JP2017523545A - クロスポイント型アレイの双方向アクセスのための装置および方法 - Google Patents
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- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
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Abstract
Description
Claims (25)
- メモリセルを含むメモリアレイと、
アクセス動作を引き起こすよう構成されたメモリコントローラであって、前記アクセス動作が、前記アクセス動作の選択段階の間、前記メモリセル両端に第1のバイアスを印加することと、前記アクセス動作のアクセス段階の間、前記メモリセル両端に、前記第1のバイアスよりも大きさが小さい第2のバイアスを印加することとを含むことを特徴とする、メモリコントローラとを備え、
前記メモリコントローラが、前記メモリセルを通って流れる電流の向きを、前記選択段階と前記アクセス段階との間で反転させるようにさらに構成されていることを特徴とする装置。 - 前記メモリセルが、前記第1のバイアスの印加に応じて閾値に至るように構成されていることを特徴とする、請求項1の装置。
- 前記メモリコントローラが、前記第1のバイアスを取り除くとともに、前記第2のバイアスの印加に先立って、前記メモリセルを通って流れる電流を最小ホールド電流未満に降下させて前記メモリセルを閾値到達後状態から解放するようにさらに構成されていることを特徴とする、請求項2の装置。
- 前記メモリコントローラが、前記メモリセルを解放してから約5マイクロ秒未満のうちに、前記第2のバイアスを印加するように構成されていることを特徴とする、請求項3の装置。
- 前記メモリコントローラが、前記第2のバイアスの印加に先立って、前記メモリセルを通してスナップバック放電電流を流すようにさらに構成されていることを特徴とする、請求項1の装置。
- 前記第1のバイアスが第1の極性を有し、前記第2のバイアスが前記第1の極性とは逆の第2の極性を有することを特徴とする、請求項1の装置。
- 前記メモリセルが、前記第2のバイアスの印加にも応じて閾値に至るようにさらに構成されていることを特徴とする、請求項6の装置。
- 前記メモリアレイがクロスポイント型メモリアレイを含み、前記メモリセルが、電気的に直列に配置された選択素子と記憶素子とを含むことを特徴とする、請求項1の装置。
- 前記選択素子または前記記憶素子の少なくとも一方が、カルコゲナイド材料を含むことを特徴とする、請求項8の装置。
- 前回の閾値に至る事象から前記メモリセルが解放されてからの時間経過に依存する大きさを有する閾値電圧を、前記メモリセルが有することを特徴とする、請求項9の装置。
- メモリセルを含むメモリアレイと、
アクセス動作を引き起こすよう構成されたメモリコントローラであって、前記アクセス動作が、前記アクセス動作の選択段階の間、前記メモリセル両端に第1のバイアスを印加することと、前記第1のバイアスを取り除くことと、前記アクセス動作のアクセス段階の間、前記メモリセル両端に第2のバイアスを印加することとを含み、前記第1と第2のバイアスが逆の極性を有することを特徴とする、メモリコントローラと、
を備える装置。 - 前記メモリセルが、前記第1のバイアスの印加に応じて閾値に至るように構成されており、前記第2のバイアスは、前記第1のバイアスよりも大きさが小さいことを特徴とする、請求項11の装置。
- 前記選択段階の少なくとも一部の間は前記メモリセルを第1の電圧に接続するとともに、前記アクセス段階の少なくとも一部の間は前記メモリセルを第2の電圧に接続するように構成された選択解除回路を、前記装置がさらに備えることを特徴とする、請求項11の装置。
- 前記アクセス段階の間に、前記メモリセルの前記第1の電圧への接続から、前記メモリセルの前記第2の電圧への接続へと、前記選択解除回路に切り換えさせるように、前記コントローラが構成されていることを特徴とする、請求項13の装置。
- 前記選択段階の間に、前記メモリセルの前記第1の電圧への接続から、前記メモリセルの前記第2の電圧への接続へと、前記選択解除回路に切り換えさせるように、前記コントローラが構成されていることを特徴とする、請求項13の装置。
- 前記アクセス段階の間に、スナップバック事象の検出に応じて、前記メモリセルの前記第1の電圧への接続から、前記メモリセルの前記第2の電圧への接続へと、前記選択解除回路に切り換えさせるように、前記コントローラが構成されていることを特徴とする、請求項13の装置。
- 前記コントローラが、前記第1のバイアスの印加と前記第2のバイアスの印加の間には、前記メモリセルを通って流れる電流を最小ホールド電流未満に降下させるようにさらに構成されていることを特徴とする、請求項13の装置。
- 前記選択解除回路が列選択解除回路を含むことを特徴とする、請求項13の装置。
- 前記選択解除回路が行選択解除回路を含むことを特徴とする、請求項13の装置。
- アクセス命令を前記メモリコントローラに送るよう構成されたプロセッサをさらに備え、前記メモリコントローラが、前記アクセス命令を受け取るのに応じて前記アクセス動作を引き起こすように構成されていることを特徴とする、請求項13の装置。
- メモリセルにアクセスする方法であって、
アクセス動作の選択段階の間、前記メモリセル両端に第1のバイアスを印加し、アクセス動作のアクセス段階の間、前記メモリセル両端に、前記第1のバイアスより大きさが小さい第2のバイアスを印加することと、
前記選択段階と前記アクセス段階との間で電流の流れの方向を反転させること
を含む方法。 - 前記第1のバイアスの印加に応じて前記メモリセルが閾値に至ることを特徴とする、請求項21の方法。
- 前記第1のバイアスを取り除くとともに、前記メモリセルを通って流れる電流を最小ホールド電流未満に降下させることによって、前記第2のバイアスを印加するよりも前に、前記メモリセルを閾値到達後状態から解放することをさらに含む、請求項21の方法。
- 前記閾値到達後状態から前記メモリセルを解放してから約5マイクロ秒未満のうちに、前記第2のバイアスを印加することをさらに含む、請求項23の方法。
- 前記第1のバイアスを印加することによって、前記メモリセルを通ってスナップバック放電電流が流れることを特徴とする、請求項21の方法。
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US14/272,015 | 2014-05-07 | ||
US14/272,015 US9324423B2 (en) | 2014-05-07 | 2014-05-07 | Apparatuses and methods for bi-directional access of cross-point arrays |
PCT/US2015/029106 WO2015171520A1 (en) | 2014-05-07 | 2015-05-04 | Apparatuses and methods for bi-directional access of cross-point arrays |
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KR (3) | KR101935118B1 (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021504869A (ja) * | 2017-11-30 | 2021-02-15 | マイクロン テクノロジー,インク. | メモリセルの動作 |
