は、5rpm粘度計及び25℃で1000〜75,000mPa・secの粘度を有し、
シロキサンポリマーはその中に−OH基を実質的に含まない、組成物。 - シロキサンポリマーがSi−H結合を実質的に含まない、請求項112に記載の組成物。
- 前記粒子が25nm以下の平均粒子径を有する、請求項112又は113に記載の組成物。
- タッチパネルであって、
透明基板と、
第1の導電層と、
シロキサンポリマーと平均粒子径が400nm以下の粒子とを含む誘電体層と、
第2の導電層と
を備え、
シロキサンポリマーはアリール基を含み、実質的に−OH基を含まず、
シロキサンポリマーが200℃に加熱されると、質量損失は1%未満であり、
前記誘電体層の電気抵抗率が1000Ω/sq以上であり、
誘電体層の光学的透過率は可視光に対して少なくとも85%である、タッチパネル。
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