JP2021534532A (ja) * | 2018-08-22 | 2021-12-09 | マイクロン テクノロジー,インク. | メモリセルをプログラムするための技術 |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8953387B2 (en) | 2013-06-10 | 2015-02-10 | Micron Technology, Inc. | Apparatuses and methods for efficient write in a cross-point array |
US9312005B2 (en) | 2013-09-10 | 2016-04-12 | Micron Technology, Inc. | Accessing memory cells in parallel in a cross-point array |
US9324423B2 (en) | 2014-05-07 | 2016-04-26 | Micron Technology, Inc. | Apparatuses and methods for bi-directional access of cross-point arrays |
KR20150132952A (ko) * | 2014-05-19 | 2015-11-27 | 에스케이하이닉스 주식회사 | 전자 장치 |
US10049730B2 (en) * | 2014-07-31 | 2018-08-14 | Hewlett Packard Enterprise Development Lp | Crossbar arrays with shared drivers |
US9990990B2 (en) * | 2014-11-06 | 2018-06-05 | Micron Technology, Inc. | Apparatuses and methods for accessing variable resistance memory device |
KR20170097813A (ko) * | 2016-02-18 | 2017-08-29 | 에스케이하이닉스 주식회사 | 상황에 따라 정확한 리드 전압을 제공하는 저항 변화 메모리 장치 |
US10192616B2 (en) * | 2016-06-28 | 2019-01-29 | Western Digital Technologies, Inc. | Ovonic threshold switch (OTS) driver/selector uses unselect bias to pre-charge memory chip circuit and reduces unacceptable false selects |
KR20180058060A (ko) | 2016-11-23 | 2018-05-31 | 에스케이하이닉스 주식회사 | 피크 커런트 분산이 가능한 상변화 메모리 장치 |
US10424374B2 (en) * | 2017-04-28 | 2019-09-24 | Micron Technology, Inc. | Programming enhancement in self-selecting memory |
US10297316B2 (en) * | 2017-08-28 | 2019-05-21 | Macronix International Co., Ltd. | Phase change memory apparatus and read control method to reduce read disturb and sneak current phenomena |
KR20190042892A (ko) * | 2017-10-17 | 2019-04-25 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 이의 동작 방법 |
US10366747B2 (en) * | 2017-11-30 | 2019-07-30 | Micron Technology, Inc. | Comparing input data to stored data |
US10381075B2 (en) | 2017-12-14 | 2019-08-13 | Micron Technology, Inc. | Techniques to access a self-selecting memory device |
US10854813B2 (en) | 2018-02-09 | 2020-12-01 | Micron Technology, Inc. | Dopant-modulated etching for memory devices |
US10825867B2 (en) * | 2018-04-24 | 2020-11-03 | Micron Technology, Inc. | Cross-point memory array and related fabrication techniques |
US10777275B2 (en) | 2018-09-26 | 2020-09-15 | Intel Corporation | Reset refresh techniques for self-selecting memory |
JP2020087493A (ja) * | 2018-11-26 | 2020-06-04 | キオクシア株式会社 | 半導体記憶装置 |
KR20200115949A (ko) | 2019-03-29 | 2020-10-08 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그 제조 방법 |
US20200378513A1 (en) * | 2019-05-31 | 2020-12-03 | Robert Kowalski | Heated Faucet Cover |
US11164619B2 (en) * | 2019-08-19 | 2021-11-02 | Micron Technology, Inc. | Distribution-following access operations for a memory device |
US11282815B2 (en) | 2020-01-14 | 2022-03-22 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
US11170853B2 (en) * | 2020-03-04 | 2021-11-09 | Micron Technology, Inc. | Modified write voltage for memory devices |
US11049559B1 (en) * | 2020-06-11 | 2021-06-29 | Sandisk Technologies Llc | Subthreshold voltage forming of selectors in a crosspoint memory array |
US11705367B2 (en) | 2020-06-18 | 2023-07-18 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, electronic systems, and additional methods |
US11563018B2 (en) | 2020-06-18 | 2023-01-24 | Micron Technology, Inc. | Microelectronic devices, and related methods, memory devices, and electronic systems |
US11557569B2 (en) | 2020-06-18 | 2023-01-17 | Micron Technology, Inc. | Microelectronic devices including source structures overlying stack structures, and related electronic systems |
US11380669B2 (en) | 2020-06-18 | 2022-07-05 | Micron Technology, Inc. | Methods of forming microelectronic devices |
US11335602B2 (en) | 2020-06-18 | 2022-05-17 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
US11699652B2 (en) | 2020-06-18 | 2023-07-11 | Micron Technology, Inc. | Microelectronic devices and electronic systems |
US11825658B2 (en) | 2020-08-24 | 2023-11-21 | Micron Technology, Inc. | Methods of forming microelectronic devices and memory devices |
US11417676B2 (en) | 2020-08-24 | 2022-08-16 | Micron Technology, Inc. | Methods of forming microelectronic devices and memory devices, and related microelectronic devices, memory devices, and electronic systems |
US11751408B2 (en) | 2021-02-02 | 2023-09-05 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems |
KR20220153358A (ko) | 2021-05-11 | 2022-11-18 | 에스케이하이닉스 주식회사 | 저항 변화 메모리 장치, 이를 포함하는 메모리 시스템 및 저항 변화 메모리 장치의 구동 방법 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090207645A1 (en) * | 2008-02-20 | 2009-08-20 | Ovonyx, Inc. | Method and apparatus for accessing a bidirectional memory |
US20110149628A1 (en) * | 2009-12-21 | 2011-06-23 | Langtry Timothy C | Programming Phase Change Memories Using Ovonic Threshold Switches |
US20120063245A1 (en) * | 2010-09-14 | 2012-03-15 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor storage device |
WO2012127718A1 (en) * | 2011-03-23 | 2012-09-27 | Kabushiki Kaisha Toshiba | Resistance-change memory |
US20130294153A1 (en) * | 2012-05-07 | 2013-11-07 | Micron Technology, Inc. | Apparatuses and methods including supply current in memory |
US20140362650A1 (en) * | 2013-06-10 | 2014-12-11 | Micron Technology, Inc. | Apparatuses and methods for efficient write in a cross-point array |
US20150074326A1 (en) * | 2013-09-10 | 2015-03-12 | Micron Technology, Inc. | Accessing memory cells in parallel in a cross-point array |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6385075B1 (en) | 2001-06-05 | 2002-05-07 | Hewlett-Packard Company | Parallel access of cross-point diode memory arrays |
US6768685B1 (en) | 2001-11-16 | 2004-07-27 | Mtrix Semiconductor, Inc. | Integrated circuit memory array with fast test mode utilizing multiple word line selection and method therefor |
US6882567B1 (en) | 2002-12-06 | 2005-04-19 | Multi Level Memory Technology | Parallel programming of multiple-bit-per-cell memory cells on a continuous word line |
US6954373B2 (en) * | 2003-06-27 | 2005-10-11 | Hewlett-Packard Development Company, L.P. | Apparatus and method for determining the logic state of a magnetic tunnel junction memory device |
US7085190B2 (en) | 2004-09-16 | 2006-08-01 | Stmicroelectronics, Inc. | Variable boost voltage row driver circuit and method, and memory device and system including same |
DE602004026447D1 (de) | 2004-09-22 | 2010-05-20 | St Microelectronics Srl | Speicheranordnung mit unipolaren and bipolaren Auswahlschaltungen |
JP2006127583A (ja) | 2004-10-26 | 2006-05-18 | Elpida Memory Inc | 不揮発性半導体記憶装置及び相変化メモリ |
US7307268B2 (en) | 2005-01-19 | 2007-12-11 | Sandisk Corporation | Structure and method for biasing phase change memory array for reliable writing |
KR100735748B1 (ko) | 2005-11-09 | 2007-07-06 | 삼성전자주식회사 | 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들 |
US7859896B2 (en) * | 2006-02-02 | 2010-12-28 | Renesas Electronics Corporation | Semiconductor device |
US7414883B2 (en) | 2006-04-20 | 2008-08-19 | Intel Corporation | Programming a normally single phase chalcogenide material for use as a memory or FPLA |
KR100843144B1 (ko) * | 2006-12-20 | 2008-07-02 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법 |
US7382647B1 (en) | 2007-02-27 | 2008-06-03 | International Business Machines Corporation | Rectifying element for a crosspoint based memory array architecture |
KR100944343B1 (ko) | 2007-08-10 | 2010-03-02 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치 |
JP5100292B2 (ja) * | 2007-10-05 | 2012-12-19 | 株式会社東芝 | 抵抗変化メモリ装置 |
US7961506B2 (en) * | 2008-02-05 | 2011-06-14 | Micron Technology, Inc. | Multiple memory cells with rectifying device |
US7903454B2 (en) * | 2008-05-02 | 2011-03-08 | Qimonda Ag | Integrated circuit, memory cell array, memory module, and method of operating an integrated circuit |
US8134865B2 (en) * | 2008-05-06 | 2012-03-13 | Macronix International Co., Ltd. | Operating method of electrical pulse voltage for RRAM application |
US8111539B2 (en) | 2008-06-27 | 2012-02-07 | Sandisk 3D Llc | Smart detection circuit for writing to non-volatile storage |
US8351264B2 (en) | 2008-12-19 | 2013-01-08 | Unity Semiconductor Corporation | High voltage switching circuitry for a cross-point array |
US7957207B2 (en) | 2009-03-10 | 2011-06-07 | Ovonyx, Inc. | Programmable resistance memory with interface circuitry for providing read information to external circuitry for processing |
US20100284211A1 (en) * | 2009-05-05 | 2010-11-11 | Michael Hennessey | Multilevel Nonvolatile Memory via Dual Polarity Programming |
US20100284213A1 (en) * | 2009-05-06 | 2010-11-11 | Savransky Semyon D | Method of cross-point memory programming and related devices |
US8208285B2 (en) | 2009-07-13 | 2012-06-26 | Seagate Technology Llc | Vertical non-volatile switch with punchthrough access and method of fabrication therefor |
JP5214560B2 (ja) | 2009-08-19 | 2013-06-19 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US8716780B2 (en) | 2009-11-06 | 2014-05-06 | Rambus Inc. | Three-dimensional memory array stacking structure |
US8467253B2 (en) | 2010-05-24 | 2013-06-18 | Hewlett-Packard Development Company, L.P. | Reading memory elements within a crossbar array |
US20120002461A1 (en) | 2010-07-02 | 2012-01-05 | Karpov Elijah I | Non-volatile memory with ovonic threshold switch and resistive memory element |
US9042153B2 (en) * | 2010-08-20 | 2015-05-26 | Shine C. Chung | Programmable resistive memory unit with multiple cells to improve yield and reliability |
US8699258B2 (en) * | 2011-01-21 | 2014-04-15 | Macronix International Co., Ltd. | Verification algorithm for metal-oxide resistive memory |
US8605495B2 (en) | 2011-05-09 | 2013-12-10 | Macronix International Co., Ltd. | Isolation device free memory |
US8665630B2 (en) * | 2011-05-27 | 2014-03-04 | Micron Technology, Inc. | Memory cell operation including capacitance |
US8953363B2 (en) | 2011-07-21 | 2015-02-10 | Panasonic Intellectural Property Management Co., Ltd. | Nonvolatile semiconductor memory device and read method for the same |
US8681540B2 (en) | 2011-08-29 | 2014-03-25 | Intel Corporation | Tile-level snapback detection through coupling capacitor in a cross point array |
WO2013036244A1 (en) | 2011-09-09 | 2013-03-14 | Intel Corporation | Path isolation in a memory device |
US8673733B2 (en) | 2011-09-27 | 2014-03-18 | Soitec | Methods of transferring layers of material in 3D integration processes and related structures and devices |
US9117515B2 (en) | 2012-01-18 | 2015-08-25 | Macronix International Co., Ltd. | Programmable metallization cell with two dielectric layers |
JP5602175B2 (ja) * | 2012-03-26 | 2014-10-08 | 株式会社東芝 | 不揮発性半導体記憶装置及びそのデータ書き込み方法 |
WO2013154564A1 (en) * | 2012-04-12 | 2013-10-17 | Intel Corporation | Selector for low voltage embedded memory |
US9245926B2 (en) | 2012-05-07 | 2016-01-26 | Micron Technology, Inc. | Apparatuses and methods including memory access in cross point memory |
US9123410B2 (en) | 2013-08-27 | 2015-09-01 | Intel Corporation | Memory controller for reducing capacitive coupling in a cross-point memory |
US9324423B2 (en) * | 2014-05-07 | 2016-04-26 | Micron Technology, Inc. | Apparatuses and methods for bi-directional access of cross-point arrays |
-
2014
- 2014-05-07 US US14/272,015 patent/US9324423B2/en active Active
-
2015
- 2015-05-04 WO PCT/US2015/029106 patent/WO2015171520A1/en active Application Filing
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-
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- 2017-07-31 US US15/664,666 patent/US10482956B2/en active Active
-
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- 2018-11-29 JP JP2018223363A patent/JP6637148B2/ja active Active
-
2019
- 2019-10-18 US US16/657,876 patent/US10847220B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090207645A1 (en) * | 2008-02-20 | 2009-08-20 | Ovonyx, Inc. | Method and apparatus for accessing a bidirectional memory |
US20110149628A1 (en) * | 2009-12-21 | 2011-06-23 | Langtry Timothy C | Programming Phase Change Memories Using Ovonic Threshold Switches |
US20120063245A1 (en) * | 2010-09-14 | 2012-03-15 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor storage device |
JP2012064254A (ja) * | 2010-09-14 | 2012-03-29 | Toshiba Corp | 不揮発性半導体記憶装置 |
WO2012127718A1 (en) * | 2011-03-23 | 2012-09-27 | Kabushiki Kaisha Toshiba | Resistance-change memory |
JP2012203926A (ja) * | 2011-03-23 | 2012-10-22 | Toshiba Corp | 抵抗変化メモリ |
US20130294153A1 (en) * | 2012-05-07 | 2013-11-07 | Micron Technology, Inc. | Apparatuses and methods including supply current in memory |
US20140362650A1 (en) * | 2013-06-10 | 2014-12-11 | Micron Technology, Inc. | Apparatuses and methods for efficient write in a cross-point array |
US20150074326A1 (en) * | 2013-09-10 | 2015-03-12 | Micron Technology, Inc. | Accessing memory cells in parallel in a cross-point array |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021504869A (ja) * | 2017-11-30 | 2021-02-15 | マイクロン テクノロジー,インク. | メモリセルの動作 |
JP2021534532A (ja) * | 2018-08-22 | 2021-12-09 | マイクロン テクノロジー,インク. | メモリセルをプログラムするための技術 |
JP7271075B2 (ja) | 2018-08-22 | 2023-05-11 | マイクロン テクノロジー,インク. | メモリセルをプログラムするための技術 |
US11817148B2 (en) | 2018-08-22 | 2023-11-14 | Micron Technology, Inc. | Techniques for programming a memory cell |
